Untitled
Abstract: No abstract text available
Text: date 02/23/2012 page 1 of 3 MODEL: SJ-435105 │ DESCRIPTION: 3.5 MM AUDIO JACK FEATURES • spring contact tabs • gold flash • low profile RoHS SPECIFICATIONS parameter conditions/description min typ rated input voltage rated input current contact resistance
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SJ-435105
50/60Hz
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Untitled
Abstract: No abstract text available
Text: date 11/28/2012 page 1 of 3 MODEL: SJ-43504-SMT │ DESCRIPTION: MID MOUNT AUDIO JACK FEATURES • mid mount for low profile applications • shielded • two internal switches, tip and ring SPECIFICATIONS parameter conditions/description min typ rated input voltage
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SJ-43504-SMT
50/60Hz
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Untitled
Abstract: No abstract text available
Text: date 08/23/2012 page 1 of 3 MODEL: PJ-074-SMT │ DESCRIPTION: DC POWER JACK FEATURES • 3 conductor • no internal switches • gold flash RoHS SPECIFICATIONS parameter conditions/description min typ rated input voltage rated input current contact resistance
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PJ-074-SMT
50/60Hz
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JANSR2N5401UB
Abstract: 2N5401UB06 J2N5401UB1
Text: 2N5401HR Hi-Rel PNP bipolar transistor 150 V, 0.5 A Datasheet - production data Features 3 1 BVCEO 150 V IC max 0.5 A HFE at 10 V - 150 mA > 60 1 2 2 3 TO-18 LCC-3 3 • Hermetic packages • ESCC and JANS qualified 4 1 • Up to 100 krad(Si) low dose rate
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2N5401HR
2N5401HR
MIL-PRF19500
DocID16934
JANSR2N5401UB
2N5401UB06
J2N5401UB1
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Untitled
Abstract: No abstract text available
Text: date 06/28/2011 page 1 of 3 SERIES: SJ-3503-SMT │ DESCRIPTION: MID MOUNT POWER JACK FEATURES •mid mount for low profile applications •shielded •two internal switches, tip and ring RoHS SPECIFICATIONS parameter conditions/description min rated input voltage
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SJ-3503-SMT
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Untitled
Abstract: No abstract text available
Text: 2N5401HR Hi-Rel PNP bipolar transistor 150 V, 0.5 A Datasheet - production data Features 3 1 BVCEO 150 V IC max 0.5 A HFE at 10 V - 150 mA > 60 1 2 2 3 TO-18 LCC-3 3 • Hermetic packages • ESCC and JANS qualified 4 1 • Up to 100 krad(Si) low dose rate
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2N5401HR
2N5401HR
MIL-PRF19500
DocID16934
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marking code RAD SMD Transistor npn
Abstract: JS55
Text: 2N5551HR Hi-Rel NPN bipolar transistor 160 V, 0.5 A Datasheet - production data Features 3 1 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 1 2 2 3 TO-18 LCC-3 3 • Hermetic packages • ESCC and JANS qualified 4 1 • Up to 100 krad(Si) low dose rate
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2N5551HR
2N5551HR
MIL-PRF19500
DocID16935
marking code RAD SMD Transistor npn
JS55
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RAD SMD MARKING CODE
Abstract: 2N5551RUB
Text: 2N5551HR Hi-Rel NPN bipolar transistor 160 V, 0.5 A Datasheet - production data Features 3 1 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 1 2 2 3 TO-18 LCC-3 • Hermetic packages • ESCC and JANS qualified • Up to 100 krad(Si) low dose rate UB Description
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2N5551HR
2N5551HR
MIL-PRF19500
DocID16935
RAD SMD MARKING CODE
2N5551RUB
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Untitled
Abstract: No abstract text available
Text: date 01/07/2013 page 1 of 3 MODEL: PJ-077 │ DESCRIPTION: DC POWER JACK FEATURES • spring terminals • low profile • no internal switch RoHS SPECIFICATIONS parameter conditions/description min rated input voltage typ rated input current contact resistance*
