Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    HIGH IP3 HIGH GAIN Search Results

    HIGH IP3 HIGH GAIN Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    High-End-Gas-Cooker Renesas Electronics Corporation High-End Gas Cooker Reference Design Visit Renesas Electronics Corporation
    RZ/A1H-High-Resolution-Embedded-GUI-Solution-Kit Renesas Electronics Corporation High Resolution Embedded GUI Solution Kit for RZ/A1H Visit Renesas Electronics Corporation
    TLP5754H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5751H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5752H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    HIGH IP3 HIGH GAIN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    H585

    Abstract: HMC585MS8G HMC585MS8GE
    Text: HMC585MS8G / 585MS8GE v01.0907 MIXERS - HIGH IP3 - SMT 9 HIGH IP3 GaAs MMIC MIXER with INTEGRATED LO AMPLIFIER, 400 - 650 MHz Typical Applications Features The HMC585MS8G / HMC585MS8GE are ideal for: High Input IP3: +33 dBm • Basestations & Repeaters Conversion Loss: 9 dB


    Original     		PDF HMC585MS8G 585MS8GE HMC585MS8GE HMC585MS8G H585

    Untitled

    Abstract: No abstract text available
    Text: HMC585MS8G / 585MS8GE v01.0907 MIXERS - HIGH IP3 - SMT 9 HIGH IP3 GaAs MMIC MIXER with INTEGRATED LO AMPLIFIER, 400 - 650 MHz Typical Applications Features The HMC585MS8G / HMC585MS8GE are ideal for: High Input IP3: +33 dBm • Basestations & Repeaters Conversion Loss: 9 dB


    Original     		PDF HMC585MS8G 585MS8GE HMC585MS8GE HMC585MS8G

    H483

    Abstract: HMC483MS8GE HMC483MS8G HMC485MS8G
    Text: HMC483MS8G / 483MS8GE v01.0710 MIXERS - HIGH IP3 - SMT 10 HIGH IP3 GaAs MMIC MIXER with INTEGRATED LO AMPLIFIER, 0.7 - 1.5 GHz Typical Applications Features The HMC483MS8G / HMC483MS8GE is ideal for: +33 dBm Input IP3 • Cellular/3G Conversion Loss: 9 dB


    Original     		PDF HMC483MS8G 483MS8GE HMC483MS8GE HMC-DK003 HMC483MS8G H483 HMC485MS8G

    h483

    Abstract: No abstract text available
    Text: HMC483MS8G / 483MS8GE v01.0710 MIXERS - HIGH IP3 - SMT 10 HIGH IP3 GaAs MMIC MIXER with INTEGRATED LO AMPLIFIER, 0.7 - 1.5 GHz Typical Applications Features The HMC483MS8G / HMC483MS8GE is ideal for: +33 dBm Input IP3 • Cellular/3G Conversion Loss: 9 dB


    Original     		PDF HMC483MS8G 483MS8GE HMC483MS8GE HMC-DK003 HMC483MS8G h483

    Untitled

    Abstract: No abstract text available
    Text: New Product Announcement! Ultra Low Noise, High IP3 Monolithic Amplifier 50Ω 0.7 to 1.6 GHz The Big Deal • • • • • CMA-162LN+ Ceramic, Hermetically Sealed, Nitrogen filled Low profile case, .045” high Ultra Low Noise Figure, 0.5 dB High Gain, High IP3


    Original     		PDF CMA-162LN+ DL1721

    TB-756

    Abstract: No abstract text available
    Text: Ultra Low Noise, High IP3 Monolithic Amplifier 50Ω CMA-162LN+ 0.7 to 1.6 GHz The Big Deal • • • • • Ceramic, Hermetically Sealed, Nitrogen filled Low profile case, .045” high Ultra Low Noise Figure, 0.5 dB High Gain, High IP3 Class 1B HBM ESD 500V


    Original     		PDF CMA-162LN+ DL1721 TB-756

    Untitled

    Abstract: No abstract text available
    Text: New Product Announcement! Ultra Low Noise, High IP3 Monolithic Amplifier 50Ω 1.5 to 2.5 GHz The Big Deal • • • • • CMA-252LN+ Ceramic, Hermetically Sealed, Nitrogen filled Low profile case, .045” high Ultra Low Noise Figure, 0.8 dB High Gain, High IP3, +30 dBm


