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    HITACHI 28 PIN SOJ PACKAGE DIMENSIONS Search Results

    HITACHI 28 PIN SOJ PACKAGE DIMENSIONS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    HITACHI 28 PIN SOJ PACKAGE DIMENSIONS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IC51-128

    Abstract: transistor fpq 630 PC-68 TTP-48DF OF IC 7421 Enplas fpq Enplas PT740 AB am fm radio Hitachi DSAUTAZ005
    Text: Hitachi Semiconductor Package Data Book Introduction Contents Section 1 Introduction of Packages 1.1 Types of Packages and Advantages 1.2 IC Package Name and Code Indication 1.3 Method of Indicating IC Package Dimensions 1.4 Lineups in Terms of Shapes and Materials


    Original     		PDF

    DATA SHEET OF IC 317

    Abstract: Test-Element-Group Thermal Test-Element-Group hitachi ic hitachi HM514256 HM514256 28-pin SOJ SRAM high speed thyristor HM62256 Reliability of Hitachi IC Memories
    Text: Reliability of Hitachi IC Memories Contents 1. Structure 2. Reliability 3. Reliability of Semiconductor Devices Reliability of Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern,


    Original     		PDF

    77106

    Abstract: CRACK DETECTION PATTERNS HM628128 reliability test data cbv 2 10910 statistical Physics Hitachi DSA00503
    Text: Reliability of Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.


    Original     		PDF

    HM62W8201HLJP-12

    Abstract: Hitachi DSA00164
    Text: HM62W8201H Series 16M High Speed SRAM 2-Mword x 8-bit ADE-203-955A (Z) Preliminary Rev. 0.1 May. 28, 1999 Description The HM62W8201H Series is an asynchronous high speed static RAM organized as 2-Mword × 8-bit. It has realized high speed access time by employing the most advanced CMOS process and high speed circuit


    Original     		PDF HM62W8201H ADE-203-955A 44-pin 36-pin ns/12 ns/15 HM62W8201H-10 HM62W8201HJP/HLJP HM62W8201HLJP-12 Hitachi DSA00164

    Untitled

    Abstract: No abstract text available
    Text: HM62W8127H Series HM62W9127H Series 131072-word x 8/9-bit High Speed CMOS Static RAM HITACHI Rev. 0.0 Dec. 1, 1995 Description The HM62W8127H/HM62W9127H is an asynchronous 3.3 V operation high speed static RAM organized as 131,072-word 8/9-bit. It realize high speed access time 30/35/45 ns with employing 0.8 (Am CMOS


    OCR Scan     		PDF HM62W8127H HM62W9127H 131072-word HM62W8127H/HM62W9127H 072-word 400-mil 32/36-pin HM62W8127HJP/HLJP

    Untitled

    Abstract: No abstract text available
    Text: HM62W8127H Series HM62W9127H Series 131072-word x 8/9-bit High Speed CMOS Static RAM HITACHI Rev. 0.0 Dec. 1, 1995 Description The HM62W8127H/HM62W9127H is an asynchronous 3.3 V operation high speed static RAM organized as 131,072-word X 8/9-bit. It realize high speed access time 30/35/45 ns with employing 0.8 (Am CMOS


    OCR Scan     		PDF HM62W8127H HM62W9127H 131072-word HM62W8127H/HM62W9127H 072-word 400-mil 32/36-pin HM62W8127HJP/HLJP

    Untitled

    Abstract: No abstract text available
    Text: HM624256A Series 262144-word x 4-bit High Speed CMOS Static RAM HITACHI Rev. 0.0 Dec. 1, 1995 Description The Hitachi HM624256A is a high speed 1M Static RAM organized as 262,144-word x 4-bit. It realizes high speed access time 20/25/35 ns and low power consumption, employing CMOS process technology


    OCR Scan     		PDF HM624256A 262144-word 144-word 32-bit HM624256A, 400-mil 28-pin HM624256AP/ALP

    F31Z

    Abstract: 922z
    Text: HM62W8127H Series HM62W9127H Series 131072-word x 8/9-bit High Speed CMOS Static RAM HITACHI Description The HM62W8127H/HM62W9127H is an asynchronous 3.3 V operation high speed static RAM organized as 131,072-word x 8/9-bit. It realize high speed access time 30/35/45 ns with employing 0.8 fim CMOS


