IEC61000
Abstract: BAR90-02LRH IEC61000-4-4 diode E8 package marking
Text: ESD5V3L1U-02LRH Low Capacitance TVS Diode • ESD / transient protection of high-speed data lines up to: IEC61000-4-2 ESD : ±30 kV (air / contact) IEC61000-4-4 (EFT): 4 kV / 80 A (5/50 ns) IEC61000-4-5 (surge): 6 A (8/20 µs) • Reverse working voltage: 5.3 V max.
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ESD5V3L1U-02LRH
IEC61000-4-2
IEC61000-4-4
IEC61000-4-5
IEC61000
BAR90-02LRH
IEC61000-4-4
diode E8 package marking
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marking Z1
Abstract: BCR847BF
Text: ESD5V3U2U. Ultra-Low Capacitance ESD Diode Array • ESD / transient protection of high-speed data lines exceeding IEC61000-4-2 ESD : 20 kV (air / contact) IEC61000-4-4 (EFT): 40 A (5/50 ns) IEC61000-4-5 (surge): 3 A (8/20 µs) • Max. working voltage: 5.3 V
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IEC61000-4-2
IEC61000-4-4
IEC61000-4-5
ESD5V3U2U-03F
ESD5V3U2U-03LRH
marking Z1
BCR847BF
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Untitled
Abstract: No abstract text available
Text: ESD5V3U2U. Ultra-Low Capacitance ESD Diode Array • ESD / transient protection of high-speed data lines exceeding IEC61000-4-2 ESD : 20 kV (air / contact) IEC61000-4-4 (EFT): 40 A (5/50 ns) IEC61000-4-5 (surge): 3 A (8/20 µs) • Max. working voltage: 5.3 V
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IEC61000-4-2
IEC61000-4-4
IEC61000-4-5
ESD5V3U2U-03F
ESD5V3U2U-03Ls
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ESD5V3U2U-03F
Abstract: ESD5V3U2U-03LRH IEC61000-4-4 MARKING Z1
Text: ESD5V3U2U. Ultra-Low Capacitance ESD Diode Array • ESD / transient protection of high-speed data lines exceeding IEC61000-4-2 ESD : 20 kV (air / contact) IEC61000-4-4 (EFT): 40 A (5/50 ns) IEC61000-4-5 (surge): 3 A (8/20 µs) • Max. working voltage: 5.3 V
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IEC61000-4-2
IEC61000-4-4
IEC61000-4-5
ESD5V3U2U-03F
ESD5V3U2U-03F
ESD5V3U2U-03LRH
IEC61000-4-4
MARKING Z1
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PDF
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BCR847BF
Abstract: No abstract text available
Text: ESD5V3U2U. Ultra-Low Capacitance ESD Diode Array • ESD / transient protection of high-speed data lines exceeding IEC61000-4-2 ESD : 20 kV (air / contact) IEC61000-4-4 (EFT): 40 A (5/50 ns) IEC61000-4-5 (surge): 3 A (8/20 µs) • Max. working voltage: 5.3 V
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IEC61000-4-2
IEC61000-4-4
IEC61000-4-5
ESD5V3U2U-03F
ESD5V3U2U-03LRH
BCR847BF
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2E14
Abstract: 4h sic
Text: Drift-Free, 50 A, 10 kV 4H-SiC PiN Diodes with Improved Device Yields Mrinal K. Dasa, Joseph J. Sumakeris, Brett A. Hull, Jim Richmond, Sumi Krishnaswami and Adrian R. Powell Cree, Inc., 4600 Silicon Drive, Durham, NC, 27703, USA a Mrinal_Das@Cree.com Keywords: PiN Diode, High Voltage, Vf drift, BPD, device yield
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N00014-02-C-0302,
2E14
4h sic
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TNY254 equivalent
Abstract: TNY254 TNY254 pn NEC varistor 022 Siemens sfh615 optocoupler TM501 TNY254P harris mov 120 vac TNY254 internal varistor 222
Text: Engineering Prototype Report EPR-000008 Title 1.2 W, Universal Input, Non-isolated, TNY254 (EP8) Customer Home Appliance Market Author S.L. Document Number EPR-000008 Date 08-May-2001 Revision 10 Abstract This document presents the specification, schematic & BOM, inductor calculation, test
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EPR-000008)
TNY254
EPR-000008
08-May-2001
23-April-2001
TNY254 equivalent
TNY254
TNY254 pn
NEC varistor 022
Siemens sfh615 optocoupler
TM501
TNY254P
harris mov 120 vac
TNY254 internal
varistor 222
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PDF
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dil reed relay
Abstract: V23100-V4605-A010 V23100-V4015-A010 V23100-V4015-A000 V23100-V4005-A000 V23100-V4312-C000 V23100-V4 V23100 V23100V4312C000 2-1393763-8 V23100-V4305C010
Text: Telecom-, Signal and RF Relays 108-98011 Rev. C Reed V23100-V4 Relay Telecom-, Signal and RF Relays Reed V23100-V4 Relay 108-98011 • July, 07 Rev. C • ECOC: JM10 Telecom-, Signal and RF Relays 108-98011 Rev. C Reed V23100-V4 Relay Disclaimer While Tyco Electronics has made every reasonable effort
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V23100-V4
V23100-V4
CH-8804
D-13629
CZ-541
dil reed relay
V23100-V4605-A010
V23100-V4015-A010
V23100-V4015-A000
V23100-V4005-A000
V23100-V4312-C000
V23100
V23100V4312C000 2-1393763-8
V23100-V4305C010
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PDF
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PESDXL5UV
