8449B
Abstract: HP 8447D 8349b HP 8347A HP 8348A HP 8447A 8349A 8447A 8447D 8348A
Text: IN99SEC029.QXD MiXmedia Sign-off: 8/25/98 10:03 AM Page 315 Client: Hewlett Packard [ ] as is Project: HP Test & Measurment 98 Catalog [ ] with changes mark in red [ / / ] date Amplifiers RF and Microwave Amplifiers 315 HP HP HP HP HP HP HP 8347A and HP 8447A/D Amplifiers
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IN99SEC029
447A/D
5091-0370E
8447D
com/go/tmc99
8447D
8349B
8449B
8449B
HP 8447D
8349b
HP 8347A
HP 8348A
HP 8447A
8349A
8447A
8348A
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ina series
Abstract: Signal Path Designer AN-S003
Text: INA Series RFIC Amplifiers Application Note S012 Introduction The INA series amplifiers are part of Hewlett-Packard’s product line of silicon bipolar RF Integrated Circuits built with HP’s ISOlated Self Aligned Transistor ISOSAT process. These devices are 50 ohm
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INA-02:
INA-03:
INA-10:
AN-S011:
5965-8670E
ina series
Signal Path Designer
AN-S003
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INA-03170
Abstract: INA-01170 INA-02170 INA-03 6679 az ina series AN-S003 INA-10386 mmic ina INA-01
Text: INA Series RFIC Amplifiers Application Note S012 Introduction The INA series amplifiers are part of Hewlett-Packard’s product line of silicon bipolar RF Integrated Circuits built with HP’s ISOlated Self Aligned Transistor ISOSAT process. These devices are 50 ohm
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INA-02170.
INA-01170,
INA-03170,
INA-10386.
AN-S011:
INA-03170
INA-01170
INA-02170
INA-03
6679 az
ina series
AN-S003
INA-10386
mmic ina
INA-01
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Tekelec Temex
Abstract: Tekelec HP 8753 Tekelec diode WILTRON HP83620A
Text: RF & MICROWAVE MODULES Introduction Introduction TEKELEC TEMEX designs, develops and manufactures standard and custom IF, RF and microwave modules for military and professional applications. TEKELEC TEMEX has the engineering ressources and production capacity of a large company, as well as the flexibility to rapidly deliver small quantities
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3620A
8510B
8515S
Tekelec Temex
Tekelec
HP 8753
Tekelec diode
WILTRON
HP83620A
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construction of varactor diode
Abstract: voltage controlled oscillator circuit with op amp oscillator circuit diagram in modulation techniques VT0-8060 motorola varactor varactor diode datasheet VTO-9000 varactor high power motorola rf book testing of varactor diode
Text: Voltage Controlled Oscillators The Hyperabrubt Varactor A hyperabrupt varactor diode differs from the conventional or abrupt varactor used in microwave oscillators in that the concentration of the N-type material in the depletion region is made non-uniform through
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VTO-9000
construction of varactor diode
voltage controlled oscillator circuit with op amp
oscillator circuit diagram in modulation techniques
VT0-8060
motorola varactor
varactor diode datasheet
VTO-9000
varactor high power
motorola rf book
testing of varactor diode
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Untitled
Abstract: No abstract text available
Text: H Avantek Products Threshold Detector 10 to 2000 MHz Technical Data UTD-2002 Features Description Pin Configuration • Externally Set Threshold The UTD-2002 is a sensitive microwave threshold detector which provides efficient and accurate RF level measurement at
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UTD-2002
UTD-2002
5963-3249E
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Untitled
Abstract: No abstract text available
Text: APSIN20G Specification 2.0 July 2014 Portable 20 GHz Microwave Signal Generator with Options HP, PE3, NM 1 Introduction The APSIN20G is a low-noise and fast-switching microwave signal generator covering a continuous frequency range from as low as 100 kHz up to 20.5 GHz with a 0.001 Hz
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APSIN20G
APSIN20G-NM
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33322H
Abstract: 33322G HP programmable attenuator 33321H 33320H hp 33322g 33320G 33323K 33321G HP DC POWER CONNECTOR
Text: PDFINFO H5 5 9 8 - 0 1 Microwave Switch/Step Attenuator Driver HP E1370A Technical Specifications ● ● ● ● ● Switching and attenuation up to 26.5 GHz Drive any HP 8766K/67K/68K/69K microwave switch Drive any HP 3332XG prog. step attenuator Programmable 1 or 10 dB steps up to 110 dB
