maplin
Abstract: Paragon Technical Oriole unitronics plc microcom venezuela nashua 81
Text: Burr-Brown North American Distributor Sales Offices ALABAMA Arrow Semiconductor 205-864-3300 Huntsville, AL Insight Electronics 205-830-1222 Huntsville, AL FLORIDA Arrow Semiconductor 954-429-8200 Deerfield Beach, FL 407-333-9300 Lake Mary, FL MAINE Arrow Semiconductor
|
Original
|
San60
maplin
Paragon Technical
Oriole
unitronics
plc microcom
venezuela
nashua 81
|
PDF
|
str 5707
Abstract: 2SC 8050 scr ky 202 TRANSISTOR J 5804 NPN str 6709 TRANSISTOR J 5804 2sc 8188 lr 2905 transistor 2sc 8187 2SD 5703
Text: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = (any letter) Revision, see detail specification F = Active pull-down device (BiMOS only) -1 = Selected version, see detail specification
|
Original
|
MS-001,
MS-010,
MS-011)
MS-010)
MS-018)
str 5707
2SC 8050
scr ky 202
TRANSISTOR J 5804 NPN
str 6709
TRANSISTOR J 5804
2sc 8188
lr 2905 transistor
2sc 8187
2SD 5703
|
PDF
|
IRFP60A
Abstract: 40A 45V to-220 Schottky IRF7210 ir*c30ud IRFB9N65 2CWQ03FN IR 200V P-Channel fets IRFIB7N50A CONVERTER IRG4IBC10UD 876-1413
Text: powireview The Technology Update for People in Power New HEXFET MOSFETs for Every Power Supply Application IR Chip Set First to Meet Newest Notebook PC Power Standard New P-Channel HEXFET® Power MOSFETs Offer Best Performance for Low Voltage Circuits New Schottky Diodes
|
Original
|
O-220
Q101-Compliant
IRFP60A
40A 45V to-220 Schottky
IRF7210
ir*c30ud
IRFB9N65
2CWQ03FN
IR 200V P-Channel fets
IRFIB7N50A CONVERTER
IRG4IBC10UD
876-1413
|
PDF
|
hitec 410
Abstract: Hitachi DSA0023 HITACHI DIODE hitachi ic 2SK3215 Hitachi DSA00239
Text: 2SK3215 Silicon N Channel MOS FET High Speed Power Switching ADE-208-764 Z Target Specification 1st. Edition December 1998 Features • Low on-resistance R DS =350mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline
|
Original
|
2SK3215
ADE-208-764
220AB
hitec 410
Hitachi DSA0023
HITACHI DIODE
hitachi ic
2SK3215
Hitachi DSA00239
|
PDF
|
HSK122
Abstract: No abstract text available
Text: HSK122 Silicon Epitaxial Planar Diode for High Voltage Switching ADE-208-172B Z Rev. 2 Aug. 1995 Features • High reverse voltage. (VR = 400V) • LLD package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No.
|
Original
|
HSK122
ADE-208-172B
HSK122
|
PDF
|
hitec 410
Abstract: HITACHI DIODE 2SK3215 Hitachi DSA00182
Text: 2SK3215 Silicon N Channel MOS FET High Speed Power Switching ADE-208-764 Z Target Specification 1st. Edition December 1998 Features • Low on-resistance R DS =350mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline
|
Original
|
2SK3215
ADE-208-764
220AB
hitec 410
HITACHI DIODE
2SK3215
Hitachi DSA00182
|
PDF
|
hitec 410
Abstract: 2SK1165 2SK1166 2SK1328 2SK1329 Hitachi DSA00336
Text: 2SK1328, 2SK1329 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3PFM
|
Original
|
2SK1328,
2SK1329
2SK1328
hitec 410
2SK1165
2SK1166
2SK1328
2SK1329
Hitachi DSA00336
|
PDF
|
2SK2737
Abstract: 2SK2885 Hitachi DSA00238
Text: 2SK2885 L , 2SK2885(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-545 A 2nd. Edition Features • Low on-resistance R DS(on) = 10mΩ typ. • 4V gate drive devices. • High speed switching Outline LDPAK 4 4 D 1 1 G S 2 3 2 3 1. Gate 2. Drain
|
Original
|
2SK2885
ADE-208-545
2SK2737
Hitachi DSA00238
|
PDF
|
Silicon N Channel IGBT HIGH SPEED
Abstract: 2SH27 DSA003643
Text: 2SH27 Silicon N Channel IGBT High Speed Power Switching ADE-208-789A Z 2nd. Edition May 1999 Features • High speed switching • Low on-voltage Outline TO–220AB C G 1 E 2 3 1. Gate 2. Collector (Flange) 3. Emitter 2SH27 Absolute Maximum Ratings (Ta = 25°C)
|
Original
|
2SH27
ADE-208-789A
220AB
Silicon N Channel IGBT HIGH SPEED
2SH27
DSA003643
|
PDF
|
Silicon N Channel IGBT HIGH SPEED
Abstract: 2sh31 DSA003643
Text: 2SH31 Silicon N Channel IGBT High Speed Power Switching ADE-208-793 Z 1st. Edition May 1999 Features • High speed switching • Low on-voltage Outline TO–3P C G E 1 2 3 1. Gate 2. Collector (Flange) 3. Emitter 2SH31 Absolute Maximum Ratings (Ta = 25°C)
|
Original
|
2SH31
ADE-208-793
Silicon N Channel IGBT HIGH SPEED
2sh31
DSA003643
|
PDF
|
HD74HC678
Abstract: Hitachi DSA00389
Text: HD74HC678 16-bit Address Comparator Description The HD74HC678 address comparator simplifies addressing of memory boards and/or other peripheral devices. The four P inputs are normally hard wired with a preprogrammed address. An internal decoder determines what input information applied to the 16 A inputs must be low or high to cause a low state at the
