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    HVC359 Price and Stock

    Renesas Electronics Corporation HVC359TRF-E

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    Rochester Electronics HVC359TRF-E 115,896 1
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    HVC359 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    HVC359 Hitachi Semiconductor Variable Capacitance Diode Original PDF
    HVC359 Leshan Radio Company Variable Capacitance Diode for VCXO Original PDF
    HVC359 Renesas Technology Diode, Variable Capacitance Diode for VCO Original PDF
    HVC359 Renesas Technology Variable Capacitance Diode for VCO Original PDF
    HVC359TRF Hitachi Semiconductor DIODE VAR CAP SINGLE 15V 24.8PF 2UFP TAPE Original PDF

    HVC359 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HVC359

    Abstract: 208419A DSA003642
    Text: HVC359 Variable Capacitance Diode for VCXO ADE-208-419A Z Rev. 0 Dec. 1998 Features • High capacitance ratio and good C-V linearity. • To be usable at low voltage. • Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information


    Original     		PDF HVC359 ADE-208-419A HVC359 208419A DSA003642

    hvc359 spice

    Abstract: Hitachi DSAUTAZ005
    Text: HVC359 Spice parameter * Model generated on Sep 24, 96 * MODEL FORMAT: HITACHI SPICE * HITACHI DIODE Model . MODEL HVC359 ZDV D +EG=1.1100E+00 +CJO=8.7500E-11 +TT=5.1390E-06 +CJO2=1.3012E-10 +COFF=2.0000E-12 +IS=1.6700E-15 +PB=7.6000E-01 +BV=1.5000E+01 +M2=1.8310E+00


    Original     		PDF HVC359 1100E 7500E-11 1390E-06 3012E-10 0000E-12 6700E-15 6000E-01 5000E hvc359 spice Hitachi DSAUTAZ005

    transistor mark code H1

    Abstract: transistor mark code H7 Variable Capacitance Diode HVR100 mark CA MARK CODE N1 rf transistor mark code H1 HVB14S HVC131 HVC132
    Text: RF-Diodes PIN-Diodes Variable Capacitance Diodes HVB14S HVC200A HVC202A HVC202B HVC300A HVC306A HVC308A HVC317B HVC350B HVC351 HVC355B HVC357 HVC358B HVC359 HVC362 HVC363A HVC365 HVC369B HVC372B HVC374B HVC131 HVC132 HVC133 HVC134 HVM121WK HVM131S HVM131SR


    Original     		PDF HVB14S HVC200A HVC202A HVC202B HVC300A HVC306A HVC308A HVC317B HVC350B HVC351 transistor mark code H1 transistor mark code H7 Variable Capacitance Diode HVR100 mark CA MARK CODE N1 rf transistor mark code H1 HVB14S HVC131 HVC132

    Hitachi DSA002719

    Abstract: No abstract text available
    Text: HVC359 Variable Capacitance Diode for VCXO ADE-208-419D Z Rev. 1 Features • High capacitance ratio and good C-V linearity. • To be usable at low voltage. • Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No.


    Original     		PDF HVC359 ADE-208-419D HVC359 100MHz 200pF, SC-79 Hitachi DSA002719

    HVC359

    Abstract: Hitachi DSA0047
    Text: HVC359 Variable Capacitance Diode for VCO ADE-208-419B Z Rev.2 Apr. 2002 Features • High capacitance ratio and good C-V linearity. • To be usable at low voltage. • Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information


    Original     		PDF HVC359 ADE-208-419B D-85622 D-85619 HVC359 Hitachi DSA0047

    Untitled

    Abstract: No abstract text available
    Text: HVC359 Variable Capacitance Diode for VCO REJ03G0489-0300 Previous: ADE-208-419B Rev.3.00 Jan 17, 2005 Features • High capacitance ratio and good C-V linearity. • To be usable at low voltage. • Ultra small Flat Lead Package (UFP) is suitable for surface mount design.


