Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    HIGH GAIN LOW VOLTAGE NPN TRANSISTOR Search Results

    HIGH GAIN LOW VOLTAGE NPN TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    HIGH GAIN LOW VOLTAGE NPN TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC5011

    Abstract: 2SC5011-T1
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5011 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD FEATURES • High Gain Bandwidth Product fT = 6.5 GHz TYP. • Low Noise, High Gain • Low Voltage Operation


    Original     		PDF 2SC5011 2SC5011-T1 2SC5011 2SC5011-T1

    2SC5013

    Abstract: 2SC5013-T1 transistor r47 MARKINGR46 marking R46
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5013 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD FEATURES • High Gain Bandwidth Product fT = 10 GHz TYP. • Low Noise, High Gain • Low Voltage Operation


    Original     		PDF 2SC5013 2SC5013-T1 2SC5013 2SC5013-T1 transistor r47 MARKINGR46 marking R46

    NTE316

    Abstract: No abstract text available
    Text: NTE316 Silicon NPN Transistor High Gain, Low Noise Amp Features: D High Current Gain–Bandwidth Product D Low Noise Figure D High Power Gain Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V


    Original     		PDF NTE316 100MHz 450MHz NTE316

    2SC5012-T1

    Abstract: transistor marking R37 ghz 2SC5012
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5012 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD FEATURES • High Gain Bandwidth Product fT = 9 GHz TYP. • Low Noise, High Gain • Low Voltage Operation • 4-pin super minimold Package


    Original     		PDF 2SC5012 2SC5012-T1 2SC5012-T1 transistor marking R37 ghz 2SC5012

    NESG210719

    Abstract: No abstract text available
    Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG210719 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD 19, 1608 PKG FEATURES • The device is an ideal choice for OSC, low noise, high-gain amplification • High breakdown voltage technology for SiGe Tr.


    Original     		PDF NESG210719 NESG210719 NESG210719-A NESG210719-T1 NESG210719-T1-A PU10419EJ03V0DS

    Untitled

    Abstract: No abstract text available
    Text: TXPI 1028 4N22 Solid State Opto-Electronic Low Gain Silicon NPN Coupler DESCRIPTION FEATURES This is a Silicon NPN Opto-Electronic coupler designed for applications requiring low CTR gain at low operating currents and high voltage isolation. ” Low CTR Gain, typically 25 % CTR


    Original     		PDF -65oC 125oC -55oC 100oC 260oC,

    Untitled

    Abstract: No abstract text available
    Text: TXPI 1042 4N22A Solid State Opto-Electronic Low Gain Silicon NPN Coupler DESCRIPTION FEATURES This is a Silicon NPN Opto-Electronic coupler designed for applications requiring low CTR gain at low operating currents and high voltage isolation. ” Low CTR Gain, typically 25 % CTR


    Original     		PDF 4N22A -65oC 125oC -55oC 100oC 260oC,

    Untitled

    Abstract: No abstract text available
    Text: TXPI 1044 4N24A Solid State Opto-Electronic High Gain Silicon NPN Coupler DESCRIPTION FEATURES This is a Silicon NPN Opto-Electronic coupler designed for applications requiring high CTR gain at low operating currents and high voltage isolation. ” High CTR Gain, typically 100 % CTR


    Original     		PDF 4N24A -65oC 125oC -55oC 100oC 260oC,

    NEC semiconductor

    Abstract: NEC JAPAN marking NEC rf transistor nec npn rf NESG210719 NESG210719-T1 transistor RF S-parameters NEC D7
    Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG210719 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD 19, 1608 PKG FEATURES • The device is an ideal choice for OSC, low noise, high-gain amplification • High breakdown voltage technology for SiGe Tr.


    Original     		PDF NESG210719 NESG210719-T1-A NESG210719-T1 NESG210719-A NEC semiconductor NEC JAPAN marking NEC rf transistor nec npn rf NESG210719 NESG210719-T1 transistor RF S-parameters NEC D7

    NESG210719

    Abstract: NESG210719-T1
    Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG210719 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD 19, 1608 PKG FEATURES • The device is an ideal choice for OSC, low noise, high-gain amplification • High breakdown voltage technology for SiGe Tr.


    Original     		PDF NESG210719 NESG210719-A NESG210719-T1-A NESG210719-T1 NESG210719 NESG210719-T1

    Untitled

    Abstract: No abstract text available
    Text: TXPI 1030 4N24 Solid State Opto-Electronic High Gain Silicon NPN Coupler DESCRIPTION FEATURES This is a Silicon NPN Opto-Electronic coupler designed for applications requiring high CTR gain at low operating currents and high voltage isolation. ” High CTR Gain, typically 100 % CTR


    Original     		PDF -65oC 125oC -55oC 100oC 260oC,

    npn 60V 600mw

    Abstract: NTE2672 voltage 15v,collector current 40mA VEBO-15V
    Text: NTE2672 Silicon NPN Transistor High Gain, Low Frequency, General Purpose Amp TO92 Type Package Features: D High DC Current Gain: hFE = 800 to 3200 D Low Collector−Emitter Saturation Voltage: VCE sat = 0.5V Max D High Collector−Base Voltage: VEBO ≥ 15V


    Original     		PDF NTE2672 100mA, npn 60V 600mw NTE2672 voltage 15v,collector current 40mA VEBO-15V