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E1370A
8766K/67K/68K/69K
3332XG
E1370A
33320G/H,
33321G/H,
333iption
8766K*
8767K*
33322H
33322G
HP programmable attenuator
33321H
33320H
hp 33322g
33320G
33323K
33321G
HP DC POWER CONNECTOR
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E1368A
Abstract: E1369 E1370A
Text: PDFINFO H5 5 9 6 - 0 1 18 GHz Microwave Switch 3 channels HP E1368A Technical Specifications ● ● ● ● ● Signal switching from dc to 18 GHz Three internal SPDT 50 Ω terminated switches Two additional external switches allowed High isolation >90 dB provided
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E1368A
E1368A
8762B
95/NT
11764D
5965-5596E
E1368A/E1369A/E1370A
E1369
E1370A
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HP 5082-3081
Abstract: HSMP-3814 avago 5188 hsmp3814 HSMP-386x Series KYOCERA RESISTOR NETWORKS mcr10ezhj222 "Common rail" HSMP-38 sot-323 CR21
Text: A Low-Cost Surface Mount PIN Diode π Attenuator Application Note 1048 Introduction Background Analog attenuators find wide application in RF and microwave networks. Realized as either GaAs MMICs or PIN diode networks, these circuits are used to set the power level of an RF signal from a voltage control. In
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5966-0449E
HP 5082-3081
HSMP-3814
avago 5188
hsmp3814
HSMP-386x Series
KYOCERA RESISTOR NETWORKS
mcr10ezhj222
"Common rail"
HSMP-38 sot-323
CR21
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33311B
Abstract: Dynatech Microwave Tech 8762B 33312B 33311C 8762B-011
Text: PDFINFO H5 5 9 7 - 0 1 Microwave Switch Driver HP E1369A Technical Specifications ● ● ● ● ● Signal switching from dc to 26.5 GHz Drive three internal 50 Ω terminated switches Drive two additional external switches Select internal or use external energizing
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E1369A
E1369A
8762B/C,
8763B/C,
8764B/C
14pin
E1368A/E1369A/1370A
5965-5597E
33311B
Dynatech Microwave Tech
8762B
33312B
33311C
8762B-011
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Avantek yig
Abstract: yig oscillator hp AVANTEK YIG tuned oscillator AVANTEK, yig yig oscillator avantek avantek yig oscillator avantek YTO HP yig oscillator YIG Bandpass Filters yig band filter
Text: Glossary Terms and Definitions Cascade Aluminum Oxide, Al203 — Alumina ceramic is used as the substrate material on which is deposited thin conductive and resistive layers for thinfilm microwave integrated circuits. A series of microwave amplifier stages connected
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Al203)
Avantek yig
yig oscillator hp
AVANTEK YIG tuned oscillator
AVANTEK, yig
yig oscillator avantek
avantek yig oscillator
avantek YTO
HP yig oscillator
YIG Bandpass Filters
yig band filter
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Triangle Microwave
Abstract: No abstract text available
Text: APSIN12G Specification 1.03 March 14 Portable 12 GHz Microwave Signal Generator 1 Introduction The APSIN12G is a low-noise and fast-switching microwave signal generator covering a frequency range from 100 kHz up to 12 GHz. The APSIN12G a wide and accurately levelled output power range and high spurious
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APSIN12G
IEEE-488
Triangle Microwave
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reflectometer
Abstract: F 6256 ap 4502 HP 4502 w-band 77 GHZ Rf Detectors v-band MIL-F-3922/52-034
Text: 6250.qxd 07/Dec/2004 10:08 Page 1 Microwave 6250 Series Millimieter Wave Reflectometer s The 6250 series adds millimetric wave measurement capability to a standard 6200B series MTS • Accurate Return Loss and Insertion Loss measurements to 110 GHz • Compatible with standard 6200B, 6203B
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07/Dec/2004
6200B
6200B,
6203B
6204B
reflectometer
F 6256
ap 4502
HP 4502
w-band
77 GHZ Rf Detectors
v-band
MIL-F-3922/52-034
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transistor rf type M 2530
Abstract: signal path designer INA02170
Text: f T J I H EW LETT 1WM P A C K A R D INA Series RFIC Amplifiers Application Note S012 Introduction The INA series amplifiers are part of Hewlett-Packard’s product line of silicon bipolar RF Integrated Circuits built with HP’s ISOlated Self Aligned Transistor ISOSAT process.
