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    HL6513FM Search Results

    HL6513FM Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    HL6513FM Hitachi Semiconductor Laser Diode, 50mW Power, 662nm Wave Length, 45mA Current Original PDF
    HL6513FM OpNext Visible High Power Laser Diode Original PDF
    HL6513FM98 OpNext Laser Diode, 50mW Power, 662nm Wave Length, 45mA Current Original PDF

    HL6513FM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HL6513FM

    Abstract: Hitachi DSA00126
    Text: HL6513FM Visible High Power Laser Diode for DVD-RAM ADE-208-1466 Z Rev.0 Oct. 2001 Description The HL6513FM is a 0.65 µm band AlGalnP laser diode (LD) with a multi-quantum well (MQW) structure. Its beam divergence (parallel to the junction) has a small variation to the optical output power. The


    Original
    PDF HL6513FM ADE-208-1466 HL6513FM D-85622 D-85619 Hitachi DSA00126

    Untitled

    Abstract: No abstract text available
    Text: HL6513FM ODE-208-043A Z Rev.1 Feb. 01, 2008 Visible High Power Laser Diode Description The HL6513FM is a 0.65 µm band AlGalnP laser diode (LD) with a multi-quantum well (MQW) structure. Its beam divergence (parallel to the junction) has a small variation to the optical output power. It is suitable as light sources for


    Original
    PDF HL6513FM ODE-208-043A HL6513FM HL6513FM: 100ns,

    Untitled

    Abstract: No abstract text available
    Text: HL6513FM ODE-208-043 Z Rev.0 Oct.20, 2006 Visible High Power Laser Diode Description The HL6513FM is a 0.65 µm band AlGalnP laser diode (LD) with a multi-quantum well (MQW) structure. Its beam divergence (parallel to the junction) has a small variation to the optical output power. It is suitable as light sources for


    Original
    PDF HL6513FM HL6513FM ODE-208-043 100ns, HL6513FM:

    HL6513FM

    Abstract: Hitachi DSA0047
    Text: HL6513FM Visible High Power Laser Diode for DVD-RAM ADE-208-1466A Z Rev.1 Jan. 2002 Description The HL6513FM is a 0.65 µm band AlGalnP laser diode (LD) with a multi-quantum well (MQW) structure. Its beam divergence (parallel to the junction) has a small variation to the optical output power. The


    Original
    PDF HL6513FM ADE-208-1466A HL6513FM D-85622 D-85619 Hitachi DSA0047

    3LD2

    Abstract: No abstract text available
    Text: HL6513FM ODE2033-00 M Rev.0 Aug. 01, 2008 Visible High Power Laser Diode Description The HL6513FM is a 0.65 m band AlGalnP laser diode (LD) with a multi-quantum well (MQW) structure. Its beam divergence (parallel to the junction) has a small variation to the optical output power. It is suitable as light sources for


    Original
    PDF HL6513FM HL6513FM ODE2033-00 100ns, HL6513FM: 3LD2

    HL6513FM

    Abstract: No abstract text available
    Text: HL6513FM ODE-208-043 Z Rev.0 Oct.20, 2006 Visible High Power Laser Diode Description The HL6513FM is a 0.65 µm band AlGalnP laser diode (LD) with a multi-quantum well (MQW) structure. Its beam divergence (parallel to the junction) has a small variation to the optical output power. It is suitable as light sources for


    Original
    PDF HL6513FM ODE-208-043 HL6513FM HL6513FM: 100ns,

    HL6513FM

    Abstract: No abstract text available
    Text: HL6513FM ODE-208-043 Z Rev.0 Oct.20, 2006 Visible High Power Laser Diode Description The HL6513FM is a 0.65 µm band AlGalnP laser diode (LD) with a multi-quantum well (MQW) structure. Its beam divergence (parallel to the junction) has a small variation to the optical output power. It is suitable as light sources for


    Original
    PDF HL6513FM ODE-208-043 HL6513FM HL6513FM: 100ns,

    LD5033

    Abstract: opnext HL6366DG opnext l HL8340MG A 785nm HL6545MG 660nm 100mw HL8341MG HL6313G
    Text: Optodevices Opnext Lights It Up Opnext is paving the way to a future of exciting laser developments and ground breaking applications. Our industry heritage, future-focused thinking and deep commitment to research and development help us anticipate and meet


    Original
    PDF OPD-010908 LD5033 opnext HL6366DG opnext l HL8340MG A 785nm HL6545MG 660nm 100mw HL8341MG HL6313G

    lvc16244

    Abstract: BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
    Text: HITACHI ELECTRONIC COMPONENTS DATABOOK 2003 INDEX General Informations Multi Perpose Products Safety Considerations Hitachi Semiconductor Package Databook HITACHI Sales Locations Diodes Microcontroller Microcontroller General Microcontroller Overview List


    Original
    PDF HD49323A HA12134A HA12141N HA12155N HA12163 HA12167F HA12173 HA12179F HA12181F HA12187F lvc16244 BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP

    HL6362MG

    Abstract: HL6355MG hl6344g HL6366DG HL6750MG HL6545MG HL6348MG opnext l HL6354MG HL8341MG
    Text: Oct. 2007 Guide for Red & Infrared Laser Diodes Line up Safety Considerations Be sure to avoid direct exposure of human eyes to high power laser beams emitted from laser diodes. Even though barely visible and /or invisible to the human eye, they can be quite harmful. In particular, avoid looking directly into a laser diode or collimated


    Original
    PDF 2008B D-85622 HL6362MG HL6355MG hl6344g HL6366DG HL6750MG HL6545MG HL6348MG opnext l HL6354MG HL8341MG

    dfb activation energy

    Abstract: "Hitachi Kodaira Semiconductor" EA-DFB 1455B HF8807 1310nm DFB BH LASER HL6348MG opnext l laser diode DVD 100mw HL6336G
    Text: Optodevice Data Book ODE-408-001I Rev.9 Mar. 2003 Opnext Japan, Inc. Safety Considerations Be sure to avoid direct exposure of human eyes to high power laser beams emitted from laser diodes. Even though barely visible and/or invisible to the human eye, they can be quite harmful. In particular, avoid looking directly into a


    Original
    PDF ODE-408-001I HL1570AF HL1569AF dfb activation energy "Hitachi Kodaira Semiconductor" EA-DFB 1455B HF8807 1310nm DFB BH LASER HL6348MG opnext l laser diode DVD 100mw HL6336G