    Original     		PDF HVC359 REJ03G0489-0300 ADE-208-419B) HVC359

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Variable Capacitance Diode for VCXO HVC359 FEATURES 1 • High capacitance ratio and good C-V linearity. • To be usable at low voltage. • Ultra small Flat Package UFP is suitable for surface mount design. 2 SOD– 523 1 CATHODE


    Original     		PDF HVC359 200pF HVC359

    HVC359

    Abstract: No abstract text available
    Text: HVC359 Variable Capacitance Diode for VCXO ADE-208-419A Z Rev 0 Dec. 1998 Features • High capacitance ratio and good C-V linearity. • To be usable at low voltage. • Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information


    Original     		PDF HVC359 ADE-208-419A HVC359

    HVC359

    Abstract: No abstract text available
    Text: HVC359 Variable Capacitance Diode for VCO REJ03G0489-0300 Previous: ADE-208-419B Rev.3.00 Jan 17, 2005 Features • High capacitance ratio and good C-V linearity. • To be usable at low voltage. • Ultra small Flat Lead Package (UFP) is suitable for surface mount design.


    Original     		PDF HVC359 REJ03G0489-0300 ADE-208-419B) Unit2607 HVC359

    Hitachi DSA00774

    Abstract: HVC359 HVC365 ADE-208-419
    Text: ADE-208-419 Z HVC359 Variable Capacitance Diode for VCXO Rev. 0 Nov. 1995 Features Outline • High capacitance ratio and good C-V linearity. • To be usable at low voltage. • Ultra small Flat Package (UFP) is suitable for surface mount design. Cathode mark


    Original     		PDF ADE-208-419 HVC359 100MHz 200pF HVC365 SC-79 Hitachi DSA00774 HVC359 HVC365

    MRF581

    Abstract: 2SK163 BFG480W NB b6 smd transistor 2SK508 SMD transistor n36 bf998 TEF6860HL 3SK290 baw 92
    Text: RF᠟‫ݠ‬㄀8⠜ RF RFׂ೗‫ڦ‬ᆌᆩࢅยऺ๮֩ 2006౎6ሆ ݀քන೺ǖ2006౎6ሆ ࿔ॲຩႾࡽǖ9397 750 15589 Henk RoelofsLjޭጺ֋&ጺঢ়૙RFׂ೗ ०঻ ௅ᅃӲԨ࿢்‫ࣷۼ‬ၠጲम༵‫؜‬཈቟ᅜ߀฀࿢்‫ڦ‬RF๮֩ă‫ڼ‬8Ӳᄺփ૩ྔă࿢்ᅙཁेକ߸‫ܠ‬एᇀ


    Original     		PDF

    Motorola transistor smd marking codes

    Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
    Text: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.


    Original     		PDF

    HVC359

    Abstract: No abstract text available
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF D-85622 D-85619 HVC359

    DIODE marking S4 59A

    Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
    Text: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3


    Original     		PDF REJ16G0002-2200 DIODE marking S4 59A DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323

    uaf4000

    Abstract: toshiba smd marking code transistor smd code marking wl sot23 RF LNB C band chipset M74 marking BFG480W SMD transistor n36 vHF amplifier module 2450Mhz TOSHIBA DIODE CATALOG DIODE RF DETECTOR
    Text: RFマニュアル第9版 RF製品用のアプリケーションおよび設計マニュアル 2006年11月 date of release: November 2006 document order number: 9397 750 15817 Henk RoelofsRF製品担当副社長兼ゼネラル・マネージャー はじめに


    Original     		PDF 20GHz uaf4000 toshiba smd marking code transistor smd code marking wl sot23 RF LNB C band chipset M74 marking BFG480W SMD transistor n36 vHF amplifier module 2450Mhz TOSHIBA DIODE CATALOG DIODE RF DETECTOR

    HVC359

    Abstract: ADE-208-419
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF d5-900 Unit2607 HVC359 ADE-208-419

