HD6417709AF133
Abstract: hd6417709a A6W 85 MB3771 A6W 76 diode a4W BUFFER HD74LS244 A6W 87 HD6417709AF making code a6w A6W 76 A6W 99 DBLC-J25SAF
Text: Hitachi Microcomputer Development Environment System SH7709A CPU Board HS7709ASTC01H SH7729 CPU Board HS7729STC01H User’s Manual ADE-702-215 Rev. 1.0 07/27/00 Hitachi, Ltd. HS7709ASTC01HE B Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
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SH7709A
HS7709ASTC01H
SH7729
HS7729STC01H
ADE-702-215
HS7709ASTC01HE
SH7709A/SH7729
HD6417709AF133
hd6417709a
A6W 85 MB3771 A6W 76 diode a4W
BUFFER HD74LS244
A6W 87
HD6417709AF
making code a6w
A6W 76
A6W 99
DBLC-J25SAF
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HEC0470-01-630
Abstract: EXO-3C 0180000A E28F128 HEC0470 kel manual tools P1WP Mitsubishi DA U31 3.96 Card Edge Connectors MB3771
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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J512
Abstract: SH4 programming manual J392 transistor UB1112C LT108 e3 elco power supply SG8002CA mcr10ezh j105 TDA 2010 performance Measurement CDC2509
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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SH7751
HS7751STC01H
J512
SH4 programming manual
J392 transistor
UB1112C
LT108 e3
elco power supply
SG8002CA
mcr10ezh j105
TDA 2010 performance Measurement
CDC2509
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A6W 85 MB3771 A6W 76 diode a4W
Abstract: A6W 76 Transistor A6W 87 diode a4W making code a6w A6W 85 A6W 99 HEC0470-01-630 SEMICONDUCTORS A4w a4w 76
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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JASO
Abstract: ZSH5MA27 hitachi diode ZSA5A27 ZSA5A27 JASO a-1 U05E U15E HITACHI zsa5ma27 diode reverse voltage protection DIODE R3
Text: 28 No. Hitachi Power Device Technical Information PD Room This issue presents power diodes for protection of electronics in automotive products. Diode for prevent reverse connection Purpose; circuit protection for battery reverse connection Recommend ; ; DSA3A
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50ms/div
JASO
ZSH5MA27
hitachi diode ZSA5A27
ZSA5A27
JASO a-1
U05E
U15E HITACHI
zsa5ma27
diode reverse voltage protection
DIODE R3
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DHM3J120
Abstract: ZSH5MT27C ZSH5MAZ27 DHM3T30 hitachi V06 DHM3G80 DHM3 H114 ZSH5MT48C 7637-2 12V
Text: HITACHI Power Diode Ｓｅｌｅｃｔｉｏｎ Ｇｕｉｄｅ 日立パワーダイオード セレクションガイド －第 １ 版－ 株式会社 日立製作所 電力システム社 電機システム事業部 パワーデバイス本部 事業企画部
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APL-7107R1
100VVZZ
100VV
IRSM130A)
001500V
214kV
DHM3J120
ZSH5MT27C
ZSH5MAZ27
DHM3T30
hitachi V06
DHM3G80
DHM3
H114
ZSH5MT48C
7637-2 12V
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V03C
Abstract: V03J V03E V03G PDE-V03-0 hitachi V03 Hitachi DSA00504 V03C diode diode v03 hitachi
Text: GENERAL-USE RECTIFIER DIODE V03 OUTLINE DRAWING V03C 200V V03E (400V) V03G (600V) V03J (800V) 29MIN. (1.14) Color of cathode band Type φ 0.8 (0.03) 5MAX (0.2) 62MIN. (2.44) 29MIN. (1.14) Direction of polarity Unit in mm(inch) Cathode band • For general purpose.
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29MIN.
62MIN.
V03C
V03J
V03E
V03G
PDE-V03-0
hitachi V03
Hitachi DSA00504
V03C diode
diode v03 hitachi
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V03E HITACHI
Abstract: V03J V03G PDE-V03-0 V03C V03E hitachi V03 hitachi V03C diode v03 hitachi
Text: GENERAL-USE RECTIFIER DIODE V03 OUTLINE DRAWING V03C 200V V03E (400V) V03G (600V) V03J (800V) 29MIN. (1.14) Color of cathode band Type φ 0.8 (0.03) 5MAX (0.2) 62MIN. (2.44) 29MIN. (1.14) Direction of polarity Unit in mm(inch) Cathode band • For general purpose.
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29MIN.
62MIN.
