MA690
Abstract: No abstract text available
Text: MA111 Fast Recovery Diodes FRD MA690 Silicon planer type Unit : mm 16.7±0.3 High reverse voltage VR 4.0 Fast reverse recovery time trr 14.0±0.5 ● 1.4±0.1 Solder Dip Low forward voltage V F ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo
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MA111
MA690
MA690
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MA689
Abstract: No abstract text available
Text: MA111 Fast Recovery Diodes FRD MA689 Silicon planer type Unit : mm 16.7±0.3 High reverse voltage VR 5.5±0.2 4.0 Fast reverse recovery time trr 14.0±0.5 ● 1.4±0.1 Solder Dip Low forward voltage V F ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo
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MA111
MA689
MA689
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Untitled
Abstract: No abstract text available
Text: GI1-1200GP thru GI1-1600GP Vishay General Semiconductor Miniature High Voltage Glass Passivated Rectifier FEATURES • Superectifier structure for High Reliability application • Cavity-free glass-passivated junction • Low forward voltage drop ed* t
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GI1-1200GP
GI1-1600GP
DO-204AC
DO-15)
MIL-S-19500
2002/95/EC
2002/96/EC
08-Apr-05
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MA182
Abstract: MA2B182
Text: Switching Diodes MA2B182 MA182 Silicon epitaxial planar type Unit : mm φ 0.56 max. For high-voltage switching circuits, small power rectification 1 • Features 4.5 max. ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low
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MA2B182
MA182)
DO-35
MA182
MA2B182
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ED 05 Diode
Abstract: ED 03 Diode
Text: MITSUBISHI FAST RECOVERY DIODE MODULES RM25HG-24S HIGH SPEED SWITCHING USE NON-INSULATED TYPE ed RM25HG-24S DC current . 25A Repetitive peak reverse voltage . 1200V • trr Reverse recovery time . 0.3µs
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RM25HG-24S
20MIN.
ED 05 Diode
ED 03 Diode
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ED 05 Diode
Abstract: ED 03 Diode
Text: MITSUBISHI FAST RECOVERY DIODE MODULES RM50HG-12S HIGH SPEED SWITCHING USE NON-INSULATED TYPE ed RM50HG-12S DC current . 50A Repetitive peak reverse voltage . 600V • trr Reverse recovery time . 0.2µs
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RM50HG-12S
20MIN.
ED 05 Diode
ED 03 Diode
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1N4586GP
Abstract: No abstract text available
Text: 1N4383GP thru 1N4385GP, 1N4585GP & 1N4586GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for High Reliability application • Cavity-free glass-passivated junction • Low forward voltage drop ed*
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1N4383GP
1N4385GP,
1N4585GP
1N4586GP
DO-204AC
DO-15)
MIL-S-19500
2002/95/EC
2002/96/EC
08-Apr-05
1N4586GP
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Untitled
Abstract: No abstract text available
Text: GI250-1 thru GI250-4 Vishay General Semiconductor High Voltage Glass Passivated Junction Rectifier FEATURES • Superectifier structure for High Reliability application • Cavity-free glass-passivated junction • Low leakage current ed* t n e Pat *Glass Encapsulation
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GI250-1
GI250-4
MIL-S-19500
DO-204AL
DO-41)
2002/95/EC
2002/96/EC
DO-204AL,
08-Apr-05
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20E-3
Abstract: DO-204AL GP02-20 GP02-40 JESD22-B102 J-STD-002
Text: GP02-20 thru GP02-40 Vishay General Semiconductor High Voltage Glass Passivated Junction Rectifierr FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low leakage current ed* t n e Pat *Glass Encapsulation
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GP02-20
GP02-40
MIL-S-19500
DO-204AL
DO-41)
2002/95/EC
2002/96/EC
18-Jul-08
20E-3
DO-204AL
GP02-40
JESD22-B102
J-STD-002
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20E-3
Abstract: No abstract text available
Text: GP02-20 thru GP02-40 Vishay General Semiconductor High Voltage Glass Passivated Junction Rectifierr FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low leakage current ed* t n e Pat *Glass Encapsulation
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GP02-20
GP02-40
DO-204AL
DO-41)
MIL-S-19500
2002/95/EC
2002/96/EC
DO-204AL,
08-Apr-05
20E-3
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GP02-40
Abstract: 20E-3 DO-204AL GP02-20 JESD22-B102D J-STD-002B
Text: GP02-20 thru GP02-40 Vishay General Semiconductor High Voltage Glass Passivated Junction Rectifierr FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction ed* t n e Pat *Glass Encapsulation technique is covered by
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GP02-20
GP02-40
MIL-S-19500
DO-204AL
DO-41)
2002/95/EC
2002/96/EC
08-Apr-05
GP02-40
20E-3
DO-204AL
JESD22-B102D
J-STD-002B
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GI250-4
Abstract: DO-204AL GI250-1 JESD22-B102D J-STD-002B
Text: GI250-1 thru GI250-4 Vishay General Semiconductor High Voltage Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low leakage current ed* t n e Pat *Glass Encapsulation
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GI250-1
GI250-4
MIL-S-19500
DO-204AL
DO-41)
2002/95/EC
2002/96/EC
08-Apr-05
GI250-4
DO-204AL
JESD22-B102D
J-STD-002B
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DO-204AL
Abstract: GI250-1 GI250-4 JESD22-B102D J-STD-002B
Text: GI250-1 thru GI250-4 Vishay General Semiconductor High Voltage Glass Passivated Junction Rectifier FEATURES • Superectifier structure for High Reliability application • Cavity-free glass-passivated junction • Low leakage current ed* t n e Pat *Glass Encapsulation
