HN1V01H Search Results

HN1V01H Datasheets (3)

Part	Manufacturer	Description	Datasheet Type	PDF
HN1V01H	Toshiba	Variable Capacitance Diode, AM Radio Band Tuning Applications	Original	PDF
HN1V01H	Unknown	High Frequency Device Data Book (Japanese)	Scan	PDF
HN1V01H	Toshiba	Common Cathode Diode Array	Scan	PDF

HN1V01H Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
isv149 Abstract: ISV101 iss314 ISV262 ISV172 1SS242 ISV103 ISV255 1SS239 ISV229 Text: V a ria b le C a p a c ita n c e D iode F5 Type No. Package Type No. ISV101 - ISV102 - ISV103 Package - ISV225 MINI SUPER MINI ISV147 ISV228 ISV149 HN1V01H, HN1V02H, HN2V02H Package Type No. FM8 Type No. Package Type No. Vr Ct V (pF) Ct V r(V) (pF) Application	OCR Scan	ISV101 ISV102 ISV103 ISV147 ISV149 ISV225 ISV228 HN1V01H, HN1V02H, HN2V02H iss314 ISV262 ISV172 1SS242 ISV255 1SS239 ISV229	PDF
HN1V01H Abstract: No abstract text available Text: HN1V01H TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type HN1V01H AM Radio Band Tuning Applications Unit: mm • High capacitance ratio: C1 V/C8 V = 19.5 typ. • High Q: Q = 200 (min) • Including four devices in FM8 package (flat pack mini 8 pin)	Original	HN1V01H HN1V01H	PDF
Untitled Abstract: No abstract text available Text: HN1V01H TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type HN1V01H AM Radio Band Tuning Applications Unit: mm • High capacitance ratio: C1 V/C8 V = 19.5 typ. • High Q: Q = 200 (min) • Including four devices in FM8 package (flat pack mini 8 pin)	Original	HN1V01H	PDF
Untitled Abstract: No abstract text available Text: HN1V01H TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE HN1V 0 1 H Unit in mm AM RADIO BAND TUNING APPLICATIONS 0.3 4.5 - 0.2 “ “ High Capacitance Ratio : CIV /C8V= 19.5(Typ. High Q : Q = 200 (Min.) Including Four Devices in FM8 Package (Flat Pack Mini 8Pin)	OCR Scan	HN1V01H	PDF
HN1V01H Abstract: No abstract text available Text: HN1V01H TO SH IBA TOSHIBA TRANSISTOR SILICON EPITAXIAL PLANAR TYPE HN1V01H Unit in mm AM RADIO BAND TUNING APPLICATIONS. “ “0.3 4.5 - 0.2 MAXIMUM RATINGS (Ta = 25°C (D1# D2, D3, D4) CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range	OCR Scan	HN1V01H HN1V01H	PDF
HN1V01H Abstract: No abstract text available Text: HN1V01H TOSHIBA TOSHIBA TRANSISTOR SILICON EPITAXIAL PLANAR TYPE HN 1V 01H Unit in mm AM RADIO BAND TUNING APPLICATIONS. + 0.3 4.5 - 0.2 High Capacitance Ratio :CIV /C8V = 19.5 Typ. High Q :Q = 200 (Min.) Including Four Devices in FM8 Package (Flat Pack Mini 8Pin)	OCR Scan	HN1V01H HN1V01H	PDF
Untitled Abstract: No abstract text available Text: HN1V01H T O SH IB A TOSHIBA TRANSISTOR SILICON EPITAXIAL PLANAR TYPE HN1V 0 1 H Unit in mm AM RADIO BAND TUNING APPLICATIONS. . • • • High Capacitance Ratio : C IV / C8V = 19.5 Typ. High Q : Q = 200 (Min.) Including Four Devices in FM8 Package (Flat Pack Mini 8Pin)	OCR Scan	HN1V01H	PDF
Untitled Abstract: No abstract text available Text: SILICON EPITAXIAL PLANAR TYPE TRANSISTOR HN1V01H A M R A D IO B A N D T U N IN G A PPLIC A TIO N S. U n i t in m m + 0 .3 4 5 -0 2 3 .] H i g h C a p a c it a n c e R a tio : C I V / C 8 V = 19.5 Typ. — E3 : Q = 200 (Min.) 1 — IMM OO + 1 • I n c lu d i n g F o u r Devices in F M 8 P a c k a g e ( F l a t P a c k M ini 8Pin)	OCR Scan	HN1V01H	PDF
HN1V01H Abstract: No abstract text available Text: HN1V01H TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type HN1V01H AM Radio Band Tuning Applications Unit: mm • High capacitance ratio: C1 V/C8 V = 19.5 typ. · High Q: Q = 200 (min) · Including four devices in FM8 package (flat pack mini 8 pin)	Original	HN1V01H HN1V01H	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA HN1V01H SILICON EPITAXIAL PLANAR TYPE HN1V 01 H Unit in mm A M RADIO BAND TUNING APPLICATIONS. • • • • High Capacitance Ratio :CIV /C8V = 19.5 Typ. High Q : Q = 200 (Min.) Including Four Devicesin FM8 Package (Flat Pack Mini 8Pin) Low Voltage Operation :	OCR Scan	HN1V01H	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA HN1V01H TOSHIBA TRANSISTOR SILICON EPITAXIAL PLANAR TYPE HN1VÌÌ1H A M RADIO BAND TUNING APPLICATIONS. U n it in mm • H igh C apacitance Ratio : C IV /C 8 V = 19.5 Typ. • H igh Q • In clu d in g F our Devices in FM 8 Package (F lat • Low V oltage O peration	OCR Scan	HN1V01H	PDF
38AN Abstract: No abstract text available Text: HN1V01H TOSHIBA TOSHIBA TRANSISTOR SILICON EPITAXIAL PLANAR TYPE HN1V 0 1 H Unit in mm AM RADIO BAND TUNING APPLICATIONS. High Capacitance Ratio : C1V/C8V= 19.5 Typ. High Q : Q = 200 (Min.) Including Four Devices in FM8 Package (Flat Pack Mini 8Pin) Low Voltage Operation : V r = 1~8V	OCR Scan	HN1V01H 38AN	PDF
marking AJ Abstract: marking AJ 7 1V01H Text: SILICON EPITAXIAL PLANAR TYPE HN1V01H Unit in mm AM RADIO BAND TUNING APPLICATIONS . High Capacitance Ratio : C1V/C8V=19,5 Typ. . High Q : Q=200(Min.) . Including Four Devices in F118 Package (Flat Pack Mini 8 Pin) . Low Voltage Operation M A X I M U M RATINGS (Ta=25°C)	OCR Scan	HN1V01H 1V01H marking AJ marking AJ 7	PDF
2N3904 331 transistor Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737 Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 2SC1815(L) — 2SC2995 — * 2N3904 — 2SA1245 167 2SC1923 — 2SC2996 266 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272	OCR Scan	2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737	PDF

