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    HIGH VOLTAGE MOSFET Search Results

    HIGH VOLTAGE MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    HIGH VOLTAGE MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    HT0440

    Abstract: HT0638 HT0740 MOSFET DRIVER
    Text: Chapter 10 – High Voltage Telecommunication Switch/Translator ICs HT0440 HT0638 HT0740 Dual High Voltage Isolated MOSFET Driver High Voltage Electronic Line Switch High Voltage Isolated MOSFET Driver


    Original     		HT0440 HT0638 HT0740 HT0440 HT0638 HT0740 MOSFET DRIVER PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTORS <HVIC> M81725FP HIGH VOLTAGE HIGH SIDE DRIVER DESCRIPTION M81725FP is high voltage Power MOSFET and IGBT driver for high side applications. PIN CONFIGURATION TOP VIEW FEATURES ¡FLOATING SUPPLY VOLTAGE . 600V


    Original     		M81725FP M81725FP PDF

    Thermal Shut Down Functioned IGBT

    Abstract: Thermal Shut Down Functioned MOSFET VB-24 M81725FP pdp driver
    Text: MITSUBISHI SEMICONDUCTORS <HVIC> M81725FP HIGH VOLTAGE HIGH SIDE DRIVER DESCRIPTION M81725FP is high voltage Power MOSFET and IGBT driver for high side applications. PIN CONFIGURATION TOP VIEW FEATURES ¡FLOATING SUPPLY VOLTAGE . 600V


    Original     		M81725FP M81725FP Thermal Shut Down Functioned IGBT Thermal Shut Down Functioned MOSFET VB-24 pdp driver PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTORS <HVIC> M81705FP HIGH VOLTAGE HIGH SIDE DRIVER DESCRIPTION M81705FP is high voltage Power MOSFET and IGBT module driver for half bridge applications. PIN CONFIGURATION TOP VIEW FEATURES ¡FLOATING SUPPLY VOLTAGE . 600V


    Original     		M81705FP M81705FP 150mA 125mA 225mil OP8-P-225-1 PDF

    M81705FP

    Abstract: rol1 vs135 MAR 624
    Text: MITSUBISHI SEMICONDUCTORS <HVIC> M81705FP HIGH VOLTAGE HIGH SIDE DRIVER DESCRIPTION M81705FP is high voltage Power MOSFET and IGBT module driver for half bridge applications. PIN CONFIGURATION TOP VIEW FEATURES ¡FLOATING SUPPLY VOLTAGE . 600V


    Original     		M81705FP M81705FP 150mA 125mA 225mil OP8-P-225-1 rol1 vs135 MAR 624 PDF

    Untitled

    Abstract: No abstract text available
    Text: BS108 Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N−Channel TO−92 http://onsemi.com This MOSFET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage


    Original     		BS108 BS108/D PDF

    BS108ZL1G

    Abstract: BS108 PPAP MANUAL bs108 mosfet
    Text: BS108 Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N−Channel TO−92 http://onsemi.com This MOSFET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage


    Original     		BS108 BS108/D BS108ZL1G BS108 PPAP MANUAL bs108 mosfet PDF

    IX2127

    Abstract: DS-IX2127-R01 EIA-481-2 VB-12 FLUORESCENT ballast 12v
    Text: IX2127 High-Voltage Power MOSFET & IGBT Driver Driver Characteristics Parameter VOFFSET IO +/- Source/Sink Description Rating Units 600 V 250/500 mA VCSth 250 mV tON / tOFF (Typical) 100 ns The IX2127 is a high-voltage, high-speed power MOSFET and IGBT driver. High-voltage level-shift


    Original     		IX2127 IX2127 DS-IX2127-R01 DS-IX2127-R01 EIA-481-2 VB-12 FLUORESCENT ballast 12v PDF

    bs108 mosfet

    Abstract: BS108 relay driver BS108 BS108ZL1
    Text: BS108 Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N–Channel TO–92 http://onsemi.com This MOSFET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage