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GI250-1
GI250-4
MIL-S-19500
DO-204AL
DO-41)
2002/95/EC
2002/96/EC
19-May-06
DO-204AL
GI250-4
JESD22-B102D
J-STD-002B
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GP02-40
Abstract: 20E-3 DO-204AL GP02-20 JESD22-B102D J-STD-002B
Text: GP02-20 thru GP02-40 Vishay General Semiconductor High Voltage Glass Passivated Junction Rectifierr FEATURES • Superectifier structure for High Reliability application • Cavity-free glass-passivated junction ed* t n e Pat *Glass Encapsulation technique is covered by
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GP02-20
GP02-40
MIL-S-19500
DO-204AL
DO-41)
2002/95/EC
2002/96/EC
08-Apr-05
GP02-40
20E-3
DO-204AL
JESD22-B102D
J-STD-002B
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CDSH3-221-G
Abstract: No abstract text available
Text: COAICHII» Small Signal Switching Diodes SMO Diodes CDSH3-221-G Voltage: 20 Volts Average forward c u rre n t: 100 mA RoHS Device Features D es ig n ed for m ounting on sm all s u rfa ce . High s p e ed sw itching. High m ounting capab ility, strong surge
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CDSH3-221-G
OT-323,
MIL-STD-750,
OT-523
CDSH3-221-G)
QW-B0010
CDSH3-221-G
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smd diode Uj
Abstract: No abstract text available
Text: COAICHII» Small Signal Schottky Diodes SMQDIodes S pocialisi CDBH3-54/S/C/A-G Reverse Voltage: 30 Volts Forward Current: 200mA RoHS Device Features D es ig n ed for m ounting on sm all s u rfa ce . High s p e ed sw itching a p p lica tio n , circuit pro tectio n .
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CDBH3-54/S/C/A-G
200mA
OT-23,
MIL-STD-750,
OT-523
QW-BA010
CDBH3-54/S/C/A-G)
smd diode Uj
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ca3141e
Abstract: No abstract text available
Text: f ü H A R R CA3141 IS High-Voltage Diode Array For Commercial, Industrial & Military Applications August 1991 Features D escription • M a tch ed M on olithic C o n s tru c tio n - V p for Each D iode Pair M a tch ed to W ithin 0 .5 5 m V Typ at Ip = 1m A
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CA3141
CA3141E
CA3141
16-lead
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Untitled
Abstract: No abstract text available
Text: COMCHIP Small Signal Schottky Diodes S M D D IO D E S P E C IA L IS T CDBV3-00340S/C/A-G Reverse Voltage: 40 Volts Forward Current: 30mA RoHS Device Features D es ig n ed for m ounting on sm all s u rfa ce . High s p e ed sw itching a p p lica tio n , circuit
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CDBV3-00340S/C/A-G
OT-323,
MIL-STD-750,
00340S
00340C
0340A
OT-323
CDBV3-00340S/C/A-G)
QW-BA004
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QW-BA005
Abstract: No abstract text available
Text: COMCHIP Small Signal Schottky Diodes M D D IO D E S P E C IA L IS T CDBV3-40/S/C/A-G Reverse Voltage: 40 Volts Forward Current: 200mA RoHS Device Features D es ig n ed for m ounting on sm all s u rfa ce . High s p e ed sw itching a p p lica tio n , circuit
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CDBV3-40/S/C/A-G
200mA
OT-23,
MIL-STD-750,
OT-323
QW-BA005
QW-BA005
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circuit diagram induction heating
Abstract: CM400DY-66H nf 0036 diode HVIGBT induction heating circuit diagram
Text: MITSUBISHI HVIGBT MODULES CM400DY-66H ^,sr$^ed So^ev HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM400DY-66H • le .400A • V c e s . 3 3 0 0 V
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CM400DY-66H
circuit diagram induction heating
nf 0036 diode
HVIGBT
induction heating circuit diagram
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LM2924J
Abstract: No abstract text available
Text: LM392/LM2924 Low Power Operational Amplifier/Voltage Comparator General Description Features The LM392 series consists of 2 independent building block circuits. One is a high gain, internally frequency compensat ed operational amplifier, and the other is a precision voltage
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LM392/LM2924
LM392/LM2924
LM392
LM193
LM158
LM2924J
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LM292
Abstract: No abstract text available
Text: LM392/LM2924 Low Power Operational Amplifier/Voltage Comparator General Description Features The LM392 series consists of 2 independent building block circuits. One is a high gain, internally frequency compensat ed operational amplifier, and the other is a precision voltage
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LM392/LM2924
LM392/LM2924
LM392
LM193
LM158
LM292
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Lm192h
Abstract: LM192
Text: Corporation LM192/LM392, LM2924 Low Power Operational Amplifier/Voltage Comparator General Description Features The LM192 series consists of 2 independent building block circuits. One is a high gain, internally frequency compensat ed operational amplifier, and the other is a precision voltage
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LM192/LM392/LM2924
LM192/LM392,
LM2924
LM192
TL/H/7793-2
LM193
LM158
Lm192h
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BZX85
Abstract: No abstract text available
Text: Te m ic BZX85C. TELEFUNKEN Semiconductors Silicon Epitaxial Planar Z-Diodes Features • Sharp ed ge in reverse characteristics • L ow reverse current • L ow noise • Very high stability • A vailable with tighter tolerances Applications W9.169 Voltage stabilization
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BZX85C.
BZX85
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