TOSHIBA RF Power Module S-AV24 Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192 Text: 高周波用半導体デバイスダイオード編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動したり故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製	Original	050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 TOSHIBA RF Power Module S-AV24 diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192	PDF
3SK73 Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112 Text: 高周波用半導体デバイスパワーデバイス編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動したり故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製	Original	050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 3SK73 S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112	PDF
2fu smd transistor Abstract: 2FK transistor 3FV 60 43 smd diode Lz zener HN2S02JE CMZ24 CRS01 DF2S6.2S 1SV101 1SV283B Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 256 Zener Diodes z 257 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A	Original	TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG02 O-220SM CRG01 CRG04 CMG03 2fu smd transistor 2FK transistor 3FV 60 43 smd diode Lz zener HN2S02JE CMZ24 CRS01 DF2S6.2S 1SV101 1SV283B	PDF
k192a Abstract: c2458 C2498 C2668 C2717 C1923 Y C2499 k710 K241 C2995 Text: ALPHANUMERICAL INDEX Type No. Marking Page Type No. Marking 1SS154 BA 105 1SV217 T6 175 1SS239 SI 107 1SV224 T7 177 1SS241 TY 109 1SV225 V3 179 1SS242 S2 111 1SV226 TA 181 1SS268 BF 113 1SV227 T9 183 1SS269 BG 115 1SV228 V4 185 1SS271 BD 117 1SV229 T8 188	OCR Scan	1SS154 1SS239 1SS241 1SS242 1SS268 1SS269 1SS271 1SS295 1SS312 1SS313 k192a c2458 C2498 C2668 C2717 C1923 Y C2499 k710 K241 C2995	PDF
3120 tuner Abstract: C5086 1SS242 1SV226 1SV204 2sc low noise C1923 1SS241 mos cascode 2SA1161 Text: [I] PRODUCT OUTLINE & EXPLANATION 1. SELECTION GUIDE PACKAGE TYPES & APPLICATION 1.1 TRANSISTORS FOR TV TUNER Package Style TO -92 A PPLICATIO N ♦ Super-Mini Super-Mini Quad (SO T-23 M O D ./ (S O T -143 M O D .) T O -23 6 M O D . ) * * % % " • UHF M IX	OCR Scan	3SK240 3SK283 3SK127 3SK146 3SK199 3SK207 3SK232 2SC3828 2SC4214 3SK284 3120 tuner C5086 1SS242 1SV226 1SV204 2sc low noise C1923 1SS241 mos cascode 2SA1161	PDF
BB 505 Varicap Diode Abstract: s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114 Text: Radio-Frequency Semiconductors Diodes Semiconductor Company The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent	Original	3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 S-AV26H BB 505 Varicap Diode s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114	PDF
FET K161 Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR Text: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or	Original	3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 S-AV26H FET K161 S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR	PDF
FET K161 Abstract: Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923 Text: 高周波用半導体デバイストランジスタ・FET・セルパック編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動したり故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製	Original	050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 FET K161 Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923	PDF
2sc5088 horizontal transistors Abstract: S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509 Text: High-Frequency Semiconductors Power Devices Semiconductor Company The information contained herein is subject to change without notice. 021023_D The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or	Original	3SK114 3SK126 S1255 2SC2644 2-AV24 3SK115 3SK291 S1256 2-AV26H 2sc5088 horizontal transistors S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509	PDF

HN1V01H Search Results

HN1V01H Datasheets (3)

HN1V01H Datasheets Context Search

isv149

HN1V01H

Untitled

Untitled

HN1V01H

HN1V01H

Untitled

Untitled

HN1V01H

Untitled

Untitled

38AN

marking AJ

2N3904 331 transistor

TOSHIBA RF Power Module S-AV24

3SK73

2fu smd transistor

k192a

3120 tuner

BB 505 Varicap Diode

FET K161

FET K161

2sc5088 horizontal transistors