    IR1 DIODE

    Abstract: No abstract text available
    Text: RF-Diodes PIN-Diodes Variable Capacitance Diodes HVB14S HVC131 HVC132 HVC133 HVM121WK HVM131S HVM131SR HVM132 HVM132WK HVM14 HVM14S HVM14SR HVM187S HVM187WK HVU131 HVU132 HVU133 HVU187 HVC200A HVC202A HVC300A HVC306A HVC308A HVC317B HVC350B HVC351 HVC355B


    Original     		PDF HVB14S HVC131 HVC132 HVC133 HVM121WK HVM131S HVM131SR HVM132 HVM132WK HVM14 IR1 DIODE

    7054F

    Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
    Text: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver


    Original     		PDF 2sc4537 2sc454. 2sc4591 2sc4592 2sc4593 2sc460. 2sc4628 2sc4629 2sc4643 2sc4680 7054F BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557

    tcxo philips 4322

    Abstract: philips tcxo 4322 190 ISO9001-Certified philips bfq32 philips bare die datasheet 2SK170BL ON4749 philips BFG196 S8740230 toshiba fet databook 2sk162 hitachi
    Text: RF Manual 5th edition Product and design manual for RF Products October 2004 Semiconductors RF Manual Philips Semiconductors 5th edition Product and design manual for RF Products  Koninklijke Philips Electronics N.V. 2004 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The


    Original     		PDF

    BFG591 amplifier

    Abstract: 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23
    Text: RF手册 第12版 RF产品的应用和设计手册 2009年6月 Experience high-performance analog 体验高性能模拟产品 恩智浦RF手册令设计更简易 恩智浦 RF手册是当今RF设计市场上最重要的参考工具之一，展示了我们恩智浦半导体 (NXP


    Original     		PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN BFG591 amplifier 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23

    RF1119

    Abstract: TZA3036 lnb ku UAA 1006 BF862 AM LNA BFG480W ic lnb 2SK163-L TFF1003 TFF1003HN
    Text: RF᠟‫ݠ‬㄀11⠜ RFѻકⱘᑨ⫼੠䆒䅵᠟‫ݠ‬ 2008ᑈ9᳜ www.nxp.com 2008 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract,


    Original     		PDF PMBFJ177 PMBFJ308 PMBFJ309 PMBFJ310 PMBFJ620 PRF947 PRF949 PRF957 TFF1000HN TFF1003HN RF1119 TZA3036 lnb ku UAA 1006 BF862 AM LNA BFG480W ic lnb 2SK163-L TFF1003 TFF1003HN

    Untitled

    Abstract: No abstract text available
    Text: HVC359 Variable Capacitance Diode for VCXO HITACHI Features • High capacitance ratio and good C-V linearity. • To be usable at low voltage. • Ultra small Flat Package UFP is suitable for surface mount design. Ordering Information Type No. Laser Mark


    OCR Scan     		PDF HVC359 ADE-208-419D 100MHz 200pF, SC-79

    ADE-208-419

    Abstract: No abstract text available
    Text: HITACHI ADE-208-419 Z HVC359 Variable Capacitance capacitan Diode forVCXO HITACHI Features Rev. 0 Nov. 1995 Outline • High capacitance ratio and good C-V linearity. • To be usable at low voltage. • JJhra small Flat Package (UFP) is suitable for surface mount design.


    OCR Scan     		PDF HVC359 ADE-208-419 HVC359 100MHz SC-79

    Untitled

    Abstract: No abstract text available
    Text: HVC359-Variable Capacitance Diode for VCXO Features Outline • High capacitance ratio and good C-V linearity. • To be usable at low voltage. • Ultra small B at Package UFP is suitable for surface mount design. Cathode mark ( Mark 1 1C 1- - - _


    OCR Scan     		PDF HVC359-----------Variable HVC359 100MHz C-200pF HVC359