Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    HN1K02FU Search Results

    SF Impression Pixel

    HN1K02FU Price and Stock

    Toshiba America Electronic Components HN1K02FU-T5LT

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics HN1K02FU-T5LT 6,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Toshiba America Electronic Components HN1K02FU-TE85L

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics HN1K02FU-TE85L 3,000 9
    • 1 -
    • 10 $0.6
    • 100 $0.3
    • 1000 $0.12
    • 10000 $0.09
    		Buy Now
    Quest Components HN1K02FU-TE85L 2,400
    • 1 $0.8
    • 10 $0.8
    • 100 $0.24
    • 1000 $0.16
    • 10000 $0.16
    		Buy Now

    Toshiba America Electronic Components HN1K02FUTE85L

    SILICON N CHANNEL MOS TYPE FIELD EFFECT TRANSISTOR Small Signal Field-Effect Transistor
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA HN1K02FUTE85L 20,395
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    HN1K02FU Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    HN1K02FU Toshiba dual N channel MosFet Original PDF
    HN1K02FU Toshiba Small-Signal MOS FETs (Dual); Surface Mount Type: Y; Package: US6; XJE016 JEITA: SC-88; Number of Pins: 6; Internal connection: Independent; V_DS(Q1), max (V): (max 20); V_GSS(Q1), max (V): (max 10); I_D Q1, max (mA): (max 50) Original PDF
    HN1K02FU Toshiba N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH APPLICATIONS) Scan PDF

    HN1K02FU Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HN1K02FU

    Abstract: No abstract text available
    Text: HN1K02FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K02FU High Speed Switching Applications Analog Switch Applications Unit in mm z 2.5 V gate drive. z Low threshold voltage: Vth = 0.5V~1.5V z High speed z Enhancement-mode z Small package


    Original     		PDF HN1K02FU HN1K02FU

    Untitled

    Abstract: No abstract text available
    Text: HN1K02FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K02FU High Speed Switching Applications Analog Switch Applications Unit: mm z 2.5 V gate drive. z Low threshold voltage: Vth = 0.5V to 1.5V z High speed z Enhancement-mode z Small package


    Original     		PDF HN1K02FU

    Untitled

    Abstract: No abstract text available
    Text: HN1K02FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K02FU High Speed Switching Applications Analog Switch Applications Unit in mm 2.5 V gate drive. Low threshold voltage: Vth = 0.5V~1.5V High speed Enhancement-mode Small package Maximum Ratings Ta = 25°°C (Q1, Q2 Common)


    Original     		PDF HN1K02FU 000707EAA1

    HN1K02FU

    Abstract: No abstract text available
    Text: HN1K02FU 東芝電界効果トランジスタ シリコンNチャネルMOS形 HN1K02FU ○ 高速スイッチング用 ○ アナログスイッチング用 単位: mm z 入力インピーダンスが高く駆動電流が極めて小さい。 z Vth が低く、低電圧での CMOS などからの直接駆動が可能。


    Original     		PDF HN1K02FU HN1K02FU

    Untitled

    Abstract: No abstract text available
    Text: HN1K02FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K02FU High Speed Switching Applications Analog Switch Applications Unit in mm 2.5 V gate drive. Low threshold voltage: Vth = 0.5V~1.5V High speed Enhancement-mode Small package Maximum Ratings Ta = 25°C (Q1, Q2 Common)


    Original     		PDF HN1K02FU

    HN1K02FU

    Abstract: No abstract text available
    Text: HN1K02FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K02FU High Speed Switching Applications Analog Switch Applications Unit in mm l 2.5 V gate drive. l Low threshold voltage: Vth = 0.5V~1.5V l High speed l Enhancement-mode l Small package


    Original     		PDF HN1K02FU 000707EAA1 HN1K02FU

    Untitled

    Abstract: No abstract text available
    Text: HN1K02FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K02FU High Speed Switching Applications Analog Switch Applications Unit in mm 2.5 V gate drive. Low threshold voltage: Vth = 0.5V~1.5V High speed Enhancement-mode Small package Absolute Maximum Ratings Ta = 25°C


    Original     		PDF HN1K02FU

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


    Original     		PDF BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


    Original     		PDF 200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R

    SSM3K7002

    Abstract: ESM 310 SSM3J16FU SSM3K03TE zener diode reference guide SSM5N03FE US6 KEC SSM5G01TU 6798 SSM3J13T
    Text: S-MOS Series Small-Signal MOSFETs for Switching PRODUCT GUIDE S -MOS Family S-MOS Family Toshiba presents a range of small-signal MOSFET S-MOS devices which have been developed for various switching, interface and DC/DC converter applications. These MOSFETs have been classified into families according to application,