    Original     		PDF CMA-252LN+ DL1721

    Untitled

    Abstract: No abstract text available
    Text: Flat Gain, High IP3 Monolithic Amplifier 50Ω GVA-60+ 0.01 to 5 GHz The Big Deal • Excellent Gain Flatness and Return Loss over 50-1000 MHz • High IP3 vs. DC Power consumption • Broadband High Dynamic Range without external Matching Components SOT-89 PACKAGE


    Original     		PDF GVA-60+ OT-89

    Untitled

    Abstract: No abstract text available
    Text: New Product Announcement! High IP3 Monolithic Amplifier 50Ω 0.01 to 5 GHz GVA-60+ Click here for data sheet The Big Deal • Excellent Gain Flatness and Return Loss over 50-1000 MHz • High IP3 vs. DC Power consumption • Broadband High Dynamic Range without


    Original     		PDF GVA-60+ OT-89

    Untitled

    Abstract: No abstract text available
    Text: Ultra Low Noise, High IP3 Monolithic Amplifier 50Ω CMA-252LN+ 1.5 to 2.5 GHz The Big Deal • • • • • Ceramic, Hermetically Sealed, Nitrogen filled Low profile case, .045” high Ultra Low Noise Figure, 0.8 dB High Gain, High IP3, +30 dBm Adjustable Current, 25 to 80 mA


    Original     		PDF CMA-252LN+ DL1721

    h483

    Abstract: HMC483MS8G HMC483MS8GE HMC485MS8G
    Text: HMC483MS8G / 483MS8GE v00.0805 MIXERS - HIGH IP3 - SMT 9 HIGH IP3 GaAs MMIC MIXER with INTEGRATED LO AMPLIFIER, 0.7 - 1.4 GHz Typical Applications Features The HMC483MS8G / HMC483MS8GE is ideal for: +33 dBm Input IP3 • Cellular/3G Conversion Loss: 9 dB • GSM, GPRS & EDGE


    Original     		PDF HMC483MS8G 483MS8GE HMC483MS8GE HMC-DK003 HMC483MS8G h483 HMC485MS8G

    Untitled

    Abstract: No abstract text available
    Text: MPS-081017P-02 800 to 960 MHz Amplifier High Dynamic Range Low Noise / Superior IP3 Preliminary Data Sheet Features: MP S-0 810 1 1.3 dB NF +44 dBm IP3 14.0 dB Gain 7P02 +26 dBm P1dB Single Positive Bias Leadless Surface Mount Package The MPS-081017P-02, is a low cost high linearity modular amplifier. The superior IP3


    Original     		PDF MPS-081017P-02 MPS-081017P-02, CDMA2000,

    zener diode c1

    Abstract: No abstract text available
    Text: MPS-081017P-02 800 to 960 MHz Amplifier High Dynamic Range Low Noise / Superior IP3 Preliminary Data Sheet Features: MP S-0 810 1 1.3 dB NF +44 dBm IP3 14.0 dB Gain 7P02 +26 dBm P1dB Single Positive Bias Leadless Surface Mount Package The MPS-081017P-02, is a low cost high linearity modular amplifier. The superior IP3


    Original     		PDF MPS-081017P-02 MPS-081017P-02, CDMA2000, zener diode c1

    HMC455LP3

    Abstract: No abstract text available
    Text: HMC455LP3 v01.0604 MICROWAVE CORPORATION InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz AMPLIFIERS - SMT 8 Typical Applications Features This amplifier is ideal for high linearity applications: Output IP3: +42 dBm • Multi-Carrier Systems Gain: 13 dB


    Original     		PDF HMC455LP3 HMC455LP3

    Untitled

    Abstract: No abstract text available
    Text: SGA8543Z SGA8543Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Product Description Features RFMD’s SGA8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from 50MHzto3.5GHz. The


    Original     		PDF SGA8543Z SGA8543Z 50MHzto3 SGA8543ZSQ SGA8543ZSR SGA8543Z-EVB1 DS100809

