byv10-40
Abstract: No abstract text available
Text: BYV10-40 SCHOTTKY BARRIER DIODE DO - 41 PRV : 40 Volts Io : 1.0 Ampere FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency 1.00 25.4
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BYV10-40
DO-41
UL94V-O
MIL-STD-202,
byv10-40
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PDF
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Schaffner NSG 500 c
Abstract: Schaffner NSG
Text: LDP24A TRANSIENT VOLTAGE SUPRESSORS FEATURES HIGH SURGE CAPABILITY : 40 A / 40 ms exponential wave TRANSIENT VOLTAGE SUPPRESSOR DIODE ESPECIALLY DESIGNED FOR LOAD DUMP EFFECT PROTECTION COMPLIANT WITH MAIN STANDARDS SUCH AS: ISO / DTR 7637 DESCRIPTION Transient voltage suppressor diodes especially
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LDP24A
Schaffner NSG 500 c
Schaffner NSG
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PDF
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INNER CARTON LABEL
Abstract: 1N-SS254 SEMTECH LABEL
Text: 1N-SS254 HIGH-SPEED SWITCHING DIODE Features • Ultra-high speed. • High withstand voltage. • Low leakage and high voltage. Weight approx. 0.092g Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Peak reverse voltage VRM 40 V Reverse voltage VR 35
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1N-SS254
100mA
DO-34
50kpcs
INNER CARTON LABEL
1N-SS254
SEMTECH LABEL
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PDF
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SS-254
Abstract: INNER CARTON LABEL 1N-SS254
Text: 1N-SS254 HIGH-SPEED SWITCHING DIODE Features • Ultra-high speed. • High withstand voltage. • Low leakage and high voltage. Weight approx. 0.092g Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Peak reverse voltage VRM 40 V Reverse voltage VR 35
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Original
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1N-SS254
100mA
DO-34
50kpcs
SS-254
INNER CARTON LABEL
1N-SS254
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PDF
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1N-SS254
Abstract: 1N 2002 diode INNER CARTON LABEL
Text: 1N-SS254 HIGH-SPEED SWITCHING DIODE Features • Ultra-high speed. • High withstand voltage. • Low leakage and high voltage. Weight approx. 0.092g Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Peak reverse voltage VRM 40 V Reverse voltage VR 35
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Original
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1N-SS254
100mA
DO-34
50kpcs
1N-SS254
1N 2002 diode
INNER CARTON LABEL
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PDF
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Honey Technology
Abstract: carton box 1N-SS254 0092G SEMTECH LABEL SS-254 ss254 HONEY
Text: 1N-SS254 HIGH-SPEED SWITCHING DIODE Features • Ultra-high speed. • High withstand voltage. • Low leakage and high voltage. Weight approx. 0.092g Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Peak reverse voltage VRM 40 V Reverse voltage VR 35
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Original
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1N-SS254
100mA
DO-34
50kpcs
Honey Technology
carton box
1N-SS254
0092G
SEMTECH LABEL
SS-254
ss254
HONEY
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PDF
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Untitled
Abstract: No abstract text available
Text: LL60/LL60P Schottky Barrier Diodes * “G” Lead Pb -Free Schottky Barrier Diode 30-50 mAMPERES 40-45 VOLTS Features: *Silicon Epitaxial Planner Diode *Low Reverse Current and Low Forward Voltage *Low Current Rectification and High Speed Switching *High Reliability
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LL60/LL60P
OD-80)
LL60P
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PDF
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transistor c 6073
Abstract: PTC6072 c 6073 PTC6073 TF PTC 6073 Darlington NPN Silicon Diode "Power Diode" Darlington 40A ic c 6073
Text: NPN Silicon Power Darlington Power Diode Module 40 Amperes • 400 Volts FEATURES • • • • • High Voltage Rating — 600 Volts Overload Short Circuit Rating Glass Passivated Die to Provide Excellent High Temperature Stability Discrete Diode Connected
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OCR Scan
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I-----1-7-10%
transistor c 6073
PTC6072
c 6073
PTC6073
TF PTC
6073
Darlington NPN Silicon Diode
"Power Diode"
Darlington 40A
ic c 6073
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PDF
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MELF DIODE color bands
Abstract: minimelf diodes color MINI-MELF Schottky melf LL60P melf Schottky mini melf diode glass mini melf diode SCHOTTKY DIODE SOD-80 Schottky melf 30 mA
Text: LL60/LL60P Schottky Barrier Diodes Schottky Barrier Diode 30-50 mAMPERES 40-45 VOLTS Features: *Silicon Epitaxial Planner Diode *Low Reverse Current and Low Forward Voltage *Low Current Rectification and High Speed Switching *High Reliability *Used in Recorder, Radio, TV, Telephone as Detectors
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LL60/LL60P
OD-80)
LL60P
MELF DIODE color bands
minimelf diodes color
MINI-MELF
Schottky melf
LL60P
melf Schottky
mini melf diode
glass mini melf diode
SCHOTTKY DIODE SOD-80
Schottky melf 30 mA
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PDF
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sd diode sod-323
Abstract: B0520LWS B0530WS B0540WS
Text: B0520LWS B0530WS/B0540WS Surface Mount Schottky Barrier Diode P b Lead Pb -Free Features: SCHOTTKY DIODE 500 mAMPERS 20-40 VOLTS * Low Forward Voltage Drop * Guard Ring Construction forTransient Protection * High Conductance 1 2 Mechanical Data: * Case: SOD-323
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B0520LWS
B0530WS/B0540WS
OD-323
MIL-STD-202,
OD-323
19-May-06
19-May-06
sd diode sod-323
B0520LWS
B0530WS
B0540WS
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PDF
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Untitled
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD BAS40APT SURFACE MOUNT SCHOTTKY DIODE VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Ultra high speed switching FEATURE * Small surface mounting type. SOT-23 * High speed. (TRR=2.5nSec Typ.) * Suitable for high packing density.
