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    HIGH IMPEDANCE MICROPHONE Search Results

    HIGH IMPEDANCE MICROPHONE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP5754H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5751H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5752H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    DCL542H01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=2:2) / Default Output Logic: High / Output enable Visit Toshiba Electronic Devices & Storage Corporation

    HIGH IMPEDANCE MICROPHONE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK118

    Abstract: 2SK1182 2SK1183
    Text: 2SK118 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK118 General Purpose and Impedance Converter and Condenser Microphone Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA max (VGS = −30 V)


    Original     		PDF 2SK118 2SK118 2SK1182 2SK1183

    2SK118

    Abstract: 2SK1182 2SK118+equivalent
    Text: 2SK118 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK118 General Purpose and Impedance Converter and Condenser Microphone Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA max (VGS = −30 V)


    Original     		PDF 2SK118 2SK118 2SK1182 2SK118+equivalent

    Untitled

    Abstract: No abstract text available
    Text: 2SK208 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK208 General Purpose and Impedance Converter and Condenser Microphone Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)


    Original     		PDF 2SK208

    2sk118

    Abstract: No abstract text available
    Text: 2SK118 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK118 General Purpose and Impedance Converter and Condenser Microphone Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA max (VGS = −30 V)


    Original     		PDF 2SK118 2sk118

    Untitled

    Abstract: No abstract text available
    Text: 2SK879 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)


    Original     		PDF 2SK879

    2SK118

    Abstract: No abstract text available
    Text: 2SK118 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK118 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA max (VGS = −30 V)


    Original     		PDF 2SK118 2SK118

    2SK879

    Abstract: No abstract text available
    Text: 2SK879 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V · High input impedance: IGSS = −1.0 nA max (VGS = −30 V)


    Original     		PDF 2SK879 2SK879

    Untitled

    Abstract: No abstract text available
    Text: 2SK879 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)


    Original     		PDF 2SK879

    Untitled

    Abstract: No abstract text available
    Text: 2SK208 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK208 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)


    Original     		PDF 2SK208

    condenser microphone

    Abstract: 2SK879
    Text: 2SK879 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)


    Original     		PDF 2SK879 condenser microphone 2SK879

    Untitled

    Abstract: No abstract text available
    Text: 2SK208 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK208 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)


    Original     		PDF 2SK208 O-236MOD SC-59

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet PD5758T6J R09DS0017EJ0100 Rev.1.00 Apr 18, 2011 Low Noise and High Gain Amplifier IC for Impedance Converter of Microphone DESCRIPTION The μPD5758T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret


    Original     		PDF PD5758T6J R09DS0017EJ0100 PD5758T6J

    2SK208

    Abstract: 2SK2082
    Text: 2SK208 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK208 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V · High input impedance: IGSS = −1.0 nA max (VGS = −30 V)


    Original     		PDF 2SK208 O-236MOD 2SK208 2SK2082

    2SK879

    Abstract: No abstract text available
    Text: 2SK879 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)


    Original     		PDF 2SK879 2SK879

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet PD5759T6J R09DS0018EJ0100 Rev.1.00 Apr 18, 2011 Low Noise and High Gain Amplifier IC for Impedance Converter of Microphone DESCRIPTION The μPD5759T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret


    Original     		PDF PD5759T6J R09DS0018EJ0100 PD5759T6J

    2SK118

    Abstract: 2SK1182
    Text: 2SK118 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK118 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V · High input impedance: IGSS = −1 nA max (VGS = −30 V)


    Original     		PDF 2SK118 2SK118 2SK1182

    2SK208

    Abstract: 2SK2082
    Text: 2SK208 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK208 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)


    Original     		PDF 2SK208 2SK208 2SK2082

    Untitled

    Abstract: No abstract text available
    Text: 2SK879 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)


    Original     		PDF 2SK879 SC-70

    2SK879

    Abstract: No abstract text available
    Text: 2SK879 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)


    Original     		PDF 2SK879 2SK879

    2sk2082

    Abstract: condenser microphone 2SK208
    Text: 2SK208 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK208 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)


    Original     		PDF 2SK208 O-236MOD 2sk2082 condenser microphone 2SK208

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS ANALOG INTEGRATED CIRCUIT PD5741T6J LOW NOISE AND HIGH GAIN AMPLIFIER FOR IMPEDANCE CONVERTER OF MICROPHONE DESCRIPTION The μPD5741T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret condenser microphone. This device exhibits low noise and high voltage gain characteristics.


    Original     		PDF PD5741T6J PD5741T6J

    HS350

    Abstract: No abstract text available
    Text: DATA SHEET MOS ANALOG INTEGRATED CIRCUIT PD5729T6J LOW NOISE AND HIGH GAIN AMPLIFIER FOR IMPEDANCE CONVERTER OF MICROPHONE DESCRIPTION The μPD5729T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret condenser microphone. This device exhibits low noise and high voltage gain characteristics.


    Original     		PDF PD5729T6J PD5729T6J HS350

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS ANALOG INTEGRATED CIRCUIT PD5747T6J LOW NOISE AND HIGH GAIN AMPLIFIER FOR IMPEDANCE CONVERTER OF MICROPHONE DESCRIPTION The μPD5747T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret condenser microphone. This device exhibits low noise and high voltage gain characteristics.


    Original     		PDF PD5747T6J PD5747T6J M8E0904E

    2SK1189

    Abstract: No abstract text available
    Text: TOSHIBA 2SK118 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 9 <; K 1 1 8 Unit in mm GENERAL PURPOSE AND IMPEDANCE CONVERTER AND CONDENSER MICROPHONE APPLICATIONS 4.2 MAX. • • • High Breakdown Voltage High Input Impedance Low Noise


    OCR Scan     		PDF 2SK118 120Hz) 2SK1189