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    HITACHI POWER TRANSISTOR Search Results

    HITACHI POWER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    HITACHI POWER TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    igbt inverter welder schematic

    Abstract: inverter welder schematic diagram inverter welder schematic inverter welder schematic 1 phase using igbt inverter welder schematic 1 phase MBM300GS12A inverter welder 4 schematic hitachi igbt TOSHIBA IGBT snubber igbt testing procedure
    Text: Ref.No. IGBT-01 Rev.2 Hitachi, Ltd. Power & Industrial Systems Power Semiconductor Dept. Power & Industrial Systems Div. Hitachi IGBT Module Application Manual 1 Introduction to Hitachi IGBT Modules This application manual references specifications of the GS Series AW Version of Hitachi Insulated


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    IGBT-01 UL94VO, igbt inverter welder schematic inverter welder schematic diagram inverter welder schematic inverter welder schematic 1 phase using igbt inverter welder schematic 1 phase MBM300GS12A inverter welder 4 schematic hitachi igbt TOSHIBA IGBT snubber igbt testing procedure PDF

    Ultrasonic humidifier circuit

    Abstract: SHIP UNLOADER Ultrasonic humidifier ultrasonic humidifier driver circuit surge suppressor circuit Ultrasonic humidifier unit G746 MIL-P-28809 100MW QFN Shipping Trays
    Text: HITACHI POWER SEMICONDUCTOR DEVICES No.IC-0601E Precautions for Use of Hitachi High-Voltage Monolithic ICs Be sure to read this information before use. Hitachi, Ltd. Power Systems Power & Industrial Systems Division Power Device Division Management Department


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    IC-0601E Ultrasonic humidifier circuit SHIP UNLOADER Ultrasonic humidifier ultrasonic humidifier driver circuit surge suppressor circuit Ultrasonic humidifier unit G746 MIL-P-28809 100MW QFN Shipping Trays PDF

    HITACHI microcontroller H8S family

    Abstract: HITACHI microcontroller HITACHI microcontroller H8S architecture H8/3069F TRACE32- ICD EDK2612 LEM3664 hitachi qfp 80 pin case microcontroller hitachi power steering car
    Text: Hitachi Microcontrollers • Hitachi microcontrollers – a continuous success story ■ 4th generation 0.18µm Flash microcontroller ■ Microcontroller for electric power steering systems ■ 8-bit and 16-bit MCUs for low power ■ Emulation module for H8/300H Tiny series


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    16-bit H8/300H segme10T LEM3664 HITACHI microcontroller H8S family HITACHI microcontroller HITACHI microcontroller H8S architecture H8/3069F TRACE32- ICD EDK2612 hitachi qfp 80 pin case microcontroller hitachi power steering car PDF

    HA17805P

    Abstract: hitachi j100 HA17812P J5001 TLG223 r346 rectifier ha17805 nihon cement sg 403 varistor transistor c373
    Text: HA16141/42, HA16341/42 PFC and PWM Controller, Redundant Secondary Switching Power Supply Controller Application Note ADE-504-005 Z Rev.0 Apr. 2002 Hitachi Notice When using this document, keep the following in mind: 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,


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    HA16141/42, HA16341/42 ADE-504-005 HA17812P IC307 HA17431UA HA16341NT HA16341/42 HA17805P hitachi j100 J5001 TLG223 r346 rectifier ha17805 nihon cement sg 403 varistor transistor c373 PDF

    Ta2O5

    Abstract: No abstract text available
    Text: Hitachi and Renesas Technology Develop Phase-Change Memory Cell Technology Enabling Low-Power Operation and Stable Fabrication  New memory cell structure employing Ta2 O 5 interfacial layer  Tokyo, December 11, 2006 Hitachi, Ltd. NYSE:HIT / TSE:6501 and Renesas Technology Corp. today


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    Electronic components book

    Abstract: Hitachi transistor power electronic transistor
    Text: Hitachi Electronic Components Data Book Hitachi Bipolar Power Transistor


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    APC UPS es 500 CIRCUIT DIAGRAM

    Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
    Text: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.


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    ADE-408 50502C APC UPS es 500 CIRCUIT DIAGRAM sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212 PDF

    2SB367

    Abstract: TRANSISTOR 2sb367 2SB368 2SB77 B77A hitachi 2SB77 PNP power transistors by hitachi 2SB368 B 2SB77A 2sb77 d
    Text: HITACHI TRANSISTORS — FOR MEDIUM POWER AMPLIFIER USE— The Hitachi 2SB367 and 2SB368 are germanium PNP alloyed junction type transistors, featuring high current transfer ratio which can not be attained by conventional alloyed junction power transistors. The depend­


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    2SB367 2SB368 150mmx 50mmx50mmxl TK2395, TRANSISTOR 2sb367 2SB77 B77A hitachi 2SB77 PNP power transistors by hitachi 2SB368 B 2SB77A 2sb77 d PDF

    2SC1413

    Abstract: 2SC1413 HITACHI color PICTURE TUBE SC1413A 2SC1413A 2SC141 SC1413 1413A 2sc1413a hitachi
    Text: HITACHI TRANSISTORS SC1413A For Horizontal Deflection O u tput of Color T V The Hitachi 2SC 1413 and 2S C 1413 A are silicon NPN triple diffused type power transistor specifically designed fo r the horizontal o utput stage in power-transformer-less television receivers.


