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    HIGH VOLTAGE DIODE KV 50 MA Search Results

    HIGH VOLTAGE DIODE KV 50 MA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B7PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    HIGH VOLTAGE DIODE KV 50 MA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IEC61000

    Abstract: BAR90-02LRH IEC61000-4-4 diode E8 package marking
    Text: ESD5V3L1U-02LRH Low Capacitance TVS Diode • ESD / transient protection of high-speed data lines up to: IEC61000-4-2 ESD : ±30 kV (air / contact) IEC61000-4-4 (EFT): 4 kV / 80 A (5/50 ns) IEC61000-4-5 (surge): 6 A (8/20 µs) • Reverse working voltage: 5.3 V max.


    Original     		PDF ESD5V3L1U-02LRH IEC61000-4-2 IEC61000-4-4 IEC61000-4-5 IEC61000 BAR90-02LRH IEC61000-4-4 diode E8 package marking

    marking Z1

    Abstract: BCR847BF
    Text: ESD5V3U2U. Ultra-Low Capacitance ESD Diode Array • ESD / transient protection of high-speed data lines exceeding IEC61000-4-2 ESD : 20 kV (air / contact) IEC61000-4-4 (EFT): 40 A (5/50 ns) IEC61000-4-5 (surge): 3 A (8/20 µs) • Max. working voltage: 5.3 V


    Original     		PDF IEC61000-4-2 IEC61000-4-4 IEC61000-4-5 ESD5V3U2U-03F ESD5V3U2U-03LRH marking Z1 BCR847BF

    Untitled

    Abstract: No abstract text available
    Text: ESD5V3U2U. Ultra-Low Capacitance ESD Diode Array • ESD / transient protection of high-speed data lines exceeding IEC61000-4-2 ESD : 20 kV (air / contact) IEC61000-4-4 (EFT): 40 A (5/50 ns) IEC61000-4-5 (surge): 3 A (8/20 µs) • Max. working voltage: 5.3 V


    Original     		PDF IEC61000-4-2 IEC61000-4-4 IEC61000-4-5 ESD5V3U2U-03F ESD5V3U2U-03Ls

    ESD5V3U2U-03F

    Abstract: ESD5V3U2U-03LRH IEC61000-4-4 MARKING Z1
    Text: ESD5V3U2U. Ultra-Low Capacitance ESD Diode Array • ESD / transient protection of high-speed data lines exceeding IEC61000-4-2 ESD : 20 kV (air / contact) IEC61000-4-4 (EFT): 40 A (5/50 ns) IEC61000-4-5 (surge): 3 A (8/20 µs) • Max. working voltage: 5.3 V


    Original     		PDF IEC61000-4-2 IEC61000-4-4 IEC61000-4-5 ESD5V3U2U-03F ESD5V3U2U-03F ESD5V3U2U-03LRH IEC61000-4-4 MARKING Z1

    BCR847BF

    Abstract: No abstract text available
    Text: ESD5V3U2U. Ultra-Low Capacitance ESD Diode Array • ESD / transient protection of high-speed data lines exceeding IEC61000-4-2 ESD : 20 kV (air / contact) IEC61000-4-4 (EFT): 40 A (5/50 ns) IEC61000-4-5 (surge): 3 A (8/20 µs) • Max. working voltage: 5.3 V


    Original     		PDF IEC61000-4-2 IEC61000-4-4 IEC61000-4-5 ESD5V3U2U-03F ESD5V3U2U-03LRH BCR847BF

    2E14

    Abstract: 4h sic
    Text: Drift-Free, 50 A, 10 kV 4H-SiC PiN Diodes with Improved Device Yields Mrinal K. Dasa, Joseph J. Sumakeris, Brett A. Hull, Jim Richmond, Sumi Krishnaswami and Adrian R. Powell Cree, Inc., 4600 Silicon Drive, Durham, NC, 27703, USA a Mrinal_Das@Cree.com Keywords: PiN Diode, High Voltage, Vf drift, BPD, device yield


    Original     		PDF N00014-02-C-0302, 2E14 4h sic

    TNY254 equivalent

    Abstract: TNY254 TNY254 pn NEC varistor 022 Siemens sfh615 optocoupler TM501 TNY254P harris mov 120 vac TNY254 internal varistor 222
    Text: Engineering Prototype Report EPR-000008 Title 1.2 W, Universal Input, Non-isolated, TNY254 (EP8) Customer Home Appliance Market Author S.L. Document Number EPR-000008 Date 08-May-2001 Revision 10 Abstract This document presents the specification, schematic & BOM, inductor calculation, test


    Original     		PDF EPR-000008) TNY254 EPR-000008 08-May-2001 23-April-2001 TNY254 equivalent TNY254 TNY254 pn NEC varistor 022 Siemens sfh615 optocoupler TM501 TNY254P harris mov 120 vac TNY254 internal varistor 222

    dil reed relay

    Abstract: V23100-V4605-A010 V23100-V4015-A010 V23100-V4015-A000 V23100-V4005-A000 V23100-V4312-C000 V23100-V4 V23100 V23100V4312C000 2-1393763-8 V23100-V4305C010
    Text: Telecom-, Signal and RF Relays 108-98011 Rev. C Reed V23100-V4 Relay Telecom-, Signal and RF Relays Reed V23100-V4 Relay 108-98011 • July, 07 Rev. C • ECOC: JM10 Telecom-, Signal and RF Relays 108-98011 Rev. C Reed V23100-V4 Relay Disclaimer While Tyco Electronics has made every reasonable effort


