HE12FA
Abstract: diode k7
Text: HE12FA.HE12FD power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter .3 Axial lead diode High efficiency fast silicon rectifier diode HE12FA.HE12FD Forward Current: 12 A
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HE12FA.
HE12FD
HE12FD
HE12FA
diode k7
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high power diode 500v
Abstract: HUM2001 HUM2005 HUM2010 HUM2015 HUM2020 high power pin diode
Text: HUM2001/HUM2020 SERIES Pin Diode High Power Stud KEY FEATURES With high isolation, low loss, and low distortion characteristics, this Microsemi Power PIN diode is perfect for the high power switching applications where size and power handling capability are critical.
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HUM2001/HUM2020
HUM2001
high power diode 500v
HUM2005
HUM2010
HUM2015
HUM2020
high power pin diode
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HUM2001
Abstract: HUM2005 HUM2010 HUM2015 HUM2020
Text: HUM2001/HUM2020 SERIES Pin Diode High Power Stud PRODUCT PREVIEW/PRELIMINARY With high isolation, low loss, and low distortion characteristics, this Microsemi Power PIN diode is perfect for the high power switching applications where size and power handling capability are critical.
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HUM2001/HUM2020
HUM2001
HUM2005
HUM2010
HUM2015
HUM2020
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PDF
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HUM2001
Abstract: HUM2005 HUM2010 HUM2015 HUM2020
Text: HUM2001/HUM2020 SERIES Pin Diode High Power Stud PRODUCT PREVIEW/PRELIMINARY KEY FEATURES With high isolation, low loss, and low distortion characteristics, this Microsemi Power PIN diode is perfect for the high power switching applications where size and power handling capability are critical.
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HUM2001/HUM2020
HUM2001
HUM2005
HUM2010
HUM2015
HUM2020
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PDF
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Untitled
Abstract: No abstract text available
Text: BV 4, BV 6 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter -2 Axial lead diode High voltage silicon rectifier diodes BV 4, BV 6 Forward Current: 0,1 A
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Untitled
Abstract: No abstract text available
Text: 1N4154 DISCRETE POWER AND SIGNAL TECHNOLOGIES General Description: Features: The high breakdown voltage, fast switching speed and high forward conductance of this diode packaged in a DO-35 miniature Glass Axial leaded package makes it desirable also as a general purpose diode.
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1N4154
DO-35
1N4154TR
DO-35
1N4154
DO-35-2
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IN5225
Abstract: 1N4154 marking DO35 DO-35 BLUE CATHODE
Text: 1N4154 DISCRETE POWER AND SIGNAL TECHNOLOGIES General Description: Features: The high breakdown voltage, fast switching speed and high forward conductance of this diode packaged in a DO-35 miniature Glass Axial leaded package makes it desirable also as a general purpose diode.
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1N4154
DO-35
IN5225
1N4154
marking DO35
DO-35 BLUE CATHODE
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1N4154
Abstract: No abstract text available
Text: 1N4154 DISCRETE POWER AND SIGNAL TECHNOLOGIES General Description: Features: The high breakdown voltage, fast switching speed and high forward conductance of this diode packaged in a DO-35 miniature Glass Axial leaded package makes it desirable also as a general purpose diode.
