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    HT 1000 POWER AMPLIFIER Search Results

    HT 1000 POWER AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation

    HT 1000 POWER AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    INA333

    Abstract: INA333-HT ecg msp430
    Text: INA333-HT www.ti.com SBOS514 – MARCH 2010 Micro-Power, Zerø-Drift, Rail-to-Rail Out Instrumentation Amplifier Check for Samples: INA333-HT FEATURES 1 • 2 • • • • • • • • Low Offset Voltage: 25 mV max at 25°C , G ≥ 100 Low Drift: 0.2 mV/°C, G ≥ 1000


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    INA333-HT SBOS514 INA333 INA333-HT ecg msp430 PDF

    Untitled

    Abstract: No abstract text available
    Text: INA333-HT www.ti.com SBOS514 – MARCH 2010 Micro-Power, Zerø-Drift, Rail-to-Rail Out Instrumentation Amplifier Check for Samples: INA333-HT FEATURES 1 • 2 • • • • • • • • Low Offset Voltage: 25 mV max at 25°C , G ≥ 100 Low Drift: 0.2 mV/°C, G ≥ 1000


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    INA333-HT SBOS514 C/210 PDF

    BF256

    Abstract: OPA335 PT100 SBOS514 OPA333 thermocouple INA333-HT msp430 pt100 PT100 REF200 INA333 pt100 msp430 rtd pt100 probe
    Text: INA333-HT www.ti.com SBOS514 – MARCH 2010 Micro-Power, Zerø-Drift, Rail-to-Rail Out Instrumentation Amplifier Check for Samples: INA333-HT FEATURES 1 • 2 • • • • • • • • Low Offset Voltage: 25 mV max at 25°C , G ≥ 100 Low Drift: 0.2 mV/°C, G ≥ 1000


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    INA333-HT SBOS514 BF256 OPA335 PT100 SBOS514 OPA333 thermocouple INA333-HT msp430 pt100 PT100 REF200 INA333 pt100 msp430 rtd pt100 probe PDF

    Untitled

    Abstract: No abstract text available
    Text: GaAs MMIC GN01094B GaAs IC with built-in ferroelectric Unit : mm 0.12 +0.05 −0.02 1.25±0.1 M Di ain sc te on na tin nc ue e/ d • Features 0.1 4 2.1±0.1 5 6 0.425 0.2±0.05 1 3 2 0.65 0.425 R0.2 • Super miniature S-Mini 6-pin package (2125 size) • Transmitter amplifier : Wide dynamic range on low operation current


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    GN01094B PDF

    AN5279

    Abstract: No abstract text available
    Text: ICs for TV AN5279 Mono channel SEPP audio power amplifier IC • Overview The AN5279 is a monolithic integrated circuit designed for 5.0 W 19 V, 8 Ω output audio power amplifier. It is a mono channel SEPP IC suitable for TV application. ■ Features or


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    AN5279 AN5279 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SC4543 Silicon NPN epitaxial planer type For video amplifier Unit: mm *1 *2 1.0–0.2 0.5±0.08 1.5±0.1 Ta=25˚C 0.4±0.04 3.0±0.15 ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in de for


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    2SC4543 PDF

    AUDIO AMP BOOK

    Abstract: No abstract text available
    Text: ICs for Audio Common Use AN7118S Low Voltage Dual 35mW Audio Power Amplifier Circuits BTL 300mW • Overview Unit : mm 1.27 0.4±0.25 M Di ain sc te on na tin nc ue e/ d ■ Features • Low voltage operation : VCC = 1.8V to 4.5V • Reduced voltage operation is available.


