INNER CARTON LABEL
Abstract: 1N-SS254 SEMTECH LABEL
Text: 1N-SS254 HIGH-SPEED SWITCHING DIODE Features • Ultra-high speed. • High withstand voltage. • Low leakage and high voltage. Weight approx. 0.092g Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Peak reverse voltage VRM 40 V Reverse voltage VR 35
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1N-SS254
100mA
DO-34
50kpcs
INNER CARTON LABEL
1N-SS254
SEMTECH LABEL
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SS-254
Abstract: INNER CARTON LABEL 1N-SS254
Text: 1N-SS254 HIGH-SPEED SWITCHING DIODE Features • Ultra-high speed. • High withstand voltage. • Low leakage and high voltage. Weight approx. 0.092g Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Peak reverse voltage VRM 40 V Reverse voltage VR 35
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1N-SS254
100mA
DO-34
50kpcs
SS-254
INNER CARTON LABEL
1N-SS254
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1N-SS254
Abstract: 1N 2002 diode INNER CARTON LABEL
Text: 1N-SS254 HIGH-SPEED SWITCHING DIODE Features • Ultra-high speed. • High withstand voltage. • Low leakage and high voltage. Weight approx. 0.092g Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Peak reverse voltage VRM 40 V Reverse voltage VR 35
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1N-SS254
100mA
DO-34
50kpcs
1N-SS254
1N 2002 diode
INNER CARTON LABEL
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Honey Technology
Abstract: carton box 1N-SS254 0092G SEMTECH LABEL SS-254 ss254 HONEY
Text: 1N-SS254 HIGH-SPEED SWITCHING DIODE Features • Ultra-high speed. • High withstand voltage. • Low leakage and high voltage. Weight approx. 0.092g Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Peak reverse voltage VRM 40 V Reverse voltage VR 35
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1N-SS254
100mA
DO-34
50kpcs
Honey Technology
carton box
1N-SS254
0092G
SEMTECH LABEL
SS-254
ss254
HONEY
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Untitled
Abstract: No abstract text available
Text: LL60/LL60P Schottky Barrier Diodes * “G” Lead Pb -Free Schottky Barrier Diode 30-50 mAMPERES 40-45 VOLTS Features: *Silicon Epitaxial Planner Diode *Low Reverse Current and Low Forward Voltage *Low Current Rectification and High Speed Switching *High Reliability
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LL60/LL60P
OD-80)
LL60P
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MELF DIODE color bands
Abstract: minimelf diodes color MINI-MELF Schottky melf LL60P melf Schottky mini melf diode glass mini melf diode SCHOTTKY DIODE SOD-80 Schottky melf 30 mA
Text: LL60/LL60P Schottky Barrier Diodes Schottky Barrier Diode 30-50 mAMPERES 40-45 VOLTS Features: *Silicon Epitaxial Planner Diode *Low Reverse Current and Low Forward Voltage *Low Current Rectification and High Speed Switching *High Reliability *Used in Recorder, Radio, TV, Telephone as Detectors
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LL60/LL60P
OD-80)
LL60P
MELF DIODE color bands
minimelf diodes color
MINI-MELF
Schottky melf
LL60P
melf Schottky
mini melf diode
glass mini melf diode
SCHOTTKY DIODE SOD-80
Schottky melf 30 mA
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sd diode sod-323
Abstract: B0520LWS B0530WS B0540WS
Text: B0520LWS B0530WS/B0540WS Surface Mount Schottky Barrier Diode P b Lead Pb -Free Features: SCHOTTKY DIODE 500 mAMPERS 20-40 VOLTS * Low Forward Voltage Drop * Guard Ring Construction forTransient Protection * High Conductance 1 2 Mechanical Data: * Case: SOD-323
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B0520LWS
B0530WS/B0540WS
OD-323
MIL-STD-202,
OD-323
19-May-06
19-May-06
sd diode sod-323
B0520LWS
B0530WS
B0540WS
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BAS40CGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD BAS40CGP SURFACE MOUNT SCHOTTKY DIODE VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Ultra high speed switching FEATURE * Small surface mounting type. SOT-23 * High speed. (TRR=2.5nSec Typ.) * Suitable for high packing density.
