H585
Abstract: HMC585MS8G HMC585MS8GE
Text: HMC585MS8G / 585MS8GE v01.0907 MIXERS - HIGH IP3 - SMT 9 HIGH IP3 GaAs MMIC MIXER with INTEGRATED LO AMPLIFIER, 400 - 650 MHz Typical Applications Features The HMC585MS8G / HMC585MS8GE are ideal for: High Input IP3: +33 dBm • Basestations & Repeaters Conversion Loss: 9 dB
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HMC585MS8G
585MS8GE
HMC585MS8GE
HMC585MS8G
H585
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Untitled
Abstract: No abstract text available
Text: HMC585MS8G / 585MS8GE v01.0907 MIXERS - HIGH IP3 - SMT 9 HIGH IP3 GaAs MMIC MIXER with INTEGRATED LO AMPLIFIER, 400 - 650 MHz Typical Applications Features The HMC585MS8G / HMC585MS8GE are ideal for: High Input IP3: +33 dBm • Basestations & Repeaters Conversion Loss: 9 dB
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HMC585MS8G
585MS8GE
HMC585MS8GE
HMC585MS8G
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H483
Abstract: HMC483MS8GE HMC483MS8G HMC485MS8G
Text: HMC483MS8G / 483MS8GE v01.0710 MIXERS - HIGH IP3 - SMT 10 HIGH IP3 GaAs MMIC MIXER with INTEGRATED LO AMPLIFIER, 0.7 - 1.5 GHz Typical Applications Features The HMC483MS8G / HMC483MS8GE is ideal for: +33 dBm Input IP3 • Cellular/3G Conversion Loss: 9 dB
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HMC483MS8G
483MS8GE
HMC483MS8GE
HMC-DK003
HMC483MS8G
H483
HMC485MS8G
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h483
Abstract: No abstract text available
Text: HMC483MS8G / 483MS8GE v01.0710 MIXERS - HIGH IP3 - SMT 10 HIGH IP3 GaAs MMIC MIXER with INTEGRATED LO AMPLIFIER, 0.7 - 1.5 GHz Typical Applications Features The HMC483MS8G / HMC483MS8GE is ideal for: +33 dBm Input IP3 • Cellular/3G Conversion Loss: 9 dB
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HMC483MS8G
483MS8GE
HMC483MS8GE
HMC-DK003
HMC483MS8G
h483
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Untitled
Abstract: No abstract text available
Text: New Product Announcement! Ultra Low Noise, High IP3 Monolithic Amplifier 50Ω 0.7 to 1.6 GHz The Big Deal • • • • • CMA-162LN+ Ceramic, Hermetically Sealed, Nitrogen filled Low profile case, .045” high Ultra Low Noise Figure, 0.5 dB High Gain, High IP3
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CMA-162LN+
DL1721
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TB-756
Abstract: No abstract text available
Text: Ultra Low Noise, High IP3 Monolithic Amplifier 50Ω CMA-162LN+ 0.7 to 1.6 GHz The Big Deal • • • • • Ceramic, Hermetically Sealed, Nitrogen filled Low profile case, .045” high Ultra Low Noise Figure, 0.5 dB High Gain, High IP3 Class 1B HBM ESD 500V
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CMA-162LN+
DL1721
TB-756
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Untitled
Abstract: No abstract text available
Text: New Product Announcement! Ultra Low Noise, High IP3 Monolithic Amplifier 50Ω 1.5 to 2.5 GHz The Big Deal • • • • • CMA-252LN+ Ceramic, Hermetically Sealed, Nitrogen filled Low profile case, .045” high Ultra Low Noise Figure, 0.8 dB High Gain, High IP3, +30 dBm
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CMA-252LN+
DL1721
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Untitled
Abstract: No abstract text available
Text: Flat Gain, High IP3 Monolithic Amplifier 50Ω GVA-60+ 0.01 to 5 GHz The Big Deal • Excellent Gain Flatness and Return Loss over 50-1000 MHz • High IP3 vs. DC Power consumption • Broadband High Dynamic Range without external Matching Components SOT-89 PACKAGE
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GVA-60+
OT-89
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Untitled
Abstract: No abstract text available
Text: New Product Announcement! High IP3 Monolithic Amplifier 50Ω 0.01 to 5 GHz GVA-60+ Click here for data sheet The Big Deal • Excellent Gain Flatness and Return Loss over 50-1000 MHz • High IP3 vs. DC Power consumption • Broadband High Dynamic Range without
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GVA-60+
OT-89
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Untitled
Abstract: No abstract text available
Text: Ultra Low Noise, High IP3 Monolithic Amplifier 50Ω CMA-252LN+ 1.5 to 2.5 GHz The Big Deal • • • • • Ceramic, Hermetically Sealed, Nitrogen filled Low profile case, .045” high Ultra Low Noise Figure, 0.8 dB High Gain, High IP3, +30 dBm Adjustable Current, 25 to 80 mA
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CMA-252LN+
DL1721
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h483
Abstract: HMC483MS8G HMC483MS8GE HMC485MS8G
Text: HMC483MS8G / 483MS8GE v00.0805 MIXERS - HIGH IP3 - SMT 9 HIGH IP3 GaAs MMIC MIXER with INTEGRATED LO AMPLIFIER, 0.7 - 1.4 GHz Typical Applications Features The HMC483MS8G / HMC483MS8GE is ideal for: +33 dBm Input IP3 • Cellular/3G Conversion Loss: 9 dB • GSM, GPRS & EDGE
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HMC483MS8G
483MS8GE
HMC483MS8GE
HMC-DK003
HMC483MS8G
h483
HMC485MS8G
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Untitled
Abstract: No abstract text available
Text: MPS-081017P-02 800 to 960 MHz Amplifier High Dynamic Range Low Noise / Superior IP3 Preliminary Data Sheet Features: MP S-0 810 1 1.3 dB NF +44 dBm IP3 14.0 dB Gain 7P02 +26 dBm P1dB Single Positive Bias Leadless Surface Mount Package The MPS-081017P-02, is a low cost high linearity modular amplifier. The superior IP3
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MPS-081017P-02
MPS-081017P-02,
CDMA2000,
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zener diode c1