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1N4154
DO-35
1N4154
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Reel Taping Specification JEDEC
Abstract: XB15A402 XB15A105 XB15A204 XB15A301 v629
Text: PIN DIODE • Applications ◆ Small Insertion Loss ◆ High Isolation ◆ High Power Handling ● High Power Antenna Switch 25W output two-way radio ■ General Description ■ Dimensions MAX 5.0 The XB15A402 PIN diode employs a high reliability glass package that is designed for solid state antenna switches used in
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XB15A402
XB15A402
DO-41
XB15A105,
XB15A204
XB15A301
XB15A105
Reel Taping Specification JEDEC
v629
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j6 diode
Abstract: bridge rectifier j6
Text: BV 8, BV 12, BV 16 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter ,3 Axial lead diode High voltage silicon rectifier diodes BV 8, BV 12, BV 16 Forward Current: 0,5 A
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bridge rectifier j7
Abstract: No abstract text available
Text: HE6SF200 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter .3 9 : 4 : : , >?15 Axial lead diode High efficiency super fast
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HE6SF200
HE6SF200
bridge rectifier j7
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12 volt zener diode
Abstract: automotive sld zener diode zener diode automotive
Text: Part: 3xSLD10U Series: SLD Series - High Power Automotive TVS Diode For Protection Against Load Dump Conditions Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current
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3xSLD10U
10x1000Â
10x160Â
12 volt zener diode
automotive sld zener diode
zener diode automotive
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C1448
Abstract: osram topled
Text: InGaAlP-High Brightness-Lumineszenzdiode 605 nm, High Optical Power InGaAlP High Brightness Light Emitting Diode (605 nm, High Optical Power) F 2001A Vorläufige Daten / Preliminary Data Wesentliche Merkmale Feature • Optimierte Lichtauskopplung durch
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Untitled
Abstract: No abstract text available
Text: Part: 3xSLD10U Series: SLD Series - High Power Automotive TVS Diode For Protection Against Load Dump Conditions Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current
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3xSLD10U
10x1000
10x1000Â
10x160Â
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C1446
Abstract: osram topled DIODE 630
Text: InGaAlP-High Brightness-Lumineszenzdiode 630 nm, High Optical Power InGaAlP High Brightness Light Emitting Diode (630 nm, High Optical Power) F 1998A Vorläufige Daten / Preliminary Data Wesentliche Merkmale Feature • Optimierte Lichtauskopplung durch
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12 volt zener diode
Abstract: SLD10U-018 automotive zener diode sld10u
Text: Part: SLD10U-018 Series: SLD Series - High Power Automotive TVS Diode For Protection Against Load Dump Conditions Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current
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SLD10U-018
10x1000Â
10x160Â
12 volt zener diode
SLD10U-018
automotive zener diode
sld10u
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automotive zener diode
Abstract: SLD24-018
Text: Part: SLD24-018 Series: SLD Series - High Power Automotive TVS Diode For Protection Against Load Dump Conditions Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current
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SLD24-018
10x1000
10x1000Â
10x160Â
automotive zener diode
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Untitled
Abstract: No abstract text available
Text: Part: SLD10U-017 Series: SLD Series - High Power Automotive TVS Diode For Protection Against Load Dump Conditions Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current
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SLD10U-017
10x1000
10x1000Â
10x160Â
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automotive sld zener diode
Abstract: No abstract text available
Text: Part: SLD10-018 Series: SLD Series - High Power Automotive TVS Diode For Protection Against Load Dump Conditions Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current
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SLD10-018
10x1000
10x1000Â
10x160Â
automotive sld zener diode
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automotive sld zener diode
Abstract: No abstract text available
Text: Part: SLD16-018 Series: SLD Series - High Power Automotive TVS Diode For Protection Against Load Dump Conditions Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current
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SLD16-018
10x1000
10x1000Â
10x160Â
automotive sld zener diode
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Untitled
Abstract: No abstract text available
Text: 2SB154040ML 2SB154040ML SCHOTTKY BARRIER DIODE CHIPS Ø 2SB154040ML is a schottky barrier diode chips Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection; Ø High ESD capability; Ø High surge capability; Ø Packaged products are widely used in switching
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2SB154040ML
2SB154040ML
2SB154040MLYY
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Untitled
Abstract: No abstract text available
Text: 2SB154060ML 2SB154060ML SCHOTTKY BARRIER DIODE CHIPS Ø 2SB154060ML is a schottky barrier diode chips Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection; Ø High ESD capability; Ø High surge capability; Ø Packaged products are widely used in switching
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2SB154060ML
2SB154060ML
2SB154060MLYY
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1M5378B
Abstract: No abstract text available
Text: SEtllTRON INDUSTRIES LTD 43E » • 613760^ 0000161 1 « S L C B IN5333-IN5388 series High Power Zener Diode Voltage Range 3V3 to 200 Volts 5.0 Watt Steady State FEATURES ■ High power regulator diode ■ High surge capabilities ■ 100% Tested ■ -65°C to +200°C
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OCR Scan
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IN5333-IN5388
DO-35
DO-41
DO-15
DO-201AD
1M5378B
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Power Diodes POWER DIODE CHARACTERISTICS Back diffused rectifier diodes A single-diffused P-N diode with a two layer structure cannot combine a high forward current density with a high reverse blocking voltage. A way out of this dilemma is provided by the three layer
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