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    SC1413A 2SC1413 2SC1413A 2SC1413 HITACHI color PICTURE TUBE SC1413A 2SC141 SC1413 1413A 2sc1413a hitachi PDF

    2SC4927

    Abstract: 2SK1269 2sc2610 transistor 2sd2300 transistor 2sk 2SC2611 2SC4896 TO-22OAB 2SB566 2SB566A
    Text: 24 HITACHI 4. Power Bipolar Transistors 4.1 Introduction This power bipolar transistor line-up contains data on the range of Hitachi's discrete devices for applications in industrial, automotive, computer and consumer equipment. 4.2 Planar Process Technology


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    2SC26U 2SC4828 2SC2611 2SK296 2SK296 2SD2299 2SC4927 2SK1269 2sc2610 transistor 2sd2300 transistor 2sk 2SC4896 TO-22OAB 2SB566 2SB566A PDF

    TO-22OAB

    Abstract: 2SD476 2sc2899 transistor 2SB566 2SB566A 2SC2612 2SC2613 2SC2816 2SC2898 2SC2899
    Text: 24 HITACHI 4. Power Bipolar Transistors 4.1 Introduction This power bipolar transistor line-up contains data on the range of Hitachi's discrete devices for applications in industrial, automotive, computer and consumer equipment. 4.2 Planar Process Technology


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    2SD476 2SD476A 2SD1136 2SDU37 2SD1138 2SD1163 2SD1163A 2SD1527 2SB1392 2SB1530 TO-22OAB 2sc2899 transistor 2SB566 2SB566A 2SC2612 2SC2613 2SC2816 2SC2898 2SC2899 PDF

    2SK1275

    Abstract: 4AM14 6am12 2SK970 2SK971 2SK972 2SK973 2SK975 4AK15 4AK16
    Text: 14 HITACHI 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching


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    10-pin 12-pin 4AK17 2SK972 4AK15 2SK971 2SK1202 2SK1203 2SK1204 2SK696 2SK1275 4AM14 6am12 2SK970 2SK971 2SK972 2SK973 2SK975 4AK16 PDF

    2SK1778

    Abstract: 2sk1299 4AM12 transistor 2sk1304 2sj177 4AK22 2SK1919 2SK971 transistor 2sk 2SK972
    Text: HITACHI 14 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching


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    10-pin 12-pin 4AK17 2SK972 4AK15 2SK971 2SK1665 2SJ215 2SJ217 2SK1303 2SK1778 2sk1299 4AM12 transistor 2sk1304 2sj177 4AK22 2SK1919 2SK971 transistor 2sk 2SK972 PDF

    2SK1778

    Abstract: 2SK971 2SK970 2SK972 2SK973 2SK975 4AK15 4AK16 4AK17 4AK18
    Text: 14 HITACHI 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching


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    10-pin 12-pin 4AK17 2SK972 4AK15 2SK971 2SK1665 2SJ215 2SJ217 2SK1303 2SK1778 2SK971 2SK970 2SK972 2SK973 2SK975 4AK16 4AK17 4AK18 PDF

    6AM12

    Abstract: SP12TA 2sk970 SP12 PACKAGE TYPE 6 2SK971 4AK16 2SK972 2SK973 2SK97-1 4AK15
    Text: 14 HITACHI 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching


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    10-pin 12-pin 4AK17 2SK972 4AK15 2SK971 2SK1254 SP-12 6AM11 2SK970 6AM12 SP12TA 2sk970 SP12 PACKAGE TYPE 6 2SK971 4AK16 2SK972 2SK973 2SK97-1 PDF

    2SK1254

    Abstract: 2sj177 2SK970 2SK971 2SK972 2SK973 2SK975 4AK15 4AK16 4AK17
    Text: HITACHI 14 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully m oulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching


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    10-pin 12-pin 4AK17 2SK972 4AK15 2SK971 2SK1254 2sj177 2SK970 2SK971 2SK972 2SK973 2SK975 4AK16 4AK17 PDF

    Untitled

    Abstract: No abstract text available
    Text: Au6 2 5 1993 HA16113FPJ Microprocessor System Power Controller Preliminary HITACHI The HA16113FPJ is a multifunction device that provides m icroprocessor system s with the necessary regulated power supply, monitors the supply voltage, and generates power-on reset and


