2SJ386
Abstract: Hitachi 2SJ Hitachi DSA00389
Text: 2SJ386 Silicon P-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter
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2SJ386
2SJ386
Hitachi 2SJ
Hitachi DSA00389
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2SJ386
Abstract: No abstract text available
Text: 2SJ386 Silicon P Channel MOS FET Application TO-92Mod. High speed power switching Features • • • • Low on–resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC – DC
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2SJ386
O-92Mod.
2SJ386
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Hitachi 2SJ
Abstract: Hitachi DSA002751
Text: 2SJ386 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter
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2SJ386
D-85622
Hitachi 2SJ
Hitachi DSA002751
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2SJ148
Abstract: 2SK982 transistor a 92
Text: 2SJ148 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ148 High Speed Switching Applications Analog Switch Applications Interface Applications • Unit: mm Excellent switching time: ton = 14 ns typ. • High forward transfer admittance: |Yfs| = 100 mS (min)
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2SJ148
2SK982
2SJ148
2SK982
transistor a 92
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Untitled
Abstract: No abstract text available
Text: 2SJ148 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ148 High Speed Switching Applications Analog Switch Applications Interface Applications Unit: mm • Excellent switching time: ton = 14 ns typ. • High forward transfer admittance: |Yfs| = 100 mS (min)
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2SJ148
2SK982
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Toshiba 2SJ
Abstract: No abstract text available
Text: 2SJ148 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ148 High Speed Switching Applications Analog Switch Applications Interface Applications • Unit: mm Excellent switching time: ton = 14 ns typ. • High forward transfer admittance: |Yfs| = 100 mS (min)
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2SJ148
2SK982
SC-43
Toshiba 2SJ
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2SJ148
Abstract: 2SK982
Text: 2SJ148 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ148 High Speed Switching Applications Analog Switch Applications Interface Applications • Unit: mm Excellent switching time: ton = 14 ns typ. • High forward transfer admittance: |Yfs| = 100 mS (min)
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2SJ148
2SK982
2SJ148
2SK982
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2SJ148
Abstract: 2SK982 Toshiba 2SJ
Text: 2SJ148 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ148 High Speed Switching Applications Analog Switch Applications Interface Applications Unit: mm • Excellent switching time: ton = 14 ns typ. · High forward transfer admittance: |Yfs| = 100 mS (min)
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2SJ148
2SK982
-55transportation
2SJ148
2SK982
Toshiba 2SJ
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2SJ386
Abstract: Hitachi 2SJ DSA003638
Text: 2SJ386 Silicon P-Channel MOS FET ADE-208-1195 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter
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2SJ386
ADE-208-1195
2SJ386
Hitachi 2SJ
DSA003638
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2SJ386
Abstract: 2SJ386TZ-E PRSS0003DC-A
Text: 2SJ386 Silicon P Channel MOS FET REJ03G0861-0200 Previous: ADE-208-1195 Rev.2.00 Sep 07, 2005 Description High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source
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2SJ386
REJ03G0861-0200
ADE-208-1195)
PRSS0003DC-A
20ijing
2SJ386
2SJ386TZ-E
PRSS0003DC-A
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Untitled
Abstract: No abstract text available
Text: 2SJ386 Silicon P Channel MOS FET REJ03G0861-0200 Previous: ADE-208-1195 Rev.2.00 Sep 07, 2005 Description High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source
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2SJ386
REJ03G0861-0200
ADE-208-1195)
PRSS0003DC-A
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BSP204
Abstract: No abstract text available
Text: Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. DESCRIPTION P-channel enhancement mode
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BSP204)
BSP204;
BSP204A
BSP204-
DA710
A/-10
MDA711
BSP204
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. DESCRIPTION SYMBOL PARAMETER V ds
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BSP254;
BSP254A
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BS208
Abstract: MB8075
Text: Philips Components Data sheet status Product specification date of issue February 1991 BS208 P-channel enhancement mode vertical D-MOS transistor PIN CONFIGURATION FEATURES • Direct interface to C-MOS • High-speed switching • No secondary breakdown.
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BS208
aTO-92
MB8075
iz7os34
003L011
BS208
MB8075
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor FEATURES PINNING - TO-92 SOT54 variant • Direct interface to C-MOS, TTL, etc. PIN SYMBOL DESCRIPTION • High-speed switching 1 g • No secondary breakdown.
