Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFR93A NPN 6 GHz wideband transistor Product specification Supersedes data of September 1995 1997 Oct 29 NXP Semiconductors Product specification NPN 6 GHz wideband transistor BFR93A FEATURES DESCRIPTION • High power gain NPN wideband transistor in a plastic
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BFR93A
BFT93.
MSB003
R77/02/pp13
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TRANSISTOR ML6
Abstract: TRANSISTOR ML5 resistor MR25 philips SFR16T philips MR25 npn 2222 transistor ZO 103 MA 75 533 resistor MR25 Miniature Ceramic Plate Capacitors 2222 philips MR25 resistor
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFQ270 NPN 6 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 6 GHz wideband transistor FEATURES BFQ270 PINNING • High power gain
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BFQ270
OT172A1.
TRANSISTOR ML6
TRANSISTOR ML5
resistor MR25 philips
SFR16T
philips MR25
npn 2222 transistor
ZO 103 MA 75 533
resistor MR25
Miniature Ceramic Plate Capacitors 2222 philips
MR25 resistor
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transistor marking R2p
Abstract: SOT23 R2P BFR91A transistor datasheet MBB264 BFR91A BFR93A BFT93 MSB003 transistor BFR93A MBG246
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR93A NPN 6 GHz wideband transistor Product specification Supersedes data of September 1995 1997 Oct 29 NXP Semiconductors Product specification NPN 6 GHz wideband transistor BFR93A FEATURES DESCRIPTION • High power gain
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BFR93A
BFT93.
MSB003
R77/02/pp13
transistor marking R2p
SOT23 R2P
BFR91A transistor datasheet
MBB264
BFR91A
BFR93A
BFT93
MSB003
transistor BFR93A
MBG246
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BPT23E06
Abstract: No abstract text available
Text: BIPOLARICS, INC. Part Number BPT23E06 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET DESCRIPTION AND APPLICATIONS: FEATURES: • High Output Power 6 Watts @ 2.3 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 1.08 A t Bipolarics' BPT23E06 is a high performance silicon bipolar transistor
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BPT23E06
BPT23E06
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BPT23E06
Abstract: BPT30E06
Text: BIPOLARICS, INC. Part Number BPT30E06 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET DESCRIPTION AND APPLICATIONS: FEATURES: • High Output Power 6 Watts @ 3.0 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 1.08 A t Bipolarics' BPT30E06 is a high performance silicon bipolar transistor
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BPT30E06
BPT30E06
BPT23E06
BPT23E06
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at42085g
Abstract: at-42085g AT42085 AT4208 42085
Text: Agilent AT-42085 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Features • High Output Power: 20.5 dBm Typical P1 dB at 2.0 GHz Description Agilent’s AT-42085 is a general purpose NPN bipolar transistor that offers excellent high frequency
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AT-42085
wit010
5965-8913E
5989-2655EN
at42085g
at-42085g
AT42085
AT4208
42085
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AT-42035
Abstract: micro-x 420
Text: What mLliM HEWLETT* PACKARD Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42035 Features different functions. The 20 emitter finger interdigitated geometry • High Output Power: yields a medium sized transistor 21.0 dBm Typical PldB at 2.0 GHz
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AT-42035
easy23
AT-42035
Rn/50
micro-x 420
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common emitter amplifier
Abstract: zo 107 P 55 NFO transistor w 04 59 UHF transistor GHz AT-42070 S21E AT42070
Text: AT-42070 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-42070 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42070 is housed in a hermetic, high reliability
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AT-42070
AT-42070
5966-4845E
5989-2654EN
common emitter amplifier
zo 107
P 55 NFO
transistor w 04 59
UHF transistor GHz
S21E
AT42070
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Untitled
Abstract: No abstract text available
Text: What HEWLETTÍ mLfíM PACKARD Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42010 Features functions. The 20 emitter finger interdigitated geometry yields a • High Output Power: 12.0 dBm Typical PxdB at 2.0 GHz medium sized transistor with
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AT-42010
AT-42010
Rj/50
DD17bSfl
M4475fl4
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"Bipolar Transistor"
Abstract: TRANSISTOR 12 GHZ TRANSISTOR 80 GHZ 136.21 AT-42010 TRANSISTOR 200 GHZ UHF transistor GHz S21E
Text: AT-42010 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-42010 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42010 is housed in a hermetic, high reliability 100 mil ceramic package. The 4 micron
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AT-42010
AT-42010
5965-8910E
AV01-0022EN
"Bipolar Transistor"
TRANSISTOR 12 GHZ
TRANSISTOR 80 GHZ
136.21
TRANSISTOR 200 GHZ
UHF transistor GHz
S21E
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MBB262
Abstract: MBB255 MCD089
Text: BFR93AR NPN 6 GHz wideband transistor Rev. 01 — 30 November 2006 Product data sheet 1. Product profile 1.1 General description NPN wideband transistor in a plastic SOT23 package. PNP complement: BFT93. 1.2 Features • Very high power gain ■ Low noise figure
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BFR93AR
BFT93.