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    AN7118S 300mW) AN7118S AUDIO AMP BOOK PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SA1737 Silicon PNP epitaxial planer type For video amplifier Unit: mm * +0.25 0.4max. 0.4±0.08 +0.1 0.5±0.08 1.5±0.1 0.4±0.04 3.0±0.15 Ta=25˚C ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te


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    2SA1737 PDF

    Untitled

    Abstract: No abstract text available
    Text: GaAs MMIC GN01096B GaAs IC with built-in ferroelectric Unit: mm 0.12 +0.05 −0.02 • Features 0.1 0.2±0.1 1.25±0.1 4 2.1±0.1 5 6 0.425 0.2±0.05 For low noise amplifier of cellular phone Other communication equipment 1 0.425 M Di ain sc te on na tin nc


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    GN01096B PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SA1487 Silicon PNP epitaxial planer type For video amplifier Unit: mm 5.9±0.2 4.9±0.2 ● ● 8.6±0.2 M Di ain sc te on na tin nc ue e/ d • Features High transition frequency fT. Small collector output capacitance Cob. +0.3 0.7–0.2 0.7±0.1


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    2SA1487 PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SC3943 Silicon NPN epitaxial planar type For video amplifier 2.7±0.2 14.0±0.5 Rating Unit Collector-base voltage Emitter open VCBO 110 V Collector-emitter voltage (Resistor between B and E) VCER 100 V VCEO Emitter-base voltage (Collector open)


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    2SC3943 PDF

    CBVK741B019

    Abstract: F63TNR PN2222N TN3440A
    Text: TN3440A TN3440A C TO-226 B E NPN General Purpose Amplifier This device is designed for use in horizontal driver, class A off-line amplifier and off-line switching applications. Sourced from Process 36. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


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    TN3440A O-226 CBVK741B019 F63TNR PN2222N TN3440A PDF

    transistor TD-100 le

    Abstract: pn222 CBVK741B019 F63TNR PN2222N TN3019A ad label information on the box
    Text: TN3019A TN3019A C TO-226 B E NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 500 mA and collector voltages up to 80 V. Sourced from Process 12. Absolute Maximum Ratings*


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    TN3019A O-226 transistor TD-100 le pn222 CBVK741B019 F63TNR PN2222N TN3019A ad label information on the box PDF

    MAGNETICS 77439-A7

    Abstract: 55930-A2 55117 core magnetics 77894-A7 77083-A7 55050-A2 55083-A2 Core 55120-A2 55930a2 58930-a2
    Text: Powder Cores • Molypermalloy ■ High Flux ■ Kool Mµ Since 1949, MAGNETICS, a division of Spang & Company, has been a leading world supplier of precision, high quality, magnetic components and materials to the electronics industry. Applications for


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    PDF

    HA200-SB

    Abstract: construction hall effect transducers 200-SI 500w power amplifier pcb diagram 100ARMS PCB Mounting Hall Effect Current Transformer HT 200-srud 25-NP HT 500 srud transducers
    Text: E17755 Issued July 1994 Halleffect transducers,current and voltage This data sheet covers the following products. RS stock no. 286-311 286-327 286-333 286-349 286-355 286-377 286-383 286-399 286-406 286-412 286-428 286-434 286-440 286-456 286-462 286-478 286-484


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    E17755 50/100A HA200-SB construction hall effect transducers 200-SI 500w power amplifier pcb diagram 100ARMS PCB Mounting Hall Effect Current Transformer HT 200-srud 25-NP HT 500 srud transducers PDF

    28644

    Abstract: HA200-SB 500-SBD 25-NP 400-SID 200-SU PRIM configuration hall current transducer 10A hall current transducer LA 100P construction hall effect transducers
    Text: Issued March 1995 019-307 Data Pack E Data Sheet Hall effect transducers, current and voltage This data sheet covers the following products: RS stock no. 286-311 286-327 286-333 286-349 286-355 286-377 286-383 286-399 286-406 286-412 286-428 286-434 286-440


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    50/100A 28644 HA200-SB 500-SBD 25-NP 400-SID 200-SU PRIM configuration hall current transducer 10A hall current transducer LA 100P construction hall effect transducers PDF