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BAS40APT
OT-23)
200mW.
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PDF
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Untitled
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD BAS40APT SURFACE MOUNT SCHOTTKY DIODE VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Ultra high speed switching FEATURE * Small surface mounting type. SOT-23 * High speed. (TRR=2.5nSec Typ.) * Suitable for high packing density.
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BAS40APT
OT-23)
200mW.
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PDF
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BAS40PT
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD BAS40PT SURFACE MOUNT SCHOTTKY DIODE VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Ultra high speed switching FEATURE * Small surface mounting type. SOT-23 * High speed. (TRR=2.5nSec Typ.) * Suitable for high packing density.
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Original
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BAS40PT
OT-23)
200mW.
BAS40PT
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PDF
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Untitled
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD BAS40CPT SURFACE MOUNT SCHOTTKY DIODE VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Ultra high speed switching FEATURE * Small surface mounting type. SOT-23 * High speed. (TRR=2.5nSec Typ.) * Suitable for high packing density.
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BAS40CPT
OT-23)
200mW.
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PDF
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BAS40AGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD BAS40AGP SURFACE MOUNT SCHOTTKY DIODE VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Ultra high speed switching FEATURE * Small surface mounting type. SOT-23 * High speed. (TRR=2.5nSec Typ.) * Suitable for high packing density.
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BAS40AGP
OT-23)
200mW.
300mA.
BAS40AGP
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PDF
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BAS40GP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD BAS40GP SURFACE MOUNT SCHOTTKY DIODE VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Ultra high speed switching FEATURE * Small surface mounting type. SOT-23 * High speed. (TRR=2.5nSec Typ.) * Suitable for high packing density.
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Original
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BAS40GP
OT-23)
200mW.
BAS40GP
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PDF
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Untitled
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD BAS40SPT SURFACE MOUNT SCHOTTKY DIODE VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Ultra high speed switching FEATURE * Small surface mounting type. SOT-23 * High speed. (TRR=2.5nSec Typ.) * Suitable for high packing density.
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Original
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BAS40SPT
OT-23)
200mW.
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PDF
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Untitled
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD BAS40PT SURFACE MOUNT SCHOTTKY DIODE VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Ultra high speed switching FEATURE * Small surface mounting type. SOT-23 * High speed. (TRR=2.5nSec Typ.) * Suitable for high packing density.
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BAS40PT
OT-23)
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PDF
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BAS40CGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD BAS40CGP SURFACE MOUNT SCHOTTKY DIODE VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Ultra high speed switching FEATURE * Small surface mounting type. SOT-23 * High speed. (TRR=2.5nSec Typ.) * Suitable for high packing density.
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Original
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BAS40CGP
OT-23)
200mW.
300mA.
BAS40CGP
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PDF
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Untitled
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD BAS40CPT SURFACE MOUNT SCHOTTKY DIODE VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Ultra high speed switching FEATURE * Small surface mounting type. SOT-23 * High speed. (TRR=2.5nSec Typ.) * Suitable for high packing density.
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Original
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BAS40CPT
OT-23)
200mW.
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PDF
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BAS40SPT
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD BAS40SPT SURFACE MOUNT SCHOTTKY DIODE VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Ultra high speed switching FEATURE * Small surface mounting type. SOT-23 * High speed. (TRR=2.5nSec Typ.) * Suitable for high packing density.
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Original
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BAS40SPT
OT-23)
BAS40SPT
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PDF
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Untitled
Abstract: No abstract text available
Text: 2GWJ42 SCHOTTKY BARRIER DIODE D2 PRV : 40 Volts Io : 2.0 Ampere FEATURES : * * * * * * 1.00 25.4 MIN. 0.161 (4.1) 0.154 (3.9) High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency
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Original
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2GWJ42
UL94V-O
MIL-STD-202,
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PDF
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BAS40
Abstract: BAS40-04 BAS40-05 BAS40-06
Text: Surface Mount Schottky Diode COMCHIP www.comchip.com.tw BAS40 Thru BAS40-06 Voltage: 40 Volts Power: 200mW Features Low Turn-on Voltage Low Forward Voltage - 0.5V Max @ IF = 30 mA Very Low Capacitance - Less Than 5.0pF @ 1V For high speed switching application, circuit
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BAS40
BAS40-06
200mW
OT-23
OT-23,
BAS40-05
BAS40-04
BAS40
BAS40-06)
BAS40-04
BAS40-05
BAS40-06
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PDF
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BAS40VGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD BAS40VGP SURFACE MOUNT SCHOTTKY DIODE VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Ultra high speed switching FEATURE * Small surface mounting type. SOT-563 SOT-563 * High speed. (TRR=2.5nSec Typ.) * Suitable for high packing density.
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BAS40VGP
OT-563)
OT-563
150mW.
BAS40VGP
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PDF
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