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BAS40CGP
OT-23)
200mW.
300mA.
BAS40CGP
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BAS40
Abstract: BAS40-04 BAS40-05 BAS40-06
Text: Surface Mount Schottky Diode COMCHIP www.comchip.com.tw BAS40 Thru BAS40-06 Voltage: 40 Volts Power: 200mW Features Low Turn-on Voltage Low Forward Voltage - 0.5V Max @ IF = 30 mA Very Low Capacitance - Less Than 5.0pF @ 1V For high speed switching application, circuit
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BAS40
BAS40-06
200mW
OT-23
OT-23,
BAS40-05
BAS40-04
BAS40
BAS40-06)
BAS40-04
BAS40-05
BAS40-06
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BAS40DWGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD BAS40DWGP SURFACE MOUNT SCHOTTKY DIODE ARRAY VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Ultra high speed switching FEATURE * Small surface mounting type. SC-88/SOT-363 * High speed. (TRR=2.5nSec Typ.) * Suitable for high packing density.
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BAS40DWGP
SC-88/SOT-363)
SC-88/SOT-363
200mW.
300mA.
BAS40DWGP
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CH781UGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CH781UGP SURFACE MOUNT SCHOTTKY DIODE ARRAY VOLTAGE 40 Volts CURRENT 175 mAmperes APPLICATION * Ultra high speed switching FEATURE * Small surface mounting type. SC-88/SOT-363 * High speed. (TRR=8.0nSec Typ.) * Suitable for high packing density.
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CH781UGP
SC-88/SOT-363)
SC-88/SOT-363
200mW.
CH781UGP
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sd diode sod-323
Abstract: B0520LWS B0540WS
Text: B0520LWS / B0540WS Surface Mount Schottky Barrier Diode P b Lead Pb -Free Features: SCHOTTKY DIODE 500 mAMPERS 20-40 VOLTS * Low Forward Voltage Drop * Guard Ring Construction forTransient Protection * High Conductance Mechanical Data: * Case: SOD-323 * Plastic Material –UL Recognition Flammability Classification 94V-O
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B0520LWS
B0540WS
OD-323
MIL-STD-202,
OD-323
23-Jun-09
B05itron
sd diode sod-323
B0540WS
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Untitled
Abstract: No abstract text available
Text: RHRG1540CC, RHRG1560CC November 2013 Data Sheet 30 A, 400 V - 600 V, Hyperfast Dual Diode Features Description • Max Forward Voltage, VF = 2.1 V @ TC = 25°C • Hyperfast Recovery trr = 40 ns (@ IF = 15 A) • 400 V, 600 V Reverse Voltage and High Reliability
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RHRG1540CC,
RHRG1560CC
RHRG1560CC
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1N60 diode
Abstract: diode 1n60 1N60 1N60P 1N60P, DO-35
Text: 1N60 THRU 1N60P SMALL SIGNAL SCHOTTKY DIODE Reverse Voltage - 40 to 45 Volts Forward Current - 0.03 / 0.05 Ampere FEATURES DO-35 Metal-on-silicon junction, majority carrier conduction High current capability, Low forward voltage drop ● Extremely low reverse current Ir
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1N60P
DO-35
DO-35
1N60 diode
diode 1n60
1N60
1N60P
1N60P, DO-35
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Rjh60f5
Abstract: RJH60F5DPQ r07ds0326ej
Text: Preliminary Datasheet RJH60F5DPQ-A0 600 V - 40 A - IGBT High Speed Power Switching R07DS0326EJ0200 Rev.2.00 Jul 22, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode in one package
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RJH60F5DPQ-A0
R07DS0326EJ0200
PRSS0003ZH-A
O-247A)
Rjh60f5
RJH60F5DPQ
r07ds0326ej
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40EPF
Abstract: 40EPF02 40EPF04 40EPF06
Text: 40EPF. Soft Recovery Series Vishay High Power Products Fast Soft Recovery Rectifier Diode, 40 A FEATURES/DESCRIPTION The 40EPF. fast soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop.