    AM-184

    Abstract: AMC-184
    Text: f a n A M P ,c o m p a n y Cascadable Thin Amplifier, 20 dB Gain 10-2000 MHz AM-/AMC-184 V2.00 Features TO-8-1 0.150 TYP 3 8 DC IN • High Gain, 20 dB • Low Power, 60 mA Max RF OUT Tf 0.220 MIN RF IN (5.6) Guaranteed Specifications* 0.300 TYP (7.8) (From -55° C to +85° C Case Temp)


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    AM-/AMC-184 AM-184 AMC-184 PDF

    U 114

    Abstract: AM-142 AMC-142
    Text: f a n A M P ,c o m p a n y Low Noise Amplifier, 12 dB Gain 200-1000 MHz AM-/AMC-142 V2.00 Features • 2.2 dB Typical Midband Noise Figure • +6 dBm Typical Midband Output Power • +20 dBm Typical Midband Third Order Intercept TO-8-1 0.150 TYP DC IN 3 8


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    AM-/AMC-142 U 114 AM-142 AMC-142 PDF

    AM-155

    Abstract: AMC-155
    Text: f a n A M P ,c o m p a n y High Dynamic Range Amplifier, 12.5 dB Gain 300 -1000 MHz AM-/AMC-155 V2.00 Features TO-8-1 DC IN • 2.5 dB Typical Midband Noise Figure • +21 dBm Typical Midband O utput Power • +37 dBm Typical Midband Third Order Intercept


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    AM-/AMC-155 AM-155 AMC-155 PDF

    AM-180

    Abstract: AMC-180
    Text: f a n A M P ,c o m p a n y Cascadable Thin Film Amplifier, 10 dB Gain 10 -2000 MHz AM-/AMC-180 V2.00 Features TO-8-1 • +14 dBm Typical 1 dB Compression • 5 dB Typical Noise Figure • 1.4:1 Typical VSWR 0.150 TYP 3 8 DC IN RF OUT Tf 0.220 MIN RF IN (5.6)


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    AM-/AMC-180 112nd AM-180 AMC-180 PDF

    Untitled

    Abstract: No abstract text available
    Text: an A M P com pany Low Noise Amplifier, 12 dB Gain 200-1000 MHz AM-/AMC-142 V2.00 Features 0.150 TYP 3.8 TO-8-1 • 2.2 dB T ypical M id b a n d N oise F igure • +6 dB m T ypical M id b a n d O u tp u t P o w e r • +20 dB m T ypical M id b a n d T h ird O rd e r In te rc e p t


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    AM-/AMC-142 PDF

    AM-182

    Abstract: AMC-182 MA660
    Text: f a n A M P ,c o m p a n y Cascadable Thin Film Amplifier, 28 dB Gain 5 -1000 MHz AM-/AMC-182 V2.00 Features TO-8-1 0.150 TYP • High Gain — 28.5 dB Typical • Low Noise — 2.7 dB Typical 3 8 DC IN RF OUT Guaranteed Specifications* Tf (From - 55°C to + 85°C Case Temp)


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    AM-/AMC-182 AM-182 AMC-182 MA660 PDF

    AM-183

    Abstract: AMC-183
    Text: 7“ a n A M P company Cascadable Thin Film Amplifier, 28.5 dB Gain 10 - 1000 MHz AM-/AMC-183 V2.00 Features TO-8-1 DC IN • High Gain — 28 dB Typical • High Compression — +15 dBm Typical RF OUT Guaranteed Specifications* GND From - S 5 ° C t o + 8 5 °C Case Temp


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    AM-/AMC-183 AM-183 AMC-183 PDF

    AM-176

    Abstract: AMC-176
    Text: an A M P com pany Casadable Thin Film Amplifier, 13 dB Gain 5 - 1000 MHz AM-/AMC-176 V2.00 TO-8-1 Features • 4.0 dB Typical Noise Figure • 13-5 dBm Typical Midband 1 dB Compression • 1.25:1 Typical VSWR RF OUT GND Guaranteed Specifications* Frequency Range


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    AM-/AMC-176 AM-176 AMC-176 PDF