    Original     		PDF V23100-V4 V23100-V4 CH-8804 D-13629 CZ-541 dil reed relay V23100-V4605-A010 V23100-V4015-A010 V23100-V4015-A000 V23100-V4005-A000 V23100-V4312-C000 V23100 V23100V4312C000 2-1393763-8 V23100-V4305C010

    PESDXL5UV

    Abstract: SOT666 package philips diode arrays
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PESD3V3L5UV; PESD5V0L5UV Low capacitance 5-fold ESD protection diode arrays in SOT666 package Product specification 2004 Mar 23 Philips Semiconductors Product specification Low capacitance 5-fold ESD protection diode arrays in SOT666 package


    Original     		PDF M3D744 OT666 OT666 SCA76 R76/01/pp11 PESDXL5UV SOT666 package philips diode arrays

    PESDXL5UY

    Abstract: sot363 marking K4 MAR233 philips diode arrays
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 PESD3V3L5UY; PESD5V0L5UY Low capacitance 5-fold ESD protection diode arrays in SOT363 package Product specification 2004 Mar 23 Philips Semiconductors Product specification Low capacitance 5-fold ESD protection


    Original     		PDF MBD128 OT363 OT363 SCA76 R76/01/pp11 PESDXL5UY sot363 marking K4 MAR233 philips diode arrays

    6.5kV IGBT

    Abstract: 6.5kV IGBT loss igbt 6.5kv igbt3 igbt2 infineon L280N A-9500 igbt2 infineon infineon igbt3 ohm HIGH VOLTAGE DIODE 3.3kv 3.3kv diode
    Text: 6.5kV IGBT and FWD with Trench and VLD Technology for reduced Losses and high dynamic Ruggedness 1 2) 2) 3) 3) Thomas Duetemeyer , Josef-Georg Bauer , Elmar Falck , Carsten Schaeffer , G. Schmidt , 1) Burkhard Stemmer , 1 Infineon Technologies AG, Max-Planck-Straße 5, D-59581 Warstein Germany


    Original     		PDF D-59581 D-85579 6.5kV IGBT 6.5kV IGBT loss igbt 6.5kv igbt3 igbt2 infineon L280N A-9500 igbt2 infineon infineon igbt3 ohm HIGH VOLTAGE DIODE 3.3kv 3.3kv diode

    M3D08

    Abstract: PESD12V2S2UT PESD15V2S2UT marking code diode u4 marking code u1
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D08 PESDxS2UT series Double ESD protection diode Product specification 2003 May 15 Philips Semiconductors Product specification Double ESD protection diode PESDxS2UT series FEATURES DESCRIPTION • Uni-directional ESD protection of 2-lines or bi-directional


    Original     		PDF M3D08 RS232 PESD12V2S2UT PESD15V2S2UT PESD24V2S2UT SCA75 613514/01/pp8 M3D08 marking code diode u4 marking code u1

    076E03

    Abstract: MARKING SO8
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PESD5V0L7BS Low capacitance 7-fold bi-directional ESD protection diode array in SO8 package Product specification 2004 Mar 15 Philips Semiconductors Product specification Low capacitance 7-fold bi-directional ESD protection diode array in SO8 package


    Original     		PDF SCA76 R76/01/pp10 076E03 MARKING SO8

    automatic change over switch circuit diagram

    Abstract: RELECO c3 a30 fx 24 v dc RELECO C3-A30 FX 24 VDC RELECO C4-A40 C3-A30, RELECO C5-A30, RELECO C2-A20, RELECO C9-A41, RELECO IEC 947 EN60947 RELECO C4-A40 DX
    Text: Benefits of the new Five colours for an easier identification of coil voltage AC red: 230 Vac North America 120 Vac dark red: others Vac system Push-to-Test-Pull-to-Lock button (PTPL) grey: Vac/dc DC C dark blue: others Vdc Coil voltage marked on the top face of the relay


    Original     		PDF

    IP4056

    Abstract: SIMCARD Schematic Hdmi to micro usb wiring diagram ip4065cx11 SD-Card MMC IP4826CX12 IP4056CX8 IP4058CX8 IP5002CX8 back2back diode
    Text: Integrated Discretes Interface conditioning and interface protection in mobile appliances Rev. 8.1 — 9 March 2011 Brochure Document information Info Content Keywords Integrated Discretes, EMI filter, ESD protection, chip scale package CSP , level shifting, memory card, SD memory card, MMC, T-flash,


