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    HIT 215 Search Results

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    Untitled

    Abstract: No abstract text available
    Text: CNCONNECTOR High frequency connectors HIT Features ●Crimping method and shape AIT Shielding meshed wires are crimped with the N-type crimp shape, which prevents the deflection and coming off of the meshed wires. HCM ●Superb high-frequency characteristics


    Original     		PDF CN-SAS1290 BCM-61T-4 SCM-61T-4 MP-CN-BCM61 MP-CN-SCM61

    6bb1

    Abstract: No abstract text available
    Text: SETS-LC ACS8515 SETS Protection Switch for Line Cards ADVANCED COMMUNICATIONS PRELIMINARY Features Description The ACS8515 is a highly integrated, single-chip solution for "hit-less" protection switching of SEC clocks from Master and Slave SETS clock cards in a


    Original     		PDF ACS8515 100nF ACS8515 6bb1

    Untitled

    Abstract: No abstract text available
    Text: HITCONNECTOR Board-to-wire HIT Features ●Multi-circuit structure, Miniaturized AIT Current products available are up to 180-circuit. Although this connector is multi-circuit, it was miniaturized by narrow pitch. The insertion force in the mating operation of one time is


    Original     		PDF 180-circuit. SNAC3-A021T-M0 SNAC3-A031T-M0 SNAC-A061T-M2 SNAC-A081T-M2 SNAC-A091T-M2 MK/SNAC3-A021-064 MK/SNAC3-A031-064 MK/SNAC-A061-28 MK/SNAC-A081-28

    Untitled

    Abstract: No abstract text available
    Text: HITCONNECTOR Board-to-wire HIT Features ●Multi-circuit structure, Miniaturized AIT Current products available are up to 180-circuit. Although this connector is multi-circuit, it was miniaturized by narrow pitch. The insertion force in the mating operation of one time is


    Original     		PDF 180-circuit. SNAC3-A021T-M0 SNAC3-A031T-M0 SNAC-A061T-M2 SNAC-A081T-M2 SNAC-A091T-M2 MK/SNAC3-A021-064 MK/SNAC3-A031-064 MK/SNAC-A061-28 MK/SNAC-A081-28

    transistor b941

    Abstract: transistor b561 transistor b1416 B941 b1416 B2269 data transistor type bf 224 242557 transistor bf 244 B1321
    Text: Pentium PROCESSORS AT iCOMP INDEX 735T90 610T75 MHz WITH VOLTAGE REDUCTION TECHNOLOGY SmartDie TM Product Specification Y Compatible with Large Software Base MS-DOS Windows OS 2 UNIX Y 4 Mbyte Pages for Increased TLB Hit Rate Y 32-Bit CPU with 64-Bit Data Bus


    Original     		PDF 735T90 610T75 32-Bit 64-Bit X805025075 X805026090 AP-479 AP-480 transistor b941 transistor b561 transistor b1416 B941 b1416 B2269 data transistor type bf 224 242557 transistor bf 244 B1321

    what is cache memory

    Abstract: emcp 603EV
    Text: Cache What you will Learn Cache • What are the 603ev caches? • How the caches process fetch, load, and store • What is write-through and write-back? • What is snooping? • How data cache processes a snoop hit • How to enable cache from hard reset


    Original     		PDF 603ev what is cache memory emcp

    catalogue

    Abstract: jigo products SCR 131- 6 WJ 59 SCR 131- 6 WJ 69 SCR 131- 6 WJ 68 SCR 131- 6 WJ 60 LC1-D32 SCR 131- 6 WJ 67 SCR 131- 6 WJ 65 ST3PA
    Text: JiGO PRODUCTS CATALOGUE it all began in 1987…. The founder hit upon the electrical business in 1987 in the financial hub of eastern India, Kolkata. In midst of severe competition and tough markets, their values and committment towards quality and customer service set them apart from


    Original     		PDF JG-GV3-M06 JG-GV3-M07 JG-GV3-M08 JG-GV3-M10 JG-GV3-M14 JG-GV3-M20 JG-GV3-M25 JG-GV3-M40 JG-GV3-M63 JG-GV3-M80 catalogue jigo products SCR 131- 6 WJ 59 SCR 131- 6 WJ 69 SCR 131- 6 WJ 68 SCR 131- 6 WJ 60 LC1-D32 SCR 131- 6 WJ 67 SCR 131- 6 WJ 65 ST3PA

    2454 transistor

    Abstract: IN 5358 IT 245 transistor 1047 SmartDie transistor y-217 gel 335 tms 374 X8050360150 243292
    Text: Preliminary Mobile Pentium Processor with MMX Technology SmartDie® Product Specification • Support for MMX™ Technology ■ Low Voltage CMOS Silicon Technology ■ Compatible with Large Software Base ■ 4 Mbyte Pages for Increased TLB Hit — MS-DOS*, Windows*, OS/2*, UNIX*


