Untitled
Abstract: No abstract text available
Text: 2.4 GHz High-Power and High-Gain Power Amplifier SST12LP15A Data Sheet The SST12LP15A is a high-power and high-gain power amplifier based on the highly-reliable InGaP/GaAs HBT technology. Easily configured for high-power applications with superb power-added efficiency while operating over the 2.4-2.5
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SST12LP15A
SST12LP15A
16contact
DS75056A
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SST12CP11
Abstract: No abstract text available
Text: 2.4 GHz High-Power and High-Gain Power Amplifier SST12CP11 Data Sheet SST12CP11 is a high-power and high-gain power amplifier PA based on the highly-reliable InGaP/GaAs HBT technology.This PA can be easily configured for high-power applications with good power-added efficiency while operating over the
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SST12CP11
SST12CP11
DS75054A
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Untitled
Abstract: No abstract text available
Text: 4.9-5.9 GHz High-Linearity Power Amplifier SST11LP12 A Microchip Technology Company Data Sheet SST11LP12 is a high-power, high-gain power amplifier based on the highly-reliable InGaP/GaAs HBT technology. It is configured for high-power, high-efficiency applications with high power-added efficiency while operating over the entire
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SST11LP12
SST11LP12
16-contact
DS75047A
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HT40
Abstract: "channel estimation"
Text: 4.9-5.9 GHz High-Linearity Power Amplifier SST11LP12 A Microchip Technology Company Data Sheet SST11LP12 is a high-power, high-gain power amplifier based on the highly-reliable InGaP/GaAs HBT technology. It is configured for high-power, high-efficiency applications with high power-added efficiency while operating over the entire
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SST11LP12
SST11LP12
16-contact
DS75047A
HT40
"channel estimation"
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2N5631
Abstract: high power 500 watts audio amplifier power transistor power transistor audio amplifier 500 watts 200 watt audio amplifier with ic 300 watts audio amplifier NPN 200 VOLTS POWER TRANSISTOR 1N5825 2N6031 MSD6100
Text: 2N5631 High−Voltage − High Power Transistors High−voltage − high power transistors designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage − http://onsemi.com
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2N5631
2N5631/D
2N5631
high power 500 watts audio amplifier
power transistor
power transistor audio amplifier 500 watts
200 watt audio amplifier with ic
300 watts audio amplifier
NPN 200 VOLTS POWER TRANSISTOR
1N5825
2N6031
MSD6100
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Untitled
Abstract: No abstract text available
Text: 2N5631 High−Voltage − High Power Transistors High−voltage − high power transistors designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage − http://onsemi.com
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2N5631
2N5631/D
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Untitled
Abstract: No abstract text available
Text: RF3163 and RF3164 3x3mm CDMA Power Amplifier Modules RF Micro Devices High-power, High-efficiency Linear Power Amplifier Modules for CDMA Applications The RF3163 and RF3164 are high-power, high-efficiency linear power amplifier modules specifically designed for 3V
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RF3163
RF3164
RF3164
IS-95/CDMA
RF3163
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Untitled
Abstract: No abstract text available
Text: Not recommended for new designs. Please use SST12LP15B 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP15 A Microchip Technology Company Not Recommended for New Designs The SST12LP15 is a high-power, high-gain power amplifier based on the highlyreliable InGaP/GaAs HBT technology. Easily configured for high-power, high-efficiency applications with superb power-added efficiency, it typically provides 35 dB
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SST12LP15B
SST12LP15
SST12LP15
16-contact
DS75030A
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16-vqfn-3x3-QVC-2
Abstract: SST12LP15B microchip at 2.45 GHz gp1215
Text: Not recommended for new designs. Please use SST12LP15B 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP15 A Microchip Technology Company Not Recommended for New Designs The SST12LP15 is a high-power, high-gain power amplifier based on the highlyreliable InGaP/GaAs HBT technology. Easily configured for high-power, high-efficiency applications with superb power-added efficiency, it typically provides 35 dB
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SST12LP15B
SST12LP15
SST12LP15
16-contact
DS75030A
16-vqfn-3x3-QVC-2
SST12LP15B
microchip at 2.45 GHz
gp1215
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2SD1073
Abstract: No abstract text available
Text: 2SD1073 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON HIGH VOLTAGE POWER AMPLIFIER Outline Drawings TO-220AB Features High D.C. current gain Low saturation voltage High reliability Applications Audio power amplifiers Relay & solenoid drivers
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2SD1073
O-220AB
SC-46
2SD1073
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2SD1073
Abstract: No abstract text available
Text: 2SD1073 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON HIGH VOLTAGE POWER AMPLIFIER Outline Drawings TO-220AB Features High D.C. current gain Low saturation voltage High reliability Applications Audio power amplifiers Relay & solenoid drivers
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2SD1073
O-220AB
SC-46
2SD1073
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JEP95
Abstract: SST12LP07 SST12LP07-QVCE SST12LP07-QVCE-K
Text: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP07 Data Sheet SST12LP072.4 GHz High Gain High Power PA FEATURES: • • • • • • High Gain: – Typically 29 dB gain across 2.4–2.5 GHz over temperature 0°C to +85°C High linear output power:
