2SK118
Abstract: 2SK1182 2SK1183
Text: 2SK118 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK118 General Purpose and Impedance Converter and Condenser Microphone Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA max (VGS = −30 V)
|
Original
|
2SK118
2SK118
2SK1182
2SK1183
|
PDF
|
2SK118
Abstract: 2SK1182 2SK118+equivalent
Text: 2SK118 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK118 General Purpose and Impedance Converter and Condenser Microphone Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA max (VGS = −30 V)
|
Original
|
2SK118
2SK118
2SK1182
2SK118+equivalent
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SK208 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK208 General Purpose and Impedance Converter and Condenser Microphone Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)
|
Original
|
2SK208
|
PDF
|
2sk118
Abstract: No abstract text available
Text: 2SK118 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK118 General Purpose and Impedance Converter and Condenser Microphone Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA max (VGS = −30 V)
|
Original
|
2SK118
2sk118
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SK879 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)
|
Original
|
2SK879
|
PDF
|
2SK118
Abstract: No abstract text available
Text: 2SK118 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK118 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA max (VGS = −30 V)
|
Original
|
2SK118
2SK118
|
PDF
|
2SK879
Abstract: No abstract text available
Text: 2SK879 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V · High input impedance: IGSS = −1.0 nA max (VGS = −30 V)
|
Original
|
2SK879
2SK879
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SK879 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)
|
Original
|
2SK879
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SK208 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK208 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)
|
Original
|
2SK208
|
PDF
|
condenser microphone
Abstract: 2SK879
Text: 2SK879 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)
|
Original
|
2SK879
condenser microphone
2SK879
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SK208 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK208 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)
|
Original
|
2SK208
O-236MOD
SC-59
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet PD5758T6J R09DS0017EJ0100 Rev.1.00 Apr 18, 2011 Low Noise and High Gain Amplifier IC for Impedance Converter of Microphone DESCRIPTION The μPD5758T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret
|
Original
|
PD5758T6J
R09DS0017EJ0100
PD5758T6J
|
PDF
|
2SK208
Abstract: 2SK2082
Text: 2SK208 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK208 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V · High input impedance: IGSS = −1.0 nA max (VGS = −30 V)
|
Original
|
2SK208
O-236MOD
2SK208
2SK2082
|
PDF
|
2SK879
Abstract: No abstract text available
Text: 2SK879 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)
|
Original
|
2SK879
2SK879
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet PD5759T6J R09DS0018EJ0100 Rev.1.00 Apr 18, 2011 Low Noise and High Gain Amplifier IC for Impedance Converter of Microphone DESCRIPTION The μPD5759T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret
|
Original
|
PD5759T6J
R09DS0018EJ0100
PD5759T6J
|
PDF
|
2SK118
Abstract: 2SK1182
Text: 2SK118 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK118 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V · High input impedance: IGSS = −1 nA max (VGS = −30 V)
|
Original
|
2SK118
2SK118
2SK1182
|
PDF
|
2SK208
Abstract: 2SK2082
Text: 2SK208 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK208 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)
|
Original
|
2SK208
2SK208
2SK2082
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SK879 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)
|
Original
|
2SK879
SC-70
|
PDF
|
2SK879
Abstract: No abstract text available
Text: 2SK879 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)
|
Original
|
2SK879
2SK879
|
PDF
|
2sk2082
Abstract: condenser microphone 2SK208
Text: 2SK208 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK208 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)
|
Original
|
2SK208
O-236MOD
2sk2082
condenser microphone
2SK208
|
PDF
|
2SK1189
Abstract: No abstract text available
Text: TOSHIBA 2SK118 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 9 <; K 1 1 8 Unit in mm GENERAL PURPOSE AND IMPEDANCE CONVERTER AND CONDENSER MICROPHONE APPLICATIONS 4.2 MAX. • • • High Breakdown Voltage High Input Impedance Low Noise
|
OCR Scan
|
2SK118
120Hz)
2SK1189
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS ANALOG INTEGRATED CIRCUIT PD5741T6J LOW NOISE AND HIGH GAIN AMPLIFIER FOR IMPEDANCE CONVERTER OF MICROPHONE DESCRIPTION The μPD5741T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret condenser microphone. This device exhibits low noise and high voltage gain characteristics.
|
Original
|
PD5741T6J
PD5741T6J
|
PDF
|
HS350
Abstract: No abstract text available
Text: DATA SHEET MOS ANALOG INTEGRATED CIRCUIT PD5729T6J LOW NOISE AND HIGH GAIN AMPLIFIER FOR IMPEDANCE CONVERTER OF MICROPHONE DESCRIPTION The μPD5729T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret condenser microphone. This device exhibits low noise and high voltage gain characteristics.
|
Original
|
PD5729T6J
PD5729T6J
HS350
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS ANALOG INTEGRATED CIRCUIT PD5747T6J LOW NOISE AND HIGH GAIN AMPLIFIER FOR IMPEDANCE CONVERTER OF MICROPHONE DESCRIPTION The μPD5747T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret condenser microphone. This device exhibits low noise and high voltage gain characteristics.
|
Original
|
PD5747T6J
PD5747T6J
M8E0904E
|
PDF
|