    Original     		PDF

    VBUS051BD-HD1

    Abstract: LLP1006-2L VBUS051BD esdprotection
    Text: VBUS051BD-HD1 Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • • • • 1 2 20856 20855 MARKING example only • XY • • • 21121 Bar = cathode marking Y = type code (see table below) X = date code Ultra compact LLP1006-2L package


    Original     		PDF VBUS051BD-HD1 LLP1006-2L 18-Jul-08 VBUS051BD-HD1 VBUS051BD esdprotection

    R7110U-40

    Abstract: pdf of 741 ic telephone hybrid TPMH1239E03 E678-12M
    Text: COMPACT HYBRID PHOTO-DETECTOR PRELIMINARY DATA SEPT. 2000 FEATURES with Si-Avalanche Diode Target R7110U-40 APPLICATIONS ● High Q.E. from 450 to 650 nm ● Low Excess Noise ● High Gain ● Operable in High Magnetic Fields ● Low Hysteresis ● High Energy Physics


    Original     		PDF R7110U-40 E678-12M SE-171-41 TPMH1239E03 R7110U-40 pdf of 741 ic telephone hybrid TPMH1239E03 E678-12M

    ortec

    Abstract: ic 741 DIODE E678-12M pdf of 741 ic telephone hybrid R7110U-07 TPMH1174E04 ortec 142 R7110
    Text: COMPACT HYBRID PHOTO-DETECTOR with Si-Avalanche Diode Target PRELIMINARY DATA SEPT. 2000 FEATURES R7110U-07 APPLICATIONS ● Low excess noise ● High gain ● Operable in high magnetic fields ● Low hysteresis ● High energy physics ● Medical ● Other high precision measurements


    Original     		PDF R7110U-07 E678-12M SE-171-41 TPMH1174E04 ortec ic 741 DIODE E678-12M pdf of 741 ic telephone hybrid R7110U-07 TPMH1174E04 ortec 142 R7110

    BZX93

    Abstract: BZX90 BY409 BYX35 BY209 BZX91 BY209 A high voltage rectifier diode 1N82S BZX90 3.3
    Text: Diodes low power high voltage diodes I fiav max. Tamb = 3 5°C T oh= 50 C <mA) m A) V rwm max. <kV> Type No. Description 2.5 - B Y182 12 E.H .T. rectifiers in plastic envelopes. 2.5 - B Y 209 11.5 E .H .T. soft-recovery re ctifie r diode. 2,5 - B Y 409


    OCR Scan     		PDF BY209 BY409 BYX35 BYX90 BYX91-90K -120K -150K h--22-> crt6-25 BZX93 BZX90 BZX91 BY209 A high voltage rectifier diode 1N82S BZX90 3.3

    transistor fn 1016

    Abstract: No abstract text available
    Text: P roduct sp e cifica tio n P h ilip s S em icon ducto rs Wide body, high isolation optocouplers CNW82/CNW83 FEATURES • Wide body DIL encapsulation, with a pin distance of 10.16 mm • Minimum creepage distance 10 mm • High current transfer ratio and low saturation voltage, making


    OCR Scan     		PDF CNW82/CNW83 E90700 BS415 BS7002 82/CNW bbS3T31 bb53T31 DD3S34T transistor fn 1016

    CNW83

    Abstract: CNW82 phototransistor philips BS415 BS7002 UBB03
    Text: Product specification Philips S em iconductors Wide body, high isolation optocouplers CNW82/CNW83 FEATURES • Wide body DIL encapsulation, with a pin distance of 10.16 mm • Minimum creepage distance 10 mm • High current transfer ratio and low saturation voltage, making


    OCR Scan     		PDF CNW82/CNW83 CNW82 CNW83 OT228 CNW83. CNW82 bbS3131 7Z2406J phototransistor philips BS415 BS7002 UBB03

    234 optocoupler

    Abstract: SOT230
    Text: Product specification Philips Sem iconductors High-voltage optocoupier CNX62A FEATURES • High current transfer ratio and a low saturation voltage, making the devices suitable for use with TTL integrated circuits • High degree of AC and DC Insulation 3750 V (RMS and


    OCR Scan     		PDF CNX62A CNX62A OT230 OT230 BS415 BS7002 234 optocoupler SOT230

    Transistor 2TY

    Abstract: No abstract text available
    Text: H11B255 D U A L IT Y T E C H N O L O G I E S CORP S7E ]> 74t.bflSl O O D M bM l 3T3 OPTOCOUPLER Optically coupled isolator consisting of an infrared emitting GaAs diode and an npn silicon photoDarlington transistor. Features • High maximum output voltage


    OCR Scan     		PDF H11B255 74bbfl51 OT212. 74bbflSl 0DD4fl03 SA048-2 Transistor 2TY

    CNX82A

    Abstract: philips cnx82a
    Text: P h ilip s S em ico n d u cto rs Product specification CNX82A/CNX83A High-voltage optocouplers FEATURES • High current transfer ratio and low saturation voltage, making the devices suitable tor use with TTL integrated circuits • High degree of A C and DC


    OCR Scan     		PDF CNX82A/CNX83A CNX82A CNX83Aare OT231 CNX83A. E90700 philips cnx82a