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    HIGH VOLTAGE POWER SOURCE Search Results

    HIGH VOLTAGE POWER SOURCE Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4162F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4206F Toshiba Electronic Devices & Storage Corporation Intelligent power device 500V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation

    HIGH VOLTAGE POWER SOURCE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Automotive ecm

    Abstract: interleave flyback controller buck current mode controller lm5035 active clamp controller LM5026 LM5008 LM5000 LM5020 lm5025a LM5107
    Text: LM5000 Family of High-Voltage Power Products Flexible High-Voltage Power Conversion Solutions LM5000 High-Voltage Power IC Family AC/DC Conversion and Hot Swap Isolated Primary Power Conversion Non-Isolated Point of Load Regulation Offline Power Converters


    Original     		PDF LM5000 LM5104 LLP-10 LM5105 LM5106 MSOP-10, Automotive ecm interleave flyback controller buck current mode controller lm5035 active clamp controller LM5026 LM5008 LM5020 lm5025a LM5107

    IX2127

    Abstract: DS-IX2127-R01 EIA-481-2 VB-12 FLUORESCENT ballast 12v
    Text: IX2127 High-Voltage Power MOSFET & IGBT Driver Driver Characteristics Parameter VOFFSET IO +/- Source/Sink Description Rating Units 600 V 250/500 mA VCSth 250 mV tON / tOFF (Typical) 100 ns The IX2127 is a high-voltage, high-speed power MOSFET and IGBT driver. High-voltage level-shift


    Original     		PDF IX2127 IX2127 DS-IX2127-R01 DS-IX2127-R01 EIA-481-2 VB-12 FLUORESCENT ballast 12v

    "high voltage" amplifier

    Abstract: high voltage diodes 171J
    Text: High Voltage Differential FET Amplifier Model 171 FEATURES High Output Voltage: ±140V High CMR: 100dB min Operates With a Wide Range of Power Supplies High CMV: ± |VS| - 10V APPLICATIONS High Voltage Compliance Current Source High Voltage Follower With Gain


    Original     		PDF 100dB l00dB "high voltage" amplifier high voltage diodes 171J

    Untitled

    Abstract: No abstract text available
    Text: IX2127 High-Voltage Power MOSFET & IGBT Driver Driver Characteristics Parameter VOFFSET IO +/- Source/Sink Description Rating Units 600 V 250/500 mA VCSth 250 mV tON / tOFF (Typical) 100 ns The IX2127 is a high-voltage, high-speed power MOSFET and IGBT driver. High-voltage level-shift


    Original     		PDF IX2127 IX2127 DS-IX2127-R02

    IX2127

    Abstract: J-STD-033 VB-12
    Text: IX2127 High-Voltage Power MOSFET & IGBT Driver Driver Characteristics Parameter VOFFSET IO +/- Source/Sink Description Rating Units 600 V 250/500 mA VCSth 250 mV tON / tOFF (Typical) 100 ns The IX2127 is a high-voltage, high-speed power MOSFET and IGBT driver. High-voltage level-shift


    Original     		PDF IX2127 IX2127 DS-IX2127-R02 J-STD-033 VB-12

    Untitled

    Abstract: No abstract text available
    Text: IX2127 High-Voltage Power MOSFET & IGBT Driver Driver Characteristics Parameter VOFFSET IO +/- Source/Sink Description Rating Units 600 V 250/500 mA VCSth 250 mV tON / tOFF (Typical) 100 ns The IX2127 is a high-voltage, high-speed power MOSFET and IGBT driver. High-voltage level-shift


    Original     		PDF IX2127 IX2127 DS-IX2127-R02

    MJE4353 equivalent

    Abstract: equivalent transistor K 3634 to220 amps 1200 v BU108 SDT9207 "cross reference" BU100 D45H11 cross reference cross reference bd830 2SD1815 "cross reference" 2sd1815 cross reference
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJE4342 High-Voltage Ċ High Power Transistors MJE4343 PNP . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector–Emitter Sustaining Voltage —


