Contextual Info: SILICON NPN EPITAXIAL T Y P E HN1C03F U n it in mm FOR M U T IN G A N D SW ITCH IN G APPLICATIONS. + 0.2 2 .8 - 0 .3 • Including Two Devices in SM6 Super Mini Type w ith 6 leads • H igh E m itter-B ase Voltage : VEBO = 25V(M in.) • H igh Reverse h p g

HN1C03F

Contextual Info: HN1C03F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C03F For Muting And Switching Applications Unit in mm z Including two devices in SM6 (Super mini type with 6 leads) z High emitter-base voltage: VEBO = 25V (min) z High reverse hFE: reverse hFE = 150 (typ.)(VCE =−2V, IC =−4mA)

HN1C03FU

Contextual Info: HN1C03FU シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ HN1C03FU ○ ミューティング用 ○ スイッチング用 z z z z 単位: mm ウルトラスーパーミニ (6 端子) パッケージに 2 素子を内蔵しています。

HN1C03FU

Contextual Info: HN1C03FU TOSHIBA Transistor Silicon Npn Epitaxial Type PCT Process HN1C03FU Unit: mm For Muting and Switching Applications Including two devices in US6 (ultra super mini type with 6 leads) High emitter-base voltage: VEBO = 25V (min) High reverse hFE: reverse hFE = 150 (typ.)(VCE =−2V, IC =−4mA)

HN1C03F

Contextual Info: HN1C03F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C03F For Muting And Switching Applications Unit in mm l Including two devices in SM6 (Super mini type with 6 leads) l High emitter-base voltage: VEBO = 25V (min) l High reverse hFE: reverse hFE = 150 (typ.)(VCE =−2V, IC =−4mA)

Contextual Info: T O SH IB A HN1C03FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS HN1C03FU Unit in mm FOR MUTING AN D SWITCHING APPLICATIONS. • Including Two Devices in US6 (Ultra Super Mini Type with 6 leads) High Emitter-Base Voltage : V e BO = 25V (Min.)

HN1C03FU

Contextual Info: HN1C03FU TOSHIBA Transistor Silicon Npn Epitaxial Type PCT Process HN1C03FU Unit: mm For Muting and Switching Applications z Including two devices in US6 (ultra super mini type with 6 leads) z High emitter-base voltage: VEBO = 25V (min) z High reverse hFE: reverse hFE = 150 (typ.)(VCE =−2V, IC =−4mA)

HN1C03FU

Contextual Info: HN1C03FU シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ HN1C03FU ○ ミューティング用 ○ スイッチング用 z z z z 単位: mm ウルトラスーパーミニ (6 端子) パッケージに 2 素子を内蔵しています。

Contextual Info: HN1C03F T O SH IB A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS HN1C03F Unit in mm FOR MUTING AND SWITCHING APPLICATIONS. + 0.2 2 .8 - 0 . 3 • Including Two Devices in SM6 (Super Mini Type with 6 leads) • High Emitter-Base Voltage : Ve b O = 25V (Min.)

HN1C03F

Abstract: TOSHIBA 2803
Contextual Info: TOSHIBA HN1C03F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS HN1C03F Unit in mm FOR MUTING AND SWITCHING APPLICATIONS. + 0.2 • • • 2.8-0.3 Including Two Devices in SM6 (Super Mini Type with 6 leads) High Emitter-Base Voltage : VEBO-25V (Min.)

015G

Abstract: HN1C03F
Contextual Info: HN1C03F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C03F For Muting And Switching Applications Unit in mm Including two devices in SM6 (Super mini type with 6 leads) High emitter-base voltage: VEBO = 25V (min) High reverse hFE: reverse hFE = 150 (typ.)(VCE =−2V, IC =−4mA)

HN1C03F

Contextual Info: HN1C03F シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ HN1C03F ○ ミューティング用 ○ スイッチング用 z z z z 単位: mm スーパーミニ (6 端子) パッケージに 2 素子を内蔵しています。 エミッタ・ベース間電圧が大きい。 : VEBO = 25V (最大)

HN1C03F

Contextual Info: HN1C03F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C03F For Muting And Switching Applications Unit in mm z Including two devices in SM6 (Super mini type with 6 leads) z High emitter-base voltage: VEBO = 25V (min) z High reverse hFE: reverse hFE = 150 (typ.)(VCE =−2V, IC =−4mA)

Contextual Info: TOSHIBA HN1C03FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS uH u uN 1m r f l v3 F 1 1 • Unit in mm FOR MUTING AND SWITCHING APPLICATIONS. • Including Two Devices in US6 (Ultra Super Mini Type with. 6 leads) » High Emitter-Base Voltage V m T » / i = 9. * V Í M i n Ì

280AM

Contextual Info: SILICON NPN EPITAXIAL TYPE HN1C03FU U nit in mm FOR M U T IN G A N D SW ITCH IN G APPLICATIONS. • Including Two Devices in US6 Ultra Super Mini Type with • High Emitter-Base Voltage : V g jjo = 25V (Min. • High Reverse hyg : • □ in - Q <£> 1 Ö

HN1C03FU

Contextual Info: HN1C03FU TOSHIBA Transistor Silicon Npn Epitaxial Type PCT Process HN1C03FU Unit: mm For Muting and Switching Applications z Including two devices in US6 (ultra super mini type with 6 leads) z High emitter-base voltage: VEBO = 25V (min) z High reverse hFE: reverse hFE = 150 (typ.)(VCE =−2V, IC =−4mA)

Contextual Info: HN1C03F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C03F For Muting And Switching Applications Unit: mm z Including two devices in SM6 (Super mini type with 6 leads) z High emitter-base voltage: VEBO = 25V (min) z High reverse hFE: reverse hFE = 150 (typ.)(VCE =−2V, IC =−4mA)

Contextual Info: HN1C03FU TOSHIBA Transistor Silicon Npn Epitaxial Type PCT Process HN1C03FU Unit: mm For Muting and Switching Applications z Including two devices in US6 (ultra super mini type with 6 leads) z High emitter-base voltage: VEBO = 25V (min) z High reverse hFE: reverse hFE = 150 (typ.)(VCE =−2V, IC =−4mA)

marking IAY

Abstract: HN1C03FU
Contextual Info: TOSHIBA HN1C03FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS HN1C03FU Unit in mm FOR MUTING AND SWITCHING APPLICATIONS. . ± 0.1 2 1 • • • Low on R e s is ta n c e : R q n 990 Including Two Devices in US6 (Ultra Super Mini Type with 6 leads)

HN1C03FU

Contextual Info: HN1C03FU TOSHIBA Transistor Silicon Npn Epitaxial Type PCT Process HN1C03FU Unit: mm For Muting and Switching Applications l Including two devices in US6 (ultra super mini type with 6 leads) l High emitter-base voltage: VEBO = 25V (min) l High reverse hFE: reverse hFE = 150 (typ.)(VCE =−2V, IC =−4mA)

Contextual Info: HN1C03FU TOSHIBA Transistor Silicon Npn Epitaxial Type PCT Process HN1C03FU Unit: mm For Muting and Switching Applications z Including two devices in US6 (ultra super mini type with 6 leads) z High emitter-base voltage: VEBO = 25V (min) z High reverse hFE: reverse hFE = 150 (typ.)(VCE =−2V, IC =−4mA)

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g