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    HIGH POWER NPN SILICON TRANSISTOR Search Results

    HIGH POWER NPN SILICON TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GC321AD7LP103KX18J Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC331AD7LQ153KX18J Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC331CD7LQ473KX19K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC343DD7LP334KX18K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC355DD7LQ224KX18K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    HIGH POWER NPN SILICON TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    PNP Transistors

    Abstract: TO-205AD 40349
    Text: 40349 High Voltage Silicon High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type 40349 VCEV 160 hFE 30 IC .15 Notes VCEO 140 hFE A .15 COB Polarity NPN ICEV Power Dissipation


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    O-205AD/TO-39 07-Sep-2010 PNP Transistors TO-205AD 40349 PDF

    40348

    Abstract: No abstract text available
    Text: 40348 High Voltage Silicon High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type 40348 VCEV 90 hFE 30 IC .30 Notes VCEO 65 hFE A .30 COB Polarity NPN ICEV Power Dissipation


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    O-205AD/TO-39 07-Sep-2010 40348 PDF

    BU108

    Abstract: 2SC1629 equivalent BDX54 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX41 SWITCHMODE Series NPN Silicon Power Transistor 15 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 120 WATTS . . . designed for high speed, high current, high power applications. • Very fast switching times:


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    BUX41 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 2SC1629 equivalent BDX54 BU326 BU100 PDF

    Untitled

    Abstract: No abstract text available
    Text: BUV21 SWITCHMODEt Series NPN Silicon Power Transistor This device is designed for high speed, high current, high power applications. Features http://onsemi.com 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS − 250 WATTS • High DC Current Gain:


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    BUV21 BUV21/D PDF

    Untitled

    Abstract: No abstract text available
    Text: BUV22 SWITCHMODEt Series NPN Silicon Power Transistor This device is designed for high speed, high current, high power applications. Features http://onsemi.com 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 250 VOLTS − 250 WATTS • High DC Current Gain:


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    BUV22 BUV22/D PDF

    Untitled

    Abstract: No abstract text available
    Text: BUV21 SWITCHMODEt Series NPN Silicon Power Transistor This device is designed for high speed, high current, high power applications. Features http://onsemi.com 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS − 250 WATTS • High DC Current Gain:


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    BUV21 BUV21/D PDF

    2SC2073

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2073 Preliminary NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION The UTC 2SC2073 is an NPN silicon power transistors, it uses UTC’s advanced technology to provide customers with high collector


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    2SC2073 2SC2073 2SC2073L- 2SC2073G-TA3-T O-220 QW-R221-021 PDF

    BUV22G

    Abstract: BUV22
    Text: BUV22 SWITCHMODEt Series NPN Silicon Power Transistor This device is designed for high speed, high current, high power applications. Features http://onsemi.com 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 250 VOLTS − 250 WATTS • High DC Current Gain:


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    BUV22 BUV22/D BUV22G BUV22 PDF

    BUV21

    Abstract: BUV21G
    Text: BUV21 SWITCHMODEt Series NPN Silicon Power Transistor This device is designed for high speed, high current, high power applications. Features http://onsemi.com 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS − 250 WATTS • High DC Current Gain:


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    BUV21 BUV21/D BUV21 BUV21G PDF

    BUV20

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BUV20/D SEMICONDUCTOR TECHNICAL DATA BUV20 SWITCHMODE Series NPN Silicon Power Transistor 50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications.


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    BUV20/D BUV20 BUV20 PDF

    BUV22

    Abstract: SILICON HIGH POWER bipolar npn TRANSISTOR 851 MOTOROLA
    Text: MOTOROLA Order this document by BUV22/D SEMICONDUCTOR TECHNICAL DATA BUV22 SWITCHMODE Series NPN Silicon Power Transistor 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 250 VOLTS 250 WATTS . . . designed for high current, high speed, high power applications.


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    BUV22/D* BUV22/D BUV22 SILICON HIGH POWER bipolar npn TRANSISTOR 851 MOTOROLA PDF

    BUV23

    Abstract: motorola transistor 0063
    Text: MOTOROLA Order this document by BUV23/D SEMICONDUCTOR TECHNICAL DATA BUV23 SWITCHMODE Series NPN Silicon Power Transistor 30 AMPERES NPN SILICON POWER METAL TRANSISTOR 325 VOLTS 250 WATTS . . . designed for high current, high speed, high power applications.


