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    HIGH POWER PNP TRANSISTORS Search Results

    HIGH POWER PNP TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    HIGH POWER PNP TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PNP Transistors

    Abstract: No abstract text available
    Text: 40362L High Voltage Silicon High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type 40362L VCEV hFE 35 IC Notes VCEO 70 hFE A .05 COB Polarity PNP ICEV Power Dissipation


    Original     		PDF 40362L 40362L O-205AD/TO-39 07-Sep-2010 PNP Transistors

    40394

    Abstract: PNP Transistors MD14
    Text: 40394 High Voltage Silicon High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type 40394 VCEV 60 hFE 15 IC .15 Notes VCEO 40 hFE A .001 COB Polarity PNP ICEV Power Dissipation


    Original     		PDF 07-Sep-2010 40394 PNP Transistors MD14

    NTE30

    Abstract: NTE29
    Text: NTE29 NPN & NTE30 (PNP) Silicon Complementary Transistors High Power, High Current Switch Description: The NTE29 (NPN) and NTE30 (PNP) are compelmentary power transistors in a TO3 type case designed for use in high power amplifier and switching circuit applications.


    Original     		PDF NTE29 NTE30 NTE30 NTE29

    NTE29

    Abstract: NTE30 0584C
    Text: NTE29 NPN & NTE30 (PNP) Silicon Complementary Transistors High Power, High Current Switch Description: The NTE29 (NPN) and NTE30 (PNP) are compelmentary power transistors in a TO3 type case designed for use in high power amplifier and switching circuit applications.


    Original     		PDF NTE29 NTE30 NTE29 NTE30 0584C

    2N6211

    Abstract: mospec s16c40c mospec HIGH-VOLTAGE OPERATIONAL AMPLIFIER 2N6212 mospec diode Mospec Semiconductor transistor b 1560 2N6213 TRANSISTOR 1385
    Text: A MOSPEC MEDIUM-POWER HIGH VOLTAGE PNP POWER TRANSISTORS PNP 2N6211 2N6212 2N6213 Designed for high-speed switching and linear amplifier application for high-voltage operational amplifier,switching regulators,converters,inverters,deflection stages and hig


    Original     		PDF 2N6211 2N6212 2N6213 25-350V 200mA 2N6211 mospec s16c40c mospec HIGH-VOLTAGE OPERATIONAL AMPLIFIER 2N6212 mospec diode Mospec Semiconductor transistor b 1560 2N6213 TRANSISTOR 1385

    MJ15025

    Abstract: No abstract text available
    Text: MJ15023 PNP , MJ15025 (PNP) Silicon Power Transistors The MJ15023 and MJ15025 are power transistors designed for high power audio, disk head positioners and other linear applications. http://onsemi.com Features • • • • High Safe Operating Area High DC Current Gain


    Original     		PDF MJ15023 MJ15025 MJ15023 MJ15025 MJ15022 MJ15024

    ADC 808

    Abstract: BD808 power transistor audio amplifier 500 watts BD810 BD807 4422 datasheet 890 f 562 ic pdf datasheet mst 720 bd 808 BD 266 S
    Text: BD808 BD810 * Plastic High Power Silicon PNP Transistor *ON Semiconductor Preferred Device . . . designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. 10 AMPERE POWER TRANSISTORS PNP SILICON 60, 80 VOLTS 90 WATTS


    Original     		PDF BD808/D r14525 ADC 808 BD808 power transistor audio amplifier 500 watts BD810 BD807 4422 datasheet 890 f 562 ic pdf datasheet mst 720 bd 808 BD 266 S

    2N5037

    Abstract: 2SC1903 2SC2159 mje15033 replacement bd7782 MJE2050 SDT7605 2SA835 BD279 svt6251
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD808 BD810* Plastic High Power Silicon PNP Transistor *Motorola Preferred Device 10 AMPERE POWER TRANSISTORS PNP SILICON 60, 80 VOLTS 90 WATTS . . . designed for use in high power audio amplifiers utilizing complementary or quasi