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1997Jun
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MBB691
Abstract: BS108 UBB073
Text: • PhilipsSemiconductor« ^ hb53=l31 0DS3?at 27t m APX PHILIPS/DISCRETE b ? E D P " *» "* .p ~ m c Mlon N-channel enhancement mode vertical D-MOS transistor FEATURES c BS108 QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. • High-speed switching
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E372h
BS108
MBB691
BS108
UBB073
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2SJ148
Abstract: 2SK982
Text: TO SHIBA 2SJ148 2 S J 1 48 TOSHIBA FIELD EFFECT TRANSISTOR HIGH SPEED SWITCHING APPLICATIONS SILICON P CHANNEL MOS TYPE Unit in mm ANALOG SWITCH APPLICATIONS . 5.1 M AX. INTERFACE APPLICATIONS 0.45 Excellent Switching Time ton - 14ns Typ. High Forward Transfer Admittance
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2SJ148
2SK982
SC-43
2SJ148
2SK982
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Untitled
Abstract: No abstract text available
Text: TO SH IBA 2SJ148 TOSHIBA FIELD EFFECT TRANSISTOR HIGH SPEED SWITCHING APPLICATIONS SILICON P CHANNEL MOS TYPE 2 S J 1 48 Unit in mm ANALOG SWITCH APPLICATIONS . 5.1 MAX. INTERFACE APPLICATIONS Excellent Switching Time : ton = 14ns Typ. High Forward Transfer Admittance : |Yfs| = lOOmS (Min.)
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2SJ148
2SK982
--10V,
-100m
--30V
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2SJ148
Abstract: 2SK982
Text: TO SH IBA 2SJ148 TOSHIBA FIELD EFFECT TRANSISTOR HIGH SPEED SWITCHING APPLICATIONS SILICON P CHANNEL MOS TYPE 2 S J 1 48 Unit in mm ANALOG SWITCH APPLICATIONS . 5.1 MAX. INTERFACE APPLICATIONS Excellent Switching Time : ton = 14ns Typ. High Forward Transfer Admittance : |Yfs| = lOOmS (Min.)
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2SJ148
2SK982
--10V,
-100m
--30V
2SJ148
2SK982
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TRANSISTOR D 570
Abstract: BSS110 INFINEON BSS110 B34 transistor
Text: Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSS110 FEATURES • Low threshold voltage • Direct interface to C-MOS, TTL, etc. • High speed switching • No secondary breakdown. APPLICATIONS • Intended for use as a Line current interruptor in
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BSS110
nat25Â
7110fl2b
0CH3015
TRANSISTOR D 570
BSS110
INFINEON BSS110
B34 transistor
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SJ148 TOSHIBA FIELD EFFECT TRANSISTOR HIGH SPEED SWITCHING APPLICATIONS SILICON P CHANNEL MOS TYPE 2 S J 1 48 U nit in mm ANALOG SWITCH APPLICATIONS . 5.1 M AX. INTERFACE APPLICATIONS E xcellent Switching Time ton = 14ns Typ. High Forward Transfer Admittance
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2SJ148
2SK982
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SJ148 TOSHIBA FIELD EFFECT TRANSISTOR HIGH SPEED SWITCHING APPLICATIONS SILICON P CHANNEL MOS TYPE 2 S J 148 Unit in mm ANALOG SWITCH APPLICATIONS 5.1 M AX. INTERFACE APPLICATIONS Excellent Switching Time ft A'i : t0n = i4ns Typ. 0.55 MAX. High Forward Transfer Admittance ; |Yfs | = lQOmS (Min,)
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2SJ148
2SK982
SC-43
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Untitled
Abstract: No abstract text available
Text: Philips Components D a ta s h eet s tatu s Product specification d a te o f issue November 1990 FEATURES • BSP204/BSP204A P-channel enhancement mode vertical D-MOS transistor QUICK REFERENCE DATA Direct interface to C-MOS, TTL, etc. • High-speed switching
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BSP204/BSP204A
BSP204)
BSP204A)
Q03b073
D03b077
A/-10
CB738
003bQ
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2SJ507
Abstract: Toshiba 2SJ Transistor
Text: TO SHIBA 2SJ507 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt- M O S V 2SJ 507 INDUSTRIAL APPLICATIONS U nit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 5.1 M AX.
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2SJ507
75MAX.
--10V,
2SJ507
Toshiba 2SJ Transistor
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