6323 GA
Abstract: transistor NEC D 882 p D413 transistor D2396 transistor d507 D484 transistor D2388 transistor d528 transistor D773 d772 transistor
Text: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES x 2.1 ±0.2 1.25 ±0.1 Low noise figure QUANTITY PART NUMBER PACKING STYLE
|
Original
|
PDF
|
NE34018
NE34018
NE34018-T1
NE34018-T2
6323 GA
transistor NEC D 882 p
D413 transistor
D2396
transistor d507
D484 transistor
D2388
transistor d528
transistor D773
d772 transistor
|
DPG60C300HB
Abstract: IXYS TO-247 DATE CODE DPG60C300PC DPF60C300HB DPG60C300QB ISOPLUS247 calculation of diode snubber DPG80C300 DPG60C300HJ
Text: DPG 60 C 300 HJ advanced V RRM = 300 V I FAV = 2x 30 A t rr = 35 ns HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 DPG 60 C 300 HJ Backside: isolated Features / Advantages: Applications: Package:
|
Original
|
PDF
|
60747and
20080929a
ISOPLUS247
O-247
DPG60C300HB
IXYS TO-247 DATE CODE
DPG60C300PC
DPF60C300HB
DPG60C300QB
ISOPLUS247
calculation of diode snubber
DPG80C300
DPG60C300HJ
|
DPG60C300HJ
Abstract: No abstract text available
Text: DPG 60 C 300 HJ advanced V RRM = 300 V I FAV = 2x 30 A t rr = 35 ns HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 DPG 60 C 300 HJ Backside: isolated Features / Advantages: Applications: Package:
|
Original
|
PDF
|
60747and
ISOPLUS247
O-247
DPG60C300HJ
|
DPG60C300H
Abstract: DPG60C300HB DPG60C300QB ISOPLUS247 TFR 600 DPF60C300HB DPG60C300PC
Text: DPG 60 C 300 HJ V RRM = 300 V I FAV = 2x 30 A t rr = 35 ns HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 DPG 60 C 300 HJ Backside: isolated Features / Advantages: Applications: Package: ● Planar passivated chips
|
Original
|
PDF
|
60747and
20100125a
DPG60C300H
DPG60C300HB
DPG60C300QB
ISOPLUS247
TFR 600
DPF60C300HB
DPG60C300PC
|
1462041-1
Abstract: No abstract text available
Text: THIS DRAWING IS A CONTROLLED DOCUMENT. LOC REVISIONS DIST HJ - P LTR DESCRIPTION A2 A3 A4 1 DWN DATE REVISED PER ECO-11-005150 UR-marking new REVISED PER ECR-13-014508 TE-Logo HMR AK AK RK UKo UKo 25MAR2011 09DEC2011 16SEP2013 APVD 3 + Relay - bottom view
|
Original
|
PDF
|
ECO-11-005150
ECR-13-014508
25MAR2011
09DEC2011
16SEP2013
7168-m
18JUN2008
1462041-1
|
Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS A CONTROLLED DOCUMENT. LOC REVISIONS DIST HJ - P LTR DESCRIPTION A2 A3 A4 1 DWN DATE REVISED PER ECO-11-005150 UR-marking new REVISED PER ECR-13-014508 TE-Logo HMR AK AK RK UKo UKo 25MAR2011 09DEC2011 16SEP2013 APVD 3 + Relay - bottom view
|
Original
|
PDF
|
ECO-11-005150
ECR-13-014508
25MAR2011
09DEC2011
16SEP2013
7168-m
01JUL2008
|
7168-m
Abstract: IM06D IM48I IM03D IMB03C IMC06C IM03P IMF61 IME06 IM42P
Text: THIS DRAWING IS A CONTROLLED DOCUMENT FOR TYCO ELECTRONICS CORPORATION IT IS SUBJECT TO CHANGE AND THE CONTROLLING ENGINEERING ORGANIZATION SHOULD BE CONTACTED FOR THE LATEST REVISION. LOC REVISIONS DIST HJ - P LTR B9 B10 B11 B12 DESCRIPTION DATE New IM48GR
|
Original
|
PDF
|
IM48GR
IM61GR,
IM42PNS
IM41X,
IMF61,
IMB41C,
IMB42C
IM46CGR,
IMF68HR
28APR2010
7168-m
IM06D
IM48I
IM03D
IMB03C
IMC06C
IM03P
IMF61
IME06
IM42P
|
Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS A CONTROLLED DOCUMENT. LOC REVISIONS DIST HJ - P LTR A7 A8 A9 A10 1 2 DESCRIPTION additional marking REVISED PER ECO-11-005150 REVISED PER ECR-11-015637 REVISED PER ECR-13-014508 TE-Logo 3 DWN DATE HD HMR AK AK UKo RK UKo UKo 10OCT2008 25MAR2011