BFR93AR
771-BFR93AR215
MBB262
MBB255
MCD089
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BFR91A
Abstract: S parameters of BFR93AR GHz transistor BFR93AR BFT93 IMD2 transistor
Text: BFR93AR NPN 6 GHz wideband transistor Rev. 01 — 30 November 2006 Product data sheet 1. Product profile 1.1 General description NPN wideband transistor in a plastic SOT23 package. PNP complement: BFT93. 1.2 Features • Very high power gain ■ Low noise figure
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BFR93AR
BFT93.
30nitions
BFR93AR
BFR91A
S parameters of BFR93AR GHz transistor
BFT93
IMD2 transistor
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BPT20B06
Abstract: No abstract text available
Text: BIPOLARICS, INC Part Number BPT20B06 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • Common Base Package Configuration • High Output Power 6 W @ 2.0 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 480 m A t • High Gain GPE = 7.5 dB @ 2.0 GHz
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BPT20B06
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Untitled
Abstract: No abstract text available
Text: BIPOLARICS, INC Part Number BPT1B6 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • Common Base Package Configuration • High Output Power 6 W @ 1.0 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 960 mA t • High Gain GPE = 9.5 dB @ 1.0 GHz
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BPT10B06
Abstract: No abstract text available
Text: BIPOLARICS, INC Part Number BPT10B06 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • Common Base Package Configuration • High Output Power 6 W @ 1.0 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 600 m A t • High Gain GPE = 7.5 dB @ 1.0 GHz
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BPT10B06
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200 mil BeO package
Abstract: No abstract text available
Text: BIPOLARICS, INC Part Number BPT17B06 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • Common Base Package Configuration • High Output Power 6 W @ 1.7 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 480 m A t • High Gain GPE = 6.5 dB @ 1.7 GHz
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200 mil BeO package
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Untitled
Abstract: No abstract text available
Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise,
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NESG2101M16
NESG2101M16
PU10395EJ03V0DS
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AT-42035
Abstract: AT-42035G S21E
Text: AT-42035 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Avago’s AT-42035 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT‑42035 is housed in a cost effective surface mount 100 mil micro-X
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AT-42035
AT42035
5989-2652EN
AV02-0299EN
AT-42035G
S21E
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Untitled
Abstract: No abstract text available
Text: What HEWLETT* mLliM PACKARD Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42085 Features • High Output Power: 20.5 dBm Typical PldB at 2.0 GHz • High Gain at 1 dB Compression: 14.0dBTypicaIGldBat2.0 GHz • Low N oise Figure: 2.OdBTypicalNF0at 2.0 GHz
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AT-42085
AT-42085
Rn/50
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NESG2101M16
Abstract: NESG2101M16-T3 NESG2101M16-T3-A
Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification
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NESG2101M16
M8E0904E
NESG2101M16
NESG2101M16-T3
NESG2101M16-T3-A
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification
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NESG2101M16
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M8E0904E
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NESG2101M16
Abstract: NESG2101M16-T3
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification
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NESG2101M16
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AT-42086
Abstract: AT-42086-BLK AT-42086-TR1 S21E 42086tr1
Text: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42086 • High Output Power: 20.5 dBm Typical P1 dB at 2.0 GHz • High Gain at 1 dB Compression: 13.5 dB Typical G1 dB at 2.0 GHz • Low Noise Figure: 1.9 dB Typical NFO at 2.0 GHz • High Gain-Bandwidth
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AT-42086
AT-42086
RN/50
5965-8914E
AT-42086-BLK
AT-42086-TR1
S21E
42086tr1
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MARKING T1K
Abstract: No abstract text available
Text: NEC's NPN SiGe NESG3031M05 HIGH FREQUENCY TRANSISTOR FEATURES • LOW NOISE FIGURE AND HIGH-GAIN NF = 0.95 dB TYP, Ga = 10.0 dB TYP @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz NF = 1.1 dB TYP, Ga = 9.5 dB TYP @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz • MAXIMUM STABLE POWER GAIN:
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NESG3031M05
OT-343
NESG3031M05-A
NESG3031M05-T1-A
MARKING T1K
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