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    HA16113FPJ HA16113FPJ 493/HIB/PM M61T035 PDF

    crt 1700

    Abstract: transistor 2sk 2SC2611 transistor 2sd2300 2sc2610 2SC4747 2sc4367 2SC4896 2SC4927 2SD1094
    Text: 25 HITACHI Table 17 : Power Switching Transistors Range Cont'd Typical Electrical Characteristics Absolute Maximum Ratings Package T0-3P-FM TO-3 Type Number 2SC4589 2SC4692 2SC4744 2SC4745 2SC4746 2SC4747 2SC4796 2SC4797 2SC4877 2SC4878 2SC4879 2SD2299 2SD2300


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    2SC4589 2SC4692 2SC4744 2SC4745 2SC4746 2SC4747 2SC4796 2SC4797 2SC4877 2SC4878 crt 1700 transistor 2sk 2SC2611 transistor 2sd2300 2sc2610 2SC4747 2sc4367 2SC4896 2SC4927 2SD1094 PDF

    2SJ56 2sk176

    Abstract: 2sJ50 mosfet Hitachi 2sk176 2sj56 2SK176 2sk133 2Sj48 2sk1058 2SJ162 transistor 2sj162 2SJ56 2SJ56 HITACHI 2SK1058 MOSFET
    Text: HITACHI 5 1.4 S-Series for Power Amplifiers output stages can easily be designed just by connecting extra power MOSFETs in parallel. This flexibility arises from th e p o sitiv e temperature coefficient of the pow er MOSFET, which gives the transistor the ability to share


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    2SK176 2SJ56 2SK220 2SK221 2SK258 2SK259 2SK260 2SK1056 2SJ56 2sk176 2sJ50 mosfet Hitachi 2sk176 2sj56 2sk133 2Sj48 2sk1058 2SJ162 transistor 2sj162 2SJ56 HITACHI 2SK1058 MOSFET PDF

    2SC2820

    Abstract: 2SD1094 2SC2819 2SC4739 2SC4589 2SC4692 2SC4744 2SC4745 2SC4746 2SC4747
    Text: 25 HITACHI Table 17 : Power Switching Transistors Range Cont'd Typical Electrical Characteristics Absolute Maximum Ratings Package Type Number 2SC4589 2SC4692 2SC4744 VCEO V (V) 12 . 1500 800 2SC4747 2SC4796 T0-3P-FM 2SC4797 900 1700 2SC4878 ' 2SC4879 2SD2299


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    2SC4589 2SC4692 2SC4744 2SC4745 2SC4746 2SC4747 2SC4796 2SC4797 2SC4877 2SC4878 2SC2820 2SD1094 2SC2819 2SC4739 2SC4692 2SC4744 2SC4745 2SC4747 PDF

    Untitled

    Abstract: No abstract text available
    Text: HITACHI 2SC4807-Silicon NPN Bipolar Transistor Application UPAK VHF & UHF wide band amplifier Features 1 • High gain bandwidth product f-j- = 4.4 GHz typ • High output power 1 dB Power compression point, Pep = 24 dBm typ at VCE = 5V , I c = 100 mA , f = 900 MHz


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    2SC4807-----Silicon PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SD2423 Silicon NPN Epitaxial, Darlington HITACHI Application Low frequency power amplifier Features The transistor with a built-in zener diode o f surge absorb. Outline UPAK 2 ,4 1. 2. 3. 4. 1006 Base Collector Emitter Collector Flange (Typ) (Typi ¿ 3


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    2SD2423 PDF

    2sc2899 transistor

    Abstract: 2SC4739 2SD1527 2SB566 2SB566A 2SC2612 2SC2613 2SC2816 2SC2898 2SC2899
    Text: 24 HIT ACH I/ O P T O E L E C T R O N I C S blE ]> • 44^205 0013776 TO? ■ HIT4 HITACHI 4. Power Bipolar Transistors 4.1 Introduction This power bipolar transistor line-up contains data on the range of Hitachi's discrete devices for applications in industrial, automotive, computer and consumer equipment.


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    44TbSDS 2SC4589 2SC4692 2SC4744 2SC4745 2SC474Ã 2SC4747 2SC4796 2SC4797 2SC4877 2sc2899 transistor 2SC4739 2SD1527 2SB566 2SB566A 2SC2612 2SC2613 2SC2816 2SC2898 2SC2899 PDF

    2SJ299

    Abstract: mosfet 740 2SJ292 2sj298 2SJ294 2SJ295 2SJ317 2SJ278 2SJ279 2SJ290
    Text: HITACHI 1.5.4 13 New DIV-L Series The characteristics of todays power MOSFETs continue to improve as costs drop, resulting in the broader application of these devices in place of bipolar transistors. • 2.5V and 4V gate drive device • High speed switching 30% reduction in


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    packag45 2SK1910 2SK1911 2SJ293 2SJ294 T0-220FM 2SJ295 2SK1951 2SK1952 2SJ296 2SJ299 mosfet 740 2SJ292 2sj298 2SJ295 2SJ317 2SJ278 2SJ279 2SJ290 PDF