2N5631
Abstract: high power 500 watts audio amplifier power transistor power transistor audio amplifier 500 watts 200 watt audio amplifier with ic 300 watts audio amplifier NPN 200 VOLTS POWER TRANSISTOR 1N5825 2N6031 MSD6100
Text: 2N5631 High−Voltage − High Power Transistors High−voltage − high power transistors designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage − http://onsemi.com
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2N5631
2N5631/D
2N5631
high power 500 watts audio amplifier
power transistor
power transistor audio amplifier 500 watts
200 watt audio amplifier with ic
300 watts audio amplifier
NPN 200 VOLTS POWER TRANSISTOR
1N5825
2N6031
MSD6100
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2SD1073
Abstract: No abstract text available
Text: 2SD1073 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON HIGH VOLTAGE POWER AMPLIFIER Outline Drawings TO-220AB Features High D.C. current gain Low saturation voltage High reliability Applications Audio power amplifiers Relay & solenoid drivers
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2SD1073
O-220AB
SC-46
2SD1073
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lm3875
Abstract: LM3875 Overture Audio Power Amplifier Series
Text: LM3875 LM3875 Overture Audio Power Amplifier Series High-Performance 56W Audio Power Amplifier Literature Number: SNAS083C LM3875 Overture Audio Power Amplifier Series High-Performance 56W Audio Power Amplifier General Description Features The LM3875 is a high-performance audio power amplifier
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LM3875
LM3875
SNAS083C
20kHz.
LM3875,
LM3875 Overture Audio Power Amplifier Series
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Untitled
Abstract: No abstract text available
Text: MJE4343 NPN , MJE4353 (PNP) High-Voltage - High Power Transistors . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. http://onsemi.com Features 16 AMPS POWER TRANSISTORS COMPLEMENTARY SILICON 160 VOLTS
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MJE4343
MJE4353
MJE4343
MJE4353
OT-93
MJE4343/D
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2sd1071 transistor
Abstract: 2SD1071 2sd1071 equivalent high dc current gain transistor
Text: 2SD1071 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE ULTRA HIGH β TRANSISTOR HIGH VOLTAGE POWER AMPLIFIER Outline Drawings Features TO-220AB High D.C. current gain Low saturation voltage High reliability Applications Audio power amplifiers Relay & solenoid drivers
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2SD1071
O-220AB
SC-46
2sd1071 transistor
2SD1071
2sd1071 equivalent
high dc current gain transistor
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LM3886 circuit diagram
Abstract: LM3886 lm3886 application note SNAS091B why we use heat sink compound LM3886 Overture Audio Power Amplifier Series lm3886 output circuit LM388
Text: LM3886 LM3886 Overture Audio Power Amplifier Series High-Performance 68W Audio Power Amplifier w/Mute Literature Number: SNAS091B LM3886 Overture Audio Power Amplifier Series High-Performance 68W Audio Power Amplifier w/Mute General Description The LM3886 is a high-performance audio power amplifier
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LM3886
LM3886
SNAS091B
20kHz.
LM3886,
LM3886 circuit diagram
lm3886 application note
SNAS091B
why we use heat sink compound
LM3886 Overture Audio Power Amplifier Series
lm3886 output circuit
LM388
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BU108
Abstract: 2SA1046 BDX54 BU326 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5745 See 2N4398 2N5758 High-Voltage High-Power Silicon Transistors 6 AMPERE POWER TRANSISTOR NPN SILICON 100 – 140 VOLTS 150 WATTS . . . designed for use in high power audio amplifier applications and high voltage
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2N5745
2N4398)
2N5758
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
BU108
2SA1046
BDX54
BU326
BU100
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9016 transistor
Abstract: MJE15032
Text: MJE15032 Power Transistor Features: • High power complimentary pairs. • For high quality audio output stages, and general purpose push-pull amplifier configurations. • Silicon epitaxial fabrication power transistors. • High - frequency drivers in audio amplifier.