    Original     		PDF BD808 BD810* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N5037 2SC1903 2SC2159 mje15033 replacement bd7782 MJE2050 SDT7605 2SA835 BD279 svt6251

    40348

    Abstract: No abstract text available
    Text: 40348 High Voltage Silicon High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type 40348 VCEV 90 hFE 30 IC .30 Notes VCEO 65 hFE A .30 COB Polarity NPN ICEV Power Dissipation


    Original     		PDF O-205AD/TO-39 07-Sep-2010 40348

    PNP Transistors

    Abstract: TO-205AD 40349
    Text: 40349 High Voltage Silicon High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type 40349 VCEV 160 hFE 30 IC .15 Notes VCEO 140 hFE A .15 COB Polarity NPN ICEV Power Dissipation


    Original     		PDF O-205AD/TO-39 07-Sep-2010 PNP Transistors TO-205AD 40349

    Untitled

    Abstract: No abstract text available
    Text: HIGH POWER SILICON PNP/NPN TRANSISTORS 2N5875 PNP 2N5877 (NPN) • High Power, Low VCE(Sat). • Hermetic TO3 (TO-204AA) Metal Package. • Ideally Suited For Power Amplifier And Switching Applications. • Screening Options Available. ABSOLUTE MAXIMUM RATINGS


    Original     		PDF 2N5875 2N5877 O-204AA)

    2n5878

    Abstract: 2N5876
    Text: HIGH POWER SILICON PNP/NPN TRANSISTORS 2N5876 PNP 2N5878 (NPN) • High Power, Low VCE(Sat). • Hermetic TO3 (TO-204AA) Metal Package. • Ideally Suited For Power Amplifier And Switching Applications. • Screening Options Available. ABSOLUTE MAXIMUM RATINGS


    Original     		PDF 2N5876 2N5878 O-204AA) 2N5876 2N5878

    Untitled

    Abstract: No abstract text available
    Text: HIGH POWER SILICON PNP/NPN TRANSISTORS 2N5876 PNP 2N5878 (NPN) • High Power, Low VCE(Sat). • Hermetic TO3 (TO-204AA) Metal Package. • Ideally Suited For Power Amplifier And Switching Applications. • Screening Options Available. ABSOLUTE MAXIMUM RATINGS


    Original     		PDF 2N5876 2N5878 O-204AA) 2N5876

    2N5877

    Abstract: 2N5875
    Text: HIGH POWER SILICON PNP/NPN TRANSISTORS 2N5875 PNP 2N5877 (NPN) • High Power, Low VCE(Sat). • Hermetic TO3 (TO-204AA) Metal Package. • Ideally Suited For Power Amplifier And Switching Applications. • Screening Options Available. ABSOLUTE MAXIMUM RATINGS


    Original     		PDF 2N5875 2N5877 O-204AA) 2N5875 2N5877

    MJ15025

    Abstract: No abstract text available
    Text: MJ15023 PNP , MJ15025 (PNP) Silicon Power Transistors The MJ15023 and MJ15025 are power transistors designed for high power audio, disk head positioners and other linear applications. http://onsemi.com Features • High Safe Operating Area (100% Tested) −2 A @ 80 V


    Original     		PDF MJ15023 MJ15025 MJ15023 MJ15025 MJ15023/D

    2N6211

    Abstract: 2N6212 2N6213 m6213 transistor SST 250
    Text: MEDIUM-POWER HIGH VOLTAGE PNP POWER TRANSISTORS PNP 2N6211 2N6212 2N6213 Designed for high-speed switching and linear amplifier application for high-voltage operational amplifier,switching regulators, converters, inverters, deflection stages and hig fidelity amplifiers.