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PJ-077
50/60Hz
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Untitled
Abstract: No abstract text available
Text: date 11/28/2012 page 1 of 3 MODEL: PJ-072C-SMT │ DESCRIPTION: DC POWER JACK FEATURES • shielded • low profile • surface mount SPECIFICATIONS parameter conditions/description min typ rated input voltage 16 rated input current between terminal and mating plug
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PJ-072C-SMT
50/60Hz
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MM8430-2600RA1
Abstract: MXGS83RK3000 MM126036 MM8430-2600
Text: [muRata] Search Search Engine >Catalog: MM8430-2600RA1 Microwave Components > Coaxial Connectors with Switch Specification Details Global Part Number MM8430-2600RA1 Previous Part Number MM8430-2600TB1 Rated Voltage 250Vrms Contact Resistance max. 0.05ohm
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MM8430-2600RA1
MM8430-2600TB1
250Vrms
05ohm
300Vrms
500cycles
50ohm
90degree
180mm
MXGS83RK3000
MM126036
MM8430-2600
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STMicroelectronics smd marking code
Abstract: st smd diode marking code
Text: STPS20100HR Aerospace 1 x 20 and 2 x 20 A - 100 V Schottky rectifier Datasheet - production data • High reverse avalanche surge capability • Hermetic packages • Target radiation qualification: – 150 krad Si low dose rate – 1 Mrad high dose rate
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STPS20100HR
O-254
ESCC5000
STPS20100HR
DocID16953
STMicroelectronics smd marking code
st smd diode marking code
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CK082
Abstract: DDR2 samsung pc2-6400 400MB DM2102 samsung pc2-6400 micron DDR2 pc2-6400
Text: White Electronic Designs W3HG232M64SEU-D4 ADVANCED* 512MB – 2x32Mx64 DDR2 SDRAM UNBUFFERED, w/PLL FEATURES DESCRIPTION 200-pin, dual in-line memory module SO-DIMM The W3HG232M64SEU is a 2x32Mx64 Double Data Rate 2 SDRAM memory module based on 512Mb DDR2 SDRAM components. The module consists of
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W3HG232M64SEU-D4
512MB
2x32Mx64
200-pin,
PC2-6400*
PC2-5300*
PC2-4200
PC2-3200
18-compatible)
CK082
DDR2 samsung pc2-6400
400MB
DM2102
samsung pc2-6400
micron DDR2 pc2-6400
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n38 transistor
Abstract: n325 N347
Text: SPECIFICATIONS PARAMETERS RATED INPUT POWER MAX INPUT POWER IMPEDANCE OUTPUT SPL @ 0.1W/0.1M AT 0.8, 1.0, 1.2, 1.5 kHz DISTORTION (MAX.) RESONANT FREQUENCY FREQUENCY RANGE HOUSING MATERIAL CONE MATERIAL MAGNET MATERIAL OPERATING TEMPERATURE WEIGHT VALUES
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2002/95/EC
AS03608MR-SC-R
AS03608MR-SC-R
n38 transistor
n325
N347
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tantalum capacitor markings
Abstract: T498 tantalum capacitor rated voltage marking smt CAPACITOR marking code ec-2 140c
Text: Product Update – T498 High Temperature +150°C Tantalum SMT Capacitors KEMET Electronics Corp. P. O. Box 5928 Greenville, SC 29606 The tantalum SMT capacitor in its solid-state structure is typically rated as capable of 125°C applications. The T498 tantalum surface mount capacitor has a maximum
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DQS0-DQS17
Abstract: DDR2 DIMM 240 pin names samsung memory ddr2 pc2-6400
Text: White Electronic Designs W3HG128M72AER-D6 ADVANCED* 1GB – 128Mx72 DDR2 SDRAM REGISTERED, ECC, w/PLL FEATURES DESCRIPTION 240-pin, dual in-line memory module DIMM The W3HG128M72AER is a 128Mx72 Double Data Rate 2 SDRAM memory module based on 512Mb DDR2
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W3HG128M72AER-D6
128Mx72
240-pin,
PC2-6400*
PC2-5300*
PC2-4300
PC2-3200
18-compatible)
DQS0-DQS17
DDR2 DIMM 240 pin names
samsung memory ddr2 pc2-6400
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tantalum capacitor rated voltage marking
Abstract: tantalum capacitor markings STD-020C T498 T499