Abstract: SOT666 package philips diode arrays
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PESD3V3L5UV; PESD5V0L5UV Low capacitance 5-fold ESD protection diode arrays in SOT666 package Product specification 2004 Mar 23 Philips Semiconductors Product specification Low capacitance 5-fold ESD protection diode arrays in SOT666 package
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M3D744
OT666
OT666
SCA76
R76/01/pp11
PESDXL5UV
SOT666 package
philips diode arrays
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PDF
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PESDXL5UY
Abstract: sot363 marking K4 MAR233 philips diode arrays
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 PESD3V3L5UY; PESD5V0L5UY Low capacitance 5-fold ESD protection diode arrays in SOT363 package Product specification 2004 Mar 23 Philips Semiconductors Product specification Low capacitance 5-fold ESD protection
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MBD128
OT363
OT363
SCA76
R76/01/pp11
PESDXL5UY
sot363 marking K4
MAR233
philips diode arrays
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PDF
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6.5kV IGBT
Abstract: 6.5kV IGBT loss igbt 6.5kv igbt3 igbt2 infineon L280N A-9500 igbt2 infineon infineon igbt3 ohm HIGH VOLTAGE DIODE 3.3kv 3.3kv diode
Text: 6.5kV IGBT and FWD with Trench and VLD Technology for reduced Losses and high dynamic Ruggedness 1 2) 2) 3) 3) Thomas Duetemeyer , Josef-Georg Bauer , Elmar Falck , Carsten Schaeffer , G. Schmidt , 1) Burkhard Stemmer , 1 Infineon Technologies AG, Max-Planck-Straße 5, D-59581 Warstein Germany
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D-59581
D-85579
6.5kV IGBT
6.5kV IGBT loss
igbt 6.5kv
igbt3 igbt2 infineon
L280N
A-9500
igbt2 infineon
infineon igbt3 ohm
HIGH VOLTAGE DIODE 3.3kv
3.3kv diode
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M3D08
Abstract: PESD12V2S2UT PESD15V2S2UT marking code diode u4 marking code u1
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D08 PESDxS2UT series Double ESD protection diode Product specification 2003 May 15 Philips Semiconductors Product specification Double ESD protection diode PESDxS2UT series FEATURES DESCRIPTION • Uni-directional ESD protection of 2-lines or bi-directional
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M3D08
RS232
PESD12V2S2UT
PESD15V2S2UT
PESD24V2S2UT
SCA75
613514/01/pp8
M3D08
marking code diode u4
marking code u1
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076E03
Abstract: MARKING SO8
Text: DISCRETE SEMICONDUCTORS DATA SHEET PESD5V0L7BS Low capacitance 7-fold bi-directional ESD protection diode array in SO8 package Product specification 2004 Mar 15 Philips Semiconductors Product specification Low capacitance 7-fold bi-directional ESD protection diode array in SO8 package
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SCA76
R76/01/pp10
076E03
MARKING SO8
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automatic change over switch circuit diagram
Abstract: RELECO c3 a30 fx 24 v dc RELECO C3-A30 FX 24 VDC RELECO C4-A40 C3-A30, RELECO C5-A30, RELECO C2-A20, RELECO C9-A41, RELECO IEC 947 EN60947 RELECO C4-A40 DX
Text: Benefits of the new Five colours for an easier identification of coil voltage AC red: 230 Vac North America 120 Vac dark red: others Vac system Push-to-Test-Pull-to-Lock button (PTPL) grey: Vac/dc DC C dark blue: others Vdc Coil voltage marked on the top face of the relay
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IP4056
Abstract: SIMCARD Schematic Hdmi to micro usb wiring diagram ip4065cx11 SD-Card MMC IP4826CX12 IP4056CX8 IP4058CX8 IP5002CX8 back2back diode
Text: Integrated Discretes Interface conditioning and interface protection in mobile appliances Rev. 8.1 — 9 March 2011 Brochure Document information Info Content Keywords Integrated Discretes, EMI filter, ESD protection, chip scale package CSP , level shifting, memory card, SD memory card, MMC, T-flash,
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VBUS051BD-HD1
Abstract: LLP1006-2L VBUS051BD esdprotection
Text: VBUS051BD-HD1 Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • • • • 1 2 20856 20855 MARKING example only • XY • • • 21121 Bar = cathode marking Y = type code (see table below) X = date code Ultra compact LLP1006-2L package
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VBUS051BD-HD1
LLP1006-2L
18-Jul-08
VBUS051BD-HD1
VBUS051BD
esdprotection
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PDF
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R7110U-40
Abstract: pdf of 741 ic telephone hybrid TPMH1239E03 E678-12M
Text: COMPACT HYBRID PHOTO-DETECTOR PRELIMINARY DATA SEPT. 2000 FEATURES with Si-Avalanche Diode Target R7110U-40 APPLICATIONS ● High Q.E. from 450 to 650 nm ● Low Excess Noise ● High Gain ● Operable in High Magnetic Fields ● Low Hysteresis ● High Energy Physics