|
Original
|
PDF
|
ECO-11-005150
ECR-11-015637
ECR-13-014508
10OCT2008
25MAR2011
10JUN2013
16SEP2013
7168-m
20JAN1999
|
AXICOM IM03
Abstract: AXICOM IM06 AXICOM IM02 axicom im07 AXICOM im41 AXICOM im42 axicom im01 IMC03 IM03D IM48I
Text: THIS DRAWING IS A CONTROLLED DOCUMENT FOR TYCO ELECTRONICS CORPORATION IT IS SUBJECT TO CHANGE AND THE CONTROLLING ENGINEERING ORGANIZATION SHOULD BE CONTACTED FOR THE LATEST REVISION. LOC REVISIONS DIST HJ - P LTR B9 B10 B11 B12 DESCRIPTION DATE New IM48GR
|
Original
|
PDF
|
IM48GR
IM61GR,
IM42PNS
IM41X,
IMF61,
IMB41C,
IMB42C
IM46CGR,
IMF68HR
28APR2010
AXICOM IM03
AXICOM IM06
AXICOM IM02
axicom im07
AXICOM im41
AXICOM im42
axicom im01
IMC03
IM03D
IM48I
|
Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS A CONTROLLED DOCUMENT. LOC REVISIONS DIST HJ - P LTR A7 A8 A9 A10 1 2 DESCRIPTION additional marking REVISED PER ECO-11-005150 REVISED PER ECR-11-015637 REVISED PER ECR-13-014508 TE-Logo 3 DWN DATE HD HMR AK AK UKo RK UKo UKo 10OCT2008 25MAR2011
|
Original
|
PDF
|
ECO-11-005150
ECR-11-015637
ECR-13-014508
10OCT2008
25MAR2011
16SEP2013
7168-m
28AUG1998
|
Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS A CONTROLLED DOCUMENT. LOC REVISIONS DIST HJ - P LTR DESCRIPTION A4 A5 A6 A7 1 2 additional marking REVISED PER ECO-11-005150 REVISED PER ECR-11-015637 REVISED PER ECR-13-014508 TE-Logo 3 DWN DATE HD HMR AK AK UKo RK UKo UKo 10OCT2008 25MAR2011
|
Original
|
PDF
|
ECO-11-005150
ECR-11-015637
ECR-13-014508
10OCT2008
25MAR2011
10JUN2013
16SEP2013
7168-m
08APR2002
|
Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS A CONTROLLED DOCUMENT. LOC REVISIONS DIST HJ - P LTR A7 A8 A9 A10 1 2 DESCRIPTION additional marking REVISED PER ECO-11-005150 REVISED PER ECR-11-015637 REVISED PER ECR-13-014508 TE-Logo 3 DWN DATE HD HMR AK AK UKo UKo UKo UKo 10OCT2008 25MAR2011
|
Original
|
PDF
|
ECO-11-005150
ECR-11-015637
ECR-13-014508
10OCT2008
25MAR2011
10JUN2013
16SEP2013
7168-m
08AUG1998
|
transistor NEC D 822 P
Abstract: NEC D 822 P C10535E NE434S01 NE434S01-T1 NE434S01-T1B
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE434S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE434S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent
|
Original
|
PDF
|
NE434S01
NE434S01
NE434S01-T1B
transistor NEC D 822 P
NEC D 822 P
C10535E
NE434S01-T1
NE434S01-T1B
|
K 1358 fet transistor
Abstract: NE334S01 nec 2761 s11 diode shottky C10535E NE334S01-T1 NE334S01-T1B
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE334S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE334S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent
|
Original
|
PDF
|
NE334S01
NE334S01
NE334S01-T1
NE334S01-T1B
K 1358 fet transistor
nec 2761
s11 diode shottky
C10535E
NE334S01-T1
NE334S01-T1B
|
|
|
Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS A CONTROLLED DOCUMENT. LOC REVISIONS DIST HJ - P LTR DESCRIPTION A2 A3 A4 A5 1 Doc change D02239-DOK51 to C-1462033-2 change marking REVISED PER ECO-11-005150 REVISED PER ECO-13-009556 4 3 2 DWN DATE HD HD HMR AK UKo UKo RK UKo 30Jan2006 28Jul2006
|
Original
|
PDF
|
D02239-DOK51
C-1462033-2
ECO-11-005150