|
Original
|
HD74HC678
16-bit
HD74HC678
Hitachi DSA00389
|
PDF
|
hitec 410
Abstract: HD74HC680 Hitachi DSA00396
Text: HD74HC680 12-bit Address Comparator Description The HD74HC680 address comparator simplifies addressing of memory boards and/or other peripheral devices. The four P inputs are normally hard wired with a preprogrammed address. An internal decoder determines what input information applied to the 12 A inputs must be low or high to cause a low state at the
|
Original
|
HD74HC680
12-bit
HD74HC680
hitec 410
Hitachi DSA00396
|
PDF
|
2SK2737
Abstract: Hitachi DSA00238
Text: 2SK2737 Silicon N Channel MOS FET High Speed Power Switching ADE-208-533B Z 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 10 mΩ typ. • 4V gate drive devices. • High speed switching Outline TO–220CFM D G 1 2 S 3 1. Gate 2. Drain 3. Source
|
Original
|
2SK2737
ADE-208-533B
220CFM
2SK2737
Hitachi DSA00238
|
PDF
|
2SK3081
Abstract: Hitachi DSA00239
Text: 2SK3081 Silicon N Channel MOS FET High Speed Power Switching ADE-208-636A Z 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 10mΩ typ. • 4V gate drive devices. • High speed switching Outline TO–220AB D G 1 2 S 3 1. Gate 2. Drain(Flange)
|
Original
|
2SK3081
ADE-208-636A
220AB
2SK3081
Hitachi DSA00239
|
PDF
|
|
|
2SC3127
Abstract: 2SC3128 2SC3510 Hitachi DSA00398 f2nd
Text: 2SC3127, 2SC3128, 2SC3510 Silicon NPN Epitaxial Application UHF/VHF wide band amplifier Outline MPAK 2SC3127 3 1 2 1. Emitter 2. Base 3. Collector 2SC3127, 2SC3128, 2SC3510 TO-92 2 2SC3128, 2SC3510 1. Base 2. Emitter 3. Collector 3 2 1 Absolute Maximum Ratings (Ta = 25°C)
|
Original
|
2SC3127,
2SC3128,
2SC3510
2SC3127
2SC3127*
2SC3127
2SC3128
2SC3510
Hitachi DSA00398
f2nd
|
PDF
|
HAT2049T
Abstract: Hitachi DSA00385 A2V-16
Text: HAT2049T Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-723 Z 1st. Edition February 1999 Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline TSSOP–8 87 65 12 34 1 5 8
|
Original
|
HAT2049T
ADE-208-723
HAT2049T
Hitachi DSA00385
A2V-16
|
PDF
|
2SK2554
Abstract: Hitachi DSA00238
Text: 2SK2554 Silicon N-Channel MOS FET ADE-208-359 D 5th. Edition Application High speed power switching Features • • • • Low on-resistance R DS on = 4.5 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-3P D
|
Original
|
2SK2554
ADE-208-359
2SK2554
Hitachi DSA00238
|
PDF
|
2SK2958
Abstract: Hitachi DSA00239
Text: 2SK2958 L ,2SK2958(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-568B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 5.5mΩ typ. • 4V gate drive devices. • High speed switching Outline LDPAK 4 4 D 1 G 1 S 2 3 2 3
|
Original
|
2SK2958
ADE-208-568B
Hitachi DSA00239
|
PDF
|
2SK1165
Abstract: 2SK1166 Hitachi DSA00387
Text: 2SK1165, 2SK1166 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P
|
Original
|
2SK1165,
2SK1166
2SK1165
2SK1165
2SK1166
Hitachi DSA00387
|
PDF
|
2SJ555
Abstract: Hitachi 2SJ Hitachi DSA00395
Text: 2SJ555 Silicon P Channel MOS FET High Speed Power Switching ADE-208-634A Z 2nd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.017Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO–3P D G 1 S 2
|
Original
|
2SJ555
ADE-208-634A
2SJ555
Hitachi 2SJ
Hitachi DSA00395
|
PDF
|
HAT2039R
Abstract: MS-012AA Hitachi DSA00240
Text: HAT2039R Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-667C Z 4th. Edition February 1999 Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline SOP–8 8 5 7 6 3 1 2 7 8
|
Original
|
HAT2039R
ADE-208-667C
HAT2039R
MS-012AA
Hitachi DSA00240
|
PDF
|
1a02a
Abstract: Hitachi DSA002752
Text: HAT2039R Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-667C Z 4th. Edition February 1999 Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline SOP–8 8 5 7 6 3 1 2 7 8
|
Original
|
HAT2039R
ADE-208-667C
1a02a
Hitachi DSA002752
|
PDF
|
2SJ505
Abstract: Hitachi DSA00347
Text: 2SJ505 L , 2SJ505(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-547 Target specification 1st. Edition Features • Low on-resistance R DS(on) = 0.017Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline
|
Original
|
2SJ505
ADE-208-547
Hitachi DSA00347
|
PDF
|
IC sn 74 ls 83
Abstract: No abstract text available
Text: HB56G51232CC-x x S Series 524,288-W ord X 32-Bit H igh Density D ynamic RAM Card Rev.l Dec. 07, 1992 •» H IT A C H I D e sc rip tio n The HB56G51232CC-X XS is a 512KX32 dynamic RAM Card, mounted 4 pieces of 4Mbit DRAM HM51S4800ALTT sealed in TSOP package.
|
OCR Scan
|
HB56G51232CC-x
32-Bit
512KX32
HM51S4800ALTT)
88-pin
IC sn 74 ls 83
|
PDF
|