diode 40 S02
Abstract: No abstract text available
Text: 1N3879 R , 1N3889(R), 6/12/16FL(R) Series Vishay High Power Products Fast Recovery Diodes (Stud Version), 6/12/16 A FEATURES • Short reverse recovery time RoHS • Low stored charge COMPLIANT • Wide current range • Excellent surge capabilities • Standard JEDEC types
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1N3879
1N3889
6/12/16FL
DO-203AA
1N3879.
1N3883.
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
diode 40 S02
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Untitled
Abstract: No abstract text available
Text: VSKDL240, VSKCL240, VSKJL240, VSKEL240 Series Vishay Semiconductors Fast Recovery Diodes, 250 A MAGN-A-PAK Power Modules FEATURES • Fast recovery time characteristics • Electrically isolated base plate • Industrial standard package • Simplified mechanical designs, rapid assembly
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VSKDL240,
VSKCL240,
VSKJL240,
VSKEL240
E78996
2002/95/EC
18-Jul-08
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STTA1212D
Abstract: TRANSISTOR JC 515
Text: STTA1212D TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 12A VRRM 1200V trr (typ) 50 ns VF (max) 2.0 V K FEATURES AND BENEFITS A K ULTRA-FAST, SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION
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STTA1212D
O-220AC
STTA1212D
TRANSISTOR JC 515
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information Dual HiPerFREDTM Epitaxial Diode DSEE 55-24N1F in ISOPLUS i4-PACTM VRRM = 2400 V IF AV M = 55 A trr = 220 ns 1 3 1 3 5 5 Features Rectifier Bridge Symbol Conditions Maximum Ratings VRRM c VRRM IFAV IF(AV)M IFSM TC = 90°C; sine 180°
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55-24N1F
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ptc s6
Abstract: 1N400R
Text: ‘ 6 T Ï 5 9 5 U MI CR O SE MI 02 iE | tllS IS O CORP/POWER 0 2E 0 0 4 8 6 GGDGMflb 1 J - 2- / PTC 872 PTC 874 PTC 876 '-ui TECHNOLOGY T - 0 2 - D Î '4 Power Technology Components ¡¿is. •HIGH VOLTAGE FAST RECOVERY POWER RECTIFIERS 50 AMPERES 200-600 VOLTS •
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LG direct drive motor
Abstract: 600v 20 amp mosfet transistor tl 11C mosfet
Text: m jg m J T f 50 AMP, 600 VOLT IGBT PLUS DIODE HALF BRIDGE POWER HYBRID 4f\* a 4 1 U 1 M.S. K EN N ED Y CORP. 315 699-9201 0170 Thompson Road •Cicero, N.Y. 13039 FEATURES: 600V, 50 Amp Capability Ultra Low Thermal Resistance - Junction to Case - 0.21 °C/W
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4101B
MII-H-38534
LG direct drive motor
600v 20 amp mosfet
transistor tl
11C mosfet
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MUR15100
Abstract: No abstract text available
Text: MUR15100 Ultra Fast Recovery Diodes Dimensions TO-220AC A C A C C TAB A=Anode, C=Cathode, TAB=Cathode MUR15100 VRSM V 1000 Symbol IFRMS IFAVM IFRM IFSM Test Conditions Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15
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MUR15100
O-220AC
100oC;
MUR15100
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Untitled
Abstract: No abstract text available
Text: RHRP3060 30 A, 600 V Hyperfast Diodes Features Description • Hyperfast Recovery trr = 45 ns @ IF = 30 A The RHRP3060 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted
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RHRP3060
RHRP3060
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IXYS DSEI 2X61-12B
Abstract: "SOT-227 B" dimensions 2x61-12B ixys dsei 2x61 2X61
