HIGH GAIN PNP POWER TRANSISTOR SOT23 Search Results

HIGH GAIN PNP POWER TRANSISTOR SOT23 Result Highlights (5)

Part	Manufacturer	Description
GC321AD7LP103KX18J	Murata Manufacturing Co Ltd	High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive
GC331AD7LQ153KX18J	Murata Manufacturing Co Ltd	High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive
GC331CD7LQ473KX19K	Murata Manufacturing Co Ltd	High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive
GC343DD7LP334KX18K	Murata Manufacturing Co Ltd	High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive
GC355DD7LQ224KX18K	Murata Manufacturing Co Ltd	High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive

HIGH GAIN PNP POWER TRANSISTOR SOT23 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
marking code W1 Abstract: BFT92 BFT92W TRANSISTOR 3358 NH35 Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT92W PNP 4 GHz wideband transistor Product specification May 1994 NXP Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic,	Original	BFT92W OT323 BFT92W BFT92. MBC870 OT323. R77/01/pp14 marking code W1 BFT92 TRANSISTOR 3358 NH35	PDF
Untitled Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DAT BFT92W PNP 4 GHz wideband transistor Product specification May 1994 NXP Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The	Original	BFT92W OT323 BFT92W BFT92. MBC870 OT323. R77/01/pp14	PDF
Untitled Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DAT BFT93W PNP 4 GHz wideband transistor Product specification Supersedes data of November 1992 March 1994 NXP Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic,	Original	BFT93W OT323 BFT93W BFT93. MBC870 R77/01/pp22	PDF
Untitled Abstract: No abstract text available Text: SILICON TRANSISTOR NE97833 PNP SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 5.5 GHz TYP • HIGH SPEED SWITCHING CHARACTERISTICS • NPN COMPLIMENT AVAILABLE: NE02133 • HIGH INSERTION POWER GAIN: \|S21E\|2 = 10 dB at 1 GHz	Original	NE97833 NE02133 NE97833 2SA1978 NE97833-T1B-A 24-Hour	PDF
Untitled Abstract: No abstract text available Text: SILICON TRANSISTOR NE97733 PNP SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8.5 GHz TYP • HIGH SPEED SWITCHING CHARACTERISTICS • NPN COMPLIMENT AVAILABLE: NE68133 • HIGH INSERTION POWER GAIN: \|S21E\|2 = 12 dB at 1 GHz	Original	NE97733 NE68133 NE97733 2SA1977 NE97733-T1B-A 24-Hour	PDF
BV E1 382 1229 Abstract: transistor BF 502 Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT93W PNP 4 GHz wideband transistor Product specification Supersedes data of November 1992 March 1994 NXP Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEATURES DESCRIPTION • High power gain	Original	BFT93W OT323 BFT93. BFT93W MBC870 OT323. R77/01/pp22 BV E1 382 1229 transistor BF 502	PDF
TRANSISTOR D 5702 Abstract: BFT93 BFT93W MLB436 transistor BF 697 Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT93W PNP 4 GHz wideband transistor Product specification Supersedes data of November 1992 March 1994 NXP Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEATURES DESCRIPTION • High power gain	Original	BFT93W OT323 BFT93W BFT93. MBC870 R77/01/pp22 TRANSISTOR D 5702 BFT93 MLB436 transistor BF 697	PDF
marking code W1 Abstract: TRANSISTOR 3358 BFT92 BFT92W Text: Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The BFT92W uses the same crystal as the SOT23 version, BFT92. • Gold metallization ensures	OCR Scan	BFT92W OT323 BFT92W BFT92. MBCB70 OT323. 7110fl2b marking code W1 TRANSISTOR 3358 BFT92	PDF
MARKING CODE 42t Abstract: Transistor 0270 BF marking 42t 269-3 fe 4276 9712 transistor BF 502 TRANSISTOR Bf 522 BFT93 BFT93W FC 0137 Text: Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The BFT93W uses the same crystal as the SOT23 version, BFT93. • Gold metallization ensures	OCR Scan	BFT93W OT323 BFT93W BFT93. MBCB70 OT323. MARKING CODE 42t Transistor 0270 BF marking 42t 269-3 fe 4276 9712 transistor BF 502 TRANSISTOR Bf 522 BFT93 FC 0137	PDF
Philips FA 564 Abstract: No abstract text available Text: Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The BFT93W uses the same crystal as the SOT23 version, BFT93. • Gold metallization ensures	OCR Scan	BFT93W OT323 BFT93W BFT93. MBC870 OT323. 711002b. Philips FA 564	PDF
BFT92 Abstract: "MARKING CODE W1*" GHz PNP transistor marking G SOT323 Transistor SOT323 Marking 87 SOT323 WM BFT92W marking L2 SOT23 6 Text: Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The BFT92W uses the same crystal as the SOT23 version, BFT92. • Gold metallization ensures	OCR Scan	BFT92W OT323 BFT92W BFT92. OT323. 711002b BFT92 "MARKING CODE W1*" GHz PNP transistor marking G SOT323 Transistor SOT323 Marking 87 SOT323 WM marking L2 SOT23 6	PDF
Untitled Abstract: No abstract text available Text: T • bb53131 □ D3333tl 330 HIAPX N APIER PHILIPS/DISCRETE b'lE D Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The	OCR Scan	bb53131 D3333t BFT93W OT323 BFT93W BFT93.	PDF
Untitled Abstract: No abstract text available Text: PNP SILICON HIGH FREQUENCY TRANSISTOR NE97833 FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: It = 5.5 GHz TYP • HIGH SPEED SW ITCHING CHARACTERISTICS • NPN COMPLIMENT AVAILABLE: NE02133 • HIGH INSERTION POWER GAIN: \|S21E\|Z = 10 dB at1 GHz	OCR Scan	NE02133 NE97833 NE97833 2SA1978 NE97833-T1 24-Hour	PDF
transistor marking 44 sot23 Abstract: P41 transistor high gain PNP POWER TRANSISTOR SOT23 Zetex ZXTP2041F ZXTP2041FTA ZXTP2041FTC Text: ZXTP2041F SOT23 40 volt PNP silicon planar medium power transistor Summary V BR CEO > -40V Ic(cont) = -1A Vce(sat) < -500mV @ -1A Complementary type ZXTP2041F Description This transistor combines high gain, high current operation and low saturation voltage making it	Original	ZXTP2041F -500mV ZXTP2041FTA ZXTP2041FTC transistor marking 44 sot23 P41 transistor high gain PNP POWER TRANSISTOR SOT23 Zetex ZXTP2041F ZXTP2041FTA ZXTP2041FTC	PDF

