Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SA1036 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR PNP 3 FEATURES ∙ Large IC. ICMax.= -500 mA ∙ Low VCE(sat). Ideal for low-voltage operation. 1 2 1. BASE 2. EMITTER 3. COLLECTOR MARKING : HP, HQ, HR
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OT-23
2SA1036
-10mA
-100mA
-20mA
100MHz
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2SA1036
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SA1036 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR PNP FEATURES ∙ Large IC. ICMax.= -500 mA ∙ Low VCE(sat). Ideal for low-voltage operation. 1. BASE 2. EMITTER 3. COLLECTOR MARKING : HP, HQ, HR
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OT-23
2SA1036
-100A
-10mA
-100mA
-20mA
100MHz
2SA1036
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Untitled
Abstract: No abstract text available
Text: MIL-C-26500 specifications TEST REQUIREMENTS MILITARY SPECIFICATIONS PYLE CONNECTOR CAPABILITIES Air Leakage Classes E, G, R & K 1 cu. inch per hr. max. -55°C (-67°F) Comply Altitude Immersion (Classes E, G, R & K) Sea level 1 inch of mercury, 3 cycles
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MIL-C-26500
MIL-C-5015D)
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SOT-23 HP
Abstract: 2SA1036
Text: 2SA1036 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Large IC. ICMax.= -500 mA Low VCE(sat). Ideal for low-voltage operation. MARKING : HP, HQ, HR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units
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2SA1036
OT-23
OT-23
-100A
-10mA
-100mA
-20mA
100MHz
SOT-23 HP
2SA1036
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2SA1036K
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SA1036K SOT-23-3L TRANSISTOR PNP FEATURES z Large IC. IC= -500 mA z Low VCE(sat). Ideal for low-voltage operation. 1. BASE 2. EMITTER 3. COLLECTOR MARKING : HP, HQ, HR
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OT-23-3L
2SA1036K
OT-23-3L
-100A
-10mA
-100mA
-20mA
100MHz
2SA1036K
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2SA1036K
Abstract: No abstract text available
Text: 2SA1036K SOT-23-3L Transistor PNP SOT-23-3L 1. BASE 2.92 2. EMITTER 0.35 3. COLLECTOR 1.17 Features 2.80 Large IC. IC= -500 mA Low VCE(sat). Ideal for low-voltage operation. 1.60 0.15 1.90 MARKING : HP, HQ, HR Dimensions in inches and (millimeters)
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2SA1036K
OT-23-3L
OT-23-3L
-100A
-10mA
-100mA
-20mA
100MHz
2SA1036K
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diode t03
Abstract: MJ150 mj15024 MJ2955 CV9936 T0220H dyv32 MJ15022 MJ802 MJ4502 transistor mj11032
Text: 4ÔE T> • Ö1331Ö7 000045Ö 7TT SEMELAB ISMLB ] SEMELAB LT]>7V*«i HI-REL BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Rel Code Type Number BYV32-150M-IS0 HR BYV32-2Q0M-IS0 HR I1YV32-200RM-IS0 HR BYV32-50M-IS0 HR BYV34-3ÜOM-ISO HR BYV34-400M-Is0 HR
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B1331Ã
Q00045Ã
BYV32-150M-IS0
BYV32-200M-ISO
YV32-200RM-ISO
BYV32-50M-IS0
BYV34-300M-IS0
BYV34-400M-Is0
BYV34-500M-Is0
BYW29-100M-Is0
diode t03
MJ150
mj15024
MJ2955
CV9936
T0220H
dyv32
MJ15022
MJ802 MJ4502
transistor mj11032
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db9f
Abstract: dsub 9p female D-Sub 9-pin D-Sub 9 db9f female d-sub-9 dsub9 dsub-9 TS040X360TNOPO
Text: Ibi Tip Electrical Co. Ltd. m Hr f Hr ^ K. ft/ ' 1 E-MAIL:ty@taiyip.com U R L :http ://www. taiyip .com CUSTOMER ELFA NO. 4414/2001 PART CUST.REF.NO. X 25 -5 3 2 -3 8 Certificace Number FM 34056 COLOUR 28AWG CABLE DB9F-DB9F MOLDED BEIGE UNIT DRAWN BY ï$ f i
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TY-129
TS040X360TNOPO
TY-278
12/7TX9C
16/7T
db9f
dsub 9p female
D-Sub 9-pin
D-Sub 9
db9f female
d-sub-9
dsub9
dsub-9
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ic MIP 391
Abstract: MIP 391 jh-1 94V0