    Original     		BS108 r14525 BS108/D bs108 mosfet BS108 relay driver BS108 BS108ZL1 PDF

    BS108 relay driver

    Abstract: BS108ZL1G BS108 BS108G BS108ZL1 2ID-250 BS108D
    Text: BS108 Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N−Channel TO−92 http://onsemi.com This MOSFET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage


    Original     		BS108 BS108/D BS108 relay driver BS108ZL1G BS108 BS108G BS108ZL1 2ID-250 BS108D PDF

    bs108 mosfet

    Abstract: mosfet to92 high current BS108 BS-108
    Text: BS108 Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N−Channel TO−92 http://onsemi.com This MOSFET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage


    Original     		BS108 bs108 mosfet mosfet to92 high current BS108 BS-108 PDF

    Untitled

    Abstract: No abstract text available
    Text: IX2127 High-Voltage Power MOSFET & IGBT Driver Driver Characteristics Parameter VOFFSET IO +/- Source/Sink Description Rating Units 600 V 250/500 mA VCSth 250 mV tON / tOFF (Typical) 100 ns The IX2127 is a high-voltage, high-speed power MOSFET and IGBT driver. High-voltage level-shift


    Original     		IX2127 IX2127 DS-IX2127-R02 PDF

    IX2127

    Abstract: J-STD-033 VB-12
    Text: IX2127 High-Voltage Power MOSFET & IGBT Driver Driver Characteristics Parameter VOFFSET IO +/- Source/Sink Description Rating Units 600 V 250/500 mA VCSth 250 mV tON / tOFF (Typical) 100 ns The IX2127 is a high-voltage, high-speed power MOSFET and IGBT driver. High-voltage level-shift


    Original     		IX2127 IX2127 DS-IX2127-R02 J-STD-033 VB-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: IX2127 High-Voltage Power MOSFET & IGBT Driver Driver Characteristics Parameter VOFFSET IO +/- Source/Sink Description Rating Units 600 V 250/500 mA VCSth 250 mV tON / tOFF (Typical) 100 ns The IX2127 is a high-voltage, high-speed power MOSFET and IGBT driver. High-voltage level-shift


    Original     		IX2127 IX2127 DS-IX2127-R02 PDF

    CHT-PLA8543C

    Abstract: No abstract text available
    Text: The Leader in High Temperature Semiconductor Solutions Version: 3.1 CHT-NEPTUNE PRELIMINARY DATASHEET High-Temperature High Voltage, Silicon Carbide MOSFET General description Features high-temperature, • Specified from -55 to +225°C Tj high-voltage, Silicon Carbide MOSFET


    Original     		O-257 150make PDS-111102 20-Sep-13 CHT-PLA8543C PDF

    LM5104

    Abstract: 100V half bridge mosfet driver soic8
    Text: LM5104 LM5104 High Voltage Half-Bridge Gate Driver with Adaptive Delay Literature Number: SNVS269B LM5104 High Voltage Half-Bridge Gate Driver with Adaptive Delay General Description Features The LM5104 High Voltage Gate Driver is designed to drive both the high side and the low side N-Channel MOSFETs in


    Original     		LM5104 LM5104 SNVS269B 100V half bridge mosfet driver soic8 PDF

    Untitled

    Abstract: No abstract text available
    Text: LM5102 LM5102 High Voltage Half-Bridge Gate Driver with Programmable Delay Literature Number: SNVS268 LM5102 High Voltage Half-Bridge Gate Driver with Programmable Delay General Description The LM5102 High Voltage Gate Driver is designed to drive both the high side and the low side N-Channel MOSFETs in


    Original     		LM5102 LM5102 SNVS268 PDF

    Untitled

    Abstract: No abstract text available
    Text: SM74104 SM74104 High Voltage Half-Bridge Gate Driver with Adaptive Delay Literature Number: SNOSBA3B SM74104 High Voltage Half-Bridge Gate Driver with Adaptive Delay General Description Features The SM74104 High Voltage Gate Driver is designed to drive both the high side and the low side N-Channel MOSFETs in


