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    HIGH GAIN PNP RF TRANSISTOR Search Results

    HIGH GAIN PNP RF TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    HIGH GAIN PNP RF TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    bfr96 equivalent

    Abstract: MCE544 bfr96 equivalent TRANSISTORS MC1343 transistor equivalent bfr96 2N5031 equivalent TRANSISTOR PNP 5GHz MRF630 MRF544 microsemi MRF237
    Text: MCE545 WAFFLE PACK DIE RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MCE545 is a high breakdown, high gain, discrete PNP silicon bipolar transistor, shipped in waffle pack. ! High Breakdown BVCEO = 70V ! Gold Back Metal


    Original     		PDF MCE545 Symb333 SD1127/MRF237 MS1649/MRF630 MRF837/MRF8372 MRF559 400mA 200mA bfr96 equivalent MCE544 bfr96 equivalent TRANSISTORS MC1343 transistor equivalent bfr96 2N5031 equivalent TRANSISTOR PNP 5GHz MRF630 MRF544 microsemi MRF237

    BF569

    Abstract: BF569R
    Text: BF569/BF569R Vishay Semiconductors Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For selfoscillating RF mixer stages. Features D High gain D Low noise 1 1 13 581 13 581 94 9280 2 9510527 3 3


    Original     		PDF BF569/BF569R BF569 BF569R D-74025 20-Jan-99

    EN4625

    Abstract: transistor 2sA1815 2SA1815 2SC4432
    Text: Ordering number:EN4625 PNP Epitaxial Planar Silicon Transistor 2SA1815 FM, RF, MIX, IF Amplifier, High-Frequency General-Purpose Amplifier Applications Features Package Dimensions • High power gain : PG=25dB f=100MHz . · High cutoff frequency ; fT=750MHz typ.


    Original     		PDF EN4625 2SA1815 100MHz) 750MHz 2SC4432. 2SA1815] EN4625 transistor 2sA1815 2SA1815 2SC4432

    2SA1815

    Abstract: 2SC4432 ITR04747 ITR04748
    Text: Ordering number:ENN4625 PNP Epitaxial Planar Silicon Transistors 2SA1815 FM, RF, MIX, IF Amplifier, High-Frequency General-Purose Amplifier Applications Features Package Dimensions • High power gain : PG=25dB f=100MHz . · High cutoff frequency ; fT=750MHz typ.


    Original     		PDF ENN4625 2SA1815 100MHz) 750MHz 2SC4432. 2018B 2SA1815] 2SA1815 2SC4432 ITR04747 ITR04748

    EN4644

    Abstract: 2SA1857 2SC4400 marking 7T transistor
    Text: Ordering number:EN4644 PNP Epitaxial Planar Silicon Transistor 2SA1857 FM, RF, MIX, IF Amplifier High-Frequency General-Purpose Amplifier Applications Features Package Dimensions • High power gain : PG=25dB typ f=100MHz . · High cutoff frequency : fT=750MHz typ.


    Original     		PDF EN4644 2SA1857 100MHz) 750MHz 2SC4400. 2SA1857] EN4644 2SA1857 2SC4400 marking 7T transistor

    EN4644

    Abstract: 2SA1857 2SC4400 MarKING JS 46441 AX SANYO
    Text: Ordering number:EN4644 PNP Epitaxial Planar Silicon Transistor 2SA1857 FM, RF, MIX, IF Amplifier High-Frequency General-Purpose Amplifier Applications Features Package Dimensions • High power gain : PG=25dB typ f=100MHz . · High cutoff frequency : fT=750MHz typ.


    Original     		PDF EN4644 2SA1857 100MHz) 750MHz 2SC4400. 2SA1857] EN4644 2SA1857 2SC4400 MarKING JS 46441 AX SANYO

    BF979

    Abstract: No abstract text available
    Text: BF979 Vishay Telefunken Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF/VHF uncontrolled prestages with low noise and low modulation. Features D High cross modulation performance D High power gain


    Original     		PDF BF979 BF979 D-74025 20-Jan-99

    BF979

    Abstract: No abstract text available
    Text: BF979 Vishay Semiconductors Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF/VHF uncontrolled prestages with low noise and low modulation. Features D High cross modulation performance D High power gain


    Original     		PDF BF979 BF979 D-74025 20-Jan-99

    Untitled

    Abstract: No abstract text available
    Text: BF979 Vishay Telefunken Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF/VHF uncontrolled prestages with low noise and low modulation. Features D High cross modulation performance D High power gain


    Original     		PDF BF979 BF979 30ake D-74025 20-Jan-99

    Untitled

    Abstract: No abstract text available
    Text: BF569 / BF569R VISHAY Vishay Semiconductors Silicon PNP Planar RF Transistor 1 Features • High gain • Low noise BF569 2 Applications 3 1 For selfoscillating RF mixer stages. BF569R Mechanical Data 3 Typ: BF569 Case: SOT-23 Plastic case Weight: approx. 8.0 mg


    Original     		PDF BF569 BF569R BF569 OT-23 BF569R D-74025 19-Aug-04

    MRF545

    Abstract: No abstract text available
    Text: MRF545 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon PNP, high Frequency, high breakdown, To-39 packaged, Transistor • Maximum Unilateral Gain = 14 dB typ @ f = 200 MHz • High Collector Base Breakdown Voltage - BVCBO = 100 V (min)


    Original     		PDF MRF545 To-39 25Vdc, MRF545

    telefun

    Abstract: transistor Bf 979 BF979
    Text: BF 979 TELEFUNKEN Semiconductors Silicon PNP RF Transistor Applications UHF/VHF uncontrolled prestages with low noise and low modulation Features D High cross modulation performance D High power gain D Low noise D High reverse attenuation 3 2 1 BF979 Marking


    Original     		PDF BF979 D-74025 telefun transistor Bf 979

    Untitled

    Abstract: No abstract text available
    Text: BF979 VISHAY Vishay Semiconductors Silicon PNP Planar RF Transistor Features • • • • High cross modulation performance High power gain Low noise High reverse attenuation 3 2 1 Applications UHF/VHF uncontrolled prestages with low noise and low modulation.


