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    lb 123t

    Abstract: HLB123T 123T LB123T
    Text: HI-SINCERITY Spec. No. : HT200402 Issued Date : 1993.05.15 Revised Date : 2006.02.20 Page No. : 1/4 MICROELECTRONICS CORP. HLB123T NPN EPITAXIAL PLANAR TRANSISTOR Description The HLB123T is designed for high voltage. High speed switching inductive circuits


    Original     		PDF HT200402 HLB123T HLB123T O-126 183oC 217oC 260oC 10sec lb 123t 123T LB123T

    Untitled

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HT200402 Issued Date : 1993.05.15 Revised Date : 2004.09.30 Page No. : 1/4 MICROELECTRONICS CORP. HLB123T NPN EPITAXIAL PLANAR TRANSISTOR Description The HLB123T is designed for high voltage. High speed switching inductive circuits


    Original     		PDF HT200402 HLB123T HLB123T O-126 183oC 217oC 260oC