Text: Fast Recovery Epitaxial Diodes FRED VRSM V 1200 VRRM DSEI 2x61 IFAVM = 2x52 A VRRM = 1200 V = 40 ns trr miniBLOC, SOT-227 B Type V 1200 DSEI 2x61-12B Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular, d = 0.5
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OT-227
2x61-12B
IXYS DSEI 2X61-12B
"SOT-227 B" dimensions
2x61-12B
ixys dsei 2x61
2X61
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Untitled
Abstract: No abstract text available
Text: Fast Recovery Epitaxial Diodes FRED DSEI 2x30 lFAVM = 2x30 A DSEI 2x31 VRRM = 1000 V trr v RSM v RRM = 35 ns miniBLOC, SOT-227 B Type -N Ho V V 1 0 00 Symbol 10 00 DSEI 2x30-10B DSEI 2x31-1 OB Test Conditions O 0 DSEI 2x30 Maximum Ratings (per diode) Tc = 50° C; rectangular, d = 0.5
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OT-227
2x30-10B
2x31-1
-40Dimensions
1997IXYS
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MUR30120PT
Abstract: No abstract text available
Text: MUR30120PT Ultra Fast Recovery Diodes A C A Dimensions TO-247AD A C A C TAB A=Anode, C=Cathode, TAB=Cathode MUR30120PT VRSM V 1200 Symbol IFRMS IFAVM IFRM IFSM Test Conditions Inches Min. Max. A B 19.81 20.32 20.80 21.46 0.780 0.819 0.800 0.845 C D 15.75 16.26
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MUR30120PT
O-247AD
100oC;
MUR30120PT
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Untitled
Abstract: No abstract text available
Text: Fast Recovery Epitaxial Diodes FRED VRSM VRRM V V 640 600 DSEI 1x 31 IFAVM = 30 A VRRM = 600 V trr = 35 ns miniBLOC, SOT-227 B Type DSEI 1x 31-06C DSEI 1x 31 Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM TC = 85°C; rectangular, d = 0.5
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OT-227
31-06C
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Untitled
Abstract: No abstract text available
Text: lüIXYS 1 Fast Recovery Epitaxial Diodes FRED DSEI 2x30 ^FAVM DSEI 2x31 vrRRM 2x28 A 1200 V 40 ns t v t rsm V rrm T y p e r - r V V 1200 1 2 0 0 DSEI 2x30-12B DSEI 2x31 -12B • - -4 - 5 miniBLOC, SOT-227 B n P DSEI 2x31 DSEI 2x30 Symbol Test Conditions
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2x30-12B
OT-227
G003D11
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Untitled
Abstract: No abstract text available
Text: BYW29G-200 _ HIGH EFFICIENCY FAST RECOVERY DIODES MAIN PRODUCT CHARACTERISTICS If av 8A V rrm trr 200 V VF 0.85 V a 35 ns -N -k FEATURESAND BENEFITS • VERYSMALLCONDUCTION LOSSES ■ NEGLIGIBLE SWITCHING LOSSES ■ LOW FORWARD AND REVERSE RECOVERY
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BYW29G-200
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BYT30G-400
Abstract: No abstract text available
Text: BYT30G-400 HIGH EFFICIENCY FAST RECOVERY DIODES MAIN PRODUCT CHARACTERISTICS I f a v 30 A V rrm trr 400 V VF 1.4 V 1 & 3 —^ | —4 50 ns FEATURES AND BENEFITS • ■ ■ ■ VERY LOW REVERSE RECOVERYTIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING
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BYT30G-400
BYT30G-400
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BYW77G-200
Abstract: No abstract text available
Text: BYW77G-200 HIGH EFFICIENCY FAST RECOVERY DIODES MAIN PRODUCT CHARACTERISTICS IF AV VRRM trr VF 1&3 25 A 200 V 50 ns 0.85 V 4 4 2 FEATURES AND BENEFITS 3 1 VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD AND REVERSE RECOVERY TIME HIGH SURGE CURRENT CAPABILITY
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BYW77G-200
BYW77G-200
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1F8A
Abstract: telefunken ta 250 telefunken ta 350 6 dip smps ic
Text: Te m ic BYT08P/600A/800A TELEFUNKEN Semiconductors Fast Recovery Silicon Power Rectifier Features • Multiple diffusion • Mesa glass passivated • Low switch on power losses • Good soft recovery behaviour • Fast forward recovery time • Fast reverse recovery time