    Original     		PDF 32-Bit 64-Bit X8050366166 X8050360150 2454 transistor IN 5358 IT 245 transistor 1047 SmartDie transistor y-217 gel 335 tms 374 X8050360150 243292

    hit 215

    Abstract: No abstract text available
    Text: e E S A E L E R E PR HIT 1920-10 PTE 31042* 10 Watts, 1.9–2.0 GHz 50-Ohm Power Hybrid Description • The 1920-10 is a 50–ohm power hybrid intended for applications requiring linear power amplification in the PCS frequency range. The part is designed to operate with 50–ohm source and load impedances


    Original     		PDF 50-Ohm 1-877-GOLDMOS 1301-PTE hit 215

    79015P

    Abstract: 74HC14T ria PD6 sf hd62 xo 403 me 4Z701 KC332 R36118 ad 0803 pc dio-48
    Text: Mainboard 1 of 33 HA#[3.31] 3,5 24 24 ST PCLK# SLP# INT R NMI 5 8,10 10 T CK T DO T DI T MS T RST # T PREQ# T PRDY# RS#[0.2] 24 A20M# CPU_FERR# 24 IGNNE# PW RGOOD 10 SMI# HT RDY# HIT # HITM# DEFER# 3,5 3,5 3,5 3,5 BREQ0# BPRI# BNR# HLOCK# ADS# V_CPU R579


    Original     		PDF 1000P CORE/13A PK/15A I3443 1005-4R 71-31C 79015P 74HC14T ria PD6 sf hd62 xo 403 me 4Z701 KC332 R36118 ad 0803 pc dio-48

    a15 csa 100u 27p

    Abstract: CLEVO SK TME 86 LAN-RTL8193C RA27E 74hc141 vt82c686a 78l05 so8 RTL819 VT82C694A
    Text: Part 6: Schematics Part 6: Schematics 6–1 Service Manual V TT V TT 3 HA #[3.31] HA #[3.31] 3 HRE Q#[0.4] R8 20K 3,7,12 P WROK P WROK R7 AK 18 A H16 A H18 AL19 AL17 3 ADS# ADS# A N31 3 3 3 3 B RE Q0# B PRI# BNR# HLOCK# 3 3 3 HIT# HITM# DEFER# R367 330 R


    Original     		PDF

    U10A-14

    Abstract: U11A-8 CQX 86 512kx8 dram simm cqx 87 u12A U11C U832 U12A-14 u318
    Text: DM512K64DT6/DM512K72DT6 Multibank EDO EDRAM 512Kb x 64/512Kb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features • 8Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache ■ Fast 4Mbyte DRAM Array for 30ns Access to Any New Page


    Original     		PDF DM512K64DT6/DM512K72DT6 512Kb 64/512Kb 168BD5-TR DM512K72DT 72-bit U10A-14 U11A-8 CQX 86 512kx8 dram simm cqx 87 u12A U11C U832 U12A-14 u318

    Untitled

    Abstract: No abstract text available
    Text: EbE D May 10, 1989 _ • □ES47T3 Q000177 b ■ ADVANCED ELECTRONIC P K G AEPSX256K8 STATIC RAM MODULE > > 262,144 x 8 Organization > > Double sided to maximize hit density > > Low 0.66" stand-off height suited to 0.8" card spacing > > Completely Static operation


    OCR Scan     		PDF ES47T3 Q000177 AEPSX256K8 AEPSX256K8 88/E2/9

    Untitled

    Abstract: No abstract text available
    Text: DM2200EDRAM 4Mb x 1Enhanced Dynamic RAM ^ p M T R O N Preliminary Datasheet Features I On-Chip Cache Hit/Miss Comparator I Transparent DRAM Refresh During Cache Reads I Hidden DRAM Precharge During Cache Reads I Refresh Counter with Dedicated Path to DRAM Array


    OCR Scan     		PDF DM2200EDRAM 15nsec 35nsec 2200J

    tp5n40

    Abstract: Motorola transistor 388 TO-204AA TIC 160 D M30TR TP5N40E
    Text: b3b725H DDTflSSS HIT bflE D MOTOROLA SC XSTRS/R F MOTOROLA inOTb • SEMICONDUCTOR TECHNICAL DATA MTM5N40 *MTP5N40E Designer's Data Sheet •M otorola Preferred Device Pow er Field E ffect Transistor N-Channel Enhancement-Mode Silicon Gate T M O S P O W E R FETs


    OCR Scan     		PDF b3b725H O-204AA) 97A-01 97A-03 -fUO-30( 97A-03 O-204AE) tp5n40 Motorola transistor 388 TO-204AA TIC 160 D M30TR TP5N40E