Text: 2 3 A AD 1 51 DESCRIPTION RELEASED REV PER ECN CF1812 JPG OBS -3,-5,-7,-13 PER EC 0020-094!-S3 PER EC 0 0 2 0 -0 3 3 0 -9 5 PER EC 0020-0543-96 T.5. HR T.S. HR ¿JA FLAME RETARDANT 94V-0 RATEO GLASS FILLED POLYESTER; COLOR: BLACK. /2\ .000100-,000200 BRIGHT TIN OR BRIGHT TIN LEAD ON SOLDER TAIL, .000030
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CF1812
165UTYP
ic MIP 391
MIP 391
jh-1 94V0
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CD+Laser+pickup+kss+213D
Abstract: No abstract text available
Text: n i DOF-O-213D<9 8 .0 2 CD CSJ UD O ht m Hr U J uu K ) El o z o —1 ~o m m CO ro —1 v \w o H H if 33 CD O £ i O 'i 03 r- ^ w X y+ O m cn h rs CD if f co W CO ^ <T o —b Wt- —} CD U m h" 33 0r m z Hr o 0 s1 m Z3 —b O -3 O CD 3 CD Z3 cr o CB s Cl
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CDS01-
CD+Laser+pickup+kss+213D
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1117B 33
Abstract: 1117b ad hb 5153 a 1117b C5153 1j29 SL-2341 32
Text: 8 nJram S I ' M IM B* O R U I D T H ULHITIN 1 . Lie KIWI «»va. ii 1 o H REVISIONS AD 25 urn F REDRAWN fi R E V IS E D P E R 0010 0953-96 G PER EC 0504-0132-96 »3-3-96 iS HR TS HR C A R D SL AC CE PT S 1.80 071] 1.37 054] P, C ?0ARD OBSOLETE -D ±0.38C ±.01 5]
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Untitled
Abstract: No abstract text available
Text: 1 S Z09f r 0l PS ‘ON HR ft DATE REV. 2 QNIMVüa 4f=ilE 9.Sep. 2005 DON 058191 m W M n & NO. tu DR. DESCRIPTION REVISED FORM,ETC a m * m APPD. APPD. CHK. A . K mhwzcl M.SASAKI ±0 . 3 59.8 ( 3 1 .3 ) X . ) Í í <s D > CARD (ExpressCard/54) ( CO MP ONE NT
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ExpressCard/54)
PX22-SSRK-A2
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717HD
Abstract: 1508D
Text: ro t« tr Mte hr a t, ft M M <oÜmMvIot Customer drawing 22.22±0.25 6 .00 ± 0.20 8.89±0.25 11.43±0.25 13.97±0.25 0.51 U U LI U U =Tt 2.29 RECOMMENDED P.C.B LAYOUT (TOLERANCE + / - 0 . 0 3 ♦ 3 J 2 1 REVISIONS SYM DESCRIPTION ECN DATE APPROVED 02/15/08
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717HD
08/I5/
L717HDA26PD1CH3RC309
1508D
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TIPL780
Abstract: TIPL750 transistor BC 667 T1PL760A TIPL760 TIK760A TIPL760A TIPL760C BC 251 transistor
Text: 3 b TIPL76Q, TÌPL760A NPN SILICON POWER TRANSISTORS AUGUST Im • REVISEDMAV 1995 Rugged Triplo-Diffused Planar Construction TO-220 PACKAGE TOP VIEW 4 A Continuous Collector Current • Operating Characteristics Fully Guaranteed at 100“C Hr. • 1000 Volt Blocking Capability
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TIPL76Q,
PL760A
O-220
8VM801.
TIPL760
TIPL760A
TIPL750
T1PL760A
TCP741AC
TIPL780
transistor BC 667
TIK760A
TIPL760C
BC 251 transistor
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31DF
Abstract: 31DF 4 7 31df rectifier 31DF diode 31DF 2 7 11DF4 31DF1 31DF2 11DF2 11DF3
Text: Data Sheet No. PD-2.196 INTERNATIONAL RECTIFIER I«R 1 1 D F A IM D 3 1 D F S E R IE S 1 Amp and 3 Amp Fast Recovery Rectifiers Description/Features Major Ratings and Characteristics 11DF1 11DF2 11DF3 11DF4 31DF1 31DF2 31DF3 31DF4 Units 1.0 3.0 A , @ 50 Hr
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11DF1
11DF2
11DF3
11DF4
31DF1
31DF2
31DF3
31DF4
D-6000
31DF
31DF 4 7
31df rectifier
31DF diode
31DF 2 7
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Untitled
Abstract: No abstract text available
Text: A D O F - O - 2 1 3 E <0 3 . 0 8 > V co CX CM CNJ o < DC Q ojp □> 4 & ✓'-'N 1 _ _ S J ± 0 .3 8 .7 <=:- —SH N0TE1) ± 0.15 6.2 I^ |4^ ' I ^ cla > U1 -fc"0 30 a < to i Iin 1o vji rj- <= O m k > ~ (N0TE1) lx -n Ft= = hr 1 £3141 CO CTJ c4
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RLR RESISTORS
Abstract: No abstract text available
Text: fi3SJ£IS:3£^ftJS&StSIS£fii/iS§ ESTABLISHED RELIABILITY FIXED METAL FILM RESISTORS. RLR 947 R f i « ? MIL 05. 07, 20, 32,42 y&M : MIL-R- 39017 D ffi5 t k b * * * s o. 001 % /iooo Hr Qualified by Japanese Defence ministry : MIL-R- 39017 D Established Reliability Resistors
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M1L-STD-810
MIL-STD-202
100V3Z.
