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    HITACHI 28 PIN PLASTIC SOJ PACKAGE Search Results

    HITACHI 28 PIN PLASTIC SOJ PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    HITACHI 28 PIN PLASTIC SOJ PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DATA SHEET OF IC 317

    Abstract: Test-Element-Group Thermal Test-Element-Group hitachi ic hitachi HM514256 HM514256 28-pin SOJ SRAM high speed thyristor HM62256 Reliability of Hitachi IC Memories
    Text: Reliability of Hitachi IC Memories Contents 1. Structure 2. Reliability 3. Reliability of Semiconductor Devices Reliability of Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern,


    Original     		PDF

    IC Package Names and Code Designations

    Abstract: data sheet IC 7408 7404 not gate ic MSP 044 THERMISTOR enplas otq-100-0.5 IC 7404 7406 IC51-1004-809 ic 7404 datasheet HLP40R ic 7408
    Text: Hitachi Semiconductor Package DATA BOOK ADE 410-001A Introduction Thank you for using Hitachi’s semiconductor devices. The growing market for electronic equipment requires mounting semiconductor devices with higher functional capacity and higher density and developing packages


    Original     		PDF 10-001A IC Package Names and Code Designations data sheet IC 7408 7404 not gate ic MSP 044 THERMISTOR enplas otq-100-0.5 IC 7404 7406 IC51-1004-809 ic 7404 datasheet HLP40R ic 7408

    IC51-128

    Abstract: transistor fpq 630 PC-68 TTP-48DF OF IC 7421 Enplas fpq Enplas PT740 AB am fm radio Hitachi DSAUTAZ005
    Text: Hitachi Semiconductor Package Data Book Introduction Contents Section 1 Introduction of Packages 1.1 Types of Packages and Advantages 1.2 IC Package Name and Code Indication 1.3 Method of Indicating IC Package Dimensions 1.4 Lineups in Terms of Shapes and Materials


    Original     		PDF

    HT 1200-4

    Abstract: YAMAICHI ic234 PT740 AB TSSOP YAMAICHI SOCKET FP-20-0.65-01 IC51-1444-1354-7 PT817 Enplas drawings IC51-2084-1052-11 IC 7418 IC51-0242-1341
    Text: Hitachi Semiconductor Package Data Book ADE–410–001B 3rd Edition March/97 Semiconductor & Integrated Circuit Devision, Hitachi, Ltd. Introduction Thank you for using Hitachi’s semiconductor devices. The growing market for electronic equipment requires mounting semiconductor devices with higher functional


    Original     		PDF March/97 HT 1200-4 YAMAICHI ic234 PT740 AB TSSOP YAMAICHI SOCKET FP-20-0.65-01 IC51-1444-1354-7 PT817 Enplas drawings IC51-2084-1052-11 IC 7418 IC51-0242-1341

    HT 1200-4

    Abstract: IC51-2084-1052-11 IC51-0242-1341 YAMAICHI ic234 transistor fpq 630 IC51-0404-1511 fpq-144-0.5-03 648-0482211-A01 IC189 Series Open Top SOP, SSOP, TSOP Type I a HLQFP 176 Package drawing
    Text: Hitachi Semiconductor Package Data Book ADE–410–001C 4th Edition March/98 Semiconductor & Integrated Circuit Devision, Hitachi, Ltd. Introduction Thank you for using Hitachi’s semiconductor devices. The growing market for electronic equipment requires mounting semiconductor devices with higher


    Original     		PDF March/98 intern844-347360 HT 1200-4 IC51-2084-1052-11 IC51-0242-1341 YAMAICHI ic234 transistor fpq 630 IC51-0404-1511 fpq-144-0.5-03 648-0482211-A01 IC189 Series Open Top SOP, SSOP, TSOP Type I a HLQFP 176 Package drawing

    77106

    Abstract: CRACK DETECTION PATTERNS HM628128 reliability test data cbv 2 10910 statistical Physics Hitachi DSA00503
    Text: Reliability of Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.


    Original     		PDF

    PT740 AB

    Abstract: diode AE 84A KS74 FP64E hitachi FET EDR-7316 Hitachi DSAUTAZ006 IC51-2084-1052 OTS-48
    Text: Hitachi Semiconductor Package Data Book ADE–410–001G 8th Edition September/2000 Semiconductor & Integrated Circuits Hitachi, Ltd. Introduction Thank you for using Hitachi’s semiconductor devices. The growing market for electronic equipment requires mounting semiconductor devices with higher


    Original     		PDF September/2000 PT740 AB diode AE 84A KS74 FP64E hitachi FET EDR-7316 Hitachi DSAUTAZ006 IC51-2084-1052 OTS-48