818A Abstract: STT818A Text: STT818A  HIGH GAIN LOW VOLTAGE PNP POWER TRANSISTOR • ■ ■ ■ VERY LOW SATURATION VOLTAGE DC CURRENT GAIN > 100 hFE 3 A CONTINUOUS COLLECTOR CURRENT (IC ) SURFACE-MOUNTING SOT23-6L PACKAGE IN TAPE & REEL APPLICATIONS ■ POWER MANAGEMENT IN PORTABLE	Original	STT818A OT23-6L OT23-6L 818A STT818A	PDF
P41 transistor Abstract: high gain PNP POWER TRANSISTOR SOT23 NY TRANSISTOR MAKING transistor marking 44 sot23 making 2a sot23 ZXTP2041F ZXTP2041FTA ZXTP2041FTC Text: ZXTP2041F SOT23 40 volt PNP silicon planar medium power transistor Summary V BR CEO > -40V Ic(cont) = -1A Vce(sat) < -500mV @ -1A Complementary type ZXTP2041F Description This transistor combines high gain, high current operation and low saturation voltage making it	Original	ZXTP2041F -500mV ZXTP2041FTA ZXTP2041FTC P41 transistor high gain PNP POWER TRANSISTOR SOT23 NY TRANSISTOR MAKING transistor marking 44 sot23 making 2a sot23 ZXTP2041F ZXTP2041FTA ZXTP2041FTC	PDF
TS16949 Abstract: ZXTN2040F ZXTP2041F ZXTP2041FTA ZXTP2041FTC Text: ZXTP2041F SOT23 40 volt PNP silicon planar medium power transistor Summary V BR CEO > -40V Ic(cont) = -1A Vce(sat) < -500mV @ -1A Complementary type ZXTN2040F Description This transistor combines high gain, high current operation and low saturation voltage making it	Original	ZXTP2041F -500mV ZXTN2040F ZXTP2041FTA ZXTP2041FTC D-81541 TX75248, TS16949 ZXTN2040F ZXTP2041F ZXTP2041FTA ZXTP2041FTC	PDF
ON TSOP6 MARKING 6L Abstract: 818A STT818A High voltage fast switching power transistor pnp Text: STT818A HIGH GAIN LOW VOLTAGE PNP POWER TRANSISTOR • ■ ■ ■ VERY LOW SATURATION VOLTAGE DC CURRENT GAIN > 100 hFE 3 A CONTINUOUS COLLECTOR CURRENT (IC) SURFACE-MOUNTING SOT23-6L PACKAGE IN TAPE & REEL APPLICATIONS POWER MANAGEMENT IN PORTABLE EQUIPMENTS	Original	STT818A OT23-6L OT23-6L ON TSOP6 MARKING 6L 818A STT818A High voltage fast switching power transistor pnp	PDF
221-166 Abstract: 2SA1978 NE02133 NE97833 NE97833-T1 S21E k 2445 transistor Text: PNP SILICON HIGH FREQUENCY TRANSISTOR NE97833 FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 5.5 GHz TYP • HIGH SPEED SWITCHING CHARACTERISTICS • NPN COMPLIMENT AVAILABLE: NE02133 • HIGH INSERTION POWER GAIN: \|S21E\|2 = 10 dB at 1 GHz 33 SOT 23 STYLE	Original	NE97833 NE02133 NE97833 2SA1978 NE97833-T1 24-Hour 221-166 2SA1978 NE02133 NE97833-T1 S21E k 2445 transistor	PDF