    OCR Scan     		PDF HM62W8127H HM62W9127H 131072-word HM62W8127H/HM62W9127H 072-word 400-mil 32/36-pin 8127HJP/HLJP F31Z 922z

    Untitled

    Abstract: No abstract text available
    Text: HM5117805 Series 2,097,152-word x 8-bit Dynamic RAM HITACHI ADE-203-630B Z Rev. 2.0 Nov. 8, 1996 Description The Hitachi HM5117805 is a CMOS dynamic RAM organized 2,097,152-word X 8-bits. It uses the most advanced CMOS technology for high performance and low power. The HM5117805 offers extended data


    OCR Scan     		PDF HM5117805 152-word ADE-203-630B 28-pin ns/60

    Untitled

    Abstract: No abstract text available
    Text: HM5117805 Series 2,097,152-word x 8-bit Dynamic RAM HITACHI ADE-203-630B Z Rev. 2.0 Nov. 8, 1996 Description The Hitachi HM5117805 is a CMOS dynamic RAM organized 2,097,152-word x 8-bits. It uses the most advanced CMOS technology for high performance and low power. The HM5117805 offers extended data


    OCR Scan     		PDF HM5117805 152-word ADE-203-630B 28-pin ns/60

    Untitled

    Abstract: No abstract text available
    Text: HM62W4100H Series 1048576-word x 4-bit High Speed CMOS Static RAM HITACHI ADE-203-774 Z Preliminary Rev. 0.0 Apr. 28, 1997 Description The HM62W4100H is an asyncronous high speed static RAM organized as 1-Mword x 4-bit. It has realized high speed access time (10/12/15 ns) with employing 0.35 (im CMOS process and high speed circuit


    OCR Scan     		PDF HM62W4100H 1048576-word ADE-203-774 400-mil 32-pin ns/12 ns/15 D-85622

    flash 32 Pin PLCC 16mbit

    Abstract: 398x
    Text: Reliability o f Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: HM62W1400H Series 4194304-word x 1-bit High Speed CMOS Static RAM HITACHI ADE-203-773 Z Preliminary Rev. 0.0 Apr. 28, 1997 Description The HM62W1400H is an asynchronous high speed static RAM organized as 4-Mword x 1-bit. It has realized high speed access time (10/12/15 ns) with employing 0.35 (im CMOS process and high speed


    OCR Scan     		PDF HM62W1400H 4194304-word ADE-203-773 400-mil 32-pin ns/12 ns/15

    ZUA15

    Abstract: ZUA12
    Text: HM62W1400H Series 4194304-word x 1-bit High Speed CMOS Static RAM HITACHI ADE-203-773 Z Preliminary Rev. 0.0 Apr. 28, 1997 Description The HM62W1400H is an asyncronous high speed static RAM organized as 4-Mword x 1-bit. It has realized high speed access time (10/12/15 ns) with employing 0.35 (Am CMOS process and high speed circuit


    OCR Scan     		PDF HM62W1400H 4194304-word ADE-203-773 400-mil 32-pin ns/12 ns/15 D-85622 ZUA15 ZUA12

    CBV2

    Abstract: HN27C301
    Text: Reliability of Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.


    OCR Scan     		PDF

    17805T

    Abstract: 51W17805 51w17805j
    Text: HM51W17805 Series 2,097,152-word x 8-bit Dynamic RAM HITACHI ADE-203-631B Z Rev. 2.0 Nov. 12, 1996 Description The Hitachi HM51W17805 is a CMOS dynamic RAM, organized 2,097,152-words x 8-bits. It employs the most advanced CMOS technology for high performance and low power consumption. The HM51W17805


    OCR Scan     		PDF HM51W17805 152-word ADE-203-631B 152-words 28-pin ns/60 17805T 51W17805 51w17805j

    Untitled

    Abstract: No abstract text available
    Text: HM62W4100H Series 4M High Speed SRAM 1-Mword x 4-bit HITACHI ADE-203-774A (Z) Preliminary, Rev. 0.1 Nov. 20, 1997 Description The HM62W4100H is an asynchronous high speed static RAM organized as 1-Mword x 4-bit. It has realized high speed access time (10/12/15 ns) with employing 0.35 (Am CMOS process and high speed


