Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFETS CJU04N60 600V N-Channel Power MOSFET TO-220 General Description This advanced high voltage MOSFET is designed to wighstand high energy in the avalanche mode and switch efficiently. This new
|
Original
|
O-220
CJU04N60
O-220
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFETS CJP04N60 600V N-Channel Power MOSFET TO-220 General Description This advanced high voltage MOSFET is designed to wighstand high energy in the avalanche mode and switch efficiently. This new
|
Original
|
O-220
CJP04N60
O-220
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFETS CJP04N60 600V N-Channel Power MOSFET TO-220 General Description This advanced high voltage MOSFET is designed to wighstand high energy in the avalanche mode and switch efficiently. This new
|
Original
|
O-220
CJP04N60
O-220
|
PDF
|
UTC UF730L
Abstract: UF730L-TA3-T UF730 UF730-TA3-T UF730-TF3-T
Text: UNISONIC TECHNOLOGIES CO., LTD UF730 MOSFET 5.5A, 400V, 1.0 OHM, N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The UF730 power MOSFET is designed for high voltage, high speed power switching applications such as switching power suppliess, switching adaptors.
|
Original
|
UF730
O-220
UF730
O-220F
UF730L
UF730-TA3-T
UF730L-TA3-T
UF730-TF3-T
UF730L-TF3-T
UTC UF730L
UF730L-TA3-T
UF730-TA3-T
UF730-TF3-T
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFETS CJP04N60 600V N-Channel Power MOSFET General Description This advanced high voltage MOSFET is designed to wighstand high energy in the avalanche mode and switch efficiently. This new
|
Original
|
O-220
CJP04N60
O-220
|
PDF
|
MOSFET 50V 100A TO-220
Abstract: UF840 UF840L-TA3-T UF840-TA3-T UF840-TF3-T
Text: UNISONIC TECHNOLOGIES CO., LTD UF840 MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,
|
Original
|
UF840
O-220
O-220F
UF840L
UF840-TA3-T
UF840L-TA3-T
QW-R502-047
MOSFET 50V 100A TO-220
UF840
UF840L-TA3-T
UF840-TA3-T
UF840-TF3-T
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF830 MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,
|
Original
|
UF830
O-220
O-220F
UF830L
UF830-TA3-T
UF830L-TA3-Tat
QW-R502-046
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 200V, 9A N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching
|
Original
|
UF630
O-220
O-220F
O-220F1
O-220F2
O-262
O-251
O-252
QW-R502-049
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220/220F Plastic-Encapsulate MOSFETS CJP04N60,CJPF04N60 600V N-Channel Power MOSFET General Description This advanced high voltage MOSFET is designed to wighstand high energy in the avalanche mode and switch efficiently. This new
|
Original
|
O-220/220F
CJP04N60
CJPF04N60
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 200V, 9A N-CHANNEL POWER MOSFET 1 1 TO-220 TO-251 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,
|
Original
|
UF630
O-251
O-220
O-220F
O-220F1
O-252
O-220
O-220F1
|
PDF
|
MOSFET 50V 100A TO-220
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF740-E Power MOSFET 10A, 400V, 0.55Ω N-CHANNEL POWER MOSFET 1 TO-220F TO-220 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,
|
Original
|
UF740-E
O-220F
O-220
O-220F1
O-220F2
O-263
UF740L-TA3-T
QW-R502-966.
