c5088 transistor
Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154
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1853IMPATT
c5088 transistor
transistor C3207
TLO84CN
sec c5088
IN5355B
D2817A
C3207 transistor
toshiba f630
TLO81CP
MC74HC533N
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HM1042
Abstract: HM10422
Text: HM10422 2 5 6 - w o r d x 4 - b i t F u lly D e c o d e d R a n d o m A c c e s s M e m o r y The HM 10422 is ECL 10K compatible, 256-word x 4-bit, read write, random access memory developed for high speed systems such as scratch pads and control buffer storages.
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HM10422
HM10422
256-word
cerdip-24
F10422.
HM1042
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HM10422
Abstract: HM10422-7 cerdip24
Text: H M 2 5 6 -w o rd 1 4 2 2 - 7 x 4 - b i t F u lly D e c o d e d R a n d o m A c c e s s M em o ry The HM10422 is ECL 10K compatible, 256-word x 4 -bit, read w ritt, random access memory developed for high speed systems such as scratch pads and control buffer storages.
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HM10422
256-word
cerdip-24
F10422.
HM10422-7
HM10422-7
cerdip24
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Untitled
Abstract: No abstract text available
Text: HM10422-7 2 5 6 - w ord x 4 - b it F u lly D e c o d e d R a n d o m A c c e s s M em o ry The HM 10422 is ECL 10K compatible, 256-word x 4-bit, read write, random access memory developed for high speed systems such as scratch pads and control buffer storages.
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HM10422-7
256-word
HM10422
cerdip-24
F10422.
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HM10422
Abstract: HM1042
Text: HM10422 2 5 6 - w o r d x 4 - b it Fully Decoded Random A c c e ss Memory The H M 10422 is EC L 10K compatible, 256-word x 4-bit, read write, random access memory developed for high speed systems such as scratch pads and control buffer storages. Four active Low Block Select lines are provided to select each block
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HM10422
256-word
cerdip-24
F10422.
HM10422
HM1042
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F1042
Abstract: No abstract text available
Text: HM10422 2 5 6 - w ord x 4 -b it Fully D ecoded R and om A c c e s s M em ory The HM 10422 is E C L 10K compatible, 256-word x 4-bit, read write, random access memory developed for high speed systems such as scratch pads and control buffer storages. Four active Low Block Select lines are provided to select each block
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HM10422
256-word
cerdip-24
F10422.
F1042
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HM10422-7
Abstract: No abstract text available
Text: HM10422-7 2 5 6 - word x 4 - b it Fully D ecoded Random A c c e s s Mem ory The H M 10422 is ECL 10K compatible, 256-word x 4-bit, read write, random access memory developed for high speed systems such as scratch pads and control buffer storages. Four active Low Block Select lines are provided to select each block
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HM10422-7
256-word
cerdip-24
HM10422-7
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HN462532G
Abstract: HN462732G HN4827128G-25 6116ALSP-15 482732AG 6116LP 613128P HM4816AP4 6116ALP-10 HM4816AP-4
Text: \ HITACHI IC MEMORY DATA BOOK 0 HITACHI 1 IN D EX • • • • • • Q U IC K R E F E R E N C E G U ID E TO H IT A C H I IC M EM O R IES . 8 MOS R A M .
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HD10131
Abstract: HD10125 HD10231 HD10116 HD100112 HD10K HD10130 HM10474
Text: CONTENTS • G E N E R A L I N F O R M A T I O N . 4 • Definition of Letter Symbols and Abbreviations.
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WD10K
HD100K
4096-word
HMJQG48G-
16384-word
HM100480F
HD10131
HD10125
HD10231
HD10116
HD100112
HD10K
HD10130
HM10474
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HM6116L
Abstract: HM51256P HN62404P HM65256AP HN27C301G HN613128P hn623257 HM6147 HN27256P HN613128FP
Text: • PACKAGE INFORMATION • Dual-in-line Plastic Unit: mm {inch Scale 1/1 • D P -1 6 B • D P -1 8 19 2 Í0 756) 20 32m a , J L 2 54 - 0 .2 5 C 48 - O f <■ 0 !00 ' 0 0 10> ( o 0 19 ' 0 0 0 4 ) ■J-L 0 l5 ii '"To.OlO-.«» 2 54 * 0 25 □ Í8 • 0
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CG-20
CG-22A
CG-24
CG-28
HM6267CG
HM6287CG
HM6787CG
HM100490CG
HM100422CG,
HM100415CG
HM6116L
HM51256P
HN62404P
HM65256AP
HN27C301G
HN613128P
hn623257
HM6147
HN27256P
HN613128FP
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TCA965 equivalent
Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Text: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated
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DG211.
DG300
DG308
DG211
TCA965 equivalent
ULN2283
capacitor 473j 100n
UAF771
transistor GDV 65A
pbd352303
cm2716
TAA2761
TAA4761
ULN2401
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transistor cross reference
Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
Text: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC
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