    Original     		PDF MJE4342 MJE4352 MJE4343 MJE4353 TIP73B TIP74 MJE4353 equivalent equivalent transistor K 3634 to220 amps 1200 v BU108 SDT9207 "cross reference" BU100 D45H11 cross reference cross reference bd830 2SD1815 "cross reference" 2sd1815 cross reference

    2953A

    Abstract: No abstract text available
    Text: HIGH VOLTAGE POWER SYSTEMS 7 HCP SERIES Floating Output High Voltage Power System The HCP Series of high-voltage rack mount and bench-top power systems is a fully-featured chassis that enables users to reach higher levels of power, up to 15kW. The broad range of voltage


    Original     		PDF -RS232 -RS422 -I10I -10PPM 5HCP115-FL2 2953A

    2N5631 equivalent

    Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —


    Original     		PDF 2N5630, 2N6030 2N5631, 2N6031 2N5630 2N5631 2N5631 equivalent 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator

    power IGBT MOSFET transistor GTO SCR di

    Abstract: MOSFET IGBT THEORY AND APPLICATIONS gto thyristor driver ic Hockey Puck scr 1000a gto Gate Drive circuit gct thyristor 6 thyristor driver circuit GTO thyristor driver MITSUBISHI GATE TURN-OFF THYRISTOR scr powerex snubber capacitor
    Text: New High Power Semiconductors: High Voltage IGBTs and GCTs Eric R. Motto*, M. Yamamoto* * Powerex Inc., Youngwood, Pennsylvania, USA * Mitsubishi Electric, Power Device Division, Fukuoka, Japan Abstract: Ultra high power, high voltage, power electronics is on the verge of a new era. Two new power


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SGNC320MK High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 55.0dBm typ. @ Psat High Efficiency: 70%(typ.) @ Psat Power Gain : 16.5dB(typ.) @ f=0.9GHz Proven Reliability Only For peak stage of Doherty amplifier DESCRIPTION


    Original     		PDF SGNC320MK 25deg 42dBm

    MG650

    Abstract: MG655 MG750-15 MP900 MV217 MV228 MV234 MV261 mv2342 mg750 caddock
    Text: Page 2 of 2 Type MG Precision High Voltage Resistors Type MV Low Resistance Power Film Resistors MV Low Resistance Power Film Resistors Type MG Precision High Voltage Resistors Type Low Resistance Power Film Resistors Type MG Precision High Voltage Resistors


    Original     		PDF 50Range 750Tel: 44caddock medical20electronics. countryderating870 MG680 MG710 IL110 MG650 MG655 MG750-15 MP900 MV217 MV228 MV234 MV261 mv2342 mg750 caddock

    Untitled

    Abstract: No abstract text available
    Text: HIGH VOLTAGE POWER SYSTEMS 21 MCP SERIES Floating Output High Voltage Power System The MCP Series of high-voltage rack mount and bench-top power systems is a fully-featured chassis that enables users to reach higher levels of power, up to 15kW. The broad range


    Original     		PDF -RS232 -RS422 -I10I -10PPM 125MCP115-FL2

    Untitled

    Abstract: No abstract text available
    Text: SGN21C105MK High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 50.3dBm typ. @ Psat High Efficiency: 60%(typ.) @ Psat Power Gain :17dB(typ.) @ f=2.1GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF SGN21C105MK 25deg JESD22-A114) JEIA/ESD22-A115)

    IX2127

    Abstract: No abstract text available
    Text: IX2127 High-Voltage Power MOSFET & IGBT Driver INTEGRATED CIRCUITS DIVISION Driver Characteristics Parameter VOFFSET IO +/- Source/Sink Description Rating Units 600 V 250/500 mA VCSth 250 mV tON / tOFF (Typical) 100 ns The IX2127 is a high-voltage, high-speed power


    Original     		PDF IX2127 IX2127 DS-IX2127-R03

    BU108

    Abstract: 2SA1046 BDX54 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5745 See 2N4398 2N5758 High-Voltage High-Power Silicon Transistors 6 AMPERE POWER TRANSISTOR NPN SILICON 100 – 140 VOLTS 150 WATTS . . . designed for use in high power audio amplifier applications and high voltage