Text: Product Update – T499 High Temperature +175°C Tantalum SMT Capacitors KEMET Electronics Corp. P. O. Box 5928 Greenville, SC 29606 The tantalum SMT capacitor in its solid-state structure is typically rated as capable of 125°C applications. The T498 tantalum surface mount capacitor introduced earlier
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2N5551UB
Abstract: SOC5551 SOC5551SW 2n5551 smd 2N5551HR IC 5201/019/05 SOC5551SW 520101904 SOC5551HRB 2N5551UB1
Text: 2N5551HR Hi-Rel NPN bipolar transistor 160 V - 0.5 A Features 3 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 Operating temperature range -65°C to +200°C • Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL ■
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2N5551HR
2N5551HR
2N5551UB
SOC5551
SOC5551SW
2n5551 smd
IC 5201/019/05 SOC5551SW
520101904
SOC5551HRB
2N5551UB1
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2n5551 smd
Abstract: 2N5551HR
Text: 2N5551HR Hi-Rel NPN bipolar transistor 160 V - 0.5 A Features 3 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 Operating temperature range -65°C to +200°C • Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL ■
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2N5551HR
2N5551HR
2n5551 smd
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Untitled
Abstract: No abstract text available
Text: 2N5551HR Hi-Rel NPN bipolar transistor 160 V - 0.5 A Features 3 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 Operating temperature range -65°C to +200°C • Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL ■
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2N5551HR
2N5551HR
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2N5401UB1
Abstract: No abstract text available
Text: 2N5401HR Hi-Rel PNP bipolar transistor 150 V - 0.5 A Features 3 BVCEO 150 V IC max 0.5 A HFE at 10 V - 150 mA > 60 Operating temperature range -65°C to +200°C 1 1 2 2 3 TO-18 LCC-3 3 • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics ■
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2N5401HR
2N5401HR
2N5401UB1
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2n5401 smd
Abstract: 2n5401ub SOC5401 SOC5401SW 2N5401UB1 TRANSISTOR SMD CODES SOC5401HRB escc 2n5401 transistor TRANSISTOR SMD MARKING CODES
Text: 2N5401HR Hi-Rel PNP bipolar transistor 150 V - 0.5 A Features 3 BVCEO 150 V IC max 0.5 A HFE at 10 V - 150 mA > 60 Operating temperature range -65°C to +200°C 1 1 2 2 3 TO-18 LCC-3 3 • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics ■
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2N5401HR
2N5401HR
2n5401 smd
2n5401ub
SOC5401
SOC5401SW
2N5401UB1
TRANSISTOR SMD CODES
SOC5401HRB
escc
2n5401 transistor
TRANSISTOR SMD MARKING CODES
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SJ1-4251X-SMT
Abstract: No abstract text available
Text: date 11/01/2012 page 1 of 3 SERIES: SJ1-4251X-SMT │ DESCRIPTION: 2.5 MM AUDIO JACKS FEATURES • right angle • plastic bushing • gold flash RoHS PART NUMBER KEY SJ1-4251 X-SMT-X Base Number Switch Options 4 = no switch 5TS = tip switch 5RS = ring switch
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SJ1-4251X-SMT
SJ1-4251
SJ1-4251X-SMT
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SOC3700SW
Abstract: ESCC 5201-004 15354 time switch add 5201 ST MAKE SMD TRANSISTOR SOC3700HRB smd transistor marking 5201 marking code RAD SMD Transistor npn 2N3700HR SOC3700
Text: 2N3700HR Hi-Rel NPN bipolar transistor 80 V - 1 A Features 3 BVCEO 80 V IC max 1A HFE at 10 V - 150 mA > 100 Operating temperature range -65°C to +200°C 1 1 2 2 3 TO-18 LCC-3 3 4 • Hi-Rel NPN bipolar transistor 1 2 ■ Linear gain characteristics ■
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2N3700HR
2N3700HR
SOC3700SW
ESCC 5201-004
15354 time switch
add 5201
ST MAKE SMD TRANSISTOR
SOC3700HRB
smd transistor marking 5201
marking code RAD SMD Transistor npn
SOC3700
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