hitachi mbm400e25e
Abstract: MBM400E25
Text: IGBT MODULE Spec.No.IGBT-SP-10007 R0 P1 MBM400E25E Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode.
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IGBT-SP-10007
MBM400E25E
000cycles)
hitachi mbm400e25e
MBM400E25
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-10007 R1 P1 MBM400E25E Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.
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Original
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PDF
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IGBT-SP-10007
MBM400E25E
000cycles)
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-10007 R1 P1 MBM400E25E Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.
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Original
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PDF
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IGBT-SP-10007
MBM400E25E
000cycles)
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mbm150gr12
Abstract: MBN1200D33A C2E1 MBM300GS12A 5252 F 1002 MDN1200D33 m8nd mbm200js12ew MBM800E17D mbn1200e25c igbt
Text: Status List Date:Sept. 2010 Compliance status of RoHS directive C:Compliant S.C:Compliant N:Non compliant Included RoHS exemption substance Production Status M:Mass production W:Working sample D:Discontinued High-Voltage High-Power Series Electrical Characteristics
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MBN1200E17D
MBN1600E17D
MBN1800E17D
KS10004
mbm150gr12
MBN1200D33A
C2E1
MBM300GS12A
5252 F 1002
MDN1200D33
m8nd
mbm200js12ew
MBM800E17D
mbn1200e25c igbt
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