    Untitled

    Abstract: No abstract text available
    Text: HMC461LP3 v00.1202 MICROWAVE CORPORATION InGaP HBT 1 Watt High IP3 AMPLIFIER, 1.7 - 2.2 GHz AMPLIFIERS - SMT 8 Typical Applications Features A high linearity 1 watt amplifier for: +45 dBm Output IP3 Balanced Configuration • Multi-Carrier Systems 12 dB Gain


    Original     		PDF HMC461LP3 HMC461LP3 HMC455LP3

    140C

    Abstract: SGA-8543Z
    Text: SGA-8543Z High IP3, Medium Power Discrete SiGe Transistor SGA-8543Z Preliminary HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR RFMD Green, RoHS Compliant, Pb-Free Product Description Features RFMD’s SGA-8543Z is a high performance Silicon Germanium Heterostructure


    Original     		PDF SGA-8543Z SGA-8543Z 50MHzto3 EDS-102583 140C

    Untitled

    Abstract: No abstract text available
    Text: High IP3 Monolithic Amplifier 50Ω GVA-60+ 0.01 to 5 GHz The Big Deal • Excellent Gain Flatness and Return Loss over 50-1000 MHz • High IP3 vs. DC Power consumption • Broadband High Dynamic Range without external Matching Components SOT-89 PACKAGE Product Overview


    Original     		PDF GVA-60+ OT-89

    Untitled

    Abstract: No abstract text available
    Text: Flat Gain, High IP3 Monolithic Amplifier 50Ω GVA-60+ 0.01 to 5 GHz The Big Deal • Excellent Gain Flatness and Return Loss over 50-1000 MHz • High IP3 vs. DC Power consumption • Broadband High Dynamic Range without external Matching Components SOT-89 PACKAGE


    Original     		PDF GVA-60+ OT-89

    Untitled

    Abstract: No abstract text available
    Text: High IP3 Low Noise Amplifier 50Ω ZRL-700 250 to 700 MHz Features • high IP3, +46 dBm typ. • low noise figure, 2.0 dB typ. • broadband flat gain response • internal voltage regulated • over-voltage and transient protected Applications • high dynamic range applications


    Original     		PDF ZRL-700 FJ893 ZRL-700

    Untitled

    Abstract: No abstract text available
    Text: High IP3 Low Noise Amplifier 50Ω ZRL-2300 1400 to 2300 MHz Features • high IP3, +42 dBm typ. • low noise figure, 2.5 dB typ. • broadband flat gain response • internal voltage regulated • over-voltage and transient protected Applications • high dynamic range


    Original     		PDF ZRL-2300 FJ893 A1600 ZRL-2300

    Untitled

    Abstract: No abstract text available
    Text: Low Noise, High IP3 Monolithic Amplifier 50Ω CMA-545G1+ 0.4 to 2.2 GHz The Big Deal • Ceramic, Hermetically Sealed, Nitrogen filled • Low profile case, .045” high • High Gain, 31.5 dB • Low Noise Figure, 1.0 dB • High IP3, 35-37 dBm • Class 1B HBM ESD rating 500V


    Original     		PDF CMA-545G1+ DL1721

    Untitled

    Abstract: No abstract text available
    Text: Low Noise, High IP3 Monolithic Amplifier 50Ω CMA-545G1+ 0.4 to 2.2 GHz The Big Deal • Ceramic, Hermetically Sealed, Nitrogen filled • Low profile case, .045” high • High Gain, 31.5 dB • Low Noise Figure, 1.0 dB • High IP3, 35-37 dBm • Class 1B HBM ESD rating 500V


    Original     		PDF CMA-545G1+ DL1721

    SGA8543Z-EVB2

    Abstract: marking code 85Z SGA8543ZSQ gm 88 140C rfmd model marking code PHEMT marking code B Transistor code zl HEMT marking P
    Text: SGA8543Z SGA8543Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Product Description Features RFMD’s SGA8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from 50MHzto3.5GHz. The


    Original     		PDF SGA8543Z SGA8543Z 50MHzto3 SGA8543ZSQ SGA8543ZSR SGA8543Z-EVB1 DS100809 SGA8543Z-EVB2 marking code 85Z SGA8543ZSQ gm 88 140C rfmd model marking code PHEMT marking code B Transistor code zl HEMT marking P