    OCR Scan     		PDF 2N6211 2N6212 2N6213 2N6213 200oC Tj-150Â V-VCE-10V m6213 transistor SST 250

    2N6212

    Abstract: 2N6213 m6213 2N6211
    Text: Ü& MOS PEC MEDIUM-POWER HIGH VOLTAGE PNP POWER TRANSISTORS PNP 2N6211 2N6212 2N6213 Designed for high-speed switching and linear amplifier application for high-voltage operational amplifier,switching regulators, converters, inverters, deflection stages and hig


    OCR Scan     		PDF 25-350V 200mA 2N6211 2N6212 2N6213 2N6213 200oC Tj-150Â m6213

    transistor c 3206

    Abstract: BD808 transistor BD 139 IC CD 3207 BD807 bd810
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD808 BD810* Plastic High Power Silicon PNP TVansistor *Motorola Prwtorrtd Devfc« 10 AMPERE POWER TRANSISTORS PNP SILICON 60,80 VOLTS 90 WATTS . . . designed for use ¡n high power audio amplifiers utilizing complementary or quasi


    OCR Scan     		PDF BD808 BD810* BD810 BD810 ti3b72S4 transistor c 3206 transistor BD 139 IC CD 3207 BD807

    2SA1386

    Abstract: transistor 2sa1386 2SA1386A 2SC3519 2SC3519A transistor 2sc3519 power transistor audio amplifier 500 watts
    Text: ÆàMOSPEC HIGH-POWER PNP SILICON POWER TRANSISTORS PNP 2SA1386 2SA1386A .designed for use in general-purpose amplifier and switching application . FEATURES: * Recommend for 105W High Fidelity Audio Frequency Amplifier Output stage * Complementary to 2SC3519 & 2SC3519A


    OCR Scan     		PDF 2SC3519 2SC3519A 2SA1386 2SA1386A transistor 2sa1386 2SC3519 2SC3519A transistor 2sc3519 power transistor audio amplifier 500 watts

    2SA1216

    Abstract: 2SC2922 transistor 2SA1216 2SC292
    Text: ¿2&MOSPEC HIGH-POWER PNP SILICON POWER TRANSISTORS PNP .designed for use in general-purpose amplifier and switching application. 2SA1216 FEATURES: * Recommend for 150W High Fidelity Audio Frequency Amplifier Output stage * Complementary to 2SC2922 17 AMPERE


    OCR Scan     		PDF 2SC2922 2SA1216 2SC2922 transistor 2SA1216 2SC292

    2SA1215

    Abstract: 2SC2921 1284 pnp
    Text: MOS PEC HIGH-POWER PNP SILICON POWER TRANSISTORS PNP .designed for use in general-purpose amplifier and switching application . 2SA1215 FEATURES: * Recommend for 125W High Fidelity Audio Frequency Amplifier Output stage * Complementary to 2SC2921 15 AMPERE


    OCR Scan     		PDF 2SC2921 2SA1215 2SA1215 500mA) 2SC2921 1284 pnp

    2SA1186

    Abstract: 2SC2837 2sA1186 transistor
    Text: ¿Z&MOSPEC HIGH POWER PNP SILICON POWER TRANSISTORS PNP .designed for use in general-purpose amplifier and switching application. 2SA1186 FEATURES: * Recommend for 60 W High Fiderity Audio Frequency Amplifier Output stage * Complementary to 2SC2837 10 AMPERE


    OCR Scan     		PDF 2SC2837 2SA1186 2SC2837 2sA1186 transistor

    2SA1302

    Abstract: 3EMN 2SC3281 2SC328
    Text: ÆàMOS PEC HIGH-POWER PNP SILICON POWER TRANSISTORS PNP .designed for use in general-purpose amplifier and switching application . 2SA1302 FEATURES: * Recommend for 125W High Fidelity Audio Frequency Amplifier Output stage * Complementary to 2SC3281 15 AMPERE


    OCR Scan     		PDF 2SC3281 2SA1302 3EMN 2SC3281 2SC328

    BD810

    Abstract: bd808 transistor 808 transistor d 808 200 watts audio power amp transistors
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD808 BD810* Plastic High Power Silicon PNP Transistor "M otorola Preform i D tvlot 10 AMPERE POWER TRANSISTORS PNP SILICON 60, 80 VOLTS 90 WATTS . . . designed for use in high power audio am plifiers utilizing complementary or quasi


    OCR Scan     		PDF BD808 BD810* BD810 BD810 transistor 808 transistor d 808 200 watts audio power amp transistors