    Original     		PDF 3402C-0209 SSM3K7002 ESM 310 SSM3J16FU SSM3K03TE zener diode reference guide SSM5N03FE US6 KEC SSM5G01TU 6798 SSM3J13T

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		PDF SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126

    2SK4207

    Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


    Original     		PDF BCJ0082B BCJ0082A 2SK4207 to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03

    TOSHIBA MG150N2YS40

    Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
    Text: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入


    Original     		PDF 050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40

    8aa1

    Abstract: esm 310 2SK982 733 SSOP10 kef q1 datasheet SSM3J13T SSM3K03TE 2SJ148 2SJ167 2SJ168
    Text: 小型面実装MOS FET S-MOSシリーズ ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製


    Original     		PDF 050106DAA1 12341D3AG BDJ0099A 8aa1 esm 310 2SK982 733 SSOP10 kef q1 datasheet SSM3J13T SSM3K03TE 2SJ148 2SJ167 2SJ168

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    TK12A10K3

    Abstract: tk12a10k TK33A60V TPCA*8065 TK40E10K3 SSM6K407TU TPCA*8064 tk6a65d equivalent TPCA*8036 TK100G10N1
    Text: Semiconductor Catalog 2012-3 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 4


    Original     		PDF

    tpc8118 equivalent replacement

    Abstract: SSM3J307T Zener diode smd 071 A01
    Text: 2009-9 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF BCE0082A tpc8118 equivalent replacement SSM3J307T Zener diode smd 071 A01

    TK12A10K3

    Abstract: tk25e06k3 TK50E06K3A tk20e60u TPCA*8065 TJ11A10M3 SSM6J501NU TPCA8077 TJ9A10M3 TK8A10K3
    Text: 製品カタログ 2010-9 東芝半導体 製品カタログ MOSFET S SE EM M II C CO ON ND DU UC C TT O OR R h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


    Original     		PDF BCJ0082D BCJ0082C TK12A10K3 tk25e06k3 TK50E06K3A tk20e60u TPCA*8065 TJ11A10M3 SSM6J501NU TPCA8077 TJ9A10M3 TK8A10K3

    TPCA*8030

    Abstract: lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ 汎用小信号面実装対応素子 （トランジスタダイオード、セルパック） SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S


    Original     		PDF TC7SZ126FU SC-88A OT-353 BCJ0052E BCJ0052D TPCA*8030 lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558

    HN4C06J

    Abstract: te85l F 1SS302 2SC4117 SUFFIX TE85L Toshiba 2SK2145 HN1B04FE rn4983 US6 KEC RN1306
    Text: Small-Signal Multi-Chip Discrete Devices Transistors and Diodes PRODUCT GUIDE Contents What Is a Multi-Chip Discrete Device? • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • 2


    Original     		PDF

    HN1K02FU

    Abstract: N1K02FU
    Text: HN1K02FU TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE H N 1 K02FU HIGH SPEED SW ITCHING APPLICATIONS A NALO G SWITCH APPLICATIONS 2.5 Volts Gate Drive. Low Threshold Voltage : Vth = 0.5~1.5V High Speed Enhancement-Mode Small Package M A X IM U M RATINGS Ta = 2 5 °C (Q 1 , Q 2 C O M M O N )


    OCR Scan     		PDF HN1K02FU N1K02FU 961001EAA2 10//S HN1K02FU N1K02FU

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN1K02FU TOSHIBA FIELD EFFECT TRANSISTOR HN1 K m m m 'm m • % SILICON N CHANNEL MOS TYPE n? w F II ■ HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS 2.5 Volts Gate Drive. Low Threshold Voltage : V'^ = 0.5~ 1.5V High Speed Enh ancement-Mode


    OCR Scan     		PDF HN1K02FU

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN1K02FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE HN1 K02FU Unit in mm HIGH SPEED SWITCHING APPLICATIONS 2 . 1 ± 0.1 ANALOG SWITCH APPLICATIONS 1. 2 5 + 0.1 *1 e- 2.5 Volts Gate Drive. Low Threshold Voltage : Vth = 0.5~1.5V High Speed


    OCR Scan     		PDF HN1K02FU K02FU 10//S