V03E HITACHI
V03J
V03G
PDE-V03-0
V03C
V03E
hitachi V03
hitachi V03C
diode v03 hitachi
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Untitled
Abstract: No abstract text available
Text: GENERAL-USE RECTIFIER DIODE V03 FEATURES OUTLINE DRAWING • For general purpose. • Diffused-junction. Glass passivated and encapsulated. ABSOLUTE MAXIMUM RATINGS Item Type V03C V03E V03G V03J Repetitive Peak Reverse Voltage V RRM V 200 400 600 800 Non-Repetitive Peak Reverse Voltage
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PDE-V03-2
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ZSH5MAZ27
Abstract: ZSH5MA27 ZSH5MT V06C HITACHI ZSH5MT27 IN 47 serise zener diodes data ZSA5A27 hitachi rectifier U05B DSA3A1 V06C
Text: Status List Date:Nov. 2010 Compliance status of RoHS directive C:Compliant S.C:Compliant Included RoHS exemption substance N:Non compliant Production Status M:Mass production O:Order production W:Working sample A:Abolition •General-Use Rectifier Diodes
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KS10008
ZSH5MAZ27
ZSH5MA27
ZSH5MT
V06C HITACHI
ZSH5MT27
IN 47 serise zener diodes data
ZSA5A27
hitachi rectifier U05B
DSA3A1
V06C
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HM514280AJ7
Abstract: HM514280AZ8 HM514280AJ-7 HM514280AJ-8 HM514280AJ HM514280ATT HM514280AZ HM514280AJ8
Text: HM514280A/AL, HM51S4280A/AL Series Prelim inary 262,144-Word x 18-Bit Dynamic Random Access Memory • DESCRIPTION ■ FEATURES The Hitachi HM514280A/AL are CMOS dynamic RAM organized as 262,144-word x 18-bit. HM514280A/AL have realized higher density, higher performance and various
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HM514280A/AL,
HM51S4280A/AL
144-Word
18-Bit
HM514280A/AL
18-bit.
HM514280AJ7
HM514280AZ8
HM514280AJ-7
HM514280AJ-8
HM514280AJ
HM514280ATT
HM514280AZ
HM514280AJ8
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HM51428
Abstract: No abstract text available
Text: HM514280A/AL, HM51S4280A/AL Series Preliminary 262,144-Word x 18-Bit Dynamic Random Access Memory • DESCRIPTION ■ FEATURES The Hitachi HM514280A/AL are CMOS dynamic RAM organized as 262,144-word x 18-bit. HM514280A/AL have realized higher density, higher performance and various
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HM514280A/AL,
HM51S4280A/AL
144-Word
18-Bit
HM514280A/AL
18-bit.
HM51428
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2SK1522
Abstract: No abstract text available
Text: 2SK1521,2SK1522 Silicon N-Channel MOS FET HITACHI Application High speed power switching Features • • • • • Low on-resistanee High speed switching Low drive current Built-in fast recovery diode t^ = 120 ns Suitable for motor control, switching regulator, DC-DC converter
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2SK1521
2SK1522
2SK1521,
2SK1522
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HM514270AJ8
Abstract: No abstract text available
Text: HM514270A/AL, HM51S4270A/AL Series 262,144-Word X 16-Bit Dynamic Random Access Memory • DESCRIPTION ■ FEATURES The Hitachi HM514270A/AL are CMOS dynamic RAM or ganized as 262,144-word x 16-bit. HM514270A/AL have re alized higher density, higher performance and various func
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HM514270A/AL,
HM51S4270A/AL
144-Word
16-Bit
HM514270A/AL
16-bit.
HM514270AJ8
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HN27C4096
Abstract: HN27C4096HCC HN27C4096HG HN27C4096HG-85 HN27C4906HCC-85 Hitachi Scans-001
Text: blE D • 44^203 002214^ ^ 7 ■HIT2 HN27C4096HG/HCC Series-262,144-word x 16-Wl C M O S U V Era sa b le and Program m able ROM HITACHI/ LOGIC/ARRAYS/MEM HN27C4096HG/HCC is a 4-M bit u ltravio let erasable and electrically programmable RO M , featuring high speed and low power dissipation.
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HN27C4096HG/HCC
144-word
16-bJt
HN27C4096HG
16-bit
32-bit
HN27C4096
40-pin
44-pin.