221-166 Abstract: 2SA1978 transistor marking T93 NE02133 NE97833 S21E ne02133 MARKING Text: PNP SILICON HIGH FREQUENCY TRANSISTOR NE97833 FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 5.5 GHz TYP • HIGH SPEED SWITCHING CHARACTERISTICS • NPN COMPLIMENT AVAILABLE: NE02133 • HIGH INSERTION POWER GAIN: \|S21E\|2 = 10 dB at 1 GHz 33 SOT 23 STYLE	Original	NE97833 NE02133 NE97833 2SA1978 24-Hour 221-166 2SA1978 transistor marking T93 NE02133 S21E ne02133 MARKING	PDF
Untitled Abstract: No abstract text available Text: PNP SILICON HIGH FREQUENCY TRANSISTOR NE97833 FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: f r = 5.5 G H z TYP • HIGH SPEED SWITCHING CHARACTERISTICS • NPN COMPLIMENT AVAILABLE: N E 02133 • HIGH INSERTION POWER GAIN: \|S21e \|2 = 10 dB at 1 GHz	OCR Scan	NE97833 NE97833 2SA1978 NE97833-T1	PDF
ic 741 free Abstract: 2SA1977 NE68133 NE97733 NE97733-T1 S21E iC 828 Transistor Text: PNP SILICON HIGH FREQUENCY TRANSISTOR NE97733 FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8.5 GHz TYP • HIGH SPEED SWITCHING CHARACTERISTICS • NPN COMPLIMENT AVAILABLE: NE68133 • HIGH INSERTION POWER GAIN: \|S21E\|2 = 12 dB at 1 GHz 33 SOT 23 STYLE	Original	NE97733 NE68133 NE97733 2SA1977 NE97733-T1 24-Hour ic 741 free 2SA1977 NE68133 NE97733-T1 S21E iC 828 Transistor	PDF
ic 741 free Abstract: T92 marking 2SA1977 NE68133 NE97733 S21E 682 MARKING SOT-23 sot-23 24 Text: PNP SILICON HIGH FREQUENCY TRANSISTOR NE97733 FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8.5 GHz TYP • HIGH SPEED SWITCHING CHARACTERISTICS • NPN COMPLIMENT AVAILABLE: NE68133 • HIGH INSERTION POWER GAIN: \|S21E\|2 = 12 dB at 1 GHz 33 SOT 23 STYLE	Original	NE97733 NE68133 NE97733 2SA1977 24-Hour ic 741 free T92 marking 2SA1977 NE68133 S21E 682 MARKING SOT-23 sot-23 24	PDF
2SA1977 Abstract: NE68133 NE97733 S21E Text: PNP SILICON HIGH FREQUENCY TRANSISTOR NE97733 FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8.5 GHz TYP • HIGH SPEED SWITCHING CHARACTERISTICS • NPN COMPLIMENT AVAILABLE: NE68133 • HIGH INSERTION POWER GAIN: \|S21E\|2 = 12 dB at 1 GHz 33 SOT 23 STYLE	Original	NE97733 NE68133 NE97733 2SA1977 2SA1977 NE68133 S21E	PDF

HIGH GAIN PNP POWER TRANSISTOR SOT23 Search Results

HIGH GAIN PNP POWER TRANSISTOR SOT23 Result Highlights (5)

HIGH GAIN PNP POWER TRANSISTOR SOT23 Datasheets Context Search

marking code W1

Untitled

Untitled

Untitled

Untitled

BV E1 382 1229

TRANSISTOR D 5702

marking code W1

MARKING CODE 42t

Philips FA 564

BFT92

Untitled

Untitled

transistor marking 44 sot23

818A

P41 transistor

TS16949

ON TSOP6 MARKING 6L

221-166

221-166

Untitled

ic 741 free

ic 741 free

2SA1977