flanges
Abstract: hwson 6pin
Text: 6PIN HWSON 4521 φ1 A B C φ2 TYPE CLASS label W UNIT: mm ITEM SYMBOL SIZE Diameter A φ 180 + −3 Space Between Flanges W 13 ± 0.5 Outer Diameter B φ 60±1 Flange Hub Marking Slit Location θ1 90º Spindle Diameter C φ 13±0.5 Key Slit Location θ2
|
Original
|
|
PDF
|
SC-75
Abstract: SC-76 SC-78 SC-89 MP-25ZK TO-252 MP-3ZK SC-95 D18025EJ2V0IF00
Text: Information TAPING SPECIFICATIONS OF SURFACEMOUNTED DISCRETE DEVICES Document No. D18025EJ2V0IF00 2nd edition Date Published July 2006 N CP(K) 2006 • The information in this document is current as of June, 2006. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
|
Original
|
D18025EJ2V0IF00
SC-75
SC-76
SC-78
SC-89
MP-25ZK
TO-252 MP-3ZK
SC-95
D18025EJ2V0IF00
|
PDF
|
D1802
Abstract: MP-25Z TO-252 MP-3ZK mini mold transistor 25 sc 88a 504 SC-75 SC-76 SC-78 SC-89 MP-25ZP
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
|
PDF
|
MPA2733GR
Abstract: MPA2733 2sk4075 MOSFET 8PIN nec power mosfet bare die np 2SK4213 mpa602t 2SJ647M 2SKxxxx NP100P04PDG
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
|
Original
|
O-263
O-252
mPA672T.
mPA675T.
mPA677TB.
mPA678TB.
mPA679TB.
M8E0710J
D18669JJ3V0SG
D18669JJ3V0SG003
MPA2733GR
MPA2733
2sk4075
MOSFET 8PIN
nec power mosfet bare die np
2SK4213
mpa602t
2SJ647M
2SKxxxx
NP100P04PDG
|
PDF
|
smd code marking NEC
Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 52 10A 38w smd transistor smd mark code 38w SMD 8PIN IC MARKING CODE 251 marking code E1 SMD 5pin 6pin dip SMD mosfet MARKING code T mosfet SMD CODE PACKAGE SOT89 52 10A marking code E2 p SMD Transistor TRANSISTOR SMD MARKING CODE MP
Text: Power Management Devices Selection Guide > Power MOSFETs > ESD Protection Diodes > Regulators August 2008 www.am.necel.com/powermanagement TABLE OF CONTENTS Contents Low-Voltage Power By Part
|
Original
|
G18756EU3V0SG00
smd code marking NEC
TRANSISTOR SMD CODE PACKAGE SOT89 52 10A
38w smd transistor
smd mark code 38w
SMD 8PIN IC MARKING CODE 251
marking code E1 SMD 5pin
6pin dip SMD mosfet MARKING code T
mosfet SMD CODE PACKAGE SOT89 52 10A
marking code E2 p SMD Transistor
TRANSISTOR SMD MARKING CODE MP
|
PDF
|
d1833
Abstract: 6pin hwson D18337JJ1V0AN001 hwson 6pin D18337JJ1V0AN nec mosfet
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
|
Original
|
D18337JJ1V0AN001
M8E02
D18337JJ1V0AN
d1833
6pin hwson
D18337JJ1V0AN001
hwson 6pin
D18337JJ1V0AN
nec mosfet
|
PDF
|
2SC5664
Abstract: 2sc5292 NPN transistor SST 117 D1859 2sK4075 TRANSISTOR 2sc945 2SK4075 PC78L05J 2SK3918 2sk3326
Text: Process Trend On-Resistance Reduction with UMOS Technology 1.0 1.0 RDS on (UMOS1 = 1.0) Upper value : Nch 30 V class Lower value : Nch 60 V class 0.8 0.8 1st Generation 0.58 0.64 (Trench) 2nd Generation UMOS 1 Lower On-Resistance 0.46 0.53 3rd Generation
|
Original
|
D18597EJ1V0SG
2SC5664
2sc5292
NPN transistor SST 117
D1859
2sK4075 TRANSISTOR
2sc945
2SK4075
PC78L05J
2SK3918
2sk3326
|
PDF
|
PA2451
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2451 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION 0.5±0.1 6 2 5 3 4 0.25 +0.1 −0.05 1 1.85±0.1 PACKAGE DRAWING Unit : mm The µPA2451 is a switching device which can be driven directly by a 2.5 V power source.
