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    HITACHI TRANSISTOR MARKING Search Results

    HITACHI TRANSISTOR MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    HITACHI TRANSISTOR MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC 8550

    Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
    Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4


    Original     		PDF 3SK309 3SK317 3SK318 BB101C BB102C BB301C BB302C BB304C BB305C BB501C 2SC 8550 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545

    Amplifire

    Abstract: No abstract text available
    Text: HITACHI 2SC4964-Silicon NPN Bipolar Transistor Application VHF & UHF wide band amplifire MPAK Features <# • Low Ron and high performance for RF switch. • Capable of high density mounting. Table 1 Absolute Maximum Ratings Ta = 25 °C Item Symbol


    OCR Scan     		PDF 2SC4964 Amplifire

    2SC4966

    Abstract: Amplifire
    Text: HITACHI 2SC4966 -Silicon NPN Bipolar Transistor Application VHF & UHF wide band amplifire MPAK Features • Low Ron and high performance for RF switch. • Capable of high density mounting. <#• Table 1 Absolute Maximum Ratings Ta = 25°C Item Symbol


    OCR Scan     		PDF 2SC4966 2SC4966 Amplifire

    Untitled

    Abstract: No abstract text available
    Text: HITACHI 2SC4905-Silicon NPN Bipolar Transistor Application CMPAK VHF & UHF wide band amplifire Features • High gain bandwidth product fT = 5.8 GHz typ • High gain, low noise figure PG = 12.0 dB typ, NF = 1.6 dB typ at f = 900 MHz 1. Emitter


    OCR Scan     		PDF 2SC4905

    Untitled

    Abstract: No abstract text available
    Text: 2SD2423 Silicon NPN Epitaxial, Darlington HITACHI Application Low frequency power amplifier Features The transistor with a built-in zener diode o f surge absorb. Outline UPAK 2 ,4 1. 2. 3. 4. 1006 Base Collector Emitter Collector Flange (Typ) (Typi ¿ 3


    OCR Scan     		PDF 2SD2423

    transistor 2sc 548

    Abstract: No abstract text available
    Text: HITACHI 2SC4993 -Silicon NPN Bipolar Transistor Application MPAK-4 VHF & UHF wide band amplifier Features • High gain bandwidth product fx = 10.5 GHz typ * High gain, low noise figure PG = 16.5 dB typ, NF = 1.2 dB typ at f = 900 MHz 1. Collector 2. Emitter


    OCR Scan     		PDF 2SC4993 transistor 2sc 548

    zo 103 ma

    Abstract: No abstract text available
    Text: HITACHI 2SC5246-Silicon NPN Epitaxial Transistor Application SMPAK VHF & UHF wide band amplifier Features • High gain bandwidth product f j = 12 GHz typ. • High gain, low noise figure P G = 16.5 dB typ., NF = 1.6 dB typ. at f = 900 MHz * 1. Emitter


    OCR Scan     		PDF 2SC5246------Silicon ap-171 2SC5246 zo 103 ma

    Untitled

    Abstract: No abstract text available
    Text: HITACHI 2SC4791 -Silicon NPN Bipolar Transistor Application MPAK-4 VHF & UHF wide band amplifier Features • High gain bandwidth product f j = 10 GHz typ • High gain, low noise figure PG = 15.5 dB typ, NF = 1.2 dB typ at f = 900 MHz 1. 2. 3.


    OCR Scan     		PDF 2SC4791 2SC4791

    Untitled

    Abstract: No abstract text available
    Text: 2SC5080 Silicon NPN Epitaxial Transistor HITACHI Application VHF / UHF wide band amplifier Features • High gain bandwidth product • High gain, low noise figure fT= 13.5 GHz typ PG = 18 dB typ, NF = 1.1 dB typ at f = 900 MHz Outline MPAK-4 4 - 3^dBgH 1.


    OCR Scan     		PDF 2SC5080

    transistor CD 910

    Abstract: No abstract text available
    Text: HITACHI 2SC4901 -Silicon NPN Bipolar Transistor Application CMPAK VHF & UHF wide band amplifire Features 4 • High gain bandwidth product f-p = 9 GHz typ • High gain, low noise figure PG = 13.0 dB typ, NF = 1.2 dB typ at f = 900 MHz 1. Emitter 2. Base


    OCR Scan     		PDF 2SC4901 transistor CD 910

    code Transistor ya

    Abstract: MARKING CODE YA TRANSISTOR
    Text: HITACHI 2SC5137-Silicon NPN Epitaxial Transistor Application SMPAK VHF & UHF wide band amplifier Features • High gain bandwidth product f j - 10 GHz typ. • High gain, low noise figure PG = 16.5 dB typ., NF = 1.5 dB typ. at f = 900 MHz 1. Emitter 2. Base


    OCR Scan     		PDF 2SC5137------Silicon 2SC5137 code Transistor ya MARKING CODE YA TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: HITACHI 2SC5139-Silicon NPN Epitaxial Transistor Application SMPAK VHF & UHF wide band amplifier Features • High gain bandwidth product f-p = 11 GHz typ. • High gain, low noise figure PG = 15 dB typ., NF = 1.1 dB typ. at f = 900 MHz 1. Emitter 2. Base


    OCR Scan     		PDF 2SC5139------Silicon 2SC5139

    SL6 TRANSISTOR

    Abstract: No abstract text available
    Text: 2SC5080 Silicon NPN Epitaxial Transistor HITACHI Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT= 13.5 GHz typ • High gain, low noise figure PG = 18 dB typ. NF = 1.1 dB typ at f = 900 MHz Outline MPAK-4 • 1. 2. 3.


