HSB1109S Search Results

HSB1109S Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
HSB1109S		Hi-Sincerity Mocroelectronics	PNP Epitaxial Planar Transistor		Original	PDF

HSB1109S Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
HSB1109S Abstract: HSD1609S Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6514 Issued Date : 1993.03.15 Revised Date : 2002.02.06 Page No. : 1/4 HSB1109S PNP EPITAXIAL PLANAR TRANSISTOR Description The HSB1109S is designed for low frequency and high voltage amplifier applications complementary pair with HSD1609S.	Original	HE6514 HSB1109S HSB1109S HSD1609S. HSD1609S	PDF
hsb1109s Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 HSB1109S TRANSISTOR PNP 1.EMITTER FEATURES z Complementary Pair with HSD1609S. 2.COLLECTOR 3.BASE APPLICATIONS z Low Frequency and High Voltage Amplifier MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)	Original	HSB1109S HSD1609S. -140V -10mA -30mA -10mA, 100MHz hsb1109s	PDF
HSB1109S Abstract: HSD1609S Text: HI-SINCERITY Spec. No. : HE6514 Issued Date : 1993.03.15 Revised Date : 2005.02.14 Page No. : 1/5 MICROELECTRONICS CORP. HSB1109S PNP EPITAXIAL PLANAR TRANSISTOR Description The HSB1109S is designed for low frequency and high voltage amplifier applications complementary pair with HSD1609S.	Original	HE6514 HSB1109S HSB1109S HSD1609S. 183oC 217oC 260oC HSD1609S	PDF
HSB1109S Abstract: HSD1609S O125C Text: HI-SINCERITY Spec. No. : HE6515 Issued Date : 1993.03.15 Revised Date : 2005.02.15 Page No. : 1/5 MICROELECTRONICS CORP. HSD1609S NPN EPITAXIAL PLANAR TRANSISTOR Description The HSD1609S is designed for low frequency high voltage amplifier applications, complementary pair with HSB1109S.	Original	HE6515 HSD1609S HSD1609S HSB1109S. 183oC 217oC 260oC HSB1109S O125C	PDF
HSD1609S Abstract: HSB1109S Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6515 Issued Date : 1993.03.15 Revised Date : 2002.01.15 Page No. : 1/4 HSD1609S NPN EPITAXIAL PLANAR TRANSISTOR Description The HSD1609S is designed for low frequency high voltage amplifier applications, complementary pair with HSB1109S.	Original	HE6515 HSD1609S HSD1609S HSB1109S. HSB1109S	PDF
XL1225 equivalent Abstract: 2N3053 equivalent BF422 EQUIVALENT bc238 equivalent 2N6397 equivalent 2N5551 equivalent 2SB772 equivalent BC109 BC184 BC549 2sd880 equivalent BT169 equivalent Text: Transistors, SCR, IC CROSS REFERENCE / EQUIVALENT TABLE R Cross Reference Table 1 / 13 INDUSTRY TYPE No. DC COMP. TYPE No. Cross Reference Table 2 / 13 PACKAGE INDUSTRY TYPE No. DC COMP. TYPE No. PACKAGE 2N2955 2N2955 TO-3 2SA952 2SA952 TO-92 2N3055 2N3055	Original	2N2955 2SA952 2N3055 2SB1426 2N3417 XL1225 equivalent 2N3053 equivalent BF422 EQUIVALENT bc238 equivalent 2N6397 equivalent 2N5551 equivalent 2SB772 equivalent BC109 BC184 BC549 2sd880 equivalent BT169 equivalent	PDF