    Untitled

    Abstract: No abstract text available
    Text: 5 ÖE D 7555015 D 0 Q 0 1 ÖS 51? I RAM DM2200EDRAM 'TT4tZ3-37 4Mbx1 EnhancedDynamic RAM r ^ M lR O IN I Preliminary Datasheet R A MT RO N CORP Features • 2K-bits of 15nsec SRAM Cache Memory ■ On-Chip Cache Hit/Miss Comparator ■ Refresh Counter with Dedicated Path to DRAM Array


    OCR Scan     		PDF DM2200EDRAM T4tZ3-37 15nsec 35nsec

    Untitled

    Abstract: No abstract text available
    Text: POWER TRANSISTORS Sat Test Voltages Conditions V a V bì le Ubo" le V V A A ma PT TYPE NO. hit MAXIMUM RATINGS le 25-C BV cbo BVceo BV ebo V V V A Watts & b A Va V le MIN MAX SPC163-04 200 55 40 15 20 15 5 4 1.1 2.2 5 .5 25 SPC163-06 200 75 60 15 20 15 5 4


    OCR Scan     		PDF SPC163-04 SPC163-06 SPC163-08 SPC163-10 SPC163-12 SPC163-14 SPC164-30 TWX-510-224-6582 0000M27 O-114

    ESI 2160

    Abstract: u332 U11B2 cqx 87 u918
    Text: Enhanced Memory Systems Inc. DM512K64DÎ6/DM512K720T6MultibankEDO EDRAM 512Kb x6 4 /5 m x 72 EnhancedDRAM D m Product Specification Features • 8 Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache ■ Fast 4Mbyte DRAM Array for 30ns Access to Any New Page


    OCR Scan     		PDF DM512K64D 6/DM512K720T6MultibankEDO 512Kb DM512K72DT6-12 72-blt ESI 2160 u332 U11B2 cqx 87 u918

    Untitled

    Abstract: No abstract text available
    Text: Enhanced IVfemoiySuterns be. DM512K64DT6/DM512K72DT6 Multibank EDO EDRAM 512Kb x 64/512Kb x 12 Enhanced DRAM DIMM Product Specification Features • 8 Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multi bank Cache ■ Fast 4Mbyte DRAM Array for 30ns Access to Any New Page


    OCR Scan     		PDF DM512K64DT6/DM512K72DT6 64/512Kb 72-bit

    Untitled

    Abstract: No abstract text available
    Text: DM2200EDRAM 4Mb x 1 Enhanced Dynamic RAM r ^ p M T R O N Product Specification Features • 2Kbit SRAM Cache Memory for 15ns Random Reads Within a Page ■ 8ns Burst Read Capability ■ Fast 4Mbit DRAM Array for 35ns Access to Any New Page ■ Write Posting Register for 15ns Random Writes and Burst Writes


    OCR Scan     		PDF DM2200EDRAM 256-byte DM2200J

    Untitled

    Abstract: No abstract text available
    Text: DM2200EDRAM 4Mb x 1 Enhanced Dynamic RAM r ^ M T R O N Product Specification Features • 2Kbit SRAM Cache Memory for 15ns Random Reads Within a Page ■ Interleave SRAM Cache for 8ns Burst Read ■ Fast 4Mbit DRAM Array for 35ns Access to Any New Page ■ Write Posting Register for 15ns Random Writes and Burst Writes


    OCR Scan     		PDF DM2200EDRAM 256-byte DM2200 DM2200J

    write-verify

    Abstract: DM2200J
    Text: par Enhanced K l MemoiySystemsInc. DM 2200edram 4Ubx1GlancedDynamicRAM Product Specification Features • 2Kbit SRAM Cache Memory for 15ns Random Reads Within a Page ■ Interleave SRAM Cache for 8ns Burst Read ■ Fast 4Mbit DRAM Array for 35ns Access to Any New Page


    OCR Scan     		PDF 256-byte DM2200J write-verify

    Untitled

    Abstract: No abstract text available
    Text: «5 Enhanced Memory Systems Inc. DM2240Multibank EDO EDRAM 4Mb x 1 Enhanced Dynamic RAM ProductSpecification Features • 8Kbit SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache ■ Fast 4Mbit DRAM Array for 30ns Access to Any New Page


    OCR Scan     		PDF DM2240Multibank 256-byte Oper0J2-121

    Untitled

    Abstract: No abstract text available
    Text: DM2200EDRAM 4Mb x 1Enhanced Dynamic RAM F ^ a M T R O N Product Specification Features • ■ ■ ■ 2Kbit SRAM Cache Memory for 15ns Random Reads Within a Page 8ns Burst Read Capability Fast 4Mbit DRAM Array for 35ns Access to Any New Page Write Posting Register for 15ns Random Writes and Burst Writes


    OCR Scan     		PDF DM2200EDRAM 256-byte