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    HIGH POWER SPDT Search Results

    HIGH POWER SPDT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    High-End-Gas-Cooker Renesas Electronics Corporation High-End Gas Cooker Reference Design Visit Renesas Electronics Corporation
    TLP5754H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5751H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5752H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation

    HIGH POWER SPDT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1ghz bjt

    Abstract: rf mems switch FMS2016 FMS2016-001 MIL-HDBK-263
    Text: FMS2016-001 FMS2016-001 High Power GaAs SPDT Switch HIGH POWER GaAs SPDT SWITCH Package: 3mmx3mm QFN Product Description Features The FMS2016-001 is a low loss, high power, linear single-pole four-throw Gallium Arsenide antenna switch designed for use in mobile handset and other high power


    Original     		PDF FMS2016-001 FMS2016-001 FMS2016-001SR FMS2016-001SB FMS2016-001SQ FMS2016-001-EB DS090608 1ghz bjt rf mems switch FMS2016 MIL-HDBK-263

    FMS2016-001

    Abstract: MIL-HDBK-263 rf mems switch using Power Handling
    Text: FMS2016-001 FMS2016-001 High Power GaAs SPDT Switch HIGH POWER GaAs SPDT SWITCH Package: 3mmx3mm QFN Product Description Features The FMS2016-001 is a low loss, high power, linear single-pole four-throw Gallium Arsenide antenna switch designed for use in mobile handset and other high power


    Original     		PDF FMS2016-001 FMS2016-001 FMS2016-001SR FMS2016-001SQ FMS2016-001-EB DS100730 MIL-HDBK-263 rf mems switch using Power Handling

    rf power amplifier 100w

    Abstract: 100W POWER AMPLIFIER
    Text: 409V-3519 - Hermetically Sealed, High Power SPDT Miniature high power hermetically sealed switch 409V-3519 from Dow-Key Microwave represents new technology to provide extremely low loss, high integrity switching of high power RF signals up to 6 GHz and 100W.


    Original     		PDF 09V-3519 09V-3519) rf power amplifier 100w 100W POWER AMPLIFIER

    TO metal package aluminum kovar

    Abstract: No abstract text available
    Text: RF Switching Solutions 409V-3519 Hermetically Sealed - High Power SPDT RF EM Switch Applications Miniature high power hermetically sealed switch 409V-3519 from Dow-Key Microwave represents new technology to provide extremely low loss, high integrity switching of high power RF signals up to 6 GHz and 100W.


    Original     		PDF 09V-3519 09V-3519) -55oC TO metal package aluminum kovar

    TO metal package aluminum kovar

    Abstract: No abstract text available
    Text: RF Switching Solutions 409V-3519 Hermetically Sealed - High Power SPDT RF EM Switch Applications Miniature high power hermetically sealed switch 409V-3519 from Dow-Key Microwave represents new technology to provide extremely low loss, high integrity switching of high power RF signals up to 6 GHz and 100W.


    Original     		PDF 09V-3519 09V-3519) -55oC TO metal package aluminum kovar

    A004R

    Abstract: ALM-40220 RO4350 diode 944 1334
    Text: ALM-40220 2.010GHz – 2.025GHz TD-SCDMA 10 Watt High Power SPDT Switch Data Sheet Description Features Avago Technologies’ ALM-40220 is a high power SPDT switch with 10W power handling capability, high linearity performance, low insertion loss and fast switching speed


    Original     		PDF ALM-40220 010GHz 025GHz ALM-40220 50ohm AV02-1868EN A004R RO4350 diode 944 1334

    FMS2014-001

    Abstract: FMS2014QFN
    Text: FMS2014-001 FMS2014-001 High Power GaAs SPDT Switch HIGH POWER GaAs SPDT SWITCH Package: 3mmx3mm QFN Product Description Features The FMS2014-001 is a low loss, high power, linear single-pole double-throw Gallium Arsenide antenna switch designed for use in mobile handset applications. The die