    NTE2672

    Abstract: VEBO-15V
    Text: NTE2672 Silicon NPN Transistor High Gain, Low Frequency, General Purpose Amp Features: D High DC Current Gain: hFE = 800 to 3200 D Low Collector-Emitter Saturation Voltage: VCE sat = 0.5V Max D High Collector-Base Voltage: VEBO ≥ 15V Applications: D Low Frequency, General Purpose Amp


    Original     		PDF NTE2672 100mA, NTE2672 VEBO-15V

    NTE47

    Abstract: No abstract text available
    Text: NTE47 Silicon NPN Transistor High Gain, Low Noise Amp Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V


    Original     		PDF NTE47 200mA 100Hz 100MHz NTE47

    ssm2212

    Abstract: QB1E NPN Monolithic Transistor Pair R840 SSM221 "logarithmic amplifier" ssm2212rz AD8512 MS-012-AA Analog Devices Logarithmic Amplifiers
    Text: Audio, Dual-Matched NPN Transistor SSM2212 Very low voltage noise: 1 nV/√Hz maximum @ 100 Hz Excellent current gain match: 0.5% Low offset voltage VOS : 200 V maximum Outstanding offset voltage drift: 0.03 μV/°C High gain bandwidth product: 200 MHz


    Original     		PDF SSM2212 SSM2212 SSM2212RZ SSM2212RZ-R7 SSM2212RZ-RL D09043-0-7/10 QB1E NPN Monolithic Transistor Pair R840 SSM221 "logarithmic amplifier" ssm2212rz AD8512 MS-012-AA Analog Devices Logarithmic Amplifiers

    Untitled

    Abstract: No abstract text available
    Text: 2STR1215 LOW VOLTAGE FAST-SWITCHING HIGH GAIN NPN POWER TRANSISTOR Features • VERY LOW COLLECTOR-EMITTER SATURATION VOLTAGE ■ HIGH CURRENT GAIN CHARACTERISTIC ■ FAST-SWITCHING SPEED ■ IN COMPLIANCE WITH THE 2002/93/EC EUROPEAN DIRECTIVE ■ MINIATURE SOT-23 PLASTIC PACKAGE


    Original     		PDF 2STR1215 2002/93/EC OT-23 OT-23 2STR1215 2STR2215

    Untitled

    Abstract: No abstract text available
    Text: TXPI 1033 4N49 Solid State Opto-Electronic High Gain Silicon NPN Coupler DESCRIPTION FEATURES This is a Silicon NPN Opto-Electronic coupler designed for applications requiring high CTR gain at low operating currents and high voltage isolation. ” ” ” ”


    Original     		PDF -65oC 125oC -55oC 100oC 260oC,

    Untitled

    Abstract: No abstract text available
    Text: Audio, Dual-Matched NPN Transistor MAT12 Very low voltage noise: 1 nV/√Hz maximum @ 100 Hz Excellent current gain match: 0.5% typical Low offset voltage VOS : 200 µV maximum Outstanding offset voltage drift: 0.03 µV/°C typical High gain bandwidth product: 200 MHz


    Original     		PDF MAT12 MAT12 22306-A MAT12AHZ D09044-0-7/10

    12350

    Abstract: 2STD1665 2STD1665T4 D1665 st 833
    Text: 2STD1665 Low voltage fast-switching NPN power transistor Features • Very low collector to emitter saturation voltage ■ High current gain characteristic ■ Fast-switching speed TAB 3 Applications 1 ■ Voltage regulators ■ High efficiency low voltage switching


    Original     		PDF 2STD1665 2STD1665T4 D1665 12350 2STD1665 2STD1665T4 D1665 st 833

    Untitled

    Abstract: No abstract text available
    Text: ST13007 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . . . . . . IMPROVED SPECIFICATION: - LOWER LEAKAGE CURRENT - TIGHTER GAIN RANGE - DC CURRENT GAIN PRESELECTION - TIGHTER STORAGE TIME RANGE HIGH VOLTAGE CAPABILITY NPN TRANSISTOR LOW SPREAD OF DYNAMIC PARAMETERS


    OCR Scan     		PDF ST13007

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 -FEBRUARY 95_ ZTX1051A _ _ _ FEATURES * Bcev=150V * Very Low Saturation Voltage * High Gain * Inherently Low Noise APPLICATIONS * Em ergency Lighting * Low Noise Audio


    OCR Scan     		PDF ZTX1051A R100MHz lB-40mA, 100mA 0D11D3D

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product • Low Noise, High Gain • Low Voltage Operation


    OCR Scan     		PDF 2SC5011

    NEC 2532 n 749

    Abstract: NEC 2532 PT1060 transistor NEC D 822 P transistor NEC D 587 NEC 2134 transistor transistor c 6091 transistor sp 772 SP 2822
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Small Package • High Gain Bandwidth Product fr = 12 GHz TYP. • Low Noise, High Gain • Low Voltage Operation


    OCR Scan     		PDF 2SC5014 2SC5014-T1 2SC5014-T2 2SC5014) NEC 2532 n 749 NEC 2532 PT1060 transistor NEC D 822 P transistor NEC D 587 NEC 2134 transistor transistor c 6091 transistor sp 772 SP 2822

    BUW48

    Abstract: Asg TRANSISTOR
    Text: T SCS-THOMSON BUW48 ^ 7 # Meiamiigra@BtiiB8_ BUW49 HIGH POWER NPN SILICON TRANSISTORS . . . . . SGS-THOMSON PREFERRED SALESTYPES NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED VER Y LOW SATURATION VOLTAGE AND HIGH GAIN APPLICATION


    OCR Scan     		PDF BUW48 BUW49 BUW48 BUW49 O-218 Asg TRANSISTOR