High-Power NPN Silicon Power Transistor 30A
Abstract: MJ4502 MJ802 High-Power NPN Silicon Power Transistor pec 928 High-Power NPN Silicon Power Transistor 30A, to3
Text: ÆàMOS PEC HIGH-POWER NPN SILICON TRANSISTOR NPN .for use as an output device in complementary audio amplifiers to 100-Watts music power per channel. MJ802 FEATURES * Continuous Collector Current- lc= 30A * High DC Current Gain- hFE=25-100@lc= 7.5A * Excellent Safe Operating Area
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100-Watts
750mA
MJ4502
High-Power NPN Silicon Power Transistor 30A
MJ4502
MJ802
High-Power NPN Silicon Power Transistor
pec 928
High-Power NPN Silicon Power Transistor 30A, to3
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NTE386
Abstract: npn 10a 800v
Text: NTE386 Silicon NPN Transistor Audio Power Amp, Switch Description: The NTE386 is a silicon NPN power transistor in a TO3 type package designed for high voltage, high– speed power switching in inductive circuit where fall time is critical. This device is particularly suited
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NTE386
NTE386
300ms,
npn 10a 800v
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Untitled
Abstract: No abstract text available
Text: SILICON HIGH POWER NPN TRANSISTOR 2N5672 • High Current Rating • Hermetic TO3 Metal Package. • Designed For High Speed Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO
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2N5672
34mW/Â
800mW/Â
380us,
O-204AA)
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Untitled
Abstract: No abstract text available
Text: SILICON HIGH POWER NPN TRANSISTOR 2N5672 • High Current Rating • Hermetic TO3 Metal Package. • Designed For High Speed Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO
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2N5672
34mW/Â
800mW/Â
380us,
O-204AA)
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Untitled
Abstract: No abstract text available
Text: SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUX10 • High Current Capability. • Hermetic TO3 Metal package. • Designed For Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO
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BUX10
O-204AA)
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Untitled
Abstract: No abstract text available
Text: SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUX10 • High Current Capability. • Hermetic TO3 Metal package. • Designed For Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO
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BUX10
O-204AA)
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bux23
Abstract: No abstract text available
Text: SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUX23 • High Current, Fast Switching. • Hermetic Metal TO3 Package. • Ideally suited for Motor Control and Power Switching Circuits • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated
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BUX23
O-204AE)
bux23
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BUX39
Abstract: transistor 110v
Text: SILICON EPITAXIAL NPN TRANSISTOR BUX39 • High Current Capability. • Hermetic TO3 Metal package. • Ideally suited for Motor Control, Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated
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BUX39
O-204AA)
BUX39
transistor 110v
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Untitled
Abstract: No abstract text available
Text: SILICON EPITAXIAL NPN TRANSISTOR BUX39 • High Current Capability. • Hermetic TO3 Metal package. • Ideally suited for Motor Control, Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated
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BUX39
O-204AA)
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nte181
Abstract: NTE180MCP NEC 08F NTE181MP NTE180 NTE181 power transistor 200w audio power amplifier
Text: NTE180 PNP & NTE181 (NPN) Silicon Power Transistor High Power Audio Amplifier Description: The NTE180 (PNP) and NTE181 (NPN) are silicon complementary transistors in a TO3 type case designed for use as output devices in complementary audio amplifiers to 100 watts music power per
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NTE180
NTE181
750mA
NTE181MP
NTE181
NTE180MCP
NEC 08F
NTE180
NTE181 power transistor
200w audio power amplifier
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NTE385
Abstract: No abstract text available
Text: NTE385 Silicon NPN Transistor Audio Power Amp, Switch Description: The NTE385 is a silicon NPN transistor in a TO3 type package designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated
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NTE385
NTE385
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nte98
Abstract: No abstract text available
Text: NTE98 Silicon NPN Transistor HV Darlington Power Amp, Switch Description: The NTE98 is a silicon NPN Darlington transistor in a TO3 type package designed for high voltage, high–speed, power switching in inductive circuits where fall–time is critical. They are particularly
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NTE98
NTE98
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Darlington 30A
Abstract: No abstract text available
Text: 6 1 1 5 9 5 0 MI CROSEMI CORP/ POWER Û2E ÖÖ 480 D j_0E DEjbllSTSD □00D4Û0 fl pjQ -|0020 H T EC H N O L O G Y p j c 10021 Power Technology Components HIGH VOLTAGE DARLINGTON NPN TRANSISTORS 60 AMPERES 250 VOLTS 0.161 4jg 0.15) (3 84) u w - FEATURES
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NTE53
Abstract: TRANSISTOR 450V 5A NPN 100W
Text: NTE53 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE53 is a silicon NPN transistor in a TO3 type package designed for high voltage, high - speed power switching in inductive circuits where fall time is critical. This device is particularly suited for
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NTE53
NTE53
TRANSISTOR 450V 5A NPN 100W
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Untitled
Abstract: No abstract text available
Text: J.S.11.S.Ut/ ^zmi-donauctoi L/^ioaucti, One. CX TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BUY52A Silicon NPN Power Transistor DESCRIPTION • High Current Capability • Fast Switching Speed
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BUY52A
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pin diagram of ic 4066
Abstract: ic tc 4066 diagram MJ11015 darlington complementary 120v npn darlington transistor 200 watts MJ11016 MJ11015-11016 11016 Darlington npn 2 amp 60 amp npn darlington power transistors
Text: MJ11015, 11016 Darlington Power Transistors Complementary Silicon Power Darlington Transistors are designed for use as output devices in complementary general purpose amplifier applications. Features: • High Gain Darlington performance. • High DC Current Gain hFE = 1000 Minimum at IC = 20A.