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SST12LP07
SST12LP072
11g/b
16F-6,
S71321-02-000
JEP95
SST12LP07
SST12LP07-QVCE
SST12LP07-QVCE-K
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JEP95
Abstract: SST12LP07 SST12LP07-QVCE SST12LP07-QVCE-K
Text: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP07 Preliminary Specifications SST12LP072.4 GHz High Gain High Power PA FEATURES: • • • • • • High Gain: – Typically 29 dB gain across 2.4–2.5 GHz over temperature 0°C to +85°C High linear output power:
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SST12LP07
SST12LP072
11g/b
S71321-00-000
JEP95
SST12LP07
SST12LP07-QVCE
SST12LP07-QVCE-K
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Untitled
Abstract: No abstract text available
Text: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP07 Data Sheet SST12LP072.4 GHz High Gain High Power PA FEATURES: • • • • • • High Gain: – Typically 29 dB gain across 2.4–2.5 GHz over temperature 0°C to +85°C High linear output power:
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SST12LP07
SST12LP072
11g/b
S71321-01-000
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SST12LP14A
Abstract: SST12LP14A-QVCE JEP95 SST12LP14A-QVCE-K S7130 S71300-02-000
Text: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP14A Preliminary Specifications SST-GP1214A2.4 GHz High Gain High Power PA FEATURES: • • • • • • High Gain: – Typically 29 dB gain across 2.4~2.5 GHz over temperature 0°C to +85°C High linear output power:
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SST12LP14A
SST-GP1214A2
11g/b
S71300-02-000
SST12LP14A
SST12LP14A-QVCE
JEP95
SST12LP14A-QVCE-K
S7130
S71300-02-000
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SST12LP15A
Abstract: JEP95 SST12LP15A-QVCE SST12LP15A-QVCE-K
Text: 2.4 GHz High-Power and High-Gain Power Amplifier SST12LP15A Data Sheet SST-GP1215A2.4 GHz High Gain High Power PA FEATURES: • • • • • High Gain: – Typically 32 dB gain across 2.4–2.5 GHz over temperature 0°C to +85°C High linear output power:
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SST12LP15A
SST-GP1215A2
11g/b
S71291-02-000
SST12LP15A
JEP95
SST12LP15A-QVCE
SST12LP15A-QVCE-K
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Untitled
Abstract: No abstract text available
Text: 2.4 GHz High-Power and High-Gain Power Amplifier SST12LP15A Data Sheet SST-GP1215A2.4 GHz High Gain High Power PA FEATURES: • • • • • High Gain: – Typically 32 dB gain across 2.4–2.5 GHz over temperature 0°C to +85°C High linear output power:
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SST12LP15A
SST-GP1215A2
11g/b
16F-6,
S71291-04-000
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Untitled
Abstract: No abstract text available
Text: 2.4 GHz High-Power and High-Gain Power Amplifier SST12LP15A Data Sheet SST-GP1215A2.4 GHz High Gain High Power PA FEATURES: • • • • • • High Gain: – Typically 32 dB gain across 2.4-2.5 GHz over temperature 0°C to +85°C High linear output power:
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SST12LP15A
SST-GP1215A2
11g/b
S71291-01-000
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JEP95
Abstract: SST12LP14C SST12LP14C-QVCE SST12LP14C-QVCE-K PAE1
Text: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP14C Data Sheet SST-GP1214A2.4 GHz High Gain High Power PA FEATURES: • • • • • • High Gain: – Typically 32 dB gain across 2.4~2.5 GHz over temperature 0°C to +85°C High linear output power:
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SST12LP14C
SST-GP1214A2
11b/g
16F-6,
S71353-03-000
JEP95
SST12LP14C
SST12LP14C-QVCE
SST12LP14C-QVCE-K
PAE1
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JEP95
Abstract: SST12LP15 SST12LP15-QVC SST12LP15-QVCE SST12LP15-QVC-K
Text: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP15 Data Sheet SST-GP12152.4 GHz High Gain High Power PA FEATURES: • • • • • • High Gain: – Typically 35 dB gain across 2.4~2.5 GHz over temperature 0°C to +80°C High linear output power:
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SST12LP15
SST-GP12152
11g/b
16F-6,
S71277-02-000
JEP95
SST12LP15
SST12LP15-QVC
SST12LP15-QVCE
SST12LP15-QVC-K
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Untitled
Abstract: No abstract text available
Text: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP15 Data Sheet SST-GP12152.4 GHz High Gain High Power PA FEATURES: • • • • • • High Gain: – Typically 35 dB gain across 2.4~2.5 GHz over temperature 0°C to +80°C High linear output power:
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SST12LP15
SST-GP12152
11g/b
S71277-01-000
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Untitled
Abstract: No abstract text available
Text: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP14A Data Sheet SST-GP1214A2.4 GHz High Gain High Power PA FEATURES: • • • • • • High Gain: – Typically 29 dB gain across 2.4~2.5 GHz over temperature 0°C to +85°C High linear output power:
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SST12LP14A
SST-GP1214A2
11g/b
S71300-03-000
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SST12LP15
Abstract: rf power amplifier transistor with s-parameters SST12LP15-QVC SST12LP15-QVCE SST12LP15-QVC-K
Text: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP15 Preliminary Specifications SST-GP12152.4 GHz High Gain High Power PA FEATURES: • • • • • • High Gain: – Typically 35 dB gain across 2.4~2.5 GHz over temperature 0°C to +80°C High linear output power:
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SST12LP15
SST-GP12152
11g/b
S71277-00-000
SST12LP15
rf power amplifier transistor with s-parameters
SST12LP15-QVC
SST12LP15-QVCE
SST12LP15-QVC-K
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2SD1313
Abstract: No abstract text available
Text: 2SD1313 SILICON NPN TRIPLE DIFFUSED MESA TYPE INDUSTRIAL APPLICATIONS Unit in tnm HIGH POWER AMPLIFIER APPLICATIONS. HIGH POWER SWITCHING APPLICATIONS. FEATURES : . High Power Dissipation . High Collector Current . High Speed Switching Low Saturation Voltage
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2SD1313
20/ie
20/is
2SD1313
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