    Original     		SM74104 SM74104 PDF

    Amplifiers

    Abstract: 12v 100w amplifier mosfet 20mhz power piezo amplifier driver -audio input 220v and output 4v power amplifier for sonar sonar 200khz QA451 QA453 alarm sonar
    Text: QA 452 High Voltage Amplifier Rev 1.0 Shortform Datasheet Features: • High Voltage, High Speed Amplifier • JFET Input • High Gain Bandwith Product: 20MHz • Rugged MOSFET output stage • Shutdown w. high impedance output and reduced current consumption


    Original     		20MHz 1Vpp/200kHz/50 Amplifiers 12v 100w amplifier mosfet 20mhz power piezo amplifier driver -audio input 220v and output 4v power amplifier for sonar sonar 200khz QA451 QA453 alarm sonar PDF

    UCC27201A-DIE

    Abstract: No abstract text available
    Text: UCC27201A-DIE www.ti.com SLUSB70 – AUGUST 2012 HIGH FREQUENCY, HIGH-SIDE/LOW-SIDE DRIVER FEATURES 1 • • • • • Drives Two N-Channel MOSFETs in High-Side/Low-Side Configuration Maximum Boot Voltage Maximum VDD Voltage On-Chip RD Bootstrap Diode Under Voltage Lockout for High-Side and


    Original     		UCC27201A-DIE SLUSB70 UCC27201A UCC27201A-DIE PDF

    smps 1kW

    Abstract: smps 600W c4 600W power amplifier schematic diagrams 5010LLC 13.56Mhz class e power amplifier mosfet power hf 1kw 28N0765-100 Class B power amplifier, 13.56MHz 13.56MHZ mosfet hf class AB power amplifier mosfet
    Text: APT0001 By: Richard Frey, P.E. High Voltage, High Efficiency MOSFET RF Amplifiers – Design Procedure and Examples 1 High Voltage, High Efficiency MOSFET RF Amplifiers – Design Procedure and Examples Introduction With the improvement in high power MOSFETs of late


    Original     		APT0001 smps 1kW smps 600W c4 600W power amplifier schematic diagrams 5010LLC 13.56Mhz class e power amplifier mosfet power hf 1kw 28N0765-100 Class B power amplifier, 13.56MHz 13.56MHZ mosfet hf class AB power amplifier mosfet PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTORS <HVIC> M81722FP HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M81722FP is high voltage Power MOSFET and IGBT driver for half bridge applications. PIN CONFIGURATION TOP VIEW FEATURES ¡FLOATING SUPPLY VOLTAGE . 600V


    Original     		M81722FP M81722FP PDF

    UCC27201A-DIE

    Abstract: No abstract text available
    Text: UCC27201A-DIE www.ti.com SLUSB70 – AUGUST 2012 HIGH FREQUENCY, HIGH-SIDE/LOW-SIDE DRIVER FEATURES 1 • • • • • Drives Two N-Channel MOSFETs in High-Side/Low-Side Configuration Maximum Boot Voltage Maximum VDD Voltage On-Chip RD Bootstrap Diode Under Voltage Lockout for High-Side and


    Original     		UCC27201A-DIE SLUSB70 UCC27201A UCC27201A-DIE PDF

    Half Bridge Driver

    Abstract: VB-24 M81722 M81722FP
    Text: MITSUBISHI SEMICONDUCTORS <HVIC> M81722FP HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M81722FP is high voltage Power MOSFET and IGBT driver for half bridge applications. PIN CONFIGURATION TOP VIEW FEATURES ¡FLOATING SUPPLY VOLTAGE . 600V


    Original     		M81722FP M81722FP Half Bridge Driver VB-24 M81722 PDF