    Original     		PDF FMS2014-001 FMS2014-001 FMS2014-001SR FMS2014-001SB DS090608 FMS2014-001SQ FMS2014-001-EB FMS2014QFN

    FMS2014-001

    Abstract: FMS2014QFN RFmd SPDT rf mems switch
    Text: FMS2014-001 FMS2014-001 High Power GaAs SPDT Switch HIGH POWER GaAs SPDT SWITCH Package: 3mmx3mm QFN Product Description Features The FMS2014-001 is a low loss, high power, linear single-pole double-throw Gallium Arsenide antenna switch designed for use in mobile handset applications. The die


    Original     		PDF FMS2014-001 FMS2014-001 FMS2014-001SR FMS2014-001-EB DS100730 FMS2014-001SQ FMS2014QFN RFmd SPDT rf mems switch

    RF1200

    Abstract: RFmd SPDT rfmd qfn package 2x2 6-pin SPDT HIGH POWER
    Text: RFMD RF1200 Broadband High Power SPDT Switch The RF1200 is a single-pole double-throw SPDT high power switch specially designed to handle GSM power applications. The RF1200 features low insertion loss, low control voltage, high linearity and very good harmonic characteristics. It is fabricated in a


    Original     		PDF RF1200 RF1200 900MHz) RFmd SPDT rfmd qfn package 2x2 6-pin SPDT HIGH POWER

    A114 es

    Abstract: No abstract text available
    Text: FMS2014-001 FMS2014-001 High Power GaAs SPDT Switch HIGH POWER GaAs SPDT SWITCH Package: 3 mm x 3 mm QFN Product Description Features The FMS2014-001 is a low loss, high power, linear single-pole double-throw Gallium Arsenide antenna switch designed for use in mobile handset applications. The die


    Original     		PDF FMS2014-001 FMS2014-001 FMS2014-001SR FMS2014-001SQ FMS2014-001-EB DS130506 J-STD-020C, A114 es

    2Ghz operating jfet

    Abstract: CXG1006N 8 pin 4v power supply ic High Power Antenna Switch 8 pin 4v power switch ic
    Text: CXG1006N High-Frequency SPDT Antenna Switch Description The CXG1006N is a high power antenna switch MMIC. This IC is designed using the Sony's GaAs JFET process and operates at a single positive power supply. Features • Single positive power supply operation


    Original     		PDF CXG1006N CXG1006N 32dBm 34dBm SSOP-8P-L01 SSOP008-P-0044 2Ghz operating jfet 8 pin 4v power supply ic High Power Antenna Switch 8 pin 4v power switch ic

    Untitled

    Abstract: No abstract text available
    Text: RF1200 RF1200broadband high power spdt switch BROADBAND HIGH POWER SPDT SWITCH Package: QFN, 6-Pin, 2mmx2mmx0.85mm Features       Low Frequency - 2.5GHz Operation Low Insertion Loss: 0.3dB at 1GHz High Isolation: 26dB at 1GHz Low Control Voltage:


    Original     		PDF RF1200 RF1200broadband -80dBc RF1200 1900MHz DS101202

    Y parameters of rf bjt

    Abstract: RF1200 RF1200PCBA-410 high power SPDT 1ghz bjt RF HDR1X2
    Text: RF1200 RF1200broadband high power spdt switch BROADBAND HIGH POWER SPDT SWITCH Package: QFN, 6-Pin, 2mmx2mmx0.85mm Features       Low Frequency - 2.5GHz Operation Low Insertion Loss: 0.3dB at 1GHz High Isolation: 26dB at 1GHz Low Control Voltage:


    Original     		PDF RF1200 RF1200broadband -80dBc 11b/g RF1200 1900MHz DS101202 Y parameters of rf bjt RF1200PCBA-410 high power SPDT 1ghz bjt RF HDR1X2

    10PIN

    Abstract: CXG1134EN
    Text: CXG1134EN High Power SPDT Switch with Logic Control Description The CXG1134EN is a high power and high Isolation SPDT switch MMIC. This IC can be used in wireless communication systems. The CXG1134EN can be operated by one CMOS control line. The Sony GaAs


    Original     		PDF CXG1134EN CXG1134EN 900MHz, 70dBm 10-pin VSON-10P-01 10PIN

    Untitled

    Abstract: No abstract text available
    Text: CXG1134EN High Power SPDT Switch with Logic Control For the availability of this product, please contact the sales office. Description The CXG1134EN is a high power and high Isolation SPDT switch MMIC. This IC can be used in wireless communication systems. The CXG1134EN can be