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MJE15032
O-220
MJE150racy
9016 transistor
MJE15032
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2N5758
Abstract: motorola msd6 MSD6100 1N5825 2N4398 2N5745 2N5760
Text: MOTOROLA Order this document by 2N5758/D SEMICONDUCTOR TECHNICAL DATA 2N5745 See 2N4398 2N5758 High-Voltage High-Power Silicon Transistors 6 AMPERE POWER TRANSISTOR NPN SILICON 100 – 140 VOLTS 150 WATTS . . . designed for use in high power audio amplifier applications and high voltage
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2N5758/D*
2N5758/D
2N5758
motorola msd6
MSD6100
1N5825
2N4398
2N5745
2N5760
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340D-02
Abstract: MJE4343 MJE4353
Text: ON Semiconductort NPN MJE4343 High−Voltage Ċ High Power Transistors PNP MJE4353 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector−Emitter Sustaining Voltage — • •
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MJE4343
MJE4353
MJE4343
340D-02
340D-02
MJE4353
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1N5825
Abstract: MJE4340 MJE4343 MJE4350 MJE4353 MSD6100
Text: ON Semiconductort NPN MJE4343 High−Voltage Ċ High Power Transistors PNP MJE4353 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector−Emitter Sustaining Voltage — • •
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MJE4343
MJE4353
MJE4343
MJE4343/D
1N5825
MJE4340
MJE4350
MJE4353
MSD6100
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PDF
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort NPN MJE4343 High−Voltage Ċ High Power Transistors PNP MJE4353 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector−Emitter Sustaining Voltage — • •
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MJE4343
MJE4353
MJE4353
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1N5825
Abstract: MJE4340 MJE4343 MJE4350 MJE4353 MSD6100
Text: ON Semiconductort NPN MJE4343 High−Voltage Ċ High Power Transistors PNP MJE4353 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector−Emitter Sustaining Voltage — • •
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MJE4343
MJE4353
MJE4343
MJE4343/D
1N5825
MJE4340
MJE4350
MJE4353
MSD6100
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2N5631
Abstract: 2n6031 2N5629 2n6030 2n5630
Text: ON Semiconductort NPN High-Voltage Ċ High Power Transistors 2N5630 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. PNP 2N5631 2N6030 • High Collector Emitter Sustaining Voltage — • •
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2N5630
2N5631
2N6030
2N6031
2N5630,
2N6030
2N5631,
2N6031
2N5629
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2N5631 equivalent
Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —
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2N5630,
2N6030
2N5631,
2N6031
2N5630
2N5631
2N5631 equivalent
2N5630 "cross-reference"
Chomerics
BU108
2SA1046
tip122 tip127 audio amp
BU326
BU100
2sd313 equivalent
NPN/TIP42C as regulator
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2N6031
Abstract: 2N5631 1N5825 MSD6100 TF WIRE
Text: ON Semiconductort NPN High-Voltage - High Power Transistors 2N5631 PNP 2N6031 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage – • • 16 AMPERE
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2N5631
2N6031
r14525
2N5631/D
2N6031
2N5631
1N5825
MSD6100
TF WIRE
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WM8960
Abstract: Stereo phone plug portable stereo speaker mobile device portable stereo speaker EH11 active portable speakers
Text: WFN191_WM8960_aw*.qxp 2/1/06 11:43 AM Page 1 WM8960 Stereo CODEC with 1W Stereo Class D Speaker Driver High power, high fidelity speaker audio at low power consumption The WM8960 is a low power, high quality stereo audio CODEC with high efficiency 1W Class D
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WFN191
WM8960
WM8960
PO-FL-8960-02/06
Stereo phone plug
portable stereo speaker mobile device
portable stereo speaker
EH11
active portable speakers
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LM391N 90
Abstract: texas instruments tip41 Vbe multiplier LM391N-100 W47B LM391N equivalent lm391n amplifier IC LM391 schematic diagram 800 watt power amplifier free d LM391
Text: LM391 LM391 Audio Power Driver Literature Number: SNVS753A LM391 Audio Power Driver General Description Features The LM391 audio power driver is designed to drive external power transistors in 10 to 100 watt power amplifier designs High power supply voltage operation and true high fidelity
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LM391
LM391
SNVS753A
LM391N 90
texas instruments tip41
Vbe multiplier
LM391N-100
W47B
LM391N equivalent
lm391n amplifier
IC LM391
schematic diagram 800 watt power amplifier free d
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1N5825
Abstract: MJE4340 MJE4343 MJE4350 MJE4353 MSD6100
Text: ON Semiconductort NPN MJE4343 High-Voltage Ċ High Power Transistors PNP MJE4353 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector–Emitter Sustaining Voltage — • • 16 AMPERE
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MJE4343
MJE4353
MJE4343
r14525
MJE4343/D
1N5825
MJE4340
MJE4350
MJE4353
MSD6100
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1N5825
Abstract: MJE4340 MJE4343 MJE4350 MJE4353 MSD6100
Text: ON Semiconductort NPN MJE4343 High-Voltage Ċ High Power Transistors PNP MJE4353 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector–Emitter Sustaining Voltage — • • 16 AMPERE
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MJE4343
MJE4353
MJE4343
r14525
MJE4343/D
1N5825
MJE4340
MJE4350
MJE4353
MSD6100
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PDF
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2n6031
Abstract: 2n5631
Text: ON Semiconductort NPN High−Voltage − High Power Transistors 2N5631 PNP 2N6031 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage − • • 16 AMPERE
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2N5631
2N6031
2n6031
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2N6031
Abstract: 1N5825 2N5631 MSD6100
Text: ON Semiconductort NPN High−Voltage − High Power Transistors 2N5631 PNP 2N6031 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage − • • w 16 AMPERE
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2N5631
2N6031
2N5631/D
2N6031
1N5825
2N5631
MSD6100
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2SA877
Abstract: 2SA878
Text: AOK AOK Semiconductor Product Specification 2SA877 2SA878 S ilicon PNP Power Transistors DESCRIPTION • With TO-3 package • High power dissipation APPLICATIONS • Power amplifier applications • Recommended for high-power high-fidelity audio frequency amplifier output stage
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2SA877
2SA878
2SA878
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mj15024
Abstract: MJ15022 15024 MJ-15022 transistor MJ15024 pec 928
Text: ÆàMOS PEC SILICON POWER TRANSISTORS NPN MJ15022 MJ15024 The MJ15022 and MJ15024 are power base power transistors designed for high power audio,disk head positioners and other linear applications. FEATURES * High Safe Operating Area * High DC Current GainhFE= 15 Min @lc= 8.0 A VCE*4 .0 V
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MJ15022
MJ15024
15024
MJ-15022
transistor MJ15024
pec 928
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