65728
Abstract: No abstract text available
Text: HM 65767B MATRA MHS 16 K x 1 High Speed CMOS SRAM Introduction The HM 65767B is a high speed CMOS static RAM organized as 16384x1 bit. It is manufactured using MHS’s high performance CMOS technology. All inputs and outputs of the HM 65767B are TTL compatible and operate from single 5 V supply thus
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65767B
65767B
16384x1
65728
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65728B
Abstract: No abstract text available
Text: HM 65728B MATRA MHS 2K x 8 High Speed CMOS SRAM Description The HM 65728B is a high speed CMOSstatic RAM organized as 2048 × 8 bits. It is manufactured using MHS’s high performance CMOS technology. Access times as fast as 25 ns are available with maximum
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65728B
65728B
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Untitled
Abstract: No abstract text available
Text: HM 65728B MATRA MHS 2K x 8 High Speed CMOS SRAM Description The HM 65728B is a high speed CMOSstatic RAM organized as 2048 × 8 bits. It is manufactured using MHS’s high performance CMOS technology. Access times as fast as 25 ns are available with maximum
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65728B
65728B
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Untitled
Abstract: No abstract text available
Text: T em ic HM 65767B MATRA MHS 16 K X 1 High Speed CMOS SRAM Introduction The HM 65767B is a high speed CMOS static RAM organized as 16384x1 bit. It is manufactured using MHS’s high performance CMOS technology. All inputs and outputs of the HM 65767B are TIL
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65767B
65767B
16384x1
bfl45b
00GS411
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Untitled
Abstract: No abstract text available
Text: Tem ic HM 65728B MATRA MHS 2K X 8 High Speed CMOS SRAM Description The HM 65728B is a high speed CMOSstatic RAM organized as 2048 x 8 bits. It is manufactured using MHS’s high performance CMOS technology. Access times as fast as 25 ns are available with maximum
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65728B
65728B
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Untitled
Abstract: No abstract text available
Text: Tem ic HM 65728B Semi co n du ct o rs 2 K x 8 High Speed CMOS SRAM Short description. Please refer to the full datasheet for detailed technical information. Introduction The HM 65728B is a high speed CMOSstatic RAM organized as 2048 x 8 bits. It is manufactured using
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65728B
65728B
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HM 65767B
Abstract: 300MILS
Text: Tem ic Semiconductors 16 K x 1 High Speed CMOS SRAM HM 65767B Short description. Please refer to the full datasheet available on TEMIC web for detailed technical information. Introduction The HM 65767B is a high speed CMOS static RAM organized as 16384x1 bit. It is manufactured using
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65767B
65767B
16384x1
ss65W
HM 65767B
300MILS
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t 16 k
Abstract: F01011
Text: Tem ic HM 65767B MATRA MHS 16 K X 1 High Speed CMOS SRAM Introduction The HM 65767B is a high speed CMOS static RAM organized as 16384x1 bit. It is manufactured using MHS’s high performance CMOS technology. Access times as fast as 25 ns are available with maximum
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65767B
16384x1
00GS411
t 16 k
F01011
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Untitled
Abstract: No abstract text available
Text: Ml HM 65728B DATA SHEET_ 2 Kx 8 HIGH SPEED CMOS SRAM FEATURES FAST ACCESS TIME COMMERCIAL : 25/35/45/55 ns max MILITARY : 25/35/45/55 ns (max) LOW POWER CONSUMPTION ACTIVE : 550 mW (max) STANDBY: 110 mW (max) 300 AND 600 MILS WIDTH PACKAGE TTL COMPATIBLE INPUTS AND OUTPUTS
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65728B
65728B
65728B/Rev
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Untitled
Abstract: No abstract text available
Text: March 1994 HM 65728B DATA SHEET 2 Kx 8 HIGH SPEED CMOS SRAM FEATURES . FAST ACCESS TIME . COMMERCIAL : 25/35/45/55 ns max MILITARY : 25/35/45/55 ns (max) . LOW POWER CONSUMPTION ACTIVE: 550 mW (max) STANDBY: 110 mW (max) . WIDE TEMPERATURE RANGE : -5 5 °C T O + 125"C
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65728B
65728B
65728B/Rev
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TELIC
Abstract: hm 65728b
Text: HM 65768B BURN-IN SCHEMATICS F4W VW — | 1 F 5 - y \W — 2 20 - VCC F6—v \W — 3 18 —A W — R1- 19 - A W — R1- F 7 -M W — 4 17 —A W — R1- F 8 -A W — 5 16 - A W — R1- F9- t A W - i 6 15 - A W — RHR2-
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F10-AWâ
F11-AWâ
R2-F12
R2-F13
R2-F15
300Qperrow
25KHzÂ
65768B
option50
65787/RSV
TELIC
hm 65728b
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