    OCR Scan     		PDF 2SC5080 D-85622 SL6 TRANSISTOR

    2sc4991

    Abstract: No abstract text available
    Text: HITACHI 2SC4991 -Silicon NPN Bipolar Transistor Application VHF & UHF wide band amplifire M PA K -4 Features 3àâ • High gain bandwidth product fT = 9.5 GHz typ • High gain, low noise figure PG = 14.5 dB typ, NF = 1.2 dB typ at f = 900 MHz


    OCR Scan     		PDF 2SC4991 2SC4991

    Untitled

    Abstract: No abstract text available
    Text: HITACHI 2SC5050-Silicon NFN Bipolar Transistor Application V HF & UHF wide band amplifire MPAK Features • High gain bandwidth product fT = 11 GHz typ • High gain, low noise figure PG = 14.0 dB typ, N F = 1.1 dB typ at f = 900 MHz 1. Emitter 2. Base


    OCR Scan     		PDF 2SC5050-----Silicon IS211 2SC4926. 2SC5050

    transistor marking tT2

    Abstract: No abstract text available
    Text: HITACHI 2SC5140-Silicon NPN Epitaxial Transistor Application SMPAK VHF & UHF wide band amplifier Features • High gain bandwidth product f j = 9 GHz typ. • High gain, low noise figure PG = 15 dB typ., NF = 1.6 dB typ. at f = 900 MHz 1. Emitter 2. Base


    OCR Scan     		PDF 2SC5140------Silicon 2SC5140 transistor marking tT2

    transistor 2sc 973

    Abstract: TRANSISTOR 2SC 733
    Text: HITACHI 2SC5247-Silicon NPN Epitaxial Transistor Application SMPAK VHF & UHF wide band amplifier Features • High gain bandwidth product f-j- = 13.5 GHz typ. • High gain, low noise figure PG = 17 dB typ., NF = 1.2 dB typ. at f = 9 0 0 MHz 1. Emitter


    OCR Scan     		PDF 2SC5247------Silicon 2SC5247 transistor 2sc 973 TRANSISTOR 2SC 733

    transistor 2SC 536

    Abstract: No abstract text available
    Text: HITACHI 2SC4902-Silicon NPN Bipolar Transistor Application MPAK VHF & UHF wide band amplifire Features • High gain bandwidth product f j = 6 GHz typ • High gain, low noise figure PG = 12.0 dB typ, NF = 1.6 dB typ at f= 900 MHz # 1. Emitter 2. Base


    OCR Scan     		PDF 2SC4902 transistor 2SC 536

    Untitled

    Abstract: No abstract text available
    Text: HITACHI 2SC4904-Silicon NPN Bipolar Transistor Application MPAK VHF & UHF wide band amplifire 3 Features 4P • High gain bandwidth product fT = 5.8 GHz typ • High gain, low noise figure PG = 12.0 dB typ, NF = 1.6 dB typ a tf = 900M H z 1. Emitter 2. Base


    OCR Scan     		PDF 2SC4904

    c 3866 transistor

    Abstract: No abstract text available
    Text: 2SC4784 Silicon NPN Bipolar Transistor HITACHI Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT= 10 GHz typ • High gain, low noise figure PG = 15.0 dB typ. NF = 1.2 dB typ at f = 900 MHz Outline CM PAK 2 2. Base 3. Collector


    OCR Scan     		PDF 2SC4784 D89-9 c 3866 transistor

    Untitled

    Abstract: No abstract text available
    Text: HITACHI 2SC4807-Silicon NPN Bipolar Transistor Application UPAK VHF & UHF wide band amplifier Features 1 • High gain bandwidth product f-j- = 4.4 GHz typ • High output power 1 dB Power compression point, Pep = 24 dBm typ at VCE = 5V , I c = 100 mA , f = 900 MHz


    OCR Scan     		PDF 2SC4807-----Silicon

    Untitled

    Abstract: No abstract text available
    Text: HITACHI 2SC4965 -Silicon NPN Bipolar Transistor Application VHF & UHF wide band amplifire CM PAK Features t • Low Ron and high performance for RF switch. • Capable of high density mounting. ^ . 2 Table 1 A bsolu te M a x im u m R atings Ta = 25°C


    OCR Scan     		PDF 2SC4965 2SC4965

    SL6 TRANSISTOR

    Abstract: transistor hitachi
    Text: 2SC5081 Silicon NPN Epitaxial Transistor HITACHI A pplication VHF / UHF wide band amplifier Features • High gain bandwidth product fT= 13.5 GHz typ • High gain, low noise figure PG = 18 dB typ. NF = 1.1 dB typ at f = 900 MHz O utline CMPAK-4 , 2 1. 2.


    OCR Scan     		PDF 2SC5081 D-85622 SL6 TRANSISTOR transistor hitachi

    Untitled

    Abstract: No abstract text available
    Text: 2SC4784 Silicon NPN Bipolar Transistor HITACHI Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT= 10 GHz typ • High gain, low noise figure PG = 15.0 dB typ, NF = 1.2 dB typ at f = 900 MHz Outline CM PAK ^P ' 2 1. Em itter


    OCR Scan     		PDF 2SC4784