Abstract: No abstract text available
Text: MPS-081017P-02 800 to 960 MHz Amplifier High Dynamic Range Low Noise / Superior IP3 Preliminary Data Sheet Features: MP S-0 810 1 1.3 dB NF +44 dBm IP3 14.0 dB Gain 7P02 +26 dBm P1dB Single Positive Bias Leadless Surface Mount Package The MPS-081017P-02, is a low cost high linearity modular amplifier. The superior IP3
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MPS-081017P-02
MPS-081017P-02,
CDMA2000,
zener diode c1
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HMC455LP3
Abstract: No abstract text available
Text: HMC455LP3 v01.0604 MICROWAVE CORPORATION InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz AMPLIFIERS - SMT 8 Typical Applications Features This amplifier is ideal for high linearity applications: Output IP3: +42 dBm • Multi-Carrier Systems Gain: 13 dB
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HMC455LP3
HMC455LP3
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Untitled
Abstract: No abstract text available
Text: SGA8543Z SGA8543Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Product Description Features RFMD’s SGA8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from 50MHzto3.5GHz. The
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SGA8543Z
SGA8543Z
50MHzto3
SGA8543ZSQ
SGA8543ZSR
SGA8543Z-EVB1
DS100809
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Untitled
Abstract: No abstract text available
Text: HMC461LP3 v00.1202 MICROWAVE CORPORATION InGaP HBT 1 Watt High IP3 AMPLIFIER, 1.7 - 2.2 GHz AMPLIFIERS - SMT 8 Typical Applications Features A high linearity 1 watt amplifier for: +45 dBm Output IP3 Balanced Configuration • Multi-Carrier Systems 12 dB Gain
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HMC461LP3
HMC461LP3
HMC455LP3
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140C
Abstract: SGA-8543Z
Text: SGA-8543Z High IP3, Medium Power Discrete SiGe Transistor SGA-8543Z Preliminary HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR RFMD Green, RoHS Compliant, Pb-Free Product Description Features RFMD’s SGA-8543Z is a high performance Silicon Germanium Heterostructure
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SGA-8543Z
SGA-8543Z
50MHzto3
EDS-102583
140C
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Untitled
Abstract: No abstract text available
Text: High IP3 Monolithic Amplifier 50Ω GVA-60+ 0.01 to 5 GHz The Big Deal • Excellent Gain Flatness and Return Loss over 50-1000 MHz • High IP3 vs. DC Power consumption • Broadband High Dynamic Range without external Matching Components SOT-89 PACKAGE Product Overview
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GVA-60+
OT-89
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Untitled
Abstract: No abstract text available
Text: Flat Gain, High IP3 Monolithic Amplifier 50Ω GVA-60+ 0.01 to 5 GHz The Big Deal • Excellent Gain Flatness and Return Loss over 50-1000 MHz • High IP3 vs. DC Power consumption • Broadband High Dynamic Range without external Matching Components SOT-89 PACKAGE
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OT-89
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Untitled
Abstract: No abstract text available
Text: High IP3 Low Noise Amplifier 50Ω ZRL-700 250 to 700 MHz Features • high IP3, +46 dBm typ. • low noise figure, 2.0 dB typ. • broadband flat gain response • internal voltage regulated • over-voltage and transient protected Applications • high dynamic range applications
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ZRL-700
FJ893
ZRL-700
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Untitled
Abstract: No abstract text available
Text: High IP3 Low Noise Amplifier 50Ω ZRL-2300 1400 to 2300 MHz Features • high IP3, +42 dBm typ. • low noise figure, 2.5 dB typ. • broadband flat gain response • internal voltage regulated • over-voltage and transient protected Applications • high dynamic range
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ZRL-2300
FJ893
A1600
ZRL-2300
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Untitled
Abstract: No abstract text available
Text: Low Noise, High IP3 Monolithic Amplifier 50Ω CMA-545G1+ 0.4 to 2.2 GHz The Big Deal • Ceramic, Hermetically Sealed, Nitrogen filled • Low profile case, .045” high • High Gain, 31.5 dB • Low Noise Figure, 1.0 dB • High IP3, 35-37 dBm • Class 1B HBM ESD rating 500V
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CMA-545G1+
DL1721
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Untitled
Abstract: No abstract text available
Text: Low Noise, High IP3 Monolithic Amplifier 50Ω CMA-545G1+ 0.4 to 2.2 GHz The Big Deal • Ceramic, Hermetically Sealed, Nitrogen filled • Low profile case, .045” high • High Gain, 31.5 dB • Low Noise Figure, 1.0 dB • High IP3, 35-37 dBm • Class 1B HBM ESD rating 500V
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DL1721
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SGA8543Z-EVB2
Abstract: marking code 85Z SGA8543ZSQ gm 88 140C rfmd model marking code PHEMT marking code B Transistor code zl HEMT marking P
Text: SGA8543Z SGA8543Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Product Description Features RFMD’s SGA8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from 50MHzto3.5GHz. The
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SGA8543Z
SGA8543Z
50MHzto3
SGA8543ZSQ
SGA8543ZSR
SGA8543Z-EVB1
DS100809
SGA8543Z-EVB2
marking code 85Z
SGA8543ZSQ
gm 88
140C
rfmd model marking code
PHEMT marking code B
Transistor code zl
HEMT marking P
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