ECO-13-009556
30Jan2006
28Jul2006
23MAR2011
14JUN2013
COPYRIGHT2006
|
063 793
Abstract: transistor v63
Text: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES 2.1 ± 0.2 Low noise figure 1.25 ±0.1 NF = 0.6 dB TYP. at f = 2 GHz High associated gain
|
OCR Scan
|
PDF
|
NE34018
NE34018
WS60-00-1
IR30-00-3
063 793
transistor v63
|
NEC K 2500
Abstract: OLS 049 1689I DS 4069 k 3531 transistor 6323 GA NEC 2905
Text: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES Low noise figure NF = 0.6 dB TYP. at f = 2 GHz High associated gain Ga = 16 dB TYP. at f = 2 GHz
|
OCR Scan
|
PDF
|
NE34018
NE34018
NE34018-T1
NE34018-T2
NEC K 2500
OLS 049
1689I
DS 4069
k 3531 transistor
6323 GA
NEC 2905
|
XWs transistor
Abstract: xws 03
Text: SIEMENS BCR 505 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor R-|=2.2k£i, R2=10ki2 R HJ LJ Type Marking Ordering Code BCR 505 XWs Pin Configuration Q62702-C2354 1= B Package 2=E 3=C
|
OCR Scan
|
PDF
|
10ki2)
Q62702-C2354
OT-23
XWs transistor
xws 03
|
NEC Ga FET marking L
Abstract: lg TYP 513 309 NE329S01 low noise FET NEC U SAAI Marking
Text: _ DATA SHEET_ M F P / HETERO JUNCTION FIELD EFFECT TRANSÌSTOR / NE329S01 X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE329S01 is a Hetero Junction FET that utilizes the Unit: mm
|
OCR Scan
|
PDF
|
NE329S01
NE329S01
NE329S01-T1
NE329S01-T1B
NEC Ga FET marking L
lg TYP 513 309
low noise FET NEC U
SAAI Marking
|
NE334S01
Abstract: transistor C 2240 K 1358 fet transistor
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE334S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE334S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons.
|
OCR Scan
|
PDF
|
NE334S01
NE334S01
NE334S01-T1
NE334S01-T1B
IR30-00
transistor C 2240
K 1358 fet transistor
|
NE334501
Abstract: transistor k 2761 NEC D 822 P NEC Ga FET marking C nec gaas fet marking NEC Ga FET marking A ap 2761 l transistor NE334S01 low noise FET NEC U
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE334S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE334S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons.
|
OCR Scan
|
PDF
|
NE334S01
NE334S01
NE334501
transistor k 2761
NEC D 822 P
NEC Ga FET marking C
nec gaas fet marking
NEC Ga FET marking A
ap 2761 l transistor
low noise FET NEC U
|
40MAG
Abstract: No abstract text available
Text: GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER _ New Plastic Package NE34018 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES LOW COST MINIATURE PLASTIC PACKAGE (SOT-343) LOW NOISE FIGURE: 0.6 dB typical at 2 GHz CD CO ;u HIGH ASSOCIATED GAIN:
|
OCR Scan
|
PDF
|
OT-343)
NE34018
NE34018
NE34018-TI-63
NE34018-TI-64
40MAG
|
NEC Ga FET marking L
Abstract: U/25/20/TN26/15/850/NE32984D
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Unit: mm
|
OCR Scan
|
PDF
|
NE32984D
NE32984D
NE32984D-SL
NE32984Dr
NEC Ga FET marking L
U/25/20/TN26/15/850/NE32984D
|
NEC k 2134 transistor
Abstract: k 2134 nec nec gaas fet marking NEC D 809 k NEC 2134 transistor NE32584
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. PACKAGE DIMENSIONS Unit: mm
|
OCR Scan
|
PDF
|
NE32584C
NE32584C
NE32584C-T1A
NE32584C-SL
NE32584C-T1
NEC k 2134 transistor
k 2134 nec
nec gaas fet marking
NEC D 809 k
NEC 2134 transistor
NE32584
|
