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    Untitled

    Abstract: No abstract text available
    Text: ÍIP D 4 3 4 0 0 4 I d illi W 1 ,0 4 8 , 5 7 6 X 4 - B i t NEC Electronics Inc. Static CMOS RAM Description Pin Configuration The juPD434004 is a 1,048,576-word by 4-bit static RAM fabricated with advanced silicon-gate technology. A unique design with CMOS peripheral circuits and


    OCR Scan     		PDF juPD434004 576-word /JPD434004 32-Pin HPD434004 fiPD434004 pPD434004 6777B

    Untitled

    Abstract: No abstract text available
    Text: PRELIM IN A R Y DATA SHEET MOS INTEGRATED CIRCUIT ELECTRON DEVICE /¿PD434004 4 M BIT CM O S FAST STATIC RAM D E S C R IP T IO N The /iP D 434004 is a high-speed, 1048576 words by 4 -bit CMOS static RAM fabricated w ith short channel silicon-gate CMOS process. The ¿ PD434004 is a very high speed device using both an advanced CMOS process and excellent c ircu itry


    OCR Scan     		PDF PD434004 PD434004 juPD434004 uPD434004 32-pin

    Untitled

    Abstract: No abstract text available
    Text: bMETSaS OOMöTTI TMÖ • NECE NEC Fast Static RAMs ORGANIZATION FEATURES PACKAGE 128K x 8 Output enable 4SOJ 400-mil 15 ns 17 ns 20 ns |iPD431008LE - 15 - 17 -2 0 128K x 9 Output enable SOJ (400-mil) 15 ns 17 ns 20 ns |i.PD431009LE -1 5 -1 7 -2 0 6 4 K x 16


    OCR Scan     		PDF 400-mil) iPD431008LE PD431009LE PD431016LE HPD434001LE HPD434004LE