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    HN3C16FU Search Results

    HN3C16FU Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HN3C16FU Unknown NPN Transistor Scan PDF
    HN3C16FU Toshiba Transistor Silicon NPN Epitaxial Planar Type Scan PDF
    HN3C16FU Toshiba NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) Scan PDF

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    HN3C16FU

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE HN3C16FU TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C16FU Unit in mm V H F -U H F B A N D LO W NOISE AMPLIFIER APPLICATIONS • 2.1 ± 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)


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    HN3C16FU

    Abstract: No abstract text available
    Text: T O S H IB A TENTATIVE HN3C16FU T O SH IBA TRANSISTO R SILICON NPN EPITAXIAL PLAN AR TYPE HN3C16FU Unit in mm V H F -U H F B A N D LO W NOISE AM PLIFIER APPLICATIO NS • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads 2.1 ± 0.1 M A X IM U M RATINGS (Ta = 25°C)


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    HN3C16FU

    Abstract: No abstract text available
    Text: TO SH IBA HN3C16FU TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE HN3C16FU VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 2.1 i 0.1 • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C)


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    HN3C16

    Abstract: No abstract text available
    Text: HN3C16FU TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C16FU VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) SYMBOL VCBO v CEO CHARACTERISTIC


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    Untitled

    Abstract: No abstract text available
    Text: HN3C16FU TOSHIBA TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE HN3C16FU VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • U nit in mm 2-1 + 0.1 Including Two Devices in US6 U ltra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C)


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    TOSHIBA FL

    Abstract: No abstract text available
    Text: TOSHIBA HN3C16FU TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE HN3C16FU Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads 2.1 ± 0.1 MAXIMUM RATINGS (Ta = 25°C)


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    PDF HN3C16FU TOSHIBA FL