HVSON12
Abstract: No abstract text available
Text: Reflow soldering footprint Footprint information for reflow soldering of HVSON12 package SOT1179-1 Gx D 0.105 P C SPx nSPx SPy Hy Gy SLy nSPy By Ay SLx Generic footprint pattern Refer to the package outline drawing for actual layout solder land solder paste deposit
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HVSON12
OT1179-1
sot1179-1
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Abstract: No abstract text available
Text: Package outline HVSON12: plastic thermal enhanced very thin small outline package; no leads; 12 terminals; body 4 x 6 x 0.85 mm SOT1179-2 X A B D A E A1 c terminal 1 index area detail X e1 1/2 e terminal 1 index area e 1 6 C C A B C v w b y y1 C L K Eh 12
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HVSON12:
OT1179-2
MO-229
sot1179-2
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Untitled
Abstract: No abstract text available
Text: AN11198 Life-time requirements of NXP Semiconductors HVSON12 plastic drivers Rev. 2 — 27 May 2013 Application note Document information Info Content Keywords BLP7G22-10, BLP7G22-05, LDMOS, HVSON12 Abstract This application note describes the process of how to safely operate NXP
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AN11198
HVSON12
BLP7G22-10,
BLP7G22-05,
HVSON12
BLP7G22-10
BLP7G22-05
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Untitled
Abstract: No abstract text available
Text: SOT1179-1 HV SO N1 2 HVSON12; reel pack; standard product orientation; 12NC ending 135 Rev. 1 — 21 September 2011 Packing information 1. Packing method Printed plano box Barcode label Reel Tape QA Seal Preprinted ESD warning PQ-label permanent Circular sprocket holes opposite the
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OT1179-1
HVSON12;
001aak603
OT1179-1
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Abstract: No abstract text available
Text: Package outline HVSON12: plastic thermal enhanced very thin small outline package; no leads; 12 terminals; body 4 x 6 x 0.85 mm SOT1179-1 X A B D E A A1 c terminal 1 index area detail X e1 1/2 e terminal 1 index area e 1 6 C C A B C v w b y y1 C L Eh 12 7
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HVSON12:
OT1179-1
MO-229
sot1179-1
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Untitled
Abstract: No abstract text available
Text: Reflow soldering footprint Footprint information for reflow soldering of HVSON12 package SOT1179-2 Gx D 0.105 P C nSPx SPx nSPy Hy Gy SLy SPy By Ay SLx solder land solder paste deposit solder land plus solder paste occupied area DIMENSIONS in mm P Ay By
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HVSON12
OT1179-2
sot1179-2
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Untitled
Abstract: No abstract text available
Text: Reflow soldering footprint Footprint information for reflow soldering of HVSON12 package SOT1352-1 6.26 0.3 0.8 1.3 1.1 1 0.105 0.85 6.2 5.25 0.9 2.2 4.25 5.95 5.2 occupied area solder resist solder lands solder paste Dimensions in mm Issue date www.nxp.com
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HVSON12
OT1352-1
sot1352-1
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Abstract: No abstract text available
Text: Package outline HVSON12: plastic thermal enhanced very thin small outline package; no leads; 12 terminals; body 6 x 5 x 0.85 mm SOT1352-1 X B D A E A A1 c detail X terminal 1 index area e1 e2 terminal 1 index area e v w b 1 6 C C A B C y y1 C L K Eh 12 7 Dh
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HVSON12:
OT1352-1
MO-229
sot1352-1
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Technical Specifications of DVB-T2 Transmitter
Abstract: No abstract text available
Text: BLP10H610 Broadband LDMOS driver transistor Rev. 2 — 22 April 2014 Objective data sheet 1. Product profile 1.1 General description A 10 W plastic LDMOS power transistor for broadcast transmitter and ISM applications at frequencies from HF to 1400 MHz. Table 1.
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BLP10H610
Technical Specifications of DVB-T2 Transmitter
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Abstract: No abstract text available
Text: BLP10H610 Broadband LDMOS driver transistor Rev. 1 — 20 January 2014 Objective data sheet 1. Product profile 1.1 General description A 10 W plastic LDMOS power transistor for broadcast transmitter and ISM applications at frequencies from HF to 1400 MHz.
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BLP10H610
2002/95/EC,
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GRM32ER71H106KA88L
Abstract: No abstract text available
Text: BLP7G22-10 LDMOS driver transistor Rev. 2 — 30 May 2013 Product data sheet 1. Product profile 1.1 General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Table 1. Application performance multiple frequencies
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BLP7G22-10
GRM32ER71H106KA88L
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Abstract: No abstract text available
Text: BLP25M705 Broadband LDMOS driver transistor Rev. 1 — 15 August 2013 Product data sheet 1. Product profile 1.1 General description A 5 W LDMOS power transistor for broadcast and industrial applications in the HF to 2500 MHz band. Table 1. Application information
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BLP25M705
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Abstract: No abstract text available
Text: BLP7G22-05 LDMOS driver transistor Rev. 2 — 20 August 2013 Product data sheet 1. Product profile 1.1 General description A 5 W plastic LDMOS power transistor for base station applications from 700 MHz to 2700 MHz band. Table 1. Application information Typical RF performance at Tcase = 25 C; in a class-AB application circuit.
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BLP7G22-05
IS-95
IS-95
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BLP7G22-10
Abstract: VW748
Text: BLP7G22-10 LDMOS driver transistor Rev. 1 — 13 February 2012 Objective data sheet 1. Product profile 1.1 General description The BLP7G22-10 is low power driver using NXP’s state of the art GEN7 LDMOS technology. This device is perfectly suited as general purpose driver in the frequency
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BLP7G22-10
BLP7G22-10
VW748
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Untitled
Abstract: No abstract text available
Text: BLP10H605 Broadband LDMOS driver transistor Rev. 2 — 18 April 2014 Objective data sheet 1. Product profile 1.1 General description A 5 W plastic LDMOS power transistor for broadcast transmitter and ISM applications at frequencies from HF to 1400 MHz. Table 1.
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BLP10H605
2002/95/EC,
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BGU7073
Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by
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Abstract: No abstract text available
Text: BLP25M710 Broadband LDMOS driver transistor Rev. 1 — 29 August 2013 Product data sheet 1. Product profile 1.1 General description A 10 W LDMOS power transistor for broadcast and industrial applications in the HF to 2500 MHz band. Table 1. Application information
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BLP25M710
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Abstract: No abstract text available
Text: BLP10H610 Broadband LDMOS driver transistor Rev. 3 — 25 September 2014 Product data sheet 1. Product profile 1.1 General description A 10 W plastic LDMOS power transistor for broadcast transmitter and ISM applications at frequencies from HF to 1400 MHz.
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BLP10H610
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9621s
Abstract: No abstract text available
Text: BLP7G22-05 LDMOS driver transistor Rev. 1 — 28 May 2013 Objective data sheet 1. Product profile 1.1 General description A 5 W plastic LDMOS power transistor for base station applications from 700 MHz to 2700 MHz band. Table 1. Application information Typical RF performance at Tcase = 25 C; in a class-AB production test circuit.
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BLP7G22-05
IS-95
IS-95
9621s
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