    OCR Scan     		PDF HM62W4100H ADE-203-774A 400-mil 32-pin ns/12 ns/15

    HM629127HLJP-20

    Abstract: HM629127H HM629127HJP-20 HM629127HJP-25 HM629127HLJP-25 Hitachi Scans-001
    Text: HM629127H Series 131072-word x 9-bit High Speed CMOS Static RAM HITACHI Rev. 0.0 Dec. 1, 1995 Description The HM629127H is an asynchronous high speed static RAM organized as 131,072-word X 9-bit. It realizes high speed access time 20/25 ns with employing 0.8 (Am CMOS process and high speed circuit designing


    OCR Scan     		PDF HM629127H 131072-word 072-word 400-mil 32/36-pin HM629127HLJP-20 HM629127HJP-20 HM629127HJP-25 HM629127HLJP-25 Hitachi Scans-001

    zua11

    Abstract: No abstract text available
    Text: HM62W8511H Series 524288-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-750 Z Preliminary Rev. 0.0 Feb. 27,1997 Description The HM62W8511H is an asynchronous high-speed static RAM organized as 512-kword x 8-bit. It achieves high-speed access time (10/12/15 ns) through 0.35 )J.m CMOS process and high-speed circuit designing


    OCR Scan     		PDF HM62W8511H 524288-word ADE-203-750 512-kword 400-mil 36-pin ns/12 ns/15 zua11

    5118160

    Abstract: No abstract text available
    Text: HM5116160 Series HM5118160 Series 1048576-word x 16-bit Dynamic RAM HITACHI ADE-203-634D Z Rev. 4.0 Jun. 25, 1997 Description The Hitachi HM5116160 Series, HM5118160 Series are CMOS dynamic RAMs organized as 1,048,576word x 16-bit. They employ the most advanced CMOS technology for high performance and low power.


    OCR Scan     		PDF HM5116160 HM5118160 1048576-word 16-bit ADE-203-634D 576word 16-bit. 5118160

    Untitled

    Abstract: No abstract text available
    Text: HM62W1400H Series 4M High Speed SRAM 4-Mword x 1-bit HITACHI ADE-203-773A (Z) Preliminary, Rev. 0.1 Nov. 20, 1997 Description The HM62W1400H is an asynchronous high speed static RAM organized as 4-Mword X 1-bit. It has realized high speed access time (10/12/15 ns) with employing 0.35 Jim CMOS process and high speed


    OCR Scan     		PDF HM62W1400H ADE-203-773A 400-mil 32-pin ns/12 ns/15

    TI410

    Abstract: No abstract text available
    Text: HM62W16255H Series 4M High Speed SRAM 256-kword x 16-bit HITACHI ADE-203-751A (Z) Preliminary, Rev. 0.1 Nov. 20, 1997 Description The HM 62W 16255H is an asynchronous high speed static RAM organized as 256-kword X 16-bit. It has realized high speed access tim e (10/12/15 ns) with employing 0.35 Jim CMOS process and high speed


    OCR Scan     		PDF HM62W16255H 256-kword 16-bit) ADE-203-751A 16255H 16-bit. 400-mil 44-pin TI410

    m5118160

    Abstract: m51161 S-024BB
    Text: HM5116160 Series HM5118160 Series 1048576-word x 16-bit Dynamic RAM HITACHI ADE-203-634D Z Rev. 4.0 Jun. 25, 1997 Description The Hitachi HM5116160 Series, HM 5118160 Series are CMOS dynamic RAMs organized as 1,048,576word X 16-bit. They employ the most advanced CMOS technology for high performance and low power.


    OCR Scan     		PDF HM5116160 HM5118160 1048576-word 16-bit ADE-203-634D 576word 16-bit. 42-pin m5118160 m51161 S-024BB

    Untitled

    Abstract: No abstract text available
    Text: HM62W16255H Series 4M High Speed SRAM 256-kword x 16-bit HITACHI ADE-203-751A (Z) Preliminary, Rev. 0.1 Nov. 20, 1997 Description The HM62W16255H is an asynchronous high speed static RAM organized as 256-kword x 16-bit. It has realized high speed access time (10/12/15 ns) with employing 0.35 (Am CMOS process and high speed


    OCR Scan     		PDF HM62W16255H 256-kword 16-bit) ADE-203-751A 16-bit. 400-mil 44-pin