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    BUV23/D* BUV23/D BUV23 motorola transistor 0063 PDF

    BUV21

    Abstract: motorola transistor 0063 Motorola Bipolar Power Transistor Data
    Text: MOTOROLA Order this document by BUV21/D SEMICONDUCTOR TECHNICAL DATA BUV21 SWITCHMODE Series NPN Silicon Power Transistor 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications.


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    BUV21/D* BUV21/D BUV21 motorola transistor 0063 Motorola Bipolar Power Transistor Data PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BUV21/D SEMICONDUCTOR TECHNICAL DATA BUV21 SWITCHMODE Series NPN Silicon Power Transistor 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications.


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    BUV21/D BUV21 PDF

    197A-05

    Abstract: BUV20
    Text: MOTOROLA Order this document by BUV20/D SEMICONDUCTOR TECHNICAL DATA BUV20 SWITCHMODE Series NPN Silicon Power Transistor 50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications.


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    BUV20/D* BUV20/D 197A-05 BUV20 PDF

    BUV11

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BUV11/D SEMICONDUCTOR TECHNICAL DATA BUV11 SWITCHMODE Series NPN Silicon Power Transistor 20 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 150 WATTS . . . designed for high current, high speed, high power applications.


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    BUV11/D* BUV11/D BUV11 PDF

    MJEC340

    Abstract: No abstract text available
    Text: MJEC340 CHIP MEDIUM POWER NPN 0.5 AMPERE SILICON TRANSISTOR POWER TRANSISTOR NPN SILICON 300 VOLTS .useful for high-voltage general purpose applications. - Suitable for Transformerless, Line-Operated Equipment - Thermopad Construction Provides High Power Dissipation Rating


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    MJEC340 PDF

    Untitled

    Abstract: No abstract text available
    Text: MJEC340 CHIP MEDIUM POWER NPN 0.5 AMPERE SILICON TRANSISTOR POWER TRANSISTOR NPN SILICON 300 VOLTS .useful for high-voltage general purpose applications. - Suitable for Transformerless, Line-Operated Equipment - Thermopad Construction Provides High Power Dissipation Rating


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    MJEC340 3kA/10kA/10kA PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by BUV22/D SEMICONDUCTOR TECHNICAL DATA BUV22 SWITCHMODE Series NPN Silicon Power Transistor 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 250 VOLTS 250 WATTS . . . designed for high current, high speed, high power applications.


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    BUV22/D BUV22 PDF

    DTS-411

    Abstract: DTS411 PNP Transistors
    Text: DTS411 High Voltage Silicon High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type DTS411 VCEV 300 hFE 30 IC 1.0 Notes VCEO 300 hFE A 1.0 COB Polarity NPN ICEV 300


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    DTS411 DTS411 O-204AA/TO-3 07-Sep-2010 DTS-411 PNP Transistors PDF

    transistor 2n222

    Abstract: MJE13002 equivalent mje13003 equivalent 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND MJE13002D MJE13002 MJE13003 1N4933 2N2905 MJE210
    Text: ON Semiconductort MJE13002 * MJE13003 * SWITCHMODEt Series NPN Silicon Power Transistors *ON Semiconductor Preferred Device 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40 WATTS These devices are designed for high–voltage, high–speed power


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    MJE13002 MJE13003 r14525 MJE13002/D transistor 2n222 MJE13002 equivalent mje13003 equivalent 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND MJE13002D MJE13002 MJE13003 1N4933 2N2905 MJE210 PDF

    Untitled

    Abstract: No abstract text available
    Text: Central" CJD13003 Semiconductor Corp. NPN SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD13003 type is an NPN Silicon Power Transistors manufactured in a surface mount package designed for high voltage, high speed power switching inductive applications.


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    CJD13003 CJD13003 PDF

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort SWITCHMODEt Series NPN Silicon Power Transistor BUV21 . . . designed for high speed, high current, high power applications. 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS • High DC current gain: • • hFE min. = 20 at IC = 12 A


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    BUV21 PDF

    BU108

    Abstract: 2SC194 transistor Bc 574 2SC1419 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV20 SWITCHMODE Series NPN Silicon Power Transistor 50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min = 20 at IC = 25 A


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    BUV20 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 2SC194 transistor Bc 574 2SC1419 BU326 BU100 PDF