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INA-02:
INA-03:
AN-S011:
transistor rf type M 2530
signal path designer
INA02170
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diode A14B
Abstract: No abstract text available
Text: W fio l H E W L E T T mÜKM P A C K A R D HP 71708A M icrow ave Source HP 70428A M icrow ave Source M odule Technical Data Variable frequency source w ith lowest phase noise i’ourtosy of McDonnell Douglas The HP 71708A microwave source provides signals with
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1708A
0428A
1708A
diode A14B
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33144A
Abstract: 33190B HP 33144A HP 33134a 33140 33142A MIL-STD-883 METHOD 1009 MIL-E-5400R 33144A hp
Text: W hß%HEWLETT mL/ÍM P A C KA RD Fast Microwave SPST Switches and Attenuators DC-18 GHz Technical Data Features • 5 ns Sw itching • TTL Com patible D river • H erm etic • Low In sertio n Loss • H igh Isolation • Low B ias C u rren t Description
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DC-18
33190B
3142A
3144A
3132A
3134A
MILSTD-883,
MIL-STD-883,
MIL-E-5400R
33144A
HP 33144A
HP 33134a
33140
33142A
MIL-STD-883 METHOD 1009
33144A hp
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Untitled
Abstract: No abstract text available
Text: MwT-13 18GHz HIGH POWER GaAs MESFETCHIP MicroWave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES • +27 dBm P-1 dB AT 12 GHz • 7 dB GAIN AT 12 GHz • HIGH THIRD ORDER INTERCEPT • IDEAL FOR BALANCED AMPLIFIER CIRCUITS
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MwT-13
18GHz
MwT-13
at125
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Untitled
Abstract: No abstract text available
Text: MI CR O W A V E TECHNOLOGY bfc,E D • b l 2 4 1 0 0 0 0 0 0 3 0 4 1T3 « N R W V MwT-13 18GHz HIGH POWER GaAs MESFETCHIP MicroWave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES l- 1 • +27 dBm P-1 dB AT 12 GHz
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MwT-13
18GHz
MwT-13
at125
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MWT1171HP
Abstract: 1171H
Text: M e M wT -11 16 GHz HIGH POWER GaAs FET ? MicroWave Technology 4268 Solar way Fremont, 94538 510-651-670q f a x s io -651-22Q8 FEATURES »-751 t-73-l ca • 1 WATT POWER OUTPUT AT 12 GHZ • HIGH ASSOCIATED GAIN 343 • 0.3 MICRON REFRACTORY METAL/GOLD GATE
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t-73-l
510-651-670q
-651-22Q8
MwT-11
MwT-11
-F90-
MWT1171HP
1171H
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Untitled
Abstract: No abstract text available
Text: MICROWAVE TECHNOLOGY bbE usvt I- r m blEMlOQ 00D023A LTS • PIRUV w T - 3 26 GHz High Power GaAs FET 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES r —7Pr l «* ■ M MicroWave Technology t » • +21 DBM OUTPUT POWER AT 12 GHZ
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00D023Ã
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marking I2 SOT23-5
Abstract: No abstract text available
Text: Thaï mLUMHP AECWKLAERTDT Surface Mount Microwave Schottky Detector Diodes Technical Data HSMS-2850 Series HSMS-2860 Series Features • Surface Mount SOT-23/ SOT-143 Package • High Detection Sensitivity: up to 50 mV/|iW at 915 MHz up to 35 mV/jiW at 2.45 GHz
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HSMS-2850
HSMS-2860
OT-23/
OT-143
HSMS-2860
OT-23
5966-0928E
5966-2939E
marking I2 SOT23-5
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MWT1171HP
Abstract: No abstract text available
Text: MICROWAVE TECHNOLOGY bbE D • blEMlQG ÜDDDS^b ET7 ■ PIRIdV MwT-11 16 GHz HIGH POWER GaAs FET MicroWave Technology 1-751 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES 1-731 1 WATT POWER OUTPUT AT 12 GHZ HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY M ETAL/GOLD
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MwT-11
MwT-11
MWT1171HP
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marking DIODE 2U 04
Abstract: 386b
Text: fhlï milita HEWLETT PACKARD Surface Mount PIN Diodes in SOT-323 SC-70 3-Lead Technical Data Features • Diodes Optimized for: Low Current Switching Low Distortion Attenuating Ultra-Low Distortion Switching Microwave Frequency Operation • Surface Mount SOT-323
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OT-323
SC-70
HSMP-381B/C/E/F
HSMP-386B/C/E/F
HSMP-389B/C/E/F
HSMP-481B,
-482B,
-489B
marking DIODE 2U 04
386b
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