HN27C4096HCC
HN27C4096HG-85
HN27C4906HCC-85
Hitachi Scans-001
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Untitled
Abstract: No abstract text available
Text: HB56D51236 Series 524,288-Word x 36-Bit High Density Dynamic RAM Module • DESCRIPTION The HB56D51236B is a 512k x 36 dynamic RAM module, mounted 16 pieces of 1 Mbit DRAM HM514256JP sealed in SOJ package and 8 pieces of 256k-bit DRAM (HM51256CP) sealed in PLCC package. An outline of the HB56D51236B is
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HB56D51236
288-Word
36-Bit
HB56D51236B
HM514256JP)
256k-bit
HM51256CP)
72-pin
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m51164
Abstract: ALRS8 a1a511 A255K HM5116400ATS A8819
Text: HM5116400A/AL Series 4,194,304-w ord x 4-bit Dynam ic Random Access Memory The H itachi H M 5 116400A /A L is a C M O S dynamic R A M organized 4,194,304 words x 4 bits. It employs the most advanced CMOS technology for high perform ance and low power. The
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HM5116400A/AL
304-word
ns/70
ns/80
mW/385
mW/358
16-bit
m51164
ALRS8
a1a511
A255K
HM5116400ATS
A8819
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Untitled
Abstract: No abstract text available
Text: HB56D136B-8/10/12 36-Bit DRAM 1,048,576-Word RAM Module x 36-Bit High Density Dynamic • PIN OUT ■ DESCRIPTION The HB56D136B is a 1M x 36 dynamic RAM module, mounted 6 pieces of 4Mbit DRAM HM514400JP sealed in SOJ package and 4 pieces of 1Mbit DRAM (HM511000AJP) sealed in SOJ package. An
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HB56D136B-8/10/12
36-Bit
576-Word
HB56D136B
HM514400JP)
HM511000AJP)
72-pin
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514400J
Abstract: 511000a
Text: HB56D236B-8/10/12-2,097,152-Word x 36-Bit High Density Dynamic RAM Module • DESCRIPTION PIN OUT T h e H B 56D 236B is a 2M x 36 dynam ic RA M module, mounted 16 pieces of 4M bit DR AM H M 514400JP sealed in SOJ package and 8 pieces of 1Mbit ORAM (HM 511000AJP) sealed in SOJ package. An
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HB56D236B-8
HB56D236B-10
HB56D236B-12
152-Word
36-Bit
514400JP)
511000AJP)
72-pin
D236B-8/10/12----------------------------
514400J
511000a
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Untitled
Abstract: No abstract text available
Text: HB56D25632 S eries-262,144-Word x 32-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN OUT The HB56D25632B is a 256k x 32 dynamic RAM module, mounted 8 pieces of 1 Mbit DRAM HM514256JP sealed in SOJ package. An outline of the HB56D25632B is 72-pin sin
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HB56D25632
eries---------262
144-Word
32-Bit
HB56D25632B
HM514256JP)
72-pin
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V03C
Abstract: V03E V03G V03E HITACHI 1S1948 hitachi V03C V03C diode 1S1949 hitachi V03G
Text: TYPE V03 I • FEATURES • This diode is designed to serve as universal type optimum for use in a variety of electronic devices including control circuits, communication equipment and household electric appliances. • Compact, lightweight structure with a glass en
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10msec
10msec,
V03C
V03E
V03G
V03E HITACHI
1S1948
hitachi V03C
V03C diode
1S1949
hitachi V03G
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TT 2246
Abstract: V09C hitachi V06 V09E V09G
Text: TYPE I VQ9 •FEATURES UP TO 600V 1.3A RMS HIGH SPEED T YPE DIODE OUTLINE DRAWING • Developed for switching applications, this device has a reverse recovery time of 0.5/isec. Optimum for use in high-frequency circuits such as televi 0. 8 : sion horizontal deflection circuits.
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iiV03,
10msec
10msec.
V09GI600V)
TT 2246
V09C
hitachi V06
V09E
V09G
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1S2595
Abstract: U07N 1S2593 U07M 1S2592 1S2594 U07J U07L hitachi V03 V06E
Text: I U07 TYPE •FEATURES UP TO 1500V 1,6A RMS HIGH SPEED TYPE DIODE • U07 is a device developed for switching appli cations, with a reverse recovery time of 0.8/isec. This product is optimum for use in high-frequency circuits such as television horizontal deflection
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V03/V06,
10msec
1S2595
U07N
1S2593
U07M
1S2592
1S2594
U07J
U07L
hitachi V03
V06E
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V06C HITACHI
Abstract: DHM3K20 DHM3HC80 hitachi rectifier U05B DHM3G80 DFM1SA DHM3FG80 DAM3A HITACHI DFG2A hitachi V03C
Text: Diodes Axial • it m. Lead Type v-vwmm* mm#*- m¿2&&r¿3>cy7 vyz^mm^ l«-?íf5o t t x - yy yya iFeatures ►Hitachi diodes are available for any kind of applications. The versatile lineup includes general use rectifier diodes, surge-absorbing devices, high-voltage
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AW01-06
AW01/AU01-07
V06C HITACHI
DHM3K20
DHM3HC80
hitachi rectifier U05B
DHM3G80
DFM1SA
DHM3FG80
DAM3A HITACHI
DFG2A
hitachi V03C
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