RLR RESISTORS
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Untitled
Abstract: No abstract text available
Text: HR DATA HIGH VOLTAGE SILICON BU 536 POWER S«ITCHING TO-3 NP« SHEET 8A; TRANSISTOR 75« SWITCH MODE CTV POWER SUPPLY APPLICATION ABSOLUTE MAXIMUM RATINGS ; Ta=25deg C SVHBÖL VALUE UNIT Collector Emitter Voltage VCES 1100 V Collector Emitter (sus) Voltage
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25deg
VCE4100V,
case-125
AZ240194PG/V/NK
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JC22S
Abstract: No abstract text available
Text: 1 IL ‘ ON #-/! 0 D AT E HR ft REV. Ì79Z170IPS DON m. m ñ & DESCRIPTION NO. tt m DR. a a CHK. * 3 APPD. APPD. ONIMVBQ 4fM ±0. 05 < !> 3 . 0 5 < > SECT. A-A ( SC A LE 2 : 1 ) T A B L E 1 T R E M I NAL t t =f- * 1, 17, 36, NUMBER TERMINAL LENGTH * * • * CX )
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79Z170IPS
JC22S
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marking JB SCHOTTKY BARRIER DIODE
Abstract: No abstract text available
Text: 4A45VTjw150V ~>3 -y h * —<•<! F S Q S 0 4 A 0 4 5 f f l iÉ Application Fully Molded similar to TÖ-220AC 0 * ^ t t « * Specification. Nihon Inter Electronics Corporation y T y 4 Hr— K '> 3 -y h Construction F Schottky Barrier Dkxie Schottky Barrier Diode
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Tjw150V
-220AC
FSQS04A045
UL94V-0
marking JB SCHOTTKY BARRIER DIODE
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Untitled
Abstract: No abstract text available
Text: J MIS DRAUl HO IS UNPUBLISHED. AD p. 51 r J«« ftEVtSIOWS otacAiwiw OATi » r MOBS -1 3 PER EC 0 0 2 0 -0 9 4 1 -9 3 C 9-2S -96 D PER EC 0 0 2 0 - 0 3 3 0 - 9 6 T .S . IT* rk hr : : * NO S N A P - I N P O L A R IZ IN G FEATURE P L A T E D W ITH . 0 0 0 0 3 0
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12-S-0S
12-TS-eS
t1322/a
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Untitled
Abstract: No abstract text available
Text: EDP NO. DIMENSIONS IN METRIC DO NOT SCALE DRAWING ENG. NO S D -5 10 1 0 -* * 1* CJl ft3-r *hr 3£ 2ft i* 5 jC. S* r+i g c5 vi m - vj - a TIM SM z3 SM 22.4 ~n 85 12.4 v*_,SC 7 J- a i iv> t i l gm s mLf ; m 3*1 zo an m zdM S5 E# sa 0 -c^ cn ro CaJ i# ^3 UKe
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UL94V-0
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SOT-89 FJ
Abstract: No abstract text available
Text: N J U 7 2 2 2 » > M -X 3 *2 3 I E ft * J Œ tK ^ U m^F- ^ 'S» $ M- if NJU7222->IJ-*’ li. Ü J * Œ f l l * ± 2 X Î 3 l ^ L f c « * * * a w r 7 C-KOS3«i¡ E « Œ * * Hr-/ I/*' i H IC T . » « I t S4MKŒS. £ * « « $ , mmî'S/X*. Üi*ŒRÆffltS
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NJU7222-
NJU7222L
NJU7222U
OT-89)
100mA)
100mA
100mA
SOT-89 FJ
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Untitled
Abstract: No abstract text available
Text: 2 . 1 B DATE ÜR & REV, SZZ6Eors W. H ft & D ESCRIPTION DON NO. m e DR. & U APPD. s m APPD. Ë Üá CHK. ‘ON QNIMVüQ #4feIl& ± 0 .4 P.O.B. T HR O UG H H O L E L O C A T I ON ( RE F. ) /In— Jl/n^T— X # # ) ± 0 .2 +0 . 3 -0 .1 (CONTACT +0 .1 -0 .3
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