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    Text: HY514400B Series - H Y U N D A I 1Mx4-bit CMOS DRAM DESCRIPTION The HY514400B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514400B utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide


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    PDF HY514400B HY514400B 4b750flfl 1AC11-10-MAY95 HY514400BJ HY514400BLJ HV514400BSLJ