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R7110U-40
E678-12M
SE-171-41
TPMH1239E03
R7110U-40
pdf of 741 ic
telephone hybrid
TPMH1239E03
E678-12M
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PDF
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ortec
Abstract: ic 741 DIODE E678-12M pdf of 741 ic telephone hybrid R7110U-07 TPMH1174E04 ortec 142 R7110
Text: COMPACT HYBRID PHOTO-DETECTOR with Si-Avalanche Diode Target PRELIMINARY DATA SEPT. 2000 FEATURES R7110U-07 APPLICATIONS ● Low excess noise ● High gain ● Operable in high magnetic fields ● Low hysteresis ● High energy physics ● Medical ● Other high precision measurements
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R7110U-07
E678-12M
SE-171-41
TPMH1174E04
ortec
ic 741 DIODE
E678-12M
pdf of 741 ic
telephone hybrid
R7110U-07
TPMH1174E04
ortec 142
R7110
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PDF
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BZX93
Abstract: BZX90 BY409 BYX35 BY209 BZX91 BY209 A high voltage rectifier diode 1N82S BZX90 3.3
Text: Diodes low power high voltage diodes I fiav max. Tamb = 3 5°C T oh= 50 C <mA) m A) V rwm max. <kV> Type No. Description 2.5 - B Y182 12 E.H .T. rectifiers in plastic envelopes. 2.5 - B Y 209 11.5 E .H .T. soft-recovery re ctifie r diode. 2,5 - B Y 409
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BY209
BY409
BYX35
BYX90
BYX91-90K
-120K
-150K
h--22->
crt6-25
BZX93
BZX90
BZX91
BY209 A
high voltage rectifier diode
1N82S
BZX90 3.3
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PDF
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transistor fn 1016
Abstract: No abstract text available
Text: P roduct sp e cifica tio n P h ilip s S em icon ducto rs Wide body, high isolation optocouplers CNW82/CNW83 FEATURES • Wide body DIL encapsulation, with a pin distance of 10.16 mm • Minimum creepage distance 10 mm • High current transfer ratio and low saturation voltage, making
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OCR Scan
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CNW82/CNW83
E90700
BS415
BS7002
82/CNW
bbS3T31
bb53T31
DD3S34T
transistor fn 1016
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PDF
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CNW83
Abstract: CNW82 phototransistor philips BS415 BS7002 UBB03
Text: Product specification Philips S em iconductors Wide body, high isolation optocouplers CNW82/CNW83 FEATURES • Wide body DIL encapsulation, with a pin distance of 10.16 mm • Minimum creepage distance 10 mm • High current transfer ratio and low saturation voltage, making
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OCR Scan
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CNW82/CNW83
CNW82
CNW83
OT228
CNW83.
CNW82
bbS3131
7Z2406J
phototransistor philips
BS415
BS7002
UBB03
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PDF
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234 optocoupler
Abstract: SOT230
Text: Product specification Philips Sem iconductors High-voltage optocoupier CNX62A FEATURES • High current transfer ratio and a low saturation voltage, making the devices suitable for use with TTL integrated circuits • High degree of AC and DC Insulation 3750 V (RMS and
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OCR Scan
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CNX62A
CNX62A
OT230
OT230
BS415
BS7002
234 optocoupler
SOT230
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PDF
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Transistor 2TY
Abstract: No abstract text available
Text: H11B255 D U A L IT Y T E C H N O L O G I E S CORP S7E ]> 74t.bflSl O O D M bM l 3T3 OPTOCOUPLER Optically coupled isolator consisting of an infrared emitting GaAs diode and an npn silicon photoDarlington transistor. Features • High maximum output voltage
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OCR Scan
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H11B255
74bbfl51
OT212.
74bbflSl
0DD4fl03
SA048-2
Transistor 2TY
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PDF
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CNX82A
Abstract: philips cnx82a
Text: P h ilip s S em ico n d u cto rs Product specification CNX82A/CNX83A High-voltage optocouplers FEATURES • High current transfer ratio and low saturation voltage, making the devices suitable tor use with TTL integrated circuits • High degree of A C and DC
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OCR Scan
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CNX82A/CNX83A
CNX82A
CNX83Aare
OT231
CNX83A.
E90700
philips cnx82a
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