|
Original
|
PA2451
PA2451
|
PDF
|
pa2450
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2450 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING 6 2 5 3 4 FEATURES • 2.5 V drive avaliable • Low on-state resistance RDS on 1 = 17.5 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A) RDS(on)2 = 18.5 mΩ MAX. (VGS = 4.0 V, ID = 4.0 A)
|
Original
|
PA2450
PA2450TL
pa2450
|
PDF
|
PA2451C
Abstract: hwson 6pin PA2451CTL-E1-A PA2451CTL
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2451C N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING 6 2 5 3 4 2.0±0.1 1 0.25 +0.1 -0.05 0.5±0.1 0.5±0.1 The μ PA2451C is a switching device, which can be driven directly by a 2.5 V power source. The μ PA2451C features a low on-state resistance and excellent
|
Original
|
PA2451C
PA2451C
hwson 6pin
PA2451CTL-E1-A
PA2451CTL
|
PDF
|
pa2450b
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2450B N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING 6 2 5 3 4 2.0±0.1 0.5±0.1 0.5±0.1 1 0.25 +0.1 -0.05 The µ PA2450B is a switching device, which can be driven directly by a 2.5 V power source. The µ PA2450B features a low on-state resistance and
|
Original
|
PA2450B
PA2450B
|
PDF
|
U6000
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2452 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING 6 2 5 3 4 2.0±0.1 0.5±0.1 0.5±0.1 excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
|
Original
|
PA2452
PA2452
U6000
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2450C N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING 6 2 5 3 4 2.0±0.1 1 0.25 +0.1 -0.05 0.5±0.1 0.5±0.1 The μ PA2450C is a switching device, which can be driven directly by a 2.5 V power source. The μ PA2450C features a low on-state resistance and excellent
|
Original
|
PA2450C
PA2450C
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2451B N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING 6 2 5 3 4 2.0±0.1 0.5±0.1 0.5±0.1 1 0.25 +0.1 -0.05 The µ PA2451B is a switching device, which can be driven directly by a 2.5 V power source. The µ PA2451B features a low on-state resistance and
|
Original
|
PA2451B
PA2451B
|
PDF
|
|
|
PA2450
Abstract: No abstract text available
Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor µ PA2450 N チャネル パワーMOS FET スイッチング用 µPA2450 は，2.5 V 電源系による直接駆動が可能なスイッチング素子 外形図（単位: mm）
|
Original
|
PA2450
PA2450
PA2450TL
HWSON4521
G15612JJ1V0DS
|
PDF
|
PA2451
Abstract: No abstract text available
Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor µ PA2451 N チャネル パワーMOS FET スイッチング用 µPA2451 は，2.5 V 電源系による直接駆動が可能なスイッチング素子 外形図（単位: mm）
|
Original
|
PA2451
PA2451
PA2451TL
HWSON4521
G15621JJ1V0DS
|
PDF
|
PA2451
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
|
PDF
|
pa2450
Abstract: G156
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
|
PDF
|
RJK03P7DPA
Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1
Text: RENESAS Electronics New Product Highlight Highlight of Discrete Devices Renesas Electronics Corporation Analog & Power Devices Marketing & Production Planning Division July 2013 2012 Renesas Electronics Corporation. All rights reserved. 00000-A RENESAS Discrete Devices Position
|
Original
|
0000-A
PAE-AA-12-0177-1
PAE-AA-12-0049-1
RJK03P7DPA
NP109N055PUJ
rjh60d7bdpq
rjh60t04
rjp65t43
NP75N04YUG
NP60N055MUK
NP109N04PUK
RJU6052SDPD-E0
PS2761B-1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
|
PDF
|
pa245
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
M8E0909E)
pa245
|
PDF
|
pa2451
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
M8E0909E)
|
PDF
|