    Original     		PDF CXG1134EN CXG1134EN 900MHz, 70dBm 10-pin VSON-10P-01

    ES0189

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATION PS-ES0189 REV - MODEL NO.ES0189 SPDT SWITCH = PARAMETER 1.0 High Power Input Specifications 1.1 Frequency Range 1.2 Power, Peak nominal 1.3 Power, Average (nominal)


    Original     		PDF PS-ES0189 ES0189 ES0189

    Untitled

    Abstract: No abstract text available
    Text: TGS2352 DC – 12 GHz High Power SPDT Switch Applications • High Power Switching Product Features • • • • • • • Functional Block Diagram Frequency Range: DC – 12 GHz Input Power: up to 20 W Insertion Loss: < 1 dB Isolation: -35 dB typical


    Original     		PDF TGS2352 TGS2352

    Untitled

    Abstract: No abstract text available
    Text: TGS2353 DC – 18 GHz High Power SPDT Switch Applications • High Power Switching Product Features • • • • • • • Functional Block Diagram Frequency Range: DC – 18 GHz Input Power: up to 10 W Insertion Loss: < 1.5 dB Isolation: -30 dB typical


    Original     		PDF TGS2353 TGS2353

    TGS2351

    Abstract: high power SPDT EAR99 JESD22-A114 triquint SPDT 2002
    Text: TGS2351 DC – 6 GHz High Power SPDT Switch Applications • High Power Switching Product Features • • • • • • • Functional Block Diagram Frequency Range: DC – 6 GHz Power Handling: up to 40 W Insertion Loss: < 0.8 dB Isolation: -40 dB typical


    Original     		PDF TGS2351 TGS2351 high power SPDT EAR99 JESD22-A114 triquint SPDT 2002

    EAR99

    Abstract: JESD22-A114 high power SPDT TGS2353
    Text: TGS2353 DC – 18 GHz High Power SPDT Switch Applications • High Power Switching Product Features • • • • • • • Functional Block Diagram Frequency Range: DC – 18 GHz Input Power: up to 10 W Insertion Loss: < 1.5 dB Isolation: -30 dB typical


    Original     		PDF TGS2353 TGS2353 EAR99 JESD22-A114 high power SPDT

    Untitled

    Abstract: No abstract text available
    Text: SONY CXG1006N High-Frequency SPDT Antenna Switch Description The CXG1006N is a high power antenna switch MMiC. This !C is designed using the Sony's GaAs JFET process and operates at a single positive power supply. Features • Single positive power supply operation


    OCR Scan     		PDF CXG1006N CXG1006N 32dBm 34dBm CXQ1006N SSOP00ft. A3A2363

    Untitled

    Abstract: No abstract text available
    Text: >ONY I_ CXG1006N High-Frequency SPDT Antenna Switch Description The CXG1006N is a high power antenna switch MMIC. This IC is designed using the Sony's GaAs JFET process and operates at a single positive power supply. Features • Single positive power supply operation


    OCR Scan     		PDF CXG1006N CXG1006N 32dBm 34dBm SSOP-8P-L01 SSOP008-P-0044

    Untitled

    Abstract: No abstract text available
    Text: SONY CXG1016N High-Frequency SPDT Antenna Switch Description The CXG1016N is a high power antenna switch MMIC. This IC is designed using the Sony’s GaAs J-FET process and operates at a single positive power supply Features • Single positive power supply operation


    OCR Scan     		PDF CXG1016N CXG1016N SSOP-8P-L01 SSOP008-P-0044

    hc84

    Abstract: HC-89 HC86 HC-54 HC-69 kdi switch HC-96
    Text: MEDIUM/HIGH POWER CW SPOT SWITCH ES SERIES HC REFLECTIVE GENERAL INFORMATION: KDI/Triangle Electronics SPDT RF switches, Series HC, ^mploy carefully selected high power diodes that are soldered to the metal housing, assur­ ing excellent electrical performance and CW power handling capability.


    OCR Scan     		PDF 100mA hc84 HC-89 HC86 HC-54 HC-69 kdi switch HC-96