    HM511000J

    Abstract: No abstract text available
    Text: • 44C,b2D3 nonni =i2s «hits HB56D236B S eries 2,097,152-Word x 36-Bit High Density Dynamic RAM Module ■ DESCRIPTION The HB56D236B is a 2M x 36 dynamic RAM module, mounted 16 pieces of 4 Mbit DRAM HM514400JP sealed in SOJ package and 8 pieces of 1 Mbit DRAM


    OCR Scan     		PDF HB56D236B 152-Word 36-Bit HM514400JP) HM511000AJP) 72-pin HM511000J

    HB56A19B

    Abstract: HB56A19B8A zp 1401 HB56A19B10A SIMM 30-pin HB56A19A-12 HB56A19A-12A HB56A19
    Text: HB56A19 Series 1,048,576-Word x 9-Bit High Density Dynamic RAM Module • DESCRIPTION The HB56A19 is a 1M x 9 dynamic RAM module, mounted nine 1-Mbit DRAM HM511000JP sealed in SOJ package. An outline of the HB56A19 is 30-pin single in-line package having Lead types (HB56A19A, HB56A19AT), Socket type


    OCR Scan     		PDF HB56A19 576-Word HM511000JP) 30-pin HB56A19A, HB56A19AT) HB56A19B) HB56A19B HB56A19B8A zp 1401 HB56A19B10A SIMM 30-pin HB56A19A-12 HB56A19A-12A

    Untitled

    Abstract: No abstract text available
    Text: HM5117805 Series 2,097,152-word x 8-bit Dynamic RAM HITACHI ADE-203-630B Z Rev. 2.0 Nov. 8, 1996 Description The Hitachi HM5117805 is a CMOS dynamic RAM organized 2,097,152-word X 8-bits. It uses the most advanced CMOS technology for high performance and low power. The HM5117805 offers extended data


    OCR Scan     		PDF HM5117805 152-word ADE-203-630B 28-pin ns/60

    Untitled

    Abstract: No abstract text available
    Text: HM5117805 Series 2,097,152-word x 8-bit Dynamic RAM HITACHI ADE-203-630B Z Rev. 2.0 Nov. 8, 1996 Description The Hitachi HM5117805 is a CMOS dynamic RAM organized 2,097,152-word x 8-bits. It uses the most advanced CMOS technology for high performance and low power. The HM5117805 offers extended data


    OCR Scan     		PDF HM5117805 152-word ADE-203-630B 28-pin ns/60

    HB56A18B-8A

    Abstract: SIMM 30-pin HB56A18B HB56A18AT-6H "30 pin simm" 30-pin SIMM RAM 30 pin SIMM socket HB56A18B8A zp 1401 we221
    Text: HB56A18 Series 1,048,576-Word x 8-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN DESCRIPTION The HB56A18 Is a 1M x 8 dynamic RAM module, mounted eight 1-Mbit DRAM HM 511000JP sealed in SOJ package. An outline of the H B56A18 is 30-pin single


    OCR Scan     		PDF HB56A18 576-Word HM511000JP) 30-pin HB56A18A, HB56A18AT) HB56A18B) HB56A18B-8A SIMM 30-pin HB56A18B HB56A18AT-6H "30 pin simm" 30-pin SIMM RAM 30 pin SIMM socket HB56A18B8A zp 1401 we221

    Untitled

    Abstract: No abstract text available
    Text: H B 5 6 C 1 9 S e r i e s - 1,048,576-Word x 9-Bit High Density Dynamic RAM Module • PIN DESCRIPTION ■ DESCRIPTION The HB56C19 is a 1M x 9 static column mode dynamic RAM module, mounted nine 1-Mbit DRAM HM511002JP sealed in SOJ package. An outline of the


    OCR Scan     		PDF 576-Word HB56C19 HM511002JP) 30-pin HB56C19A, HB56C19AT) HB56C19B)

    hitachi 28 pin plastic soj package

    Abstract: No abstract text available
    Text: HM621100A Series 1048576-word x 1-bit High Speed CMOS Static RAM HITACHI Description The Hitachi HM621100A is a high speed 1M Static RAM organized as 1048576-word X 1-bit. It realizes high speed access time 20/25/35 ns and low power consumption, employing CMOS process technology and


    OCR Scan     		PDF HM621100A 1048576-word 32-bit HM621100A, 400-mil 28-pin 1100A hitachi 28 pin plastic soj package

    Untitled

    Abstract: No abstract text available
    Text: HB56C18 S eries-1,048,576-Word x 8-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN DESCRIPTION The HB56C1B is a 1M x 8 static column mode dynamic RAM module, mounted eight 1-Mbit DRAM HM511002JP sealed in SOJ package. An outline of the


    OCR Scan     		PDF HB56C18 576-Word HB56C1B HM511002JP) 30-pin HB56C18A, HB56C18AT) HB56C18B)

