2SK3075 equivalent
Abstract: 10 ghz transistor 2SK3078 MT3S04T 2SC5066 MT6P03AE MT6P06E 3SK320 24lu1 transistor 2SC5066
Text: High-Frequency Devices for Mobile Communications PRODUCT GUIDE 800 MHz Band Analog and Digital Cellular High-Frequency Block Diagram Ant. RF Amp Mixer RX IF detection Prescaler VCO 1 900 MHz Buff Amp Buff Amp OSC (1) Tuning DUP Prescaler Buff Amp VCO (2) 100 MHz
|
Original
|
PDF
|
2SC5065
2SC5085
2SC5090
2SC5095
MT3S06U
MT3S07U
2SC5066
2SC5086
2SC5091
2SC5096
2SK3075 equivalent
10 ghz transistor
2SK3078
MT3S04T
2SC5066
MT6P03AE
MT6P06E
3SK320
24lu1
transistor 2SC5066
|
Untitled
Abstract: No abstract text available
Text: T O SH IB A TENTATIVE HN2C10FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 7 f 1 n FT • ■ m 'm ■ ■ Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS 2.1 ±0.1 • TWO devices are built in to the super-thin and ultra super
|
OCR Scan
|
PDF
|
HN2C10FT
2SC5086
--20mA
500MHz
|
2SC5086
Abstract: HN2C10FT
Text: TO SH IBA TENTATIVE HN2C10FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 2 C 1 0 FT Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • 2.1 ± 0.1 TWO devices are built in to the super-thin and ultra super mini 6 pins package : TU6
|
OCR Scan
|
PDF
|
HN2C10FT
2SC5086
2SC5086
HN2C10FT
|
2SC5086
Abstract: HN2C10FT C2PP
Text: TOSHIBA TENTATIVE HN2C10FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N2C1OFT Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6 MOUNTED DEVICES Q1/Q2
|
OCR Scan
|
PDF
|
HN2C10FT
2SC5086
500MHz
2SC5086
HN2C10FT
C2PP
|
2SC5086
Abstract: HN2C10FT
Text: TO SH IBA TENTATIVE HN2C10FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 2 C 1 0 FT Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • 2.1 ± 0.1 Two devices are built in to the super-thin and ultra super mini 6 pins package : TU6
|
OCR Scan
|
PDF
|
HN2C10FT
2SC5086
|
Untitled
Abstract: No abstract text available
Text: TO SHIBA TENTATIVE HN2C10FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N2C1OFT Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • 2.1 ± 0.1 TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6
|
OCR Scan
|
PDF
|
HN2C10FT
2SC5086
500MHz
|
Untitled
Abstract: No abstract text available
Text: TO SH IBA TENTATIVE HN2C10FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N2C1OFT Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini 6 pins package : TU6 2.1 ± 0.1
|
OCR Scan
|
PDF
|
HN2C10FT
2SC5086
|