    Original     		PDF 2N5745 2N4398) 2N5758 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B BU108 2SA1046 BDX54 BU326 BU100

    EKZE101

    Abstract: No abstract text available
    Text: EGN21C210I2D GaN-HEMT 210W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 53.0dBm typ. @ Psat -High Efficiency: 68%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF 14GHz EGN21C210I2D /-10MHz 48dBm /-10MHz EKZE101

    B4846

    Abstract: S21 Package GRM188B11H102KA01D CS3376C
    Text: EGN21C105I2D GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 50.3dBm typ. @ Psat -High Efficiency: 70%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF 14GHz EGN21C105I2D /-10MHz 45dBm /-10MHz B4846 S21 Package GRM188B11H102KA01D CS3376C

    EGN28B400M1B-R

    Abstract: JESD22-A114 Sumitomo 1076
    Text: EGN28B400M1B-R High Voltage - High Power GaN-HEMT for Radar FEATURES •High Voltage Operation : VDS=50V •High Power : 400W min. @ Pin=25W (44dBm) •High Efficiency: 50%(typ.) @ Pin=25W (44dBm) DESCRIPTION Sumitomo GaN-HEMT EGN28B400M1B-R offers high power, high


    Original     		PDF EGN28B400M1B-R 44dBm) EGN28B400M1B-R JESD22-A114 Sumitomo 1076

    MARK PSRI

    Abstract: "Analog Multiplier" PSRI MAX4210 MAX4210AETT-T MAX4210AEUA MAX4211 COUT27
    Text: 19-3285; Rev 1; 5/05 KITS ATION EVALU ABLE AVAIL High-Side Power and Current Monitors The MAX4210/MAX4211 low-cost, low-power, high-side power/current monitors provide an analog output voltage proportional to the power consumed by a load by multiplying load current and source voltage. The


    Original     		PDF MAX4210/MAX4211 MAX4210 MAX4210A/B/C MAX4210D/E/F MAX4210/MAX4211 MARK PSRI "Analog Multiplier" PSRI MAX4210AETT-T MAX4210AEUA MAX4211 COUT27

    Untitled

    Abstract: No abstract text available
    Text: 19-3285; Rev 1; 5/05 KITS ATION EVALU ABLE AVAIL High-Side Power and Current Monitors The MAX4210/MAX4211 low-cost, low-power, high-side power/current monitors provide an analog output voltage proportional to the power consumed by a load by multiplying load current and source voltage. The


    Original     		PDF MAX4210/MAX4211 MAX4210 MAX4210A/B/C MAX4210D/E/F MAX4210/MAX4211

    adjustable pwm voltage regulator

    Abstract: No abstract text available
    Text: Chapter 1, Section 5 High Voltage Linear/Switchmade Power Supply ICs §5. High Voltage Linear/Switchmade Power Supply ICs SMPS Start-Up/Linear Regulator ICs % LR8 - High Input Voltage Adjustable 3-Terminal Linear R egulator.


    OCR Scan     		PDF AN-H40 HV9605C AN-H41 HV9605C) HV9606 HV9904 HV9906 SR036/SR037 adjustable pwm voltage regulator

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Power F-MOS FETs 2SK2660 Tentative Silicon N-Channel Power F-MOS Unit : rmn • Features • High-speed switching • High drain-source voltage (V qss) ■Applications • High-speed switching Absolute Maximum Ratings (Tc = 25°C) Parameter Drain-Source breakdown voltage


    OCR Scan     		PDF 2SK2660 SC-63

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Power F-MOS FETs 2SK2660 Tentative Silicon N-Channel Power F-MOS Unit : mm • Features • High-speed switching • High drain-source voltage (V d s s ) ■ Applications • High-speed switching Absolute Maximum Ratings Parameter Drain-Source breakdown voltage


    OCR Scan     		PDF 2SK2660 SC-63