    Untitled

    Abstract: No abstract text available
    Text: HM67A4101 Series Under development 1048576-words x 4-bits I/O Separate Clocked Random A ccess Memory Pin Arrangement Features • 1048576-words x 4-bits organization • Directly TTL compatible input and output • C hoice o f 5.0 V or 3.3 V pow er supplies for


    OCR Scan     		PDF HM67A4101 1048576-words ns/18 HM67A4101JP-15 36-pin HM67A4101JP-1 A0-A19

    Untitled

    Abstract: No abstract text available
    Text: HM67A4101 Series Under development 1048576-words x 4-bits I/O Separate Clocked Random Access Memory Pin Arrangement Features • 1048576-words x 4-bits organization • Directly TTL compatible input and output • Choice o f 5.0 V or 3.3 V power supplies for


    OCR Scan     		PDF HM67A4101 1048576-words ns/18 A0-A19

    17805T

    Abstract: 51W17805 51w17805j
    Text: HM51W17805 Series 2,097,152-word x 8-bit Dynamic RAM HITACHI ADE-203-631B Z Rev. 2.0 Nov. 12, 1996 Description The Hitachi HM51W17805 is a CMOS dynamic RAM, organized 2,097,152-words x 8-bits. It employs the most advanced CMOS technology for high performance and low power consumption. The HM51W17805


    OCR Scan     		PDF HM51W17805 152-word ADE-203-631B 152-words 28-pin ns/60 17805T 51W17805 51w17805j

    HM51428

    Abstract: No abstract text available
    Text: HM514280A/AL, HM51S4280A/AL Series Preliminary 262,144-Word x 18-Bit Dynamic Random Access Memory • DESCRIPTION ■ FEATURES The Hitachi HM514280A/AL are CMOS dynamic RAM organized as 262,144-word x 18-bit. HM514280A/AL have realized higher density, higher performance and various


    OCR Scan     		PDF HM514280A/AL, HM51S4280A/AL 144-Word 18-Bit HM514280A/AL 18-bit. HM51428

    Untitled

    Abstract: No abstract text available
    Text: HM62W8127H Series HM62W9127H Series Preliminary 131072-word x 8/9-bit High Speed CMOS Static RAM T he H M 62W 8127H /H M 62W 9127H is an asyncronous 3.3 V operation high speed static RAM organized as 128 kword x 8/9 bit. It realize high speed access tim e 25/30/35/45 ns with


    OCR Scan     		PDF HM62W8127H HM62W9127H 131072-word 8127H 9127H HM62W8127H/HM62W9127H 400-mil 32/36-pin

    Untitled

    Abstract: No abstract text available
    Text: HM514800C/CL Series HM51S4800C/CL Series 524,288-word x 8-bit Dynamic Random Access Memory H I T A The H itachi H M 514800C are CM OS dynam ic R A M o rg a n iz e d as 5 2 4 ,2 8 8 -w o rd x 8 -b it. HM514800C have realized higher density, higher performance and various functions by employing


    OCR Scan     		PDF HM514800C/CL HM51S4800C/CL 288-word 514800C HM514800C 400-mil 28-pin 400-mil

    HM514270AJ8

    Abstract: No abstract text available
    Text: HM514270A/AL, HM51S4270A/AL Series 262,144-Word X 16-Bit Dynamic Random Access Memory • DESCRIPTION ■ FEATURES The Hitachi HM514270A/AL are CMOS dynamic RAM or­ ganized as 262,144-word x 16-bit. HM514270A/AL have re­ alized higher density, higher performance and various func­


    OCR Scan     		PDF HM514270A/AL, HM51S4270A/AL 144-Word 16-Bit HM514270A/AL 16-bit. HM514270AJ8

    Untitled

    Abstract: No abstract text available
    Text: HM62W1664H Series HM62W1864H Series P r e lim in a r y 65536-word x 16/18-bit High Speed CMOS Static RAM T h e H M 6 2 W 1 6 6 4 H /H M 6 2 W 1 8 6 4 H is an asyncronous 3.3 V operation high speed static RAM organized as 64 kword x 16/18 bit. It realize h ig h sp eed access tim e 2 5 /3 0 /3 5 /4 5 ns w ith


    OCR Scan     		PDF HM62W1664H HM62W1864H 65536-word 16/18-bit 1664H 1864H 400-mil 44-pin 1664HJP-25 1664Hto

    62256 hitachi

    Abstract: 28 pin plastic dip hitachi dimension hitachi PLC
    Text: Reliability of Hitachi 1C Memories 1. Structure The dies of IC memories are encapsulated in various packages. The most common packages are plastic and cerdip. Plastic packages are widely used in many different types of equipment. Cerdip packaging is especially suitable in equipment


    OCR Scan     		PDF