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MJ11015,
MJ11015
MJ11016
pin diagram of ic 4066
ic tc 4066 diagram
MJ11015
darlington complementary 120v
npn darlington transistor 200 watts
MJ11016
MJ11015-11016
11016
Darlington npn 2 amp
60 amp npn darlington power transistors
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Transistor 200V 20A
Abstract: 200V transistor npn 20a SDT6338 NPN Transistor VCEO 80V 100V POWER TRANSISTOR PNP 20a 80v TO-3 200V transistor pnp 20a
Text: ^/outran [fk ®!!! ? ©ättm ^n Devices. Inc MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUM BER NPN EPITAXIAL PLANAR POWER TRANSISTOR* CONTACT METALLIZATION A Base and emitter: > 50,000 Aluminum Collector: Gold Polished silicon or "Chrome Nickel Silver” also available)
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305mm)
Transistor 200V 20A
200V transistor npn 20a
SDT6338
NPN Transistor VCEO 80V 100V
POWER TRANSISTOR PNP 20a 80v TO-3
200V transistor pnp 20a
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Untitled
Abstract: No abstract text available
Text: PGäOEXyKgTT @ A ¥ Ä [ L Devices. Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUM BER PIMP EPITAXIAL PLANAR POWER TRANSISTOR* CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available
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203mm)
20MHz
20MHz
500pF
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SOLITRON DEVICES
Abstract: No abstract text available
Text: at SOLITRON DEVICES INC 7-. DE I û3t.flfaDS DDDSSb'i S ELEMENT NUMBER 144 MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CONTACT METALLIZATION Base and emitter: > 5 0 .0 0 0 À Aluminum FORMERLY 44 Collector: Polished Silicon
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45mmx6
25mmx3
203mm)
40MHz
40MHz
300pF
SOLITRON DEVICES
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induction cooker schematic diagram
Abstract: schematic diagram induction heating schematic diagram induction cooker diagram induction cooker schematic induction heating induction cooker circuit diagram induction cooker schematic induction heating schematic induction cooker Darlington NPN 250W
Text: NTE2558 Silicon NPN Transistor Darlington, High Voltage, High Speed Switch w/ Damper Diode TO3PBL Type Package Features: D High Reliability D High Collector−Base Breakdown Voltage D On−Chip Damper Diode Applications: D High−Voltage, High−Power Switching
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NTE2558
100mA
induction cooker schematic diagram
schematic diagram induction heating
schematic diagram induction cooker
diagram induction cooker
schematic induction heating
induction cooker circuit diagram
induction cooker schematic
induction heating schematic
induction cooker
Darlington NPN 250W
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c106 TRANSISTOR
Abstract: 800PF SDT6436 C10601 160V 30A TRANSISTOR SDT6438 c106
Text: -Jfclitron 1?1M [d 1ü) T ©ÄTTÄIL® Devices. Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER PNP EPITAXIAL PLANAR POWER TRANSISTOR* * CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver'' also available)
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305mm)
c106 TRANSISTOR
800PF
SDT6436
C10601
160V 30A TRANSISTOR
SDT6438
c106
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200V transistor npn 20a
Abstract: Transistor 200V 20A 200V transistor pnp 20a NPN Transistor VCEO 80V 100V hfe 100 Transistor PnP 200V 20A
Text: S OLI TRON DEV ICE S INC ^5 DE | ä 3 bflbOE ODOafib? □ r ‘- 7 j _ / s " tPE iß y 'F © ä to l® ® _ ^ w E iÉ ro n Devices, Inc. M EDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER NPN EPITAXIAL PLANAR POWER TRANSISTOR* x£\
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305mm)
20MHz
700pF
700pF
200V transistor npn 20a
Transistor 200V 20A
200V transistor pnp 20a
NPN Transistor VCEO 80V 100V hfe 100
Transistor PnP 200V 20A
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transistor 2n5330
Abstract: transistor c63 NPN Transistor VCEO 80V 100V
Text: Contran Devices. Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR FORMERLY 44 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver” also available)
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203mm)
40MHz
40MHz
300pF
transistor 2n5330
transistor c63
NPN Transistor VCEO 80V 100V
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Untitled
Abstract: No abstract text available
Text: NTE2677 Silicon NPN Transistor High Voltage, High Speed Switch TO3P H IS Type Package Features: D High Breakdown Voltage: VCBO = 1500V Min D High Switching Speed D Low Saturation Voltage Applications: D Color TV Horizontal Deflection Output Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
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NTE2677
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