    Original     		PDF BF979 BF970 D-74025 20-Aug-04

    BF569

    Abstract: BF569R
    Text: BF569/BF569R Vishay Telefunken Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For selfoscillating RF mixer stages. Features D High gain D Low noise 1 1 13 581 13 581 94 9280 2 9510527 3 3 BF569 Marking: LH


    Original     		PDF BF569/BF569R BF569 BF569R D-74025 20-Jan-99

    BF569

    Abstract: BF569R
    Text: BF569/BF569R Vishay Telefunken Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For selfoscillating RF mixer stages. Features D High gain D Low noise 1 1 13 581 13 581 94 9280 2 9510527 3 3 BF569 Marking: LH


    Original     		PDF BF569/BF569R BF569 BF569R D-74025 20-Jan-99

    TO50 transistor

    Abstract: No abstract text available
    Text: Not for new design, this product will be obsoleted soon BF979 Vishay Semiconductors Silicon PNP Planar RF Transistor Features • • • • • • 3 High cross modulation performance High power gain e3 Low noise High reverse attenuation Lead Pb -free component


    Original     		PDF BF979 2002/95/EC 2002/96/EC BF970 18-Jul-08 TO50 transistor

    MRF545

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF545 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon PNP, high Frequency, high breakdown Transistor • Maximum Unilateral Gain = 14 dB (typ) @ f = 200 MHz


    Original     		PDF MRF545 MRF545

    Untitled

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF545 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon PNP, high Frequency, high breakdown Transistor • Maximum Unilateral Gain = 14 dB (typ) @ f = 200 MHz


    Original     		PDF MRF545

    transistor BF 509

    Abstract: transistor BF 298 bf509 TRANSISTOR bf 297 EE50 to 92 z Kleine
    Text: BF 509 Silizium-PNP-HF-Transistor Silicon PNP RF Transistor Anwendungen: Regelbare VHF-Eingangsstufen Applications: Gain controlled VHF input stages Besondere Merkmale: • Hohe Leistungsverstärkung Features: • High p o w e r gain • Kleine Rauschzahlen


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: VfSMAY _ BF569/BF569R ▼ Vishay Telefunken Silicon PNP Planar RF Transistor E lectrostatic sensitive device. O bserve precautions fo r handling. ^ M Applications For selfoscillating RF m ixer stages. Features • High gain •


    OCR Scan     		PDF BF569/BF569R BF569 BF569R D-74025 20-Jan-99

    transistor BF 509

    Abstract: l43 transistor c328 transistor BF509 transistor sr 61 transistor 3s4 transistor marking l43 Transistor Marking C3 sot-23 TRANSISTOR MARKING 76 bc238c
    Text: TELEFUNKEN filC D ELECTRONIC • fiTEDD^b D0DS21b 4 « A L G 6 BF 509 YIIUKPtlDMKdKM electronic Creative Technologies Silicon PNP RF Transistor Applications: Gain controlled VHF input stages Features: • High power gain • Low noise figure • High reverse attenuation


    OCR Scan     		PDF 000521b ft-11 569-GS 000s154 hal66 if-11 transistor BF 509 l43 transistor c328 transistor BF509 transistor sr 61 transistor 3s4 transistor marking l43 Transistor Marking C3 sot-23 TRANSISTOR MARKING 76 bc238c

    BF509S

    Abstract: transistor BF 509 BF509 marking code 3h transistor creative 6.1 6 T 3H sot-23 TRANSISTOR MARKING 76 marking U12
    Text: TELEFUNKEN ELECTRONIC filC D WÊ fi^EOO^b 000521^ T • ALG6 7~' 3 t - n BF 509 S ITimiPtMl&GItM electronic Creative Technologies Silicon PNP RF Transistor Applications! Gain controlled VHF Input stages Features: • High power gain • Low noise figure High reverse attenuation


    OCR Scan     		PDF 7-31-tl ft-11 569-GS 000s154 hal66 if-11 BF509S transistor BF 509 BF509 marking code 3h transistor creative 6.1 6 T 3H sot-23 TRANSISTOR MARKING 76 marking U12

    581 transistor motorola

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR4957LT1 PNP Silicon High-Frequency Transistor . . . designed for high-gain, low-noise amplifier oscillator and mixer applications. Specifically packaged for thick and thin-film circuits using surface mount


    OCR Scan     		PDF MMBR4957LT1 MMBR4957LT1 581 transistor motorola

    2sc377

    Abstract: No abstract text available
    Text: S 4 P IV O VERY HIGH-FREQUENCY TRANSISTOR SERIES fcl Use * * * * Wide-band amplifiers UHF, VHF TV tuners CATV converters RF modulators Features * High power gain * Small noise figure * High cutoff frequency ( ):Marking on MCP. CP, PCP. For PNP, (-)sign is omitted.


    OCR Scan     		PDF 250mm 2SC3771 2SC3772 2SC3773 2SC377 2SC3775 2SC4269 2SC4270 2SC4364 2SC4365