MOSFET 50V 100A TO-220
|
PDF
|
N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V
Abstract: MOSFET 400V TO-220 TQ2 rohs UF840-TQ2-T UF840 UF840L-TA3-T UF840-TA3-T UF840-TF3-T uf840l
Text: UNISONIC TECHNOLOGIES CO., LTD UF840 Power MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET 1 DESCRIPTION 1 TO-263 TO-220 The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,
|
Original
|
UF840
O-263
O-220
O-220F
O-220F1
UF840L
UF840G
QW-R502-047
N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V
MOSFET 400V TO-220
TQ2 rohs
UF840-TQ2-T
UF840
UF840L-TA3-T
UF840-TA3-T
UF840-TF3-T
uf840l
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching
|
Original
|
UF830
O-220
O-220F1
O-220F2
O-252
O-251
O-262
O-220F
O-263
QW-R502-046
|
PDF
|
6n65g
Abstract: mosfet VDS 650V ID 6A TO 252
Text: UNISONIC TECHNOLOGIES CO., LTD 6N65 Power MOSFET 6.2A, 650V N-CHANNEL POWER MOSFET 1 1 TO-220 TO-251 DESCRIPTION The UTC 6N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche
|
Original
|
O-251
O-220
O-220F
O-220F1
O-252
QW-R502-589
6n65g
mosfet VDS 650V ID 6A TO 252
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 6N65 Power MOSFET 6.2A, 650V N-CHANNEL POWER MOSFET 1 1 TO-220 DESCRIPTION The UTC 6N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche
|
Original
|
O-220
O-220F
O-220F3
O-251
O-252
O-220F1
QW-R502-589
|
PDF
|
mosfet VDS 650V ID 6A TO 252
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 6N65 Power MOSFET 6.2A, 650V N-CHANNEL POWER MOSFET 1 1 TO-220 TO-251 DESCRIPTION The UTC 6N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche
|
Original
|
O-251
O-220
O-220F
O-220F1
O-252
QW-R502-589
mosfet VDS 650V ID 6A TO 252
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 6N65 Power MOSFET 6.2A, 650V N-CHANNEL POWER MOSFET 1 1 TO-220 TO-251 DESCRIPTION The UTC 6N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche
|
Original
|
O-220
O-251
O-220F
O-220F1
QW-R502-589
|
PDF
|
IRF820
Abstract: No abstract text available
Text: IRF820 N-channel 500V - 2.5Ω - 4A TO-220 PowerMesh II MOSFET General features Type VDSS RDS on ID IRF820 500V <0.3Ω 4A • Extremely high dv/dt capability ■ 100% avalnche tested ■ New high voltage benchmark ■ Gate charge minimized 3 1 2 TO-220
|
Original
|
IRF820
O-220
O-220
IRF820
|
PDF
|
IRF820
Abstract: JESD97 IRF8204
Text: IRF820 N-channel 500V - 2.5Ω - 4A TO-220 PowerMesh II MOSFET General features Type VDSS RDS on ID IRF820 500V <0.3Ω 4A • Extremely high dv/dt capability ■ 100% avalnche tested 3 ■ New high voltage benchmark ■ Gate charge minimized 1 TO-220 c
|
Original
|
IRF820
O-220
IRF820
JESD97
IRF8204
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N70 Power MOSFET 7A, 700V N-CHANNEL POWER MOSFET 1 TO-220F TO-220 DESCRIPTION The UTC 7N70 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
|
Original
|
O-220F
O-220
O-220F1
O-220F2
O-263
QW-R502-103.
|
PDF
|
5N60G
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 5N60 Power MOSFET 5A, 600V N-CHANNEL POWER MOSFET 1 TO-220F TO-220 DESCRIPTION The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
|
Original
|
O-220F
O-220
O-220F1
O-220F2
QW-R502-065
5N60G
|
PDF
|
5n60b
Abstract: 5N60A 5n60-b
Text: UNISONIC TECHNOLOGIES CO., LTD 5N60 MOSFET 4.5 Amps, 600/650 Volts N-CHANNEL MOSFET 1 DESCRIPTION TO-220 The UTC 5N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
|
Original
|
O-220
O-220F
5N60L
QW-R502-065
5n60b
5N60A
5n60-b
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N70 Power MOSFET 7A, 700V N-CHANNEL POWER MOSFET 1 1 TO-220F TO-220 DESCRIPTION The UTC 7N70 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
|
Original
|
O-220F
O-220
O-220F2
O-220F1
O-220F3
O-262
QW-R502-103.
|
PDF
|
utc 5n60l
Abstract: 5N60L 5N60L-TF2-T 5N60L-TN3-R 5N60 5N60G
Text: UNISONIC TECHNOLOGIES CO., LTD 5N60 Power MOSFET 5A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220F TO-220 DESCRIPTION The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
|
Original
|
O-220
O-220F
O-220F1
O-220F2
QW-R502-065
utc 5n60l
5N60L
5N60L-TF2-T
5N60L-TN3-R
5N60
5N60G
|
PDF
|