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BYT08P/600A/800A
1F8A
telefunken ta 250
telefunken ta 350
6 dip smps ic
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VBE17-12NO7
Abstract: VUE22-12NO7
Text: VBE 17-12NO7 ECO-PAC TM Single Phase Rectifier Bridge IdAV = 19 A VRRM = 1200 V trr = 40 ns with Fast Recovery Epitaxial Diodes FRED VRSM VRRM V V 1200 1200 D Typ A N VBE 17-12NO7 K Symbol Conditions IdAV ① IdAVM TC = 85°C, module 19 90 A A IFSM TVJ = 45°C
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17-12NO7
VBE17-12NO7
VUE22-12NO7
VUE22-12NO7
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05464
Abstract: 2612N 3290T
Text: VBE 26-12NO7 ECO-PAC TM Single Phase Rectifier Bridge IdAV = 32 A VRRM = 1200 V trr = 40 ns with Fast Recovery Epitaxial Diodes FRED VRSM VRRM V V 1200 1200 D Typ A N VBE 26-12NO7 K Symbol Conditions IdAV ① IdAVM TC = 85°C, module IFSM TVJ = 45°C VR = 0
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26-12NO7
26-12NO7
35-12NO7
05464
2612N
3290T
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VBE17-06NO7
Abstract: fast bridge rectifier 15QR40 fast recovery epitaxial diode Bridge
Text: VBE 17-06NO7 ECO-PAC TM Single Phase Rectifier Bridge IdAV = 27 A VRRM = 600 V trr = 35 ns with Fast Recovery Epitaxial Diodes FRED VRSM VRRM V V 600 600 D Typ A N VBE 17-06NO7 K Symbol Conditions IdAV ① IdAVM TC = 85°C, module 27 90 A A IFSM TVJ = 45°C
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17-06NO7
VBE17-06NO7/VUE22-06NO7
VBE17-06NO7
fast bridge rectifier
15QR40
fast recovery epitaxial diode Bridge
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BYT30G-400
Abstract: No abstract text available
Text: BYT30G-400 HIGH EFFICIENCY FAST RECOVERY DIODES MAIN PRODUCT CHARACTERISTICS IF AV VRRM trr VF 30 A 400 V 50 ns 1.4 V 1&3 4 4 FEATURES AND BENEFITS 2 VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING SMD PACKAGE 3 1
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BYT30G-400
BYT30G-400
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MBP2030B11
Abstract: MBP1030B11 MBP-1033-B11 MBP-1036-B11 MBP-1030 MBP1034B11 MBP-1035-B11 BP-2034-B11 MBP1035B11
Text: m e metelics MESA BEAM LEAD PIN DIODES *= •= CORPORATION FEATURES • Low Capacitance • Low Resistance • Fast Switching • Rugged Construction • Oxide and Poiyimide Passivation M AXIM U M RATINGS DESCRIPTION Total Power Dissipation 250mWat+25°C Derate Linearly to O at + 175°C
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250mWat
-65to
stren34
MBP2030B11
MBP1030B11
MBP-1033-B11
MBP-1036-B11
MBP-1030
MBP1034B11
MBP-1035-B11
BP-2034-B11
MBP1035B11
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Untitled
Abstract: No abstract text available
Text: y mumt UC1611 UC3611 UNITRODE Quad Schottky Diode Array FEATURES DESCRIPTION Matched, Four-Diode Monolithic Array This four-diode array is designed for general purpose use as individual di odes or as a high-speed, high-current bridge. It is particularly useful on
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UC1611
UC3611
UC3611
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ysi4
Abstract: No abstract text available
Text: TEMIC BYTI 15/200/400 T EL E FU N K E N Sem iconductors Ultra Fast Recovery Silicon Power Rectifier Features • M ultiple diffusion • Epitaxial - planar • Ultra fast forward recovery time • Ultra fast reverse recovery time • L ow reverse current •
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BYT115/200/400
ysi4
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