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40EPF.
O-247AC
18-Jul-08
40EPF
40EPF02
40EPF04
40EPF06
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CH715WGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CH715WGP SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE 40 Volts CURRENT 0.03 Ampere APPLICATION * General purpose detection * High speed switching SC-75/SOT-416 FEATURE * Small surface mounting dual element linear type. SC-75/SOT-416
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CH715WGP
SC-75/SOT-416
SC-75/SOT-416)
125oC
-25oC
CH715WGP
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CH715TAGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CH715TAGP SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE 40 Volts CURRENT 0.03 Ampere APPLICATION * General purpose detection * High speed switching SC-75/SOT-416 FEATURE * Small surface mounting dual element linear type. SC-75/SOT-416
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CH715TAGP
SC-75/SOT-416
SC-75/SOT-416)
125oC
-25oC
CH715TAGP
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Schottky diode high reverse voltage
Abstract: MARKING 3D CH715F Schottky Diode Marking sc-70
Text: CHENMKO ENTERPRISE CO.,LTD CH715F SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE 40 Volts CURRENT 0.03 Ampere APPLICATION * General purpose detection * High speed switching SC-70/SOT-323 FEATURE * Small surface mounting dual element linear type. SC-70/SOT-323
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CH715F
SC-70/SOT-323
SC-70/SOT-323)
125oC
-25oC
Schottky diode high reverse voltage
MARKING 3D
CH715F
Schottky Diode Marking sc-70
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40EPF
Abstract: 40EPF06
Text: 40EPF.PbF Soft Recovery Series Vishay High Power Products Fast Soft Recovery Rectifier Diode, 40 A FEATURES/DESCRIPTION The 40EPF.PbF fast soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop.
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40EPF.
O-247AC
2002/95/EC.
18-Jul-08
40EPF
40EPF06
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CH701UGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CH701UGP SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE 40 Volts CURRENT 200 mAmpere APPLICATION * High speed switching SC-88/SOT-363 FEATURE * Small surface mounting type. SC-88/SOT-363 * Low VF and low IR * Three diodes in parallel installation
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CH701UGP
SC-88/SOT-363
SC-88/SOT-363)
-25oC
125oC
1000m
CH701UGP
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Untitled
Abstract: No abstract text available
Text: PD -94917 IRG4IBC20UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • 2.5kV, 60s insulation voltage • 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
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IRG4IBC20UDPbF
O-220
O-22F
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IGBT IRG4IBC30UD
Abstract: IRG4IBC30UD IGBT collector voltage 5kV ir*c30ud PD917
Text: PD91753A IRG4IBC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • 2.5kV, 60s insulation voltage U • 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
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PD91753A
IRG4IBC30UD
O-220
Absol20
IGBT IRG4IBC30UD
IRG4IBC30UD
IGBT collector voltage 5kV
ir*c30ud
PD917
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transistor c 6073
Abstract: PTC6072 c 6073 PTC6073 TF PTC 6073 Darlington NPN Silicon Diode "Power Diode" Darlington 40A ic c 6073
Text: NPN Silicon Power Darlington Power Diode Module 40 Amperes • 400 Volts FEATURES • • • • • High Voltage Rating — 600 Volts Overload Short Circuit Rating Glass Passivated Die to Provide Excellent High Temperature Stability Discrete Diode Connected
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I-----1-7-10%
transistor c 6073
PTC6072
c 6073
PTC6073
TF PTC
6073
Darlington NPN Silicon Diode
"Power Diode"
Darlington 40A
ic c 6073
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