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    HM51256

    Abstract: HM51256P 51256LP 51256c
    Text: HM51256 Series-2 6 2 1 4 4 -w o r d x t -bit C M O S Dynam ic Random A ccess M em o ry •FEATURE • • • 262, 144 word x 1 bit DRAM Double layer Poly-Si/Policide Process, high performance CMOS Power supply voltage: 5V ± 10% • Access time Row access time: 8 5 /1 0 0 /1 2 0 /1 50ns


    OCR Scan     		PDF HM51256 40/45/55/70ns 155/180/210/250ns 50/55/65/80ns 5/220m cycles/32ms -HM51256 HM51256P 51256LP 51256c

    HM51256

    Abstract: HM51256-15 HM51256ZP-8 51256CP-10 HM51256-8 HM51256-12 51256CP-8 51256P-8 51256P-15 M5125
    Text: HM51256 Series 2 6 2 1 4 4 -w o rd X 1 -bit CMOS Dynamic Random Access Memory H M 5 1 2 5 6 P Series •FEATURE • 2 6 2 , 144 w ord x 1 bit D R A M • Plastic 16 pin D IP & 18 pin PLCC • Double layer Poly-Si/Policide Process, high performance CMOS •


    OCR Scan     		PDF HM51256 HM51256-15 HM51256ZP-8 51256CP-10 HM51